JP4649717B2 - 露光方法及び露光装置、デバイス製造方法 - Google Patents

露光方法及び露光装置、デバイス製造方法 Download PDF

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Publication number
JP4649717B2
JP4649717B2 JP2000269288A JP2000269288A JP4649717B2 JP 4649717 B2 JP4649717 B2 JP 4649717B2 JP 2000269288 A JP2000269288 A JP 2000269288A JP 2000269288 A JP2000269288 A JP 2000269288A JP 4649717 B2 JP4649717 B2 JP 4649717B2
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Japan
Prior art keywords
optical system
exposure
pattern
illumination optical
projection
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JP2000269288A
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English (en)
Japanese (ja)
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JP2001166497A5 (enExample
JP2001166497A (ja
Inventor
誠 土屋
圭 奈良
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Nikon Corp
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Nikon Corp
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Priority to JP2000269288A priority Critical patent/JP4649717B2/ja
Priority to KR1020000057268A priority patent/KR100846337B1/ko
Publication of JP2001166497A publication Critical patent/JP2001166497A/ja
Publication of JP2001166497A5 publication Critical patent/JP2001166497A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
JP2000269288A 1999-10-01 2000-09-05 露光方法及び露光装置、デバイス製造方法 Expired - Lifetime JP4649717B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000269288A JP4649717B2 (ja) 1999-10-01 2000-09-05 露光方法及び露光装置、デバイス製造方法
KR1020000057268A KR100846337B1 (ko) 1999-10-01 2000-09-29 노광방법 및 노광장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-282114 1999-10-01
JP28211499 1999-10-01
JP2000269288A JP4649717B2 (ja) 1999-10-01 2000-09-05 露光方法及び露光装置、デバイス製造方法

Publications (3)

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JP2001166497A JP2001166497A (ja) 2001-06-22
JP2001166497A5 JP2001166497A5 (enExample) 2007-10-25
JP4649717B2 true JP4649717B2 (ja) 2011-03-16

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JP2000269288A Expired - Lifetime JP4649717B2 (ja) 1999-10-01 2000-09-05 露光方法及び露光装置、デバイス製造方法

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JP (1) JP4649717B2 (enExample)
KR (1) KR100846337B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4362999B2 (ja) * 2001-11-12 2009-11-11 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2003295459A (ja) * 2002-04-02 2003-10-15 Nikon Corp 露光装置及び露光方法
JP2004335953A (ja) * 2002-11-25 2004-11-25 Nikon Corp 露光装置及び露光方法
JP4496711B2 (ja) * 2003-03-31 2010-07-07 株式会社ニコン 露光装置及び露光方法
US20050088664A1 (en) * 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
JP4806581B2 (ja) * 2005-03-28 2011-11-02 富士フイルム株式会社 光量調整方法、画像記録方法及び装置
JP5071382B2 (ja) * 2006-03-20 2012-11-14 株式会社ニコン 走査露光装置及びマイクロデバイスの製造方法
US8013977B2 (en) * 2006-07-17 2011-09-06 Asml Netherlands B.V. Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
JP5354803B2 (ja) * 2010-06-28 2013-11-27 株式会社ブイ・テクノロジー 露光装置
US9488811B2 (en) * 2013-08-20 2016-11-08 Ultratech, Inc. Wynne-Dyson optical system with variable magnification
JP6661371B2 (ja) 2015-12-25 2020-03-11 キヤノン株式会社 評価方法、露光方法、および物品の製造方法
CN110431487B (zh) * 2017-03-17 2021-08-10 株式会社尼康 照明装置及方法、曝光装置及方法、以及元件制造方法
JP2023096983A (ja) * 2021-12-27 2023-07-07 キヤノン株式会社 露光装置、露光方法、および、物品製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654751B2 (ja) * 1987-10-27 1994-07-20 キヤノン株式会社 焦点検出方法
JP2580668B2 (ja) * 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
JP3230094B2 (ja) * 1991-09-02 2001-11-19 株式会社ニコン 投影光学系の光学特性測定方法、光学特性測定装置、露光方法及びマスク
JP3287017B2 (ja) * 1992-07-10 2002-05-27 株式会社ニコン 結像特性の測定方法
JP3152776B2 (ja) * 1992-12-25 2001-04-03 宮崎沖電気株式会社 ホトリソグラフィーの露光量算出方法
JP3376688B2 (ja) * 1993-10-06 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
JP3477838B2 (ja) * 1993-11-11 2003-12-10 株式会社ニコン 走査型露光装置及び露光方法
JP3339149B2 (ja) * 1993-12-08 2002-10-28 株式会社ニコン 走査型露光装置ならびに露光方法
JP3460129B2 (ja) * 1994-08-16 2003-10-27 株式会社ニコン 露光装置および露光方法
JP3550597B2 (ja) * 1995-06-02 2004-08-04 株式会社ニコン 露光装置
JP3791037B2 (ja) * 1996-02-28 2006-06-28 株式会社ニコン 露光装置

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Publication number Publication date
JP2001166497A (ja) 2001-06-22
KR100846337B1 (ko) 2008-07-15
KR20010039943A (ko) 2001-05-15

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