KR100846337B1 - Exposure method and exposure apparatus - Google Patents

Abstract

(Problem) An object of the present invention is to provide an exposure method and an exposure apparatus in which a pattern of a pattern formed on a substrate can be uniformized in each projection area in transferring a pattern image formed on a mask through a plurality of projection optical systems. do.

(Solution means) The exposure apparatus 1 includes a plurality of projection optical systems 5 disposed corresponding to the plurality of illumination optical systems 4, a dimension measuring instrument 30 for measuring the dimensions of patterns formed on the substrate W; At least one of the irradiation amount of the exposure light of the illumination optical system 4, the optical characteristic of the illumination optical system 4, and the optical characteristic of the projection optical system 5, based on the measurement result of the dimensional measurement system 30, Since each of the optical systems 4 and 5 to be determined is provided with a control system 7 which is individually changed, the size of the pattern for each projection area is not affected by the difference in the characteristics of the respective optical systems 4 and 5. Make it uniform.

Description

Exposure method and exposure device {EXPOSURE METHOD AND EXPOSURE APPARATUS}

1 is a configuration diagram showing an embodiment of the exposure apparatus of the present invention.

2 is a perspective view showing one embodiment of the exposure apparatus of the present invention.

3 is a plan view for explaining the filter.

4 is a schematic configuration diagram for explaining a projection optical system.

5 is a diagram for explaining a projection area on a substrate.

6 is a view for explaining a focus position adjusting device in a second embodiment of the exposure apparatus of the present invention.

7 is a diagram for explaining another embodiment of the focus position adjusting device.

It is a figure for demonstrating the numerical aperture adjusting apparatus in the 3rd Embodiment of the exposure apparatus of this invention.

9 is a flowchart illustrating an example of a process for manufacturing a semiconductor device.

Explanation of symbols on the main parts of the drawings

One … Exposure device

4 (4a-4g)... Illumination optical system

5 (5a to 5g)... Projection optical system

7. Control unit                 

11. Light source

13. Wavelength filter (wavelength control device)

22. Ambient light sensor (irradiation meter)

30. Line width measuring instrument (dimension measuring instrument)

58, 61. Right Angle Prism (Focus Positioning Device)

58a, 61a... Prism Shifter (Focus Positioning Device)

LC... Lens Controller (Focus Positioning Device)

70... Adjustable Aperture (Optical Member)

80... Variable Aperture (Opening Number Adjuster)

Pa to Pg... Projection area

M… Mask

W… Board

The present invention relates to an exposure method and an exposure apparatus for illuminating exposure light to a mask from a plurality of illumination optical systems and transferring a pattern image of the mask onto a substrate through a plurality of projection optical systems arranged corresponding to the respective illumination optical systems. will be.

In recent years, liquid crystal display substrates have been widely used as display elements in personal computers and television receivers. The liquid crystal display substrate is made by patterning a transparent thin film electrode on a glass substrate in a desired shape by a photolithography method. As the apparatus for this lithography, a projection exposure apparatus for exposing an original pattern formed on a mask to a photoresist layer on a glass substrate through a projection optical system is used.

By the way, in recent years, the large area of a liquid crystal display board | substrate is calculated | required, and along with this, the expansion of an exposure area | region (short area | region) is desired also in a projection exposure apparatus. As an enlargement means of this shot area | region, the scanning type exposure apparatus which has a some projection optical system is mentioned. The scanning exposure apparatus includes an illumination optical system including a fly's eye lens for equalizing the amount of light emitted from a light source, and a light flux in which the amount of light uniformed by the illumination optical system is shaped into a desired shape. It is equipped with a plurality of visual apertures to illuminate the area.

In the mask, different regions (lighting regions) are respectively illuminated by the light beams emitted from each of the plurality of illumination optical systems arranged. The light beams passing through the mask form a pattern image of the mask in different projection areas on the glass substrate through projection optical systems provided corresponding to respective illumination optical systems, respectively. Then, by scanning the projection optical system while synchronizing the mask with the glass substrate, the entire surface of the pattern area on the mask is transferred onto the glass substrate.

In the scanning exposure apparatus having the above-described configuration, the pattern image formed on the mask is divided by a plurality of projection optical systems and projected onto a glass substrate. In this case, the divided pattern image is projected onto the glass substrate without overlap or by a predetermined amount.                         

In the exposure apparatus provided with such a plurality of projection optical systems, the line width of the pattern formed in each projection region on the substrate (each region on the substrate irradiated by the exposure light from each projection optical system) is preferably uniformized. However, if there is a difference in the characteristics (imaging characteristics, etc.) of each projection optical system, there is a problem that the line width of the pattern formed on the substrate differs for each projection region even when the respective doses of the plurality of illumination optical systems are uniform.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and in illuminating exposure light to a mask from a plurality of illumination optical systems, and transferring a pattern image formed on the mask onto a substrate through a plurality of projection optical systems disposed corresponding to each illumination optical system. An object of the present invention is to provide an exposure method and an exposure apparatus in which the line width of a pattern formed on a substrate can be uniformized in each projection area.

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, this invention employ | adopts the following structures corresponding to FIGS. 1-9 shown by embodiment.

The exposure method of Claim 1 illuminates exposure light to the mask M from several illumination optical systems 4a-4g, The some projection optical system 5a-4 is arrange | positioned corresponding to each of the illumination optical systems 4a-4g. In the exposure method which transfers the pattern image formed in the mask M on the board | substrate W through 5g), the projection area | region (Pa-Pg) corresponding to each of the projection optical systems 5a-5g on the board | substrate W beforehand. The exposure amount of the exposure light is set to a predetermined amount to perform an exposure process, and the respective dimensions of the pattern image for each of the projection areas Pa to Pg formed on the substrate W by this exposure process are measured. Based on the result, at least one of the irradiation amount of the exposure light of the illumination optical system 4a-4g, the optical characteristic of the illumination optical system 4a-4g, and the optical characteristic of the projection optical system 5a-5g is projected so that each dimension may become a target value. Optical to determine each of the regions Pa to Pg Each (4a ~ 4g, 5a ~ 5g) is characterized in that to change individually.

According to the present invention, the irradiation amount of the exposure light of the illumination optical system 4a to 4g and the illumination optical system 4a to 4g based on the respective measurement results of the dimensions of the pattern formed in each projection area Pa to Pg on the substrate W. Each optical system by changing at least one of the optical characteristics of the optical system and the optical characteristics of the projection optical systems 5a to 5g individually for each of the optical systems 4a to 4g and 5a to 5g for determining each of the projection regions Pa to Pg. Even when there are differences in the properties of 4a to 4g and 5a to 5g, the dimensions of the patterns formed in the plurality of projection areas Pa to Pg on the substrate W can be reliably matched without being influenced by them. .

At this time, by exposing the exposure amount of the exposure light of the projection areas Pa to Pg corresponding to each of the projection optical systems 5a to 5g on the substrate W in advance to a predetermined amount, for example, by performing exposure processing, The dimensions of the pattern formed are somewhat consistent. And by measuring the dimension of this pattern, measurement is performed with high efficiency, for example, realization of a short processing time.

Moreover, a dimension refers to the dimension value of the direction along the board surface of the board | substrate W, such as a line width and a space | interval of a pattern, a position of a pattern, and the like. In this case, the diameter of a hole-shaped pattern is also included.

In addition, a projection area | region refers to each area | region on the board | substrate irradiated by exposure light from each projection optical system.                     

At this time, as described in claim 2, when changing the irradiation amount of each exposure light of illumination optical system 4a-4g, the relationship between the irradiation amount change amount of exposure light and the dimension change amount of a pattern image is calculated | required previously based on this relationship. By changing the irradiation amount of exposure light of illumination optical system 4a-4g, the irradiation amount of the optimal exposure light of illumination optical system 4a-4g is calculated | required with high efficiency.

The exposure apparatus according to claim 7 is disposed corresponding to each of the plurality of illumination optical systems 4a to 4g and the illumination optical systems 4a to 4g for illuminating the exposure light from the light source 11 to the mask M. In the exposure apparatus provided with the several projection optical systems 5a-5g which transfer the pattern image of the mask M illuminated by exposure light on the board | substrate W, the projection optical system formed on the board | substrate W ( The illumination optical system 4a-4g based on the measurement result of the dimension measurement instrument 30 which measures the dimension of the pattern image corresponding to each projection area | region Pa-Pg of 5a-5g), and the measurement instrument 30. Optical system 4a-4g which determines each of projection area Pa-Pg at least 1 of the irradiation amount of the exposure light of the light emission, the optical characteristic of the illumination optical system 4a-4g, and the optical characteristic of the projection optical system 5a-5g. It is characterized by including the control system 7 which changes each 5a-5g) individually.

According to this invention, the dimension of the pattern of each projection area | region Pa-Pg on the board | substrate W is measured by the dimension measurement meter 30, and the irradiation amount of the exposure light of illumination optical system 4a-4g, illumination optical system 4a At least one of the optical characteristics of the optical measuring device 4g) and the optical characteristics of the projection optical systems 5a to 5g is changed, respectively, by the measurement results of the dimensional measuring instrument 30. Thus, the irradiation amount of exposure light of each illumination optical system 4a-4g, the optical characteristic of each illumination optical system 4a-4g, and the optical characteristic of each projection optical system 5a-5g are each projection area | region (on the board | substrate W) Since it is adjusted based on the measurement result of each pattern dimension formed in Pa-Pg), even if the characteristic of each optical system 4a-4g, 5a-5g, etc. differ, they are not affected by these, The dimension of the pattern for every projection area | region Pa-Pg formed on (W) is uniformized.

At this time, as described in Claim 8, the irradiation amount measuring instrument 22 which measures the irradiation amount of the exposure light of the projection area | regions Pa-Pg corresponding to each of the projection optical systems 5a-5g on the board | substrate W is measured. At the same time, the control system 7 can change the irradiation amount of each of the exposure light of the illumination optical systems 4a to 4g based on the measurement result of the irradiation measurement instrument 22, so that the respective illumination optical systems 4a to 4g can be changed. The adjustment of the irradiation amount of exposure light measures the irradiation amount of the exposure light in each projection area | region Pa-Pg on the board | substrate W, for example with the irradiation amount measuring instrument 22, and measures each irradiation amount at this time to become uniform. After the irradiation amount of the illumination optical system 4a-4g is adjusted, it is performed based on the measurement result of the dimension measuring instrument 30. FIG.

Like the exposure method according to claim 3 and the exposure apparatus according to claim 9, each of the focus positions as the optical characteristics of the projection optical systems 5a to 5g is determined by the focus position adjusting devices 58, 58a, 61, 61a, and LC. Since the resolution of the projection optical system changes due to the change in use, the apparent size of the pattern image changes, so that the size of each pattern formed in the plurality of projection areas Pa to Pg on the substrate W can be adjusted.

In addition, like the exposure method according to claim 4 and the exposure apparatus according to claim 10, an optical member 70 having a variable opening through which exposure light can pass is provided at a predetermined position on the optical path of the illumination optical system 4a to 4g. In addition, since the resolution is changed by changing the opening of the optical member 70, the size of the pattern can be adjusted.

Alternatively, as in the exposure method according to claim 5 and the exposure apparatus according to claim 11, by changing the numerical aperture as the optical characteristics of the projection optical systems 5a to 5g by using the numerical aperture adjusting device 80, Since the apparent size of the pattern image changes, the size of the pattern to be formed can be adjusted.

In addition, like the exposure method according to claim 6 and the exposure apparatus according to claim 12, the wavelength of the exposure light by each of the illumination optical systems 4a to 4g as the optical characteristics of the illumination optical systems 4a to 4g is a wavelength adjusting device. The dimension of a pattern can also be adjusted by changing using (13).

Embodiment of the Invention

1st Embodiment

Next, a description will be given of a first embodiment of an exposure method and an exposure apparatus of the present invention with reference to the drawings. FIG. 1: is a schematic block diagram of the exposure apparatus of this invention, and FIG. 2 is a perspective view for demonstrating the carriage 9 which supported the mask M and the board | substrate W in FIG.

1 and 2, the exposure apparatus 1 includes a plurality of illumination optical systems 4: 4a to 4g for illuminating the light beam (exposure light) from the light source 11 to the mask M, and the illumination optical system. Corresponding to the field of view aperture 8 arranged in (4) and defining the illumination range of the mask M by this light flux by adjusting the area of the opening S through which the light flux passes, and corresponding to each of these illumination optical systems 4 And a plurality of projection optical systems 5: 5a to 5g and the exposure light of each of the illumination optical systems 4, which are arranged to be disposed and are transferred to the substrate W by transferring the pattern image of the mask M illuminated by the exposure light. It is equipped with a control unit (control system: 7) for adjusting.

Moreover, this exposure apparatus 1 is provided with the dimension measuring instrument 30 which measures the dimension in the shape of the pattern image of the position (projection area) corresponding to each projection optical system 5 formed on the board | substrate W. As shown in FIG. The control unit 7 is capable of independently adjusting the irradiation amount of the exposure light of each of the illumination optical systems 4a to 4g based on the measurement result of the dimension measuring instrument 30. Moreover, the board | substrate W is supported by the board | substrate stage 9a provided in the lower end side of the carriage 9, while the mask M is provided in the mask stage 9b provided in the upper end side of the carriage 9. Is supported. These substrates W and the mask M are integrally supported by the carriage 9.

The illumination optical system 4 includes an light source 11 made of an ultra-high pressure mercury lamp or the like, a light source driver (power source 11a) for driving the light source 11, and an ellipsoid beam that condenses the light beam emitted from the light source 11. (12) and the wavelength filter (wavelength adjusting device) 13 which passes only the wavelength required for exposure among the light beams condensed by this ellipsoidal mirror 12, and the uniform light intensity distribution through the light beam which passed this wavelength filter 13 Fly eye lens 15 and lens systems 14, 16, and 17 for adjusting at a light flux of. At this time, the field stop 8 is disposed between the lens system 16 and the lens system 17 on which the light beam from the fly's eye lens 15 is incident.                     

The illumination optical system 4 is arrange | positioned in multiple numbers (7 of 4a-4g in this embodiment) (however, only the thing corresponding to the lens system 17 is shown in FIG. 1 for convenience), and several illumination optical systems 4a- The exposure light emitted from each of 4g) illuminates a different small amount area (lighting area) on the mask M, respectively.

The field stop 8 generates, for example, a rectangular opening S by combining a pair of wings bent in a planar L shape in a state orthogonal to the optical axis of the light beam. This makes it possible to move in the plane perpendicular to the optical axis. That is, the aperture stop 8 is capable of changing the size of the opening S in accordance with the positional change of these vanes, and the light flux passing through the opening S of the light beams incident from the fly-eye lens 15 (no Only light) is sent to the lens system 17 side. A plurality of visual apertures 8 are provided so as to correspond to the respective illumination optical systems 4a to 4g.

In the mask M supported by the mask stage 9b, a pattern to be transferred to the substrate W is formed. Then, each illumination region is defined by each field stop 8, and the respective areas (illumination regions) of the mask M are illuminated by respective exposure light transmitted through each lens system 17.

The half mirror 18 is provided between the fly-eye lens 15 and the lens system 16 among the optical paths of the illumination optical systems 4a to 4g. The half mirror 18 is configured to cause a part of each luminous flux of the illumination optical systems 4a to 4g to enter the detector 20 through the lens system 19. The detectors 20 are provided in plural (in this case, seven) corresponding to the respective illumination optical systems 4a to 4g, and always independently detect the intensity of each luminous flux of each of the illumination optical systems 4a to 4g. At the same time, each detection signal is sent to the control unit 7. That is, the irradiation amount of the exposure light of each illumination optical system 4a-4g (the irradiation amount of each light source 11 installed in each illumination optical system 4a-4g) is installed so that detection is possible independently by each detector 20. Each detection signal is sent to the control unit 7.

The filter 41 is formed in the optical path downstream of the lens system 14. As shown in FIG. 3, this filter 41 is patterned on the glass plate 41a by foot shape etc. by Cr etc., and is formed so that a transmittance may change gradually linearly in a certain range along a Y direction. And the filter drive part 42 connected to this filter 41 moves the filter 41 to a Y direction based on the instruction | indication of the control part 7. As shown in FIG. The control part 7 drives the filter drive part 42, moves the filter 41 based on the detection result of the detector 20, and adjusts the light quantity for each optical path.

The projection optical system 5: 5a to 5g forms a pattern image existing in the illumination range of the mask M defined by the opening S on the substrate W, and pattern the image on a specific region of the substrate W. The light emitting device is configured to expose the light emitting device, and is disposed corresponding to each of the illumination optical systems 4a to 4g. At this time, the projection optical systems 5a, 5c, 5e and 5g and the projection optical systems 5b, 5d and 5f are arranged in two rows, and each of these projection optical systems 5a to 5g is an illumination optical system 4a to The plurality of exposure light emitted from 4g) and transmitted through the mask M is transmitted, and the pattern image formed in the mask M is projected onto the substrate W supported by the substrate stage 9a. That is, the exposure light which permeate | transmitted through each projection optical system 5a-5g forms the pattern image corresponding to the illumination area of the mask M in the different projection area | region on the board | substrate W. As shown in FIG.

As shown in Fig. 4, each projection optical system 5a to 5g includes an image shift mechanism 53 to which the exposure light transmitted through the mask M is incident, two sets of reflection refractive optical systems 54 and 55, and a field of view. An aperture 56 and a magnification adjusting mechanism 57 are provided.

The image shift mechanism 53 shifts the pattern image of the mask M to an X direction or a Y direction, for example by rotating two parallel plate glass about a Y axis or a Z axis, respectively. The exposure light transmitted through the image shift mechanism 53 is incident on the first set of reflection refractive optical systems 54.

The refracting optical system 54 forms an intermediate image of the mask M pattern, and includes a right angle prism 58, a lens 59, and a concave mirror 60. A prism shifter 58a is connected to the right prism 58, and the prism shifter 58a causes the right angle prism 58 to rotate about the Z axis to rotate the pattern image of the mask M. FIG. It is. In addition, the rectangular prism 58 is movable by the prism moving device 58a in the direction of entrance (in the X direction) with respect to the optical path in the drawing.

The field stop 56 is arranged at the intermediate image position of the pattern of the mask M. FIG. The field stop 56 sets the projection area | region (Pa-Pg: see FIG. 5) on the board | substrate W. As shown in FIG. The exposure light which has passed through the field stop 56 is incident on the second set of reflection refractive optical systems 55. The reflective refractive optical system 55 is provided with a right prism 61, a lens 62, and a concave mirror 63 similarly to the reflective refractive optical system 54. In addition, the prism moving device 61a is also connected to the rectangular prism 61, and is freely rotated around the Z axis, so that the pattern image of the mask M is rotated. In addition, the rectangular prism 61 is movable with respect to an optical path in the direction of entrance (X direction) by the prism moving device 61a.

 The exposure light emitted from the reflection refractive optical system 55 forms an image of the pattern of the mask M on the substrate W in a standing equal magnification. In the reflection refractive optical system 55, a magnification adjusting mechanism 57 is provided in the optical path reaching the right angle prism 61 through the lens 62. The magnification adjusting mechanism 57 is composed of three lenses of, for example, flat convex lens, biconvex lens, and flat convex lens, and the biconvex lens positioned between the flat convex lens and the flat convex lens is Z-axis. The magnification of the pattern image of the mask M is changed by moving in the direction. In addition, the magnification adjusting mechanism 57 may be provided in the optical path which is reflected by the concave mirror 63 and reaches the lens 62. In addition, a magnification adjusting mechanism 57 may be provided between the reflective refractive optical system 55 and the substrate W. FIG.

The carriage 9 which integrally supports the mask M and the substrate W is provided to be movable in the X direction in the figure. In this case, as shown in FIG. 2, the carriage 9 is provided to be movable along the X guide shaft 23 by a drive source (not shown). That is, by moving the carriage 9 along the X guide axis 23, the carriage 9 is provided so that it may move relative to the illumination optical system 4 and the projection optical system 5. As shown in FIG. At this time, each illumination optical system 4a-4g and each projection optical system 5a-5g are being fixed by the fixed support part which is not shown in figure.

Each projection optical system 5a-5g arrange | positioned in the shape of a cross is arrange | positioned so that the mutually adjacent projection optical systems (for example, projection optical systems 5a and 5b, 5b, and 5c) may be displaced by a predetermined amount in the X direction. Therefore, as shown in FIG. 5, in the projection areas Pa to Pg on the substrate W formed by the exposure light passing through each of the projection optical systems 5a to 5g, regions adjacent to each other (for example, Pa and Pb, Pb and Pc are projected to be displaced by a predetermined amount in the X direction of the figure. At this time, the ends of the projection areas adjacent to each other are arranged so as to overlap a predetermined amount (for example, 5 mm) in the Y direction in FIG. In other words, the plurality of projection optical systems 5a to 5g are disposed in the Y direction while being displaced by a predetermined amount in the X direction so as to correspond to the arrangement of the projection areas Pa to Pg. Moreover, arrangement | positioning of several illumination optical system 4a-4g is arrange | positioned so that the illumination area | region on the mask M may become the same arrangement | positioning as the said projection area | regions Pa-Pg, ie, corresponding to projection optical system 5a-5g. . In this case, each of the projection optical systems 5a to 5g has an equal magnification system.

Then, as the carriage 9 supporting the mask M and the substrate W integrally moves along the X guide axis 23, that is, in the X direction with respect to the illumination optical system 4 and the projection optical system 5. By scanning, the entire surface of the pattern image formed on the mask M is transferred to the shot region EA on the substrate W. As shown in FIG.

The illuminance sensor which measures the irradiation amount of the exposure light of the position corresponding to each projection optical system 4a-4g on this board | substrate W in a part of the board | substrate stage 9a which is the side which supports the board | substrate W among the carriage 9 Irradiation measurement instrument 22 is installed. This illuminance sensor 22 has the guide shaft 24 in the Y direction on the carriage 9, and is arrange | positioned so that it may become the height of the same plane as the board | substrate W. As shown in FIG. That is, the illuminance sensor 22 is provided so that the illuminance sensor drive part 21 can move to the direction (Y direction) orthogonal to the moving direction (X direction) of the carriage 9 (substrate stage 9a).

The illuminance sensor 22 corresponds to the projection optical systems 5a to 5g by the movement of the carriage 9 in the X direction and the movement of the illuminance sensor drive part 21 in the Y direction prior to one or a plurality of exposures. It scans under each projection area | region Pa-Pg. Therefore, the illumination light intensity (illuminance) on the exposure surface of the board | substrate W is detected by the illuminance sensor 22 two-dimensionally. The illuminance data detected by the illuminance sensor 22 is sent to the control unit 7.

The line width measuring instrument (dimension measuring instrument 30) is for measuring the size of a pattern formed in each projection area Pa to Pg corresponding to each projection optical system 5a to 5g. In this case, the line width measuring instrument 30 measures the line width of the pattern formed on the substrate W. For example, an optical interference measuring instrument, an optical type such as a long-range SEM, or an electron beam type measuring instrument can be used. have.

In addition, the dimension here refers to the dimension value of the direction along the board surface of the board | substrate W, such as a line width, a space | interval, and a pattern position of a pattern. In this case, the diameter of a hole-shaped pattern is also included.                     

The line width measuring instrument 30 measures the line width of the pattern of each projection area Pa to Pg on the substrate W on which the pattern image of the mask M is projected and developed. In order to measure the pattern line width of the board | substrate W supported by the board | substrate stage 9a, it is installed in the carriage 9 vicinity. And line width data (dimension data) of the pattern of each projection area | region Pa-Pg on the board | substrate W detected by this line width measuring device 30 is sent to the control part 7. As shown in FIG.

An operation of transferring the pattern image of the mask M onto the substrate W by the exposure apparatus 1 having such a configuration will be described.

Prior to exposure, the illuminance sensor 22 is driven in the Y direction by the illuminance sensor driver 21, and the carriage 9 is driven in the X direction. Thus, the illuminance sensor 22 is scanned under the projection areas Pa to Pg corresponding to the projection optical systems 5a to 5g. At this time, the illuminance on the exposed surface of the substrate W is measured by the illuminance sensor 22 that scans.

The detection signal of each illuminance of each projection area | region Pa-Pg on the board | substrate W detected by the illuminance sensor 22 is sent to the control part 7. As shown in FIG. Based on the detection signal of this illuminance sensor 22, the control part 7 makes each illumination optical system 4a-4g so that illumination intensity of projection area Pa-Pg corresponding to each projection optical system 5a-5g may be made uniform. The exposure amount of the exposure light is adjusted while detecting by the detectors 20.

That is, before performing an exposure process, the illuminance sensor 22 is used and it sets so that the illuminance of the exposure light of each projection area | region Pa-Pg may become uniform.                     

Subsequently, the mask M and the substrate W are supplied to the mask stage 9b and the substrate stage 9a by a loader (not shown), respectively. The substrate W and the mask M supplied to each of the stages 9a and 9b are aligned by an alignment system not shown with respect to the illumination optical system 4 and the projection optical system 5.

After the alignment of the mask M and the substrate W is finished, the carriage 9 is driven along the X guide shaft 23. The mask M and the substrate W are integrally scanned in the state supported by the carriage 9. On the other hand, exposure light is emitted from the illumination optical system 4a-4g toward the mask M. FIG. These exposure light passes through the mask M to scan, respectively, on the board | substrate W which scans with the mask M through the projection optical systems 5a-5g provided corresponding to each illumination optical system 4a-4g, respectively. The pattern image of the mask M is imaged in different projection area Pa-Pg. In this way, the pattern image formed on the mask M is transferred to the substrate W. FIG.

As described above, one exposure to the substrate W is performed in a controlled state so that the illuminance of each projection area Pa to Pg becomes uniform.

The development process is performed on the exposed substrate W in a state where the roughness of each projection area Pa to Pg is uniform. The board | substrate W which completed the development process can measure the line width of the pattern formed in each projection area | region Pa-Pg by the line width measuring device 30. As shown in FIG. The line width measuring instrument 30 sends the measured line width data to the control unit 7. The control part 7 adjusts the irradiation amount of the exposure light of each illumination optical system 4a-4g based on the measurement result of the line width measuring device 30. FIG.                     

The control part 7 measures the dimension of the pattern of each projection area | region Pa-Pg previously formed in correspondence with each projection optical system 5a-5g on the board | substrate W by the line width measuring device 30, and this measurement result Based on this, the irradiation amount of exposure light of each illumination optical system 4a-4g is adjusted so that the line width of the pattern of each projection area | region Pa-Pg may become a target value.

At this time, the control part 7 adjusts the irradiation amount of the exposure light of illumination optical system 4a-4g based on the relationship between the irradiation amount change amount of exposure light calculated | required previously, and the linewidth change amount (dimension change amount) of a pattern image.

In this case, a plurality of pieces of data of the line width change amount of the pattern image on the substrate W when the irradiation amount of the exposure light is arbitrarily changed are obtained in advance, and the measurement results of the line width measuring instrument 30 are based on the plurality of data (data table). The irradiation amount of the exposure light of the illumination optical systems 4a to 4g is adjusted so that the target value (line width of the target) coincides.

That is, the relationship between the amount of change in the dose of the illumination optical system 4 and the amount of change in the line width of the pattern image of the substrate W is determined by the experimental identification of the amount of change in the line width of the pattern image of the substrate W to the amount of change in the amount of dose of the illumination optical system 4 The setting can be made in advance based on the result.

Or based on the above-mentioned data table, the relationship between the irradiation amount change amount of exposure light of illumination optical system 4a-4g and the linewidth change amount of the pattern image of the board | substrate W with respect to this is calculated | required as a relational formula, and based on this relationship formula The irradiation amount of exposure light of illumination optical system 4a-4g can also be adjusted from the measurement result of 30). In other words, a relational expression is obtained by obtaining data under a plurality of conditions of the relationship between the dose change amount and the line width change amount, and fitting the data.

Based on the data table or relational expression mentioned above, the control part 7 adjusts the irradiation amount of the exposure light of illumination optical systems 4a-4g so that the line width of a pattern image on the board | substrate W may be set as a target line width. That is, each projection area is specifically set so that the line width of each pattern of each projection area Pa to Pg becomes a target value based on the measurement result of the line width of the pattern image by the line width measuring instrument 30 and the data table or relational expression. Each illumination optical system 4a-4g is detected by the control part 7, detecting the irradiation amount of exposure light with the detector 20 attached to illumination optical system 4a-4g so that the line width of each pattern of Pa-Pg may become uniform. ) (I.e., the power supply 11a of the light source 11) is adjusted.

And when adjustment of the irradiation amount of exposure light is complete | finished, the exposure process with respect to the board | substrate W is again performed.

In this way, the line dose (dimension) of the pattern formed on the substrate W is measured, and the exposure dose of the exposure light of each of the illumination optical systems 4a to 4g so that the line width of each of the projection areas Pa to Pg becomes uniform based on the measurement result. Since this is adjusted independently, the line widths of the patterns of the plurality of projection areas Pa to Pg formed on the substrate W are reliably uniform.

That is, even if the exposure amount of exposure light of each illumination optical system 4a-4g is set uniformly, the line | wire width formed on the board | substrate W by the difference of the characteristic of each lens system including the projection optical system 5, etc. is each The deviation may occur due to the projection areas Pa to Pg.

However, the line width of the pattern of each projection area | region Pa-Pg formed in the board | substrate W by the exposure and image development process is measured directly, and the irradiation amount of each illumination optical system 4a-4g is based on this measurement result. By adjusting each independently, the line width of each projection area | region Pa-Pg of the board | substrate W is reliably uniform even if there exists a deviation in the characteristic of each lens system and each apparatus, or projection sensitivity, including the projection optical system 5, or a resist sensitivity. . Therefore, productivity of the board | substrate W manufactured is improved.

The relationship between the amount of change in the exposure amount of the exposure light of the illumination optical system 4 and the amount of change in the line width of the pattern image formed on the substrate W is obtained in advance as a relational expression or as a data table, and based on this relationship, the exposure of the illumination optical systems 4a to 4g. By adjusting the irradiation amount of light, the illumination optical systems 4a to 4g are efficiently set to the optimal exposure amount.

Moreover, although the relational formula is calculated | required by fitting based on the some data of the line | wire width change amount according to the irradiation amount change amount as mentioned above, following formula (1) is mentioned as an example in this case.

ΔD = (a (E / E ₀ ) + b) ΔE... (One)

here,

E: dose

ΔE: dose change

D: line width (㎛)

ΔD: Line width change amount (㎛)

E ₀ : Optimum dose (doses with matching line and space)

a: parameter obtained by fitting                     

b: parameter obtained by fitting

to be.

For example, when E = E ₀ in a = -3 and b = 5, the line width change amount (DELTA) D becomes 0.2 micrometer with respect to 10% of irradiation amount change (ΔE). By obtaining a relational expression such as this formula (1) in advance, and changing the irradiation amount with respect to the target line width change amount (DELTA) D, the optimum irradiation amount of each illumination optical system 4a-4g can be calculated | required easily with high efficiency.

In measuring the line width of the pattern of the substrate W by the line width measuring instrument 30, the irradiation amount of exposure light to each projection area Pa to Pg of the substrate W is previously measured by the illuminance sensor 22. Based on this, the roughness of each projection area | region Pa-Pg is made uniform, and the line width measurement (dimension measurement) by the line width measuring device 30 is performed with respect to the board | substrate W exposed by uniform illuminance. Therefore, line width measurement is performed with high efficiency.

That is, the line width of the pattern of each projection area | region Pa-Pg matches to some extent by making the irradiation amount of the exposure light in each projection area | region Pa-Pg on the board | substrate W into a uniform state. Therefore, the measurement of the line width of each projection area | region Pa-Pg on the board | substrate W in the line width measuring device 30 is performed with high efficiency, for example, realization of a short process time.

In addition, although the signal line of the line width measuring device 30 was connected to the exposure apparatus 1, it demonstrated that the operator measures the dimension of the pattern in the line width measuring apparatus separate from the exposure apparatus 1, It is also possible to input the dimension value of the pattern.

Moreover, the optimal irradiation amount can also be instruct | indicated to the control part 7 from the dimension of the calculated | required pattern.

In addition, the shape of the pattern formed on the board | substrate W is not limited to what has a line width. For example, this exposure apparatus 1 is applicable to manufacture of a contact hole. The contact holes formed on the substrate for the liquid crystal display element pattern need to be formed in a uniform size on the substrate W. However, by manufacturing by the exposure method and the exposure apparatus of the present embodiment, even if the shape of the pattern is a hole shape The shape of each pattern of the plurality of projection areas can be formed uniformly.

2nd Embodiment

Next, a description will be given of a second embodiment of the exposure method and exposure apparatus of the present invention with reference to the drawings. Here, the same or equivalent components as those of the first embodiment described above will be denoted by the same reference numerals, and the description thereof will be simplified or omitted.

In 1st Embodiment, each dimension of the pattern corresponding to each projection area | region Pa-Pg formed on the board | substrate W is measured, and exposure of each illumination optical system is made so that each dimension may become a target value based on this measurement result. Although the irradiation dose of light is changed, in the second embodiment, the focal position of each of the projection optical systems 5a to 5g among the optical characteristics of the projection optical system 5 in order to set the dimension of the pattern formed on the substrate W as a target value. To change.

The focal position adjusting device which can change the focal position of the projection optical system 5: 5a to 5g includes a prism movement of the projection optical system 5 shown in FIG. 4, which can move the right angle prism 58 or 61 in the X direction in the drawing. It is comprised by the apparatus 58a or 61a. The focal position of the projection optical system 5 changes by moving the rectangular prism 58 by a predetermined amount by the prism moving device 58a in the X direction. The focal position of the projection optical system 5 is changed by changing the focal position of the projection optical system 5 by the focal position adjusting device equipped with the rectangular prism 58 and the prism shifting device 58a capable of moving the rectangular prism 58. The exposure process surface of the board | substrate W does not correspond, and the exposure light which permeate | transmitted through the projection optical system 5 becomes a defocus state in the exposure process surface of the board | substrate W. As shown in FIG. Therefore, the line width of the pattern image formed on the substrate W becomes thick in appearance. By performing the exposure treatment in this defocused state, the line width of the pattern formed on the substrate W is subjected to the exposure treatment in a state in which the exposure processing surface of the substrate W is matched with the focal position of the projection optical system 5. It is formed thicker than when it is done.

An operation of transferring the pattern image formed on the mask M by the exposure apparatus 1 having the above-described configuration onto the substrate W will be described.

First, similarly to the first embodiment, before performing the exposure process, the illuminance sensor 22 is used to set the illuminance of the exposure light of each projection area Pa to Pg to be uniform. Subsequently, the mask M and the substrate W are loaded on the mask stage 9b and the substrate stage 9a, respectively, and then the first exposure treatment is performed on the substrate W. As shown in FIG.

The developing process is performed on the exposed substrate W in a state where the roughness of each of the projection regions Pa to Pg is uniform. Subsequently, the line width measuring device 30 measures the line width of the pattern formed in each of the projection areas Pa to Pg of the substrate W subjected to the development treatment, and outputs the measured line width data to the control unit 7. The control unit 7 individually drives the prism moving devices 58a or 61a of each projection optical system 5a to 5g based on the measurement result of the line width measuring instrument 30. The rectangular prism 58 or 61 is moved in the X direction by the driving of the prism shifting device 58a or 61a, respectively, so that the respective focal positions of the projection optical systems 5a to 5g are individually changed.

At this time, the control unit 7 determines the substrate (based on the relationship (data table, relational expression) between the change amount of the focal position of the projection optical system 5 previously obtained and the line width change amount (dimension change amount) of the pattern image formed at that time). The prism driving device 58a is driven so that the line width of the pattern image on W) becomes a target value, and the respective focal positions of the projection optical systems 5a to 5g are adjusted. Specifically, the respective focal positions of the projection optical systems 5a to 5g are adjusted so that the line width of each pattern in each projection area Pa to Pg is uniform. For example, when it is desired to thicken the line width of the pattern in an arbitrary projection area, the focal position is largely shifted from the exposure processing surface of the substrate W.

And when adjustment of each focal position of each projection optical system 5a-5g is completed, exposure process with respect to the board | substrate W is again performed.

Thus, the line width (dimension) of the pattern formed in the board | substrate W is measured, and the focal position of each projection optical system 5a-5g is made so that the line width of each projection area | region Pa-Pg may become uniform based on this measurement result. By changing independently of each other, the line widths of the patterns of the plurality of projection areas Pa to Pg formed on the substrate W are reliably uniform. At this time, if the line width of the pattern on the substrate W in the arbitrary projection area is narrower than the line width of the pattern in the other projection area, for example, by the line width measuring device 30, the projection optical system 5 corresponding to this projection area ), The line width of the pattern formed on the substrate W can be made thick by shifting the focal position of the substrate and the exposed surface of the substrate W to make the line width of the apparent pattern image thicker.

In the present embodiment, the focus position adjusting device for changing the focus position of the projection optical system 5 is constituted by the prism shifting device 58a that moves the right angle prism 58 constituting the projection optical system 5. For example, as shown in FIG. 6, it can comprise with the lens controller LC arrange | positioned at the predetermined position on the optical path of the projection optical system 5. As shown in FIG. As shown in Fig. 6, the lens controller LC is constituted by a box which is capable of transmitting exposure light provided downstream of the optical path of the rectangular prism 61, and the gas type of the sealed space formed by the box and By adjusting the refractive index by changing the pressure or temperature, the focus position of the projection optical system 5 can be changed to a desired position. At this time, the rectangular prism 58 or 61 does not move in the X direction.

Alternatively, the lens controller LC may not be configured by a box, but, for example, as shown in FIG. 7, a configuration in which a plurality of (two) prisms LC1 and LC2 are combined may be used. Then, by moving these prisms LC1 and LC2 in the vertical direction with respect to the optical path of the exposure light, the focus position of the projection optical system 5 is changed.

Further, the focal position adjusting device includes a plurality of optical members (optical devices) having different optical characteristics (refractive index), and a support mechanism for supporting each of the optical members so as to be able to enter and exit at a predetermined position on the optical path of the projection optical system. The position of the focus of the projection optical system can be changed by arranging a predetermined optical member among the plurality of prepared optical members on the optical path.

Third embodiment

Next, a third embodiment of the exposure method and the exposure apparatus of the present invention will be described with reference to the drawings. Here, the same or equivalent components as those of the first and second embodiments described above are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

In 1st Embodiment, the dimension of the pattern corresponding to each projection area | region Pa-Pg on the board | substrate W is measured, and based on this measurement result, the illumination optical system 4a-4g of each dimension becomes a target value. Although it is a structure which changes the irradiation amount of each exposure light, and is a structure which changes each focal position of projection optical systems 5a-5g in 2nd Embodiment, in each 3rd embodiment, each of illumination optical systems 4a-4g is provided. An optical member having a variable aperture through which exposure light can pass is provided at a predetermined position on the optical path, and the line width of the pattern image on the substrate W is adjusted by changing the size of the aperture.

In the present embodiment, as shown in Fig. 1, a variable aperture (optical member: 70) having a variable aperture through which an exposure light passes through an optical path downstream of the fly's eye lens 15 in the illumination optical system 4a or 4b to 4g. ), And the line width of the pattern formed on the substrate W is adjusted by adjusting the size of this opening. This variable stop 70 is arranged in the pupil plane seen from the fly's eye lens 15. The resolution of the optical system is changed by changing the size of the opening, and the line width (dimension) of the pattern formed on the substrate W is changed in accordance with the change of the resolution.

That is, the smaller the opening of the variable stop 70 lowers the resolution, so that the line width in appearance of the pattern image on the substrate W becomes thicker, while the larger the opening increases the resolution, so that the pattern image on the substrate W increases in appearance. Line width becomes narrower.

In the case of performing exposure processing by the exposure apparatus 1 having the above-described configuration, similarly to the first and second embodiments, each projection area (using the illuminance sensor 22 is first used before the exposure processing). Pa-Pg) is set so that the illumination intensity of exposure light may become uniform. And the mask M and the board | substrate W are loaded in the mask stage 9b and the board | substrate stage 9a, respectively, and the 1st exposure process with respect to the board | substrate W is performed. And the development process is performed with respect to this board | substrate W, and the line width of the pattern formed in each projection area | region Pa-Pg is measured by the line width measuring device 30. As shown in FIG. The control unit 7 individually changes the sizes of the openings of the variable stops 70 provided in the respective illumination optical systems 4a to 4g, respectively, based on the measurement result of the line width measuring instrument 30.

At this time, the control unit 7 determines the substrate (based on the relationship (data table, relational expression) between the change amount of the size of the opening of the variable stop 70 previously obtained and the line width change amount (dimension change amount) of the pattern image formed at this time). The openings of the variable stops 70 are individually adjusted so that the line width of the pattern image of W) becomes the target line width. Specifically, the sizes of the openings of the variable stops 70 provided in the respective illumination optical systems 4a to 4g are respectively adjusted so that the line widths of the respective patterns of the projection areas Pa to Pg are uniform. For example, when the line width of the pattern in a certain projection area is to be made thick, the opening of the variable stop 70 is made small.

And when adjustment of the magnitude | size of the opening of the variable stopper 70 arrange | positioned in each illumination optical system 4a-4g is complete | finished, exposure process with respect to the board | substrate W is again performed.

As described above, the line width of the pattern formed in the substrate W is also adjusted by individually adjusting the sizes of the openings of the variable stops 70 provided at predetermined positions on the respective optical paths of the respective illumination optical systems 4a to 4g. I can adjust it. At this time, for example, when the line width of the pattern on the substrate W of an arbitrary projection area is measured by the line width measuring device 30 to be narrower than the line width of the pattern of another projection area, the illumination optical system corresponding to this projection area ( The line width of the pattern formed in the board | substrate W can be thickened by making the opening of the variable stop 70 of 4) small, and making the line width of an apparent pattern image thick. On the other hand, when it is desired to narrow the line width of the pattern, the opening is enlarged.

In addition, since the illuminance of the exposure light on the substrate W is reduced by reducing the aperture of the variable stopper 70, the light source is based on the detection result of the detector 20 so as to obtain the same illuminance as before changing the size of the aperture. The output of the drive unit 11a is raised or the filter 41 is driven by the filter drive unit 42 to increase the illuminance.

In addition, also in this embodiment, in addition to providing the variable aperture 70 with a variable opening, when a plurality of apertures each having openings of different sizes are prepared and a predetermined line width is to be obtained, the opening has a predetermined opening. It is also possible to set the diaphragm in the illumination optical system. It is also possible to change the resolution of the projection optical system by using an annular aperture or deformable aperture in the opening of the variable aperture 70.

Fourth embodiment

Next, a fourth embodiment of the exposure method and the exposure apparatus of the present invention will be described with reference to the drawings. Here, the same or equivalent components as those of the first to third embodiments described above will be denoted by the same reference numerals, and the description thereof will be simplified or omitted.

In the fourth embodiment, each numerical aperture of the projection optical systems 5a to 5g is changed among the optical characteristics of the projection optical system 5 in order to set the dimension of the pattern formed on the substrate W as a target value. In order to change the numerical aperture of the projection optical system 5, as shown in FIG. 8, between the right-angle prism 58 and the concave mirror 60 of the reflection refractive optical system 54 in the projection optical system 5a or 5b to 5g. A variable aperture (opening number adjusting device) 80 having a variable aperture through which exposure light can pass is provided, and the numerical aperture is changed by adjusting the size of the aperture. This variable stop 80 is provided at the position of the pupil plane seen from the image plane of the projection optical system 5, and the numerical aperture of the projection optical system 5 changes by changing the aperture.

The resolution is changed by changing the numerical aperture of the projection optical system 5, and the line width (dimension) of the pattern formed on the substrate W is changed with the change of the resolution. That is, since the resolution is lowered when the opening of the variable stop 80 is reduced, the apparent line width of the pattern image on the substrate W becomes thicker, whereas the resolution is increased when the opening is enlarged, so that the pattern image on the substrate W is increased. The line width in appearance is narrowed.

When transferring the pattern image of the mask M to the board | substrate W by the exposure apparatus 1 which has the structure demonstrated above, similarly to the said 1st-3rd embodiment, first, roughness before performing an exposure process. The sensor 22 is used to set the illuminance of the exposure light in each projection area Pa to Pg to be uniform. Then, the mask M and the substrate W are loaded into each of the mask stage 9b and the substrate stage 9a, and then the first exposure treatment is performed on the substrate W. As shown in FIG. And the development process is performed with respect to this board | substrate W, and the line width of the pattern formed in each projection area | region Pa-Pg is measured by the line width measuring device 30. As shown in FIG. The control part 7 changes the size of the opening of the variable stop 80 of each projection optical system 5a-5g individually based on the measurement result of the line width measuring device 30, respectively.

At this time, the control unit 7 is based on the relationship between the size change amount of the opening of the variable stop 80 and the line width change amount (dimension change amount) of the pattern image formed at that time (data table, relational expression). Each opening of the variable stop 80 is individually adjusted so that the line width of the pattern image of W) becomes the target line width. Specifically, the sizes of the openings of the variable stops 80 provided in the respective projection optical systems 5a to 5g are respectively adjusted so that the line widths of the respective patterns of the projection regions Pa to Pg are uniform. For example, when it is desired to thicken the line width of the pattern in an arbitrary projection area, the opening of the variable stop 80 is made small.

Then, when the size adjustment of the opening of the variable stop 80 arranged in each of the projection optical systems 5a to 5g is completed, the exposure processing on the substrate W is performed again.

As described above, the line width of the pattern formed in the substrate W is also adjusted by individually adjusting the size of the aperture of the variable stop 80 provided at a predetermined position on each optical path of each projection optical system 5a to 5g, respectively. Can be adjusted. At this time, if the line width of the pattern on the substrate W in the arbitrary projection area is narrower than the line width of the pattern in the other projection area, for example, by the line width measuring device 30, the projection optical system 5 corresponding to this projection area The line width of the pattern formed in the board | substrate W can be thickened by making the opening of the variable aperture 80 of () small, and making the line width of an apparent pattern image thick. On the other hand, when it is desired to narrow the line width of the pattern, the opening is enlarged.

Moreover, also in this embodiment, since the illumination intensity of the exposure light on the board | substrate W is reduced by reducing the opening of the variable stopper 80, so that the same illumination intensity as before changing the size of an aperture can be obtained, a detector ( On the basis of the detection result of 20), the output of the light source driver 11a is raised or the filter 41 is driven by the filter driver 42 to raise the illuminance.

Moreover, also in this embodiment, in addition to providing the variable aperture 80 with a variable opening, when a plurality of apertures each having an opening of a different size are prepared, and a predetermined line width is to be obtained, it has a predetermined opening. It is also possible to set the stop in the projection optical system.                     

In the present embodiment, the variable stop 80 is provided in the reflective refractive optical system 54, but the variable stop 80 is provided in the pupil plane viewed from the image plane side of the projection optical system 5, and is the reflective refracted type. It can also be provided between the rectangular prism 61 and the concave mirror 63 of the optical system 55.

5th embodiment

Next, a fifth embodiment of the exposure method and the exposure apparatus of the present invention will be described with reference to the drawings. Here, the same or equivalent components as those of the first to fourth embodiments described above are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

In this embodiment, in order to make the dimension of the pattern formed in the board | substrate W into a target value, the wavelength of exposure light is changed. In order to change the wavelength of exposure light, as shown in FIG. 1, the wavelength of exposure light is changed by adjusting the wavelength filter (wavelength adjustment apparatus 13) provided in the illumination optical system 4a or 4b-4g.

As the wavelength of the exposure light changes, the resolution changes, and the line width (dimension) of the pattern formed on the substrate W changes with this change in resolution. That is, the longer the wavelength of the exposure light is, the lower the resolution power becomes, and the apparent line width of the pattern image on the substrate W becomes thick. On the other hand, if the wavelength is shortened, the resolution power becomes high and the apparent line width of the pattern image on the substrate W becomes narrow.

In the case of performing the exposure treatment by the exposure apparatus 1 having the configuration as described above, in the same manner as in the above first to fourth embodiments, the respective illumination intensity sensors 22 are used before the exposure treatment is performed. The illuminance of the exposure light in the projection areas Pa to Pg is set to be uniform. Then, the mask M and the substrate W are loaded into each of the mask stage 9b and the substrate stage 9a, and then the first exposure treatment is performed on the substrate W. As shown in FIG. And the development process is performed with respect to this board | substrate W, and the line width of the pattern formed in each projection area | region Pa-Pg is measured by the line width measuring device 30. As shown in FIG. The control part 7 adjusts the wavelength filter 13 of each illumination optical system 4a-4g based on the measurement result of the linewidth measuring instrument 30, respectively, and adjusts the wavelength of the exposure light of each illumination optical system 4a-4g, respectively. Change them individually.

At this time, the control part 7 controls the pattern of the board | substrate W based on the relationship (data table, relational expression) of the change amount of the wavelength of exposure light calculated | required previously, and the line width change amount (dimension change amount) of the pattern image formed at this time. The wavelength filter 13 is adjusted so that the line width of the image becomes the target line width. Specifically, the wavelength filter 13 provided in each illumination optical system 4a-4g is adjusted, respectively, so that the line | wire width of each pattern of each projection area | region Pa-Pg may be uniform, and the exposure light which has a desired wavelength, respectively. It is made to inject from each illumination optical system 4a-4g, respectively. For example, when the exposure light is composed of g lines, h lines, and i lines, when the line width of the pattern in any projection area is to be thickened, the longest wavelength is increased (or the shortest wavelength). The line width of the pattern can be thickened by reducing or cutting the i line component.

And when adjustment of the wavelength filter 13 arrange | positioned in each of the illumination optical systems 4a-4g is completed, exposure process with respect to the board | substrate W is again performed.                     

As described above, the substrates are adjusted by individually adjusting the wavelength filters 13 provided in each of the illumination optical systems 4a to 4g, and changing the wavelength of the exposure light emitted from the respective illumination optical systems 4a to 4g. The line width of the pattern formed in (W) can be adjusted. At this time, for example, when the line width of the pattern on the substrate W in an arbitrary projection area is narrower than the line width of the pattern of another projection area by the line width measuring instrument 30, the long wavelength component of the exposure light is increased to increase the apparent pattern image. The line width of the pattern formed in the board | substrate W can be thickened by making the line width of thick. On the other hand, when it is desired to narrow the line width of the pattern, the short wavelength component of the exposure light is increased.

On the other hand, also in this embodiment, since the illumination intensity of the exposure light on the board | substrate W decreases by increasing the long wavelength component of exposure light, the detection result of the detector 20 so that the same illumination intensity as before changing the wavelength of exposure light can be obtained. On the basis of this, the output of the light source driver 11a is raised or the filter 41 is driven by the filter driver 42 to raise the illuminance.

In the first to fifth embodiments, the pattern is actually formed on the substrate W by performing the development treatment after the exposure treatment, the dimensions of the pattern are measured, and the line width of the pattern is based on the measurement result. Although it is a structure which adjusts the irradiation amount of exposure light and changes the optical characteristic of an optical system so that it may become uniform, although the line width (dimension) of the actually formed pattern is not measured, for example, the pattern image of a projection area is detected by a detection apparatus, such as CCD. It is also possible to detect and change the optical characteristic of an optical system based on this detection result. In this case, since the state of the pattern image (change state of resolution) can be detected without actually forming a pattern by performing development processing and measuring the size, the state of the pattern image (change state of resolution) can be set at any time. Detection can be performed at intervals or at predetermined timings. And based on this detection result, adjustment of the state of a pattern image can be performed each time.

Exposure apparatus of this embodiment WHEREIN: The step and repeat type exposure which exposes the pattern of the mask M in the state which stopped the mask M and the board | substrate W, and moves the board | substrate W in sequence. Applicable to the device as well.

In addition, although FIG. 1 shows so that it may become a pair relationship with respect to several illumination optical systems 4a-4g, the luminous flux of the light source 11 is divided into optical fibers, etc., and each of the several illumination optical systems 4a-4g is carried out. It can also be distributed to In addition, a plurality of light sources 11 may be provided to mix and distribute light beams. At this time, the irradiation amount of the irradiated light to be irradiated is adjusted to be the desired irradiation amount by inserting a filter that changes the amount of transmitted light such as an ND filter into the optical path, and to control the irradiation amount of the exposure light in each projection area (Pa to Pg). It may be.

Moreover, as an exposure apparatus of this embodiment, it is applicable also to the proximity exposure apparatus which exposes a mask pattern by making a mask and a board | substrate closely contact, without using a projection optical system.

The use of the exposure apparatus is not limited to an exposure apparatus for a liquid crystal that exposes a liquid crystal display element pattern on a square glass plate, for example, an exposure apparatus for semiconductor manufacturing that exposes a circuit pattern to a semiconductor wafer, and a thin film. The present invention can also be widely applied to an exposure apparatus for manufacturing a magnetic head.

The light source of the exposure apparatus of this embodiment is g line (436 nm), h line (405 nm), i line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (193 nm), F2 laser ( 157 nm) as well as charged particle beams such as X-rays and electron beams. For example, when using an electron beam, random electron hexaborite (LaB6) and tantalum (Ta) of a hot electron radiation type can be used as an electron gun. In addition, when using an electron beam, it can also be set as the structure using a mask, and can also be set as the structure which forms a pattern directly on a board | substrate without using a mask.

The magnification of the projection optical system may be any of the reduction system and the magnification system as well as the equal magnification system.

As the projection optical system, when using far ultraviolet rays such as excimer laser, a material that transmits far ultraviolet rays such as quartz and fluorite is used as the base material, and when using F2 laser and X-ray, As an optical system (a reticle also uses a reflective type), and in the case of using an electron beam, an electron optical system composed of an electron lens and a deflector may be used as the optical system. It goes without saying that the optical path through which the electron beam passes is made into a vacuum state.

When a linear motor is used for the substrate stage 9a and the mask stage 9b, any of the air floating type using air bearing and the magnetic floating type using Lorentz force or reactance force can be used. The stage may be of a type that moves along a guide or may be a guideless type in which no guide is provided.                     

When using a planar motor as the driving device for the stage, one of the magnet unit (permanent magnet) and the armature unit may be connected to the stage, and the other side of the magnet unit and the armature unit may be provided on the moving surface side (base) of the stage.

The reaction force generated by the movement of the substrate stage 9a may be discharged mechanically to the floor (ground) using a frame member as described in JP-A-8-166475. The present invention is also applicable to an exposure apparatus having such a structure.

The reaction force generated by the movement of the mask stage 9b may be discharged mechanically to the floor (ground) using a frame member, as described in JP-A-8-330224. The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus of the present embodiment can be manufactured by assembling various subsystems including each component described in the claims of the present application so as to maintain predetermined mechanical precision, electrical precision, and optical precision. In order to secure these various precisions, adjustments for achieving optical precision for various optical systems, adjustments for achieving mechanical precision for various mechanical systems, and adjustments for achieving electrical precision for various electric systems before and after this assembly are performed. This is done. The assembling process from the various subsystems to the exposure apparatus includes mechanical connections, wiring connections of electrical circuits, piping connections of pneumatic circuits, and the like between the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the assembly process to the exposure apparatus of various subsystems is complete | finished, comprehensive adjustment is performed and the various precision as the whole exposure apparatus is ensured. Moreover, it is preferable to manufacture an exposure apparatus in the clean room in which temperature, a clean degree, etc. were managed.

As shown in Fig. 9, the semiconductor device includes a step 201 for designing a function and a performance of the device, a step 202 for producing a mask (reticle) based on the design step, a substrate (a wafer, Step 203 of manufacturing a glass plate, a substrate processing step 204 for exposing a pattern of a mask to a substrate by the exposure apparatus of the above-described embodiment, a device assembly step (a dicing step, a bonding step, a package step) 205, inspection step 206 and the like.

The exposure method and exposure apparatus of the present invention have the following effects.

According to the exposure method of Claim 1 and the exposure apparatus of Claim 7, the dimension of the pattern of each projection area | region on a board | substrate is measured by the dimension measurement meter, the irradiation amount of each exposure light of each illumination optical system, and the optical characteristic of the optical system. Are respectively adjusted by the measurement result of this dimension measurement instrument. In this way, since the amount of exposure of each illumination optical system and the optical characteristics of each optical system are adjusted based on the measurement results of the dimensions of the respective patterns formed in each projection area on the substrate, for example, differences in the characteristics of each optical system are different. Even if there are any, these can be corrected to match the dimensions of the pattern formed in the plurality of projection areas on the substrate. Therefore, productivity of the board | substrate manufactured is improved.

According to the exposure method of Claim 2, the optimum exposure amount of an illumination optical system is calculated | required in advance by obtaining the relationship between the irradiation amount change amount of exposure light, and the dimensional change amount of a pattern image, and adjusting the irradiation amount of exposure light of an illumination optical system based on this relationship. At the same time, the size of the pattern formed in the plurality of projection areas on the substrate is matched with high efficiency.

According to the exposure apparatus according to claim 8, the irradiation system for measuring the irradiation amount of the exposure light at a position corresponding to each projection optical system on the substrate is provided, and the control system is based on each illumination optical system based on the measurement result of the irradiation meter. By adjusting the irradiation amount of the exposure light of the illumination light, the adjustment of the irradiation amount of the exposure light of each illumination optical system, for example, measures the irradiation amount of the exposure light in each projection area on the substrate by the irradiation amount measuring instrument, and each irradiation amount at this time The irradiation amount of each illumination optical system may be adjusted to be uniform, and then performed based on the measurement result of the dimensional measurement system. Thus, the shape of the pattern of each projection area on the substrate is uniformed with high efficiency.

According to the exposure method according to claim 3 and the exposure apparatus according to claim 9, since the resolution of the projection optical system is changed by changing the respective focal positions by the optical characteristics of the projection optical system, the apparent dimensions of the pattern image are changed. The size of the pattern formed in the plurality of projection areas can be made uniform.

According to the exposure method of Claim 4 and the exposure apparatus of Claim 10, the optical member which has a variable opening which an exposure light can pass through is provided in the predetermined position on the optical path of an illumination optical system, and changes the opening of this optical member. Since the resolution of the projection optical system changes and the apparent dimensions of the pattern image change, it is possible to make the dimensions of the pattern formed in the plurality of projection areas on the substrate uniform.

According to the exposure method of Claim 5 and the exposure apparatus of Claim 11, since the resolution of a projection optical system changes by changing each numerical aperture as an optical characteristic of a projection optical system, the apparent dimension of a pattern image changes, it forms. The dimension of the pattern to be made can be made uniform.

According to the exposure method according to claim 6 and the exposure apparatus according to claim 12, as the optical characteristics of the illumination optical system, the resolution of the projection optical system is changed by changing the wavelength of the exposure light by each of the illumination optical system so that the apparent dimension of the pattern image is changed. Since is changed, the dimension of the pattern to be formed can be made uniform.

Claims (17)

An exposure method of illuminating exposure light to a mask from a plurality of illumination optical systems and transferring a pattern image of the mask onto a substrate through a plurality of projection optical systems arranged corresponding to each of the illumination optical systems, In advance, an exposure process is performed by setting an irradiation amount of exposure light of a projection area corresponding to each of the projection optical systems on the substrate to a predetermined amount, By measuring the respective dimensions of the pattern image corresponding to each projection area formed on the substrate by the exposure process, so that the respective dimensions become a target value based on this measurement result, At least one of an optical characteristic of an illumination optical system and an optical characteristic of a projection optical system is individually changed for each of the projection regions. The method of claim 1, The exposure method of the exposure amount change amount of the exposure light and the dimensional change amount of the pattern image is obtained in advance, and the exposure amount of the exposure light of the illumination optical system is changed based on the relationship. The method according to claim 1 or 2, When changing the respective focus positions as the optical characteristics of the projection optical system, The relationship between the amount of change in focal position and the amount of dimensional change in the pattern image is calculated in advance, and the focus position of the projection optical system is changed based on the relationship. The method according to claim 1 or 2, An optical member having a variable opening through which exposure light can pass at a predetermined position on an optical path of the illumination optical system, The relationship between the change amount of the opening and the change amount of the dimension of the pattern image is obtained in advance, and the opening of the optical member is changed based on the relationship. The method of claim 4, wherein When changing each numerical aperture as the optical characteristic of the projection optical system, And obtaining a relationship between the change amount of the numerical aperture and the change amount of the dimension of the pattern image in advance, and changing the numerical aperture of the projection optical system based on the relationship. The method of claim 1, When changing the wavelength of the exposure light by each of the illumination optical system as the optical characteristic of the illumination optical system, The relationship between the amount of change in wavelength and the amount of dimensional change in the pattern image is obtained in advance, and the wavelength of the exposure light by the illumination optical system is changed based on this relationship. A plurality of illumination optical systems for illuminating the exposure light from the light source to the mask, An exposure apparatus having a plurality of projection optical systems disposed corresponding to each of the illumination optical systems and transferring a pattern image of the mask illuminated by the exposure light onto a substrate. A dimension measuring instrument for measuring a dimension of a pattern image corresponding to each projection area of the projection optical system formed on the substrate; And a control system for individually changing at least one of an optical characteristic of an illumination optical system and an optical characteristic of a projection optical system separately for each of the projection area systems based on the measurement result of the dimensional measurement system. The method of claim 7, wherein And an irradiation dose measuring instrument for measuring an irradiation amount of exposure light of a projection area corresponding to each of the projection optical systems on the substrate, And said control system is capable of changing an irradiation amount of exposure light of each of said illumination optical systems based on a measurement result of said irradiation amount measuring instrument. The method according to claim 7 or 8, And said control system is provided with a focusing position adjusting device for changing each focusing position of said projection optical system. The method according to claim 7 or 8, And said control system is provided at a predetermined position on an optical path of said illumination optical system, and has an optical member having a variable opening through which exposure light can pass. The method of claim 10, And the control system is provided with a numerical aperture adjusting device capable of changing the numerical aperture of the projection optical system. The method according to claim 7 or 8, And the control system includes a wavelength adjusting device capable of changing the wavelength of exposure light by each of the illumination optical systems. The method of claim 3, wherein An optical member having a variable opening through which exposure light can pass at a predetermined position on an optical path of the illumination optical system, The relationship between the change amount of the opening and the change amount of the dimension of the image of the pattern is calculated in advance, and the opening of the optical member is changed based on the relationship. The method of claim 9, And the control system has an optical member which is set at a predetermined position on the optical path of the illumination optical system and has a variable opening through which exposure light can pass. The method of claim 14, And the control system is provided with a numerical aperture adjusting device capable of changing the numerical aperture of the projection optical system. The method of claim 9, And the control system includes a wavelength adjusting device capable of changing the wavelength of exposure light by each of the illumination optical systems. The method of claim 11, The numerical aperture adjusting device uses an annular stopper or deformed stopper.

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