KR100846337B1 - 노광방법 및 노광장치 - Google Patents

노광방법 및 노광장치 Download PDF

Info

Publication number
KR100846337B1
KR100846337B1 KR1020000057268A KR20000057268A KR100846337B1 KR 100846337 B1 KR100846337 B1 KR 100846337B1 KR 1020000057268 A KR1020000057268 A KR 1020000057268A KR 20000057268 A KR20000057268 A KR 20000057268A KR 100846337 B1 KR100846337 B1 KR 100846337B1
Authority
KR
South Korea
Prior art keywords
optical system
substrate
projection
exposure
exposure light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020000057268A
Other languages
English (en)
Korean (ko)
Other versions
KR20010039943A (ko
Inventor
쓰찌야마꼬또
나라게이
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20010039943A publication Critical patent/KR20010039943A/ko
Application granted granted Critical
Publication of KR100846337B1 publication Critical patent/KR100846337B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
KR1020000057268A 1999-10-01 2000-09-29 노광방법 및 노광장치 Expired - Lifetime KR100846337B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP99-282114 1999-10-01
JP28211499 1999-10-01
JP2000-269288 2000-09-05
JP2000269288A JP4649717B2 (ja) 1999-10-01 2000-09-05 露光方法及び露光装置、デバイス製造方法

Publications (2)

Publication Number Publication Date
KR20010039943A KR20010039943A (ko) 2001-05-15
KR100846337B1 true KR100846337B1 (ko) 2008-07-15

Family

ID=26554475

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000057268A Expired - Lifetime KR100846337B1 (ko) 1999-10-01 2000-09-29 노광방법 및 노광장치

Country Status (2)

Country Link
JP (1) JP4649717B2 (enExample)
KR (1) KR100846337B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4362999B2 (ja) * 2001-11-12 2009-11-11 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2003295459A (ja) * 2002-04-02 2003-10-15 Nikon Corp 露光装置及び露光方法
JP2004335953A (ja) * 2002-11-25 2004-11-25 Nikon Corp 露光装置及び露光方法
JP4496711B2 (ja) * 2003-03-31 2010-07-07 株式会社ニコン 露光装置及び露光方法
US20050088664A1 (en) * 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
JP4806581B2 (ja) * 2005-03-28 2011-11-02 富士フイルム株式会社 光量調整方法、画像記録方法及び装置
JP5071382B2 (ja) * 2006-03-20 2012-11-14 株式会社ニコン 走査露光装置及びマイクロデバイスの製造方法
US8013977B2 (en) * 2006-07-17 2011-09-06 Asml Netherlands B.V. Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
JP5354803B2 (ja) * 2010-06-28 2013-11-27 株式会社ブイ・テクノロジー 露光装置
US9488811B2 (en) * 2013-08-20 2016-11-08 Ultratech, Inc. Wynne-Dyson optical system with variable magnification
JP6661371B2 (ja) 2015-12-25 2020-03-11 キヤノン株式会社 評価方法、露光方法、および物品の製造方法
CN110431487B (zh) * 2017-03-17 2021-08-10 株式会社尼康 照明装置及方法、曝光装置及方法、以及元件制造方法
JP2023096983A (ja) * 2021-12-27 2023-07-07 キヤノン株式会社 露光装置、露光方法、および、物品製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416327B1 (ko) * 1993-11-11 2004-04-17 가부시키가이샤 니콘 주사형노광장치및노광방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654751B2 (ja) * 1987-10-27 1994-07-20 キヤノン株式会社 焦点検出方法
JP2580668B2 (ja) * 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
JP3230094B2 (ja) * 1991-09-02 2001-11-19 株式会社ニコン 投影光学系の光学特性測定方法、光学特性測定装置、露光方法及びマスク
JP3287017B2 (ja) * 1992-07-10 2002-05-27 株式会社ニコン 結像特性の測定方法
JP3152776B2 (ja) * 1992-12-25 2001-04-03 宮崎沖電気株式会社 ホトリソグラフィーの露光量算出方法
JP3376688B2 (ja) * 1993-10-06 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
JP3339149B2 (ja) * 1993-12-08 2002-10-28 株式会社ニコン 走査型露光装置ならびに露光方法
JP3460129B2 (ja) * 1994-08-16 2003-10-27 株式会社ニコン 露光装置および露光方法
JP3550597B2 (ja) * 1995-06-02 2004-08-04 株式会社ニコン 露光装置
JP3791037B2 (ja) * 1996-02-28 2006-06-28 株式会社ニコン 露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416327B1 (ko) * 1993-11-11 2004-04-17 가부시키가이샤 니콘 주사형노광장치및노광방법

Also Published As

Publication number Publication date
JP2001166497A (ja) 2001-06-22
JP4649717B2 (ja) 2011-03-16
KR20010039943A (ko) 2001-05-15

Similar Documents

Publication Publication Date Title
US10571340B2 (en) Method and device for measuring wavefront using diffraction grating, and exposure method and device
US11255514B2 (en) Illumination apparatus having planar array of LEDs and movable pair of lens arrays for modifying light output
KR100938191B1 (ko) 노광 장치 및 노광 방법, 및 디바이스 제조 방법
JP3610175B2 (ja) 投影露光装置及びそれを用いた半導体デバイスの製造方法
KR100485314B1 (ko) 투영노광장치와 이것을 사용한 디바이스제조방법
KR100846337B1 (ko) 노광방법 및 노광장치
JP2020086393A (ja) 光源装置、照明装置、露光装置及び物品の製造方法
US8343693B2 (en) Focus test mask, focus measurement method, exposure method and exposure apparatus
KR101267144B1 (ko) 센서의 교정 방법, 노광 방법, 노광 장치, 디바이스 제조방법, 및 반사형 마스크
JP3200244B2 (ja) 走査型露光装置
KR101501303B1 (ko) 조명 광학 장치, 노광 장치, 및 디바이스 제조 방법
JP2004055856A (ja) 照明装置、それを用いた露光装置及びデバイス製造方法
JP2005085991A (ja) 露光装置及び該装置を用いたデバイス製造方法
JP2000114164A (ja) 走査型投影露光装置及びそれを用いたデバイスの製造方法
US11698589B2 (en) Light source device, illuminating apparatus, exposing apparatus, and method for manufacturing article
JP2009041956A (ja) 瞳透過率分布計測装置及び方法、投影露光装置、並びにデバイス製造方法
KR20010098613A (ko) 노광장치 및 노광방법
JP6428839B2 (ja) 露光方法、露光装置及びデバイス製造方法
JP7340167B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP7548441B2 (ja) 露光装置、制御方法、及びデバイス製造方法
US20240345486A1 (en) Exposure device
JP6729663B2 (ja) 露光方法及び露光装置
JP2008124308A (ja) 露光方法及び露光装置、それを用いたデバイス製造方法
KR20180028969A (ko) 조명 광학계, 노광 장치 및 물품 제조 방법
JPH0794403A (ja) 照明装置及びそれを用いた投影露光装置

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20000929

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20050929

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20000929

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20061108

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20080527

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20080709

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20080709

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20110617

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20120621

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20130621

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20130621

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20140626

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20140626

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20150618

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20150618

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20160617

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20160617

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20170616

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20170616

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20180618

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20180618

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20190618

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20190618

Start annual number: 12

End annual number: 12

PC1801 Expiration of term

Termination date: 20210329

Termination category: Expiration of duration