JP3460129B2 - Exposure apparatus and exposure method - Google Patents

Exposure apparatus and exposure method

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Publication number
JP3460129B2
JP3460129B2 JP21531194A JP21531194A JP3460129B2 JP 3460129 B2 JP3460129 B2 JP 3460129B2 JP 21531194 A JP21531194 A JP 21531194A JP 21531194 A JP21531194 A JP 21531194A JP 3460129 B2 JP3460129 B2 JP 3460129B2
Authority
JP
Japan
Prior art keywords
mask
photosensitive substrate
side reference
projection optical
reference mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21531194A
Other languages
Japanese (ja)
Other versions
JPH0855783A (en
Inventor
圭 奈良
幸雄 柿崎
義雄 深海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP21531194A priority Critical patent/JP3460129B2/en
Priority to US08/515,783 priority patent/US5617211A/en
Priority to KR1019950025127A priority patent/KR100381629B1/en
Publication of JPH0855783A publication Critical patent/JPH0855783A/en
Application granted granted Critical
Publication of JP3460129B2 publication Critical patent/JP3460129B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は露光装置に関し、特に半
導体素子や液晶表示基板製造用の露光装置で照明光学系
及び投影光学系を複数有するするものに適用し得る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, and in particular, it can be applied to an exposure apparatus for manufacturing a semiconductor element or a liquid crystal display substrate, which has a plurality of illumination optical systems and projection optical systems.

【０００２】[0002]

【従来の技術】従来、パーソナルコンピユータやテレビ
ジヨン受像機の表示素子として、液晶表示基板が多用さ
れるようになつた。この液晶表示基板は、ガラス基板上
に透明薄膜電極をフオトリソグラフイの手法で所望の形
状にパターンニングして作られる。このリソグラフイの
ための装置として、マスク上に形成された原画パターン
を投影光学系を介してガラス基板上のフオトレジスト層
に露光する投影露光装置が用いられる。2. Description of the Related Art Conventionally, a liquid crystal display substrate has been widely used as a display element of a personal computer or a television receiver. This liquid crystal display substrate is manufactured by patterning a transparent thin film electrode on a glass substrate into a desired shape by a photolithographic method. As an apparatus for this lithography, a projection exposure apparatus is used which exposes an original image pattern formed on a mask onto a photoresist layer on a glass substrate via a projection optical system.

【０００３】また最近では、液晶表示基板の大面積化が
要求されており、それに伴つて投影露光装置においても
露光領域の拡大が望まれている。この露光領域の拡大の
手段として、複数の投影レンズを有する走査型露光装置
が考えられる。すなわちこの走査型露光装置において
は、光源から射出した光束をフライアイレンズ等を含む
光学系を介して光量を均一化した後、視野絞りによつて
所望の形状に整形してマスクのパターン面を照明する。Recently, there has been a demand for a larger area of the liquid crystal display substrate, and accordingly, the projection exposure apparatus is also required to expand the exposure area. As a means for enlarging the exposure area, a scanning type exposure apparatus having a plurality of projection lenses can be considered. That is, in this scanning exposure apparatus, after the light flux emitted from the light source is made uniform in the amount of light through an optical system including a fly-eye lens and the like, it is shaped into a desired shape by a field stop and the pattern surface of the mask is formed. Illuminate.

【０００４】このような構成の照明系を複数配置し、複
数の照明系のそれぞれから射出された光束でマスク上の
異なる小領域（照明領域）をそれぞれ照明する。マスク
を透過した光束は、それぞれ異なる複数の投影レンズを
介してガラス基板上の異なる投影領域にマスクのパター
ン像を結像する。そしてマスクとガラス基板とを同期さ
せて投影レンズに対して走査することによつて、マスク
上のパターン領域の全面をガラス基板上に転写する。A plurality of illumination systems having such a configuration are arranged, and different small areas (illumination areas) on the mask are illuminated by the light beams emitted from each of the plurality of illumination systems. The light flux that has passed through the mask forms a pattern image of the mask on different projection regions on the glass substrate through a plurality of different projection lenses. Then, by synchronously scanning the mask and the glass substrate with respect to the projection lens, the entire surface of the pattern area on the mask is transferred onto the glass substrate.

【０００５】[0005]

【発明が解決しようとする課題】ところで上述した構成
の走査型露光装置では、複数の投影レンズでマスクの連
続したパターンを分割してガラス基板上に、分割した像
がすき間なく、あるいは所定量だけオーバーラツプする
ように投影されるため、各投影レンズの結像特性が悪い
と分割された像がガラス基板上に連続して形成されない
という問題が生じる。By the way, in the scanning type exposure apparatus having the above-mentioned structure, the continuous pattern of the mask is divided by a plurality of projection lenses so that the divided images are not gaps or only a predetermined amount on the glass substrate. Since the images are projected so as to overlap each other, if the image forming characteristics of the respective projection lenses are poor, there arises a problem that divided images are not continuously formed on the glass substrate.

【０００６】そこで複数の投影レンズを組み立てる際
に、結像特性が最良になるよう調整するようになされて
いるが、作業が難しく時間が必要となる問題がある。ま
た１度組み立てた後も、経時変化により結像特性が変化
することもあり、実用上不十分であつた。Therefore, when assembling a plurality of projection lenses, adjustment is made so that the imaging characteristics are optimized, but there is a problem that the work is difficult and time is required. In addition, even after being assembled once, the imaging characteristics may change with time, which is not practically sufficient.

【０００７】本発明は以上の点を考慮してなされたもの
で、複数の投影光学系に対してマスク及び感光基板を同
期させて走査して、マスク上のパターン領域の全面を正
しく感光基板上に転写し得る露光装置を提案しようとす
るものである。The present invention has been made in consideration of the above points, and the mask and the photosensitive substrate are synchronously scanned with respect to a plurality of projection optical systems so that the entire surface of the pattern area on the mask is correctly exposed on the photosensitive substrate. The present invention is intended to propose an exposure device capable of transferring to the.

【０００８】[0008]

【課題を解決するための手段】かかる課題を解決するた
め本発明においては、光源からの光束をマスク（２）の
パターン領域内の複数の部分領域に照射する複数の照明
光学系（３）と、所定方向に沿い、かつその所定方向の
直交方向に互いに変位して配置され、マスク（２）を透
過した光束により複数の部分領域それぞれの像を、隣合
う像の所定方向の位置を互いに重複させて感光基板
（４）上に投影する複数の投影光学系（５〜９）と、そ
の投影光学系（５〜９）に対して、所定方向の略直交方
向（ａ）に、マスク（２）及び感光基板（４）を同期さ
せて走査する走査手段とを有し、マスク（２）と感光基
板（４）とを投影光学系（５〜９）に対して走査するこ
とにより、マスク（２）のパターン領域の全面を感光基
板（４）上に転写する露光装置（１）において、マスク
（２）面上及び感光基板面（４）上の互いに対応する位
置で、かつ複数の投影光学系（５〜９）のそれぞれに対
して共役な少なくとも２つの位置に、それぞれ配された
複数組のマスク面側基準マーク（１０）及び感光基板面
側基準マーク（１１）と、そのマスク面側基準マーク
（１０）又はその感光基板側基準マーク（１１）を、投
影光学系（５〜９）を介して、それぞれ対応する感光基
板側基準マーク（１１）又はマスク面側基準マーク（１
０）上に結像した際の位置と、感光基板側基準マーク
（１１）又はマスク面側基準マーク（１０）の位置との
ずれ量を計測するずれ量計測手段（１２〜１６）と、そ
のずれ量計測手段（１２〜１６）で計測されたずれ量に
応じて、複数の投影光学系（５〜９）の結像特性を補正
するレンズ調整手段（１７〜２１）とを設けるようにし
た。In order to solve such a problem, according to the present invention, a plurality of illumination optical systems (3) for irradiating a plurality of partial areas in a pattern area of a mask (2) with a light beam from a light source. , Which are arranged along a predetermined direction and displaced from each other in a direction orthogonal to the predetermined direction, and the images of the plurality of partial regions are overlapped with each other by the light beams transmitted through the mask (2) in the predetermined direction. A plurality of projection optical systems (5-9) for projecting onto the photosensitive substrate (4), and a mask (2) in a direction (a) substantially orthogonal to a predetermined direction with respect to the projection optical systems (5-9). ) And a scanning means for scanning the photosensitive substrate (4) in synchronization with each other, and by scanning the mask (2) and the photosensitive substrate (4) with respect to the projection optical system (5-9), the mask ( The entire surface of the pattern area of 2) is transferred onto the photosensitive substrate (4). In the optical device (1), at least two positions corresponding to each other on the mask (2) surface and the photosensitive substrate surface (4) and conjugated to each of the plurality of projection optical systems (5 to 9). A plurality of sets of the mask surface side reference mark (10) and the photosensitive substrate surface side reference mark (11), and the mask surface side reference mark (10) or the photosensitive substrate side reference mark (11), Via the projection optical system (5-9), the corresponding reference mark (11) on the photosensitive substrate side or the reference mark (1) on the mask surface side, respectively,
0) A deviation amount measuring means (12 to 16) for measuring the deviation amount between the position when the image is formed on the image surface and the position of the photosensitive substrate side reference mark (11) or the mask surface side reference mark (10), and Lens adjusting means (17 to 21) for correcting the image forming characteristics of the plurality of projection optical systems (5 to 9) according to the amount of deviation measured by the deviation amount measuring means (12 to 16) is provided. .

【０００９】また本発明においては、複数のマスク面側
基準マーク（１０）及び感光基板面側基準マーク（１
１）は、マスク（２）面上及び感光基板面（４）上に対
応した位置に保持する十分な剛性を有するブロツク（２
２）に一体に配置されるようにした。In the present invention, a plurality of mask surface side reference marks (10) and a plurality of photosensitive substrate surface side reference marks (1) are provided.
Block (1) is a block (2) having sufficient rigidity to hold the mask (2) surface and the photosensitive substrate surface (4) at corresponding positions.
It is arranged to be integrated in 2).

【００１０】また本発明においては、結像特性の補正
は、ずれ量計測手段（１２〜１６）で計測されたずれ量
に応じて、複数の投影光学系（５〜９）の投影像の歪を
それぞれ最小にする複数の補正値として、投影光学系
（５〜９）の投影倍率、投影像の回転、シフトのうち少
なくとも１つを調整する値を求め、複数のレンズ調整手
段（１７〜２１）によって投影光学系（５〜９）の結像
特性を変更することにより、複数の補正値に応じてそれ
ぞれ対応する複数の投影光学系（５〜９）の倍率、投影
像の回転、シフトのうち少なくとも１つを変化させるよ
うにした。本発明の露光方法は、マスク（２）と感光基
板（４）とを同期して走査し、マスク（２）のパタ−ン
を感光基板（４）に露光する露光方法であって、パタ−
ンの一部を感光基板（４）に重複して露光するように複
数の投影光学系（５〜９）を配置し、複数の投影光学系
（５〜９）のそれぞれに対応して、複数の投影光学系
（５〜９）に対して共役な位置にマスク側基準マーク
（１０）を配置し、マスク側基準マーク（１０）に対応
するように、複数の投影光学系（５〜９）に対して共役
な位置に感光基板側基準マーク（１１）を配置し、マス
ク側基準マーク（１０）と感光基板側基準マーク（１
１）との一方の複数の投影光学系（５〜９）を介して投
影した像と、マスク側基準マーク（１０）と感光基板側
基準マーク（１１）との他方のマークとのずれ量を計測
し、このずれ量に応じて複数の投影光学系（５〜９）の
結像特性を補正している。また、複数の投影光学系（５
〜９）の結像特性は、複数の投影光学系（５〜９）の倍
率、投影像の回転、投影像のシフトのうち少なくとも１
つを含んでいる。また、感光基板（４）はガラス基板で
ある。 Further, in the present invention, the correction of the imaging characteristics is performed by the distortion of the projected images of the plurality of projection optical systems (5-9) according to the deviation amount measured by the deviation amount measuring means (12-16). As a plurality of correction values for minimizing the respective values, a value for adjusting at least one of the projection magnification of the projection optical system (5 to 9), the rotation of the projected image, and the shift is obtained, and a plurality of lens adjusting means (17 to 21). ) By changing the image forming characteristics of the projection optical system (5 to 9), the magnification of the plurality of projection optical systems (5 to 9) respectively corresponding to the plurality of correction values, the rotation of the projection image, and the shift of the shift. At least one of them was changed. The exposure method of the present invention comprises a mask (2) and a photosensitive group.
The mask (2) pattern is scanned by synchronizing with the plate (4).
An exposure method for exposing a photosensitive substrate (4) to a pattern.
A part of the light source is overlapped on the photosensitive substrate (4) and exposed.
A plurality of projection optical systems (5 to 9) are arranged.
A plurality of projection optical systems corresponding to each of (5 to 9)
Mask side reference mark at a position conjugate with (5-9)
(10) is arranged and corresponds to the mask side reference mark (10)
To multiple projection optics (5-9)
Place the reference mark (11) on the photosensitive substrate side at
Side reference mark (10) and photosensitive substrate side reference mark (1
Projection optical system (5-9), which is one of
Shadowed image, mask side reference mark (10) and photosensitive substrate side
Measures the amount of deviation between the reference mark (11) and the other mark
However, depending on the amount of this deviation, a plurality of projection optical systems (5-9)
The image forming characteristic is corrected. In addition, a plurality of projection optical systems (5
The imaging characteristics of ~ 9) are the same as those of multiple projection optical systems (5-9).
At least one of the rate, the rotation of the projected image, and the shift of the projected image
Including one. The photosensitive substrate (4) is a glass substrate.
is there.

【００１１】[0011]

【作用】マスク（２）面上及び感光基板面（４）上の互
いに対応する位置で、かつ複数の投影光学系（５〜９）
のそれぞれに対して共役な少なくとも２つの位置に、複
数組のマスク面側基準マーク（１０）及び感光基板面側
基準マーク（１１）をそれぞれ配し、それぞれを投影光
学系（５〜９）を介して対応する感光基板側基準マーク
（１１）又はマスク面側基準マーク（１０）上に結像し
た際の位置と、感光基板側基準マーク（１１）又はマス
ク面側基準マーク（１０）の位置とのずれ量を計測し、
そのずれ量に応じて複数の投影光学系（５〜９）の結像
特性を補正するようにしたことにより、実際に投影して
得られるずれ量を直接計測して複数の投影光学系（５〜
９）の結像特性を適正に補正し得る。A plurality of projection optical systems (5-9) at positions corresponding to each other on the mask (2) surface and the photosensitive substrate surface (4).
A plurality of sets of the mask surface side reference mark (10) and the photosensitive substrate surface side reference mark (11) are arranged at at least two positions which are respectively conjugate with each other, and each of them is provided with a projection optical system (5-9). Position when the image is formed on the corresponding reference mark (11) on the photosensitive substrate side or the reference mark (10) on the mask surface side through the position of the reference mark (11) on the photosensitive substrate side or the reference mark (10) on the mask surface side Measure the amount of deviation from
By correcting the image forming characteristics of the plurality of projection optical systems (5 to 9) according to the deviation amount, the deviation amount obtained by actual projection is directly measured and the plurality of projection optical systems (5 ~
It is possible to properly correct the imaging characteristic of 9).

【００１２】またマスク面側基準マーク（１０）と感光
基板面側基準マーク（１１）を十分な剛性を有するブロ
ツク（２２）に一体に配置するようにしたことにより、
マークの位置関係を常に一定に保つことができ、環境の
変化等により投影光学系（５〜９）に経時的な変化が生
じても再び最良な補正を行なうことができる。Further, by arranging the mask surface side reference mark (10) and the photosensitive substrate surface side reference mark (11) integrally with the block (22) having sufficient rigidity,
The positional relationship of the marks can always be kept constant, and the best correction can be performed again even if the projection optical system (5 to 9) changes with time due to changes in the environment.

【００１３】[0013]

【実施例】以下図面について、本発明の一実施例を詳述
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

【００１４】図１において、１は全体として正立正像で
拡大倍率１倍の走査型露光装置を示す。この露光装置１
はマスク２上に光束を照射する照明系３、マスク２上の
パターンを感光基板（ガラス基板）４上に投影する投影
レンズ５〜９から構成され、照明系３及び投影レンズ５
〜９に対して、マスク２及び感光基板４を同期させて矢
印ａ方向に走査することにより、マスク２上のパターン
領域の全面を感光基板４上に転写し得るようになされて
いる。またこの露光装置１では、投影レンズ５〜９を通
じて感光基板４上に投影されたパターンの投影位置を計
測するため、それぞれ対応する位置に計測器１２〜１６
が配置されている。In FIG. 1, reference numeral 1 designates a scanning type exposure apparatus which is an erect image as a whole and which has a magnification of 1 ×. This exposure apparatus 1
Is composed of an illumination system 3 for irradiating a light flux onto the mask 2 and projection lenses 5 to 9 for projecting a pattern on the mask 2 onto a photosensitive substrate (glass substrate) 4. The illumination system 3 and the projection lens 5
9 to 9, the mask 2 and the photosensitive substrate 4 are synchronously scanned in the direction of the arrow a so that the entire surface of the pattern region on the mask 2 can be transferred onto the photosensitive substrate 4. Further, in this exposure apparatus 1, since the projection position of the pattern projected on the photosensitive substrate 4 through the projection lenses 5 to 9 is measured, the measuring devices 12 to 16 are located at the corresponding positions.
Are arranged.

【００１５】投影レンズ５〜９には、計測器１２〜１６
で計測された各像のずれ量をそれぞれ調整するため、各
投影レンズ５〜９の結像特性を調整するレンズ調整機構
１７〜２１を有している。また照明系３、投影レンズ
５、計測器１２は一直線上に（光軸に沿つて）配置さ
れ、照明光学系３、投影レンズ６〜９と計測器１３〜１
６もそれぞれ同様に配置される。このとき投影レンズ５
〜９は、投影レンズ５、６、７と投影レンズ８、９の２
列に配列され、かつ隣接するパターンの露光像（投影レ
ンズ５と８、８と６等の投影像どうし）が所定量（例え
ば５〔mm〕）オーバーラツプするように千鳥状に配置さ
れる。このためマスク２上のパターンは投影レンズ５〜
９によつて分割され、感光基板４上に１：１で結像され
る。The projection lenses 5-9 include measuring instruments 12-16.
The lens adjusting mechanisms 17 to 21 are provided to adjust the image forming characteristics of the respective projection lenses 5 to 9 in order to adjust the amount of deviation of each image measured in (4). The illumination system 3, the projection lens 5, and the measuring instrument 12 are arranged on a straight line (along the optical axis), and the illumination optical system 3, the projection lenses 6 to 9 and the measuring instruments 13 to 1 are arranged.
6 are similarly arranged. At this time, the projection lens 5
2 to 9 are the projection lenses 5, 6, and 7 and the projection lenses 8 and 9.
The exposure images of adjacent patterns arranged in rows (projection images of the projection lenses 5 and 8, 8 and 6 and the like) are arranged in a staggered manner so as to overlap by a predetermined amount (for example, 5 [mm]). Therefore, the pattern on the mask 2 is the projection lens 5-5.
It is divided by 9 and imaged on the photosensitive substrate 4 in a ratio of 1: 1.

【００１６】マスク２と感光基板４の走査方向の片側に
は、マスク２と同一面上に配されたマスク側基準マーク
１０及び感光基板４と同一面上に配された感光基板側基
準マーク１１をそれぞれ有するコ字形状のブロツク２２
が配設され、マスク２及び感光基板４と共に走査露光用
のステージ（図示せず）上に配設される。この露光装置
１では、マスク側基準マーク１０及び感光基板側基準マ
ーク１１を用いて、投影レンズ５〜９の結像特性（例え
ばデイストーシヨン）を計測し得るようになされてい
る。On one side of the mask 2 and the photosensitive substrate 4 in the scanning direction, a mask side reference mark 10 arranged on the same surface as the mask 2 and a photosensitive substrate side reference mark 11 arranged on the same surface as the photosensitive substrate 4. U-shaped block 22 each having
Is provided on the scanning exposure stage (not shown) together with the mask 2 and the photosensitive substrate 4. In the exposure apparatus 1, the image forming characteristics (for example, distortion) of the projection lenses 5 to 9 can be measured by using the mask side reference mark 10 and the photosensitive substrate side reference mark 11.

【００１７】実際上マスク側基準マーク１０と感光基板
側基準マーク１１とには、図２（Ａ）及び図２（Ｂ）に
示すように、それぞれ対をなすようにマーク１０Ai〜１
０Ei、１１Ai〜１１Eiが形成され、さらにそれぞれ１つ
の投影レンズ５〜９の露光領域５Ａ、５Ｂ〜９Ａ、９Ｂ
内に２つのマーク１０A1、１０A2、〜１０E1、１０E2、
１１A1、１１A2、〜１１E1、１１E2が入るように形成さ
れている。As a matter of fact, the mask side reference mark 10 and the photosensitive substrate side reference mark 11 are formed as a pair of marks 10 Ai to 1 as shown in FIGS. 2 (A) and 2 (B).
0 Ei , 11 Ai to 11 Ei are formed, and the exposure areas 5A, 5B to 9A, 9B of one projection lens 5 to 9 are formed.
Two marks 10 A1 , 10 A2 , -10 E1 , 10 E2 ,
11 A1 , 11 A2 , to 11 E1 , 11 E2 are formed.

【００１８】対になるマスク側基準マーク１０と感光基
板側基準マーク１１の間で発生する製造誤差は極力小さ
くなるようにする。例えばクローム（Ｃｒ）成膜したガ
ラス材にレジストを塗布し、ステツパ等の高精度露光装
置でマークを露光し、エツチングによりクローム（Ｃ
ｒ）のマーク１０Ai〜１０Ei、１１Ai〜１１Eiを得る。
このようにすればそれぞれマスク側基準マーク１０と感
光基板側基準マーク１１間の製造誤差は、露光装置内で
位置を管理するレーザ干渉計等の測定手段と同レベルの
精度が得られる。なお投影レンズ５〜９が、理想的な結
像特性を持つている場合、マスク側基準マーク１０のそ
れぞれの投影像の位置は感光基板側基準マーク１１のそ
れぞれに一致する。The manufacturing error generated between the mask side reference mark 10 and the photosensitive substrate side reference mark 11 forming a pair is made as small as possible. For example, a resist is applied to a glass material on which a chrome (Cr) film is formed, the mark is exposed by a high precision exposure device such as a stepper, and the chrome (C) is formed by etching.
r) marks 10 Ai to 10 Ei and 11 Ai to 11 Ei are obtained.
In this way, the manufacturing error between the mask-side reference mark 10 and the photosensitive-substrate-side reference mark 11 can be obtained with the same level of accuracy as that of the measuring means such as a laser interferometer that controls the position in the exposure apparatus. When the projection lenses 5 to 9 have ideal image forming characteristics, the positions of the respective projected images of the mask side reference mark 10 coincide with the respective photosensitive substrate side reference marks 11.

【００１９】以上の構成において、投影レンズ５〜９の
結像特性を計測する場合、まずマスク２及び感光基板４
と共にブロツク２２を矢印ａ方向に移動し、図３に示す
ように、投影レンズ５〜９の入射側と出射側とに、それ
ぞれマスク側基準マーク１０と感光基板側基準マーク１
１とが入るようにする。このようにすると、照明系３に
より照らされたマスク側基準マーク１０が、投影レンズ
５〜９によつて感光基板側基準マーク１１上に結像され
る。このようにして、図４（Ａ）に示すように得られる
マスク側基準マーク１０の投影像と感光基板側基準マー
ク１１との間の距離（ずれ量）を、計測器１２〜１６に
より計測する。In the above structure, when measuring the image forming characteristics of the projection lenses 5 to 9, first, the mask 2 and the photosensitive substrate 4 are used.
At the same time, the block 22 is moved in the direction of arrow a, and as shown in FIG. 3, the mask side reference mark 10 and the photosensitive substrate side reference mark 1 are respectively provided on the incident side and the emitting side of the projection lenses 5 to 9.
Make sure that 1 and By doing so, the mask side reference mark 10 illuminated by the illumination system 3 is imaged on the photosensitive substrate side reference mark 11 by the projection lenses 5 to 9. In this way, the distance (deviation amount) between the projected image of the mask side reference mark 10 and the photosensitive substrate side reference mark 11 obtained as shown in FIG. 4A is measured by the measuring instruments 12 to 16. .

【００２０】計測器１２〜１６には、例えばＴＶカメラ
等を適当な倍率になるような結像光学系を介して配置す
る。このようにすればＴＶカメラの画素ピツチと光学系
の倍率から、容易にマスク側基準マーク１０の投影像と
感光基板側基準マーク１１間とのずれ量を算出できる。
計測は図４（Ｂ）に示すように、１つの投影レンズ９の
露光領域９ＡＢ内の２つ以上のマーク１０E1、１０E2、
１１E1、１１E2について、感光基板側基準マーク１
０E1、１０E2の投影像に対するマスク側基準マーク１１
E1、１１E2のずれ量Δｘ1 、Δｙ1 、Δｘ2 、Δｙ2 、
……、Δｘn 、Δｙn を計測する（ｎは、マークがｎ個
の場合）。For example, a TV camera or the like is arranged in each of the measuring instruments 12 to 16 via an image forming optical system which provides an appropriate magnification. In this way, the amount of deviation between the projected image of the mask side reference mark 10 and the photosensitive substrate side reference mark 11 can be easily calculated from the pixel pitch of the TV camera and the magnification of the optical system.
As shown in FIG. 4 (B), the measurement is performed with two or more marks 10 E1 , 10 E2 in the exposure area 9AB of one projection lens 9,
Regarding 11 E1 and 11 E2 , reference mark 1 on the photosensitive substrate side
Mask side reference mark 11 for 0 E1 and 10 E2 projected images
E1 , 11 E2 deviation amounts Δx 1 , Δy 1 , Δx 2 , Δy 2 ,
......, Δx n and Δy n are measured (n is the case where there are n marks).

【００２１】ここでは最も簡単なマークが２つの場合に
ついて説明する。投影レンズ９の並び方向をｙ、マスク
２及び感光基板４の走査方向（矢印ａ）をｘとする。マ
ークはｙ方向に距離Ｌだけ離れて２つ形成されている。
１つ目のマーク１０E2、１１E2のずれ量はΔｘ1 、Δｙ
1 とする。また２つ目のマーク１０E1、１１E1のずれ量
はΔｘ2 、Δｙ2 とする。ここで計測されたずれ量は主
として投影レンズ９のデイストーシヨンによる誤差と考
えられ、投影レンズ９の補正値を演算装置により次式Here, the case where the simplest marks are two will be described. It is assumed that the arrangement direction of the projection lenses 9 is y and the scanning direction (arrow a) of the mask 2 and the photosensitive substrate 4 is x. Two marks are formed at a distance L in the y direction.
The deviations of the first marks 10 E2 and 11 E2 are Δx 1 and Δy.
Set to 1 . Further, the deviation amounts of the second marks 10 E1 and 11 E1 are Δx 2 and Δy 2 . The deviation amount measured here is considered to be an error mainly due to the distortion of the projection lens 9, and the correction value of the projection lens 9 is calculated by

【数１】 [Equation 1]

【数２】 [Equation 2]

【数３】 [Equation 3]

【数４】 のようにして求める。なお像の回転（Ｒｏｔ）は図４
（Ｂ）に示すように、ｘ軸方向からｙ軸方向への回転を
正の値で表わす。[Equation 4] To ask. The image rotation (Rot) is shown in FIG.
As shown in (B), the rotation from the x-axis direction to the y-axis direction is represented by a positive value.

【００２２】ここで（１）式のＭａｇは投影像の倍率補
正値であり、（２）式のＲｏｔは回転補正値であり、
（３）式及び（４）式のshift ｘ及びshift ｙはそれぞ
れ像シフトの補正値である。全ての投影レンズ５〜９に
ついて同様にして補正値を求める。このようにして得ら
れた補正値は、レンズ調整機構１７〜２１に送られ、各
投影レンズ５〜９の倍率（Ｍａｇ）、像の回転（Ｒｏ
ｔ）、像シフト（shift ｘ、shift ｙ）のうち少なくと
も１つが、このようにして投影レンズ５〜９の結像特性
を補正し得るようになされている。Here, Mag in the equation (1) is a magnification correction value of the projected image, Rot in the equation (2) is a rotation correction value,
The shift x and shift y in equations (3) and (4) are correction values for image shift, respectively. Correction values are similarly obtained for all the projection lenses 5 to 9. The correction values thus obtained are sent to the lens adjusting mechanisms 17 to 21, and the magnification (Mag) of each projection lens 5 to 9 and the image rotation (Ro).
t) and at least one of the image shifts (shift x, shift y) can correct the image forming characteristics of the projection lenses 5 to 9 in this way.

【００２３】以上の構成によれば、マスク面に設置した
マスク側基準マーク１０を対応する投影レンズ５〜９を
通じて、感光基板面に設置した感光基板側基準マーク１
１上に結像し、マスク側基準マーク１０の投影像と感光
基板側基準マーク１１間のずれ量を直接計測し、それぞ
れのずれ量が最小になるようにそれぞれの投影レンズ５
〜９を調整して最適化することにより、各投影レンズ５
〜９の結像特性を適正に補正し得、実際の露光時に発生
する投影像の誤差を最小に抑えることができる。かくす
るにつき、複数の投影レンズ５〜９に対してマスク２及
び感光基板４を同期させて走査して、マスク２上のパタ
ーン領域の全面を正しく感光基板４上に転写し得る。According to the above structure, the mask side reference mark 10 installed on the mask surface is passed through the corresponding projection lenses 5 to 9 and the photosensitive substrate side reference mark 1 installed on the photosensitive substrate surface.
1 and directly measures the deviation amount between the projected image of the mask-side reference mark 10 and the photosensitive substrate-side reference mark 11, and the respective projection lenses 5 so that the respective deviation amounts are minimized.
By adjusting and optimizing 9 to 9, each projection lens 5
It is possible to properly correct the imaging characteristics of 9 to 9 and to minimize the error in the projected image that occurs during actual exposure. In this way, the mask 2 and the photosensitive substrate 4 can be synchronously scanned with respect to the plurality of projection lenses 5 to 9 so that the entire surface of the pattern area on the mask 2 can be correctly transferred onto the photosensitive substrate 4.

【００２４】また上述の構成によれば、マスク側基準マ
ーク１０及び感光基板側基準マーク１１は、剛性の高い
ブロツク２２に取り付けられ、常に露光装置１内に設置
されているので、必要に応じて随時計測を行なうことが
でき、経時的な変化が生じて結像特性が変わつても常に
ずれ量を最小にするように投影レンズ５〜９を調整する
ことが可能となる。Further, according to the above configuration, the mask side reference mark 10 and the photosensitive substrate side reference mark 11 are attached to the block 22 having high rigidity and are always installed in the exposure apparatus 1. It is possible to perform measurement at any time, and it is possible to adjust the projection lenses 5 to 9 so that the deviation amount is always minimized even if the imaging characteristics change with the lapse of time.

【００２５】なお上述の実施例においては、投影レンズ
５〜９にそれぞれ対応するように計測器１２〜１６を配
置した場合について述べたが、これに限らず、図５に示
すように、計測器２３を１つだけ配置して移動機構によ
つて、各投影レンズ５〜９の下で位置決めするようにし
ても良い。In the above-mentioned embodiment, the case where the measuring instruments 12 to 16 are arranged so as to correspond to the projection lenses 5 to 9 has been described, but the present invention is not limited to this, and as shown in FIG. It is also possible to arrange only one 23 and position it under each of the projection lenses 5 to 9 by the moving mechanism.

【００２６】また上述の実施例においては、感光基板面
に対して複数の計測器１２〜１６を、投影レンズ５〜９
の反対側に配置した場合について述べたが、これに代
え、図６に示すように、図５と同様に移動機構を有する
計測器２４を１つだけマスク面と照明系３の間に設置し
ても良い。この場合感光基板側基準マーク１１が投影レ
ンズ５〜９によりマスク側基準マーク１０上に像をつく
る。このときの感光基板側基準マーク１１の像とマスク
側基準マーク１０のずれ量を計測することにより、上述
の実施例と同様に補正値を求めることができる。Further, in the above-mentioned embodiment, a plurality of measuring instruments 12 to 16 are provided on the surface of the photosensitive substrate and projection lenses 5 to 9 are provided.
However, instead of this, as shown in FIG. 6, only one measuring device 24 having a moving mechanism is installed between the mask surface and the illumination system 3 as shown in FIG. May be. In this case, the photosensitive substrate side reference mark 11 forms an image on the mask side reference mark 10 by the projection lenses 5 to 9. By measuring the deviation amount between the image of the photosensitive substrate side reference mark 11 and the mask side reference mark 10 at this time, the correction value can be obtained as in the above-described embodiment.

【００２７】因に、この場合投影レンズ５〜９の結像特
性は、感光基板側基準マーク１１の像に作用しているた
め、得られる補正値の符号は逆になる。また計測器２４
は、図６（Ｂ）に示すように、ハーフミラー２５、結像
レンズ２６、ＣＣＤカメラ２７で構成でき、必要に応じ
て各投影レンズ５〜９上で位置決めする。In this case, since the image forming characteristics of the projection lenses 5 to 9 act on the image of the reference mark 11 on the photosensitive substrate side, the signs of the obtained correction values are opposite. In addition, the measuring instrument 24
As shown in FIG. 6B, can be composed of a half mirror 25, an imaging lens 26, and a CCD camera 27, and is positioned on each projection lens 5 to 9 as necessary.

【００２８】さらに上述の実施例においては、本発明を
投影レンズが５本並んだ走査型露光装置に適用した場合
について述べたが、投影レンズの本数は何本でも良く、
また投影レンズとしてマスク面の像が感光基板面上に結
像すれば良いので、反射ミラーを使用した投影光学系で
も良い。また投影光学系は縮小又は拡大系でも上述の実
施例と同様の効果を実現できる。Further, in the above-mentioned embodiments, the case where the present invention is applied to the scanning type exposure apparatus in which five projection lenses are arranged is described, but the number of projection lenses may be any number,
Further, since the image of the mask surface may be formed on the surface of the photosensitive substrate as a projection lens, a projection optical system using a reflection mirror may be used. Further, even if the projection optical system is a reduction or enlargement system, the same effect as that of the above-described embodiment can be realized.

【００２９】[0029]

【発明の効果】上述のように本発明によれば、マスク面
上及び感光基板面上の互いに対応する位置で、かつ複数
の投影光学系のそれぞれに対して共役な少なくとも２つ
の位置に、複数組のマスク面側基準マーク及び感光基板
面側基準マークをそれぞれ配し、投影光学系を介して対
応する感光基板側基準マーク又はマスク面側基準マーク
上に結像した際の位置と、感光基板側基準マーク又はマ
スク面側基準マークの位置とのずれ量を計測し、そのず
れ量に応じて複数の投影光学系の結像特性を補正するよ
うにしたことにより、実際に投影して得られるずれ量を
直接計測して投影光学系を最適化することができ、投影
光学系の結像特性を適正に補正し得る露光装置を実現で
きる。As described above, according to the present invention, a plurality of masks are provided at positions corresponding to each other on the mask surface and the photosensitive substrate surface, and at at least two positions conjugate with each of the plurality of projection optical systems. A mask surface side reference mark and a photosensitive substrate surface side reference mark are arranged respectively, and a position when an image is formed on the corresponding photosensitive substrate side reference mark or mask surface side reference mark through the projection optical system, and the photosensitive substrate. The amount of deviation from the position of the side reference mark or the mask surface side reference mark is measured, and the imaging characteristics of the plurality of projection optical systems are corrected according to the amount of deviation, so that the actual projection is obtained. It is possible to optimize the projection optical system by directly measuring the amount of deviation, and it is possible to realize an exposure apparatus that can appropriately correct the imaging characteristics of the projection optical system.

【００３０】またマスク面側基準マークと感光基板面側
基準マークを十分な剛性を有するブロックに一体に配置
するようにしたことにより、マークの位置関係を常に一
定に保つことができ、環境の変化等により投影光学系に
経時的な変化が生じても再び最良に補正し得る露光装置
を実現できる。かくするにつき、複数の投影光学系に対
してマスク及び感光基板を同期させて走査して、マスク
上のパタ−ン領域の全面を正しく感光基板上に転写し得
る露光装置を実現できる。また、本発明の露光方法は、
マスク側基準マークと感光基板側基準マークとの一方の
複数の投影光学系を介して投影した像と、マスク側基準
マークと感光基板側基準マークとの他方のマークとのず
れ量に応じて複数の投影光学系の結像特性を補正してい
るので、複数の投影光学系の結像特性を適正に補正する
ことができる。 Further, by arranging the mask surface side reference mark and the photosensitive substrate surface side reference mark integrally in a block having sufficient rigidity, the positional relationship of the marks can be always kept constant, and the environmental change As a result, it is possible to realize an exposure apparatus capable of performing the best correction again even if the projection optical system changes with time. In this way, it is possible to realize an exposure apparatus that can scan the mask and the photosensitive substrate in synchronization with a plurality of projection optical systems and correctly transfer the entire pattern area on the mask onto the photosensitive substrate. Further, the exposure method of the present invention,
One of the mask side reference mark and the photosensitive substrate side reference mark
Images projected through multiple projection optical systems and mask-side reference
The mark and the reference mark on the photosensitive board side
The imaging characteristics of multiple projection optical systems are corrected according to the amount
Therefore, the imaging characteristics of multiple projection optical systems are properly corrected.
be able to.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による走査型露光装置の一実施例を示す
略線的斜視図である。FIG. 1 is a schematic perspective view showing an embodiment of a scanning exposure apparatus according to the present invention.

【図２】マスク側基準マークと感光基板側基準マークの
マーク構成の説明に供する略線図である。FIG. 2 is a schematic diagram used to describe a mark configuration of a mask side reference mark and a photosensitive substrate side reference mark.

【図３】マスク側基準マークと感光基板側基準マーク間
の誤差の計測の説明に供する略線図である。FIG. 3 is a schematic diagram for explaining measurement of an error between a mask side reference mark and a photosensitive substrate side reference mark.

【図４】マスク側基準マークと感光基板側基準マーク間
の誤差の計測の説明に供する略線図である。FIG. 4 is a schematic diagram for explaining measurement of an error between a mask side reference mark and a photosensitive substrate side reference mark.

【図５】本発明による走査型露光装置の他の実施例を示
す略線的斜視図である。FIG. 5 is a schematic perspective view showing another embodiment of the scanning exposure apparatus according to the present invention.

【図６】本発明による走査型露光装置の他の実施例を示
す略線的斜視図である。FIG. 6 is a schematic perspective view showing another embodiment of the scanning exposure apparatus according to the present invention.

【符号の説明】[Explanation of symbols]

１……露光装置、２……マスク、３……照明系、４……
感光基板、５〜９……投影レンズ、１０……マスク側基
準マーク、１１……感光基板側基準マーク、１２〜１
６、２３、２４……計測器、１７〜２１……レンズ調整
機構、２２……ブロツク、２５……ハーフミラー、２６
……結像レンズ、２７……ＣＣＤカメラ。1 ... exposure device, 2 ... mask, 3 ... illumination system, 4 ...
Photosensitive substrate, 5 to 9 ... Projection lens, 10 ... Mask side reference mark, 11 ... Photosensitive substrate side reference mark, 12 to 1
6, 23, 24 ... Measuring instrument, 17-21 ... Lens adjustment mechanism, 22 ... Block, 25 ... Half mirror, 26
…… Imaging lens, 27 …… CCD camera.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−335211（ＪＰ，Ａ) 特開 平２−27712（ＪＰ，Ａ) 特開 平５−343293（ＪＰ，Ａ) 特開 昭60−109228（ＪＰ，Ａ) 特開 平４−307720（ＪＰ，Ａ) 特開 平１−114033（ＪＰ，Ａ) 特開 昭64−59814（ＪＰ，Ａ) 実開 平５−81841（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 G03F 7/20 521 ─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-5-335211 (JP, A) JP-A-2-27712 (JP, A) JP-A-5-343293 (JP, A) JP-A-60- 109228 (JP, A) JP 4-307720 (JP, A) JP 1-114033 (JP, A) JP 64-59814 (JP, A) Fukui 5-81841 (JP, U) (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/027 G03F 7/20 521

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 光源の光束をマスクのパタ−ン領域内の
複数の部分領域に照射する複数の照明光学系と、所定方
向に沿い、かつ該所定方向の直交方向に互いに変位して
配置され、前記マスクを透過した前記光束により前記複
数の部分領域それぞれの像を、隣合う前記像の前記所定
方向の位置を互いに重複させて感光基板上に投影する複
数の投影光学系と、該投影光学系に対して、前記所定方
向の略直交方向に、前記マスク及び前記感光基板を同期
させて走査する走査手段とを有し、前記マスクと前記感
光基板とを前記投影光学系に対して走査することにより
前記マスクの前記パタ−ン領域の全面を前記感光基板上
に転写する露光装置において、 前記マスク面上及び前記感光基板面上の互いに対応する
位置で、かつ前記複数の投影光学系のそれぞれに対して
共役な少なくとも２つの位置に、それぞれ配された複数
組のマスク面側基準マーク及び感光基板面側基準マーク
と、 該マスク面側基準マーク又は該感光基板面側基準マーク
を、前記投影光学系を介して、それぞれ対応する前記感
光基板面側基準マーク又は前記マスク面側基準マーク上
に結像した際の位置と、前記感光基板面側基準マーク又
は前記マスク面側基準マークの位置とのずれ量を計測す
るずれ量計測手段と、 該ずれ量計測手段で計測されたずれ量に応じて、前記複
数の投影光学系の結像特性を補正するレンズ調整手段と
を具えることを特徴とする露光装置。1. A plurality of illumination optical systems for irradiating a plurality of partial areas in a pattern area of a mask with a light beam of a light source, and a plurality of illumination optical systems arranged along a predetermined direction and displaced from each other in a direction orthogonal to the predetermined direction. A plurality of projection optical systems that project the images of each of the plurality of partial areas by the light flux that has passed through the mask onto a photosensitive substrate such that the positions of adjacent images in the predetermined direction overlap each other; Scanning means for synchronizing and scanning the mask and the photosensitive substrate in a direction substantially orthogonal to the predetermined system with respect to the system, and scanning the mask and the photosensitive substrate with respect to the projection optical system. In the exposure device for transferring the entire surface of the pattern area of the mask onto the photosensitive substrate, the positions of the plurality of projection optical systems at positions corresponding to each other on the mask surface and the photosensitive substrate surface. A plurality of sets of the mask surface side reference mark and the photosensitive substrate surface side reference mark, which are respectively arranged at at least two positions which are conjugate to each other, the mask surface side reference mark or the photosensitive substrate surface side reference mark, Positions when imaged on the corresponding photosensitive substrate surface side reference marks or mask surface side reference marks via the projection optical system, and positions of the photosensitive substrate surface side reference marks or the mask surface side reference marks, respectively. And a lens adjustment unit that corrects the image forming characteristics of the plurality of projection optical systems according to the deviation amount measured by the deviation amount measuring unit. Characteristic exposure equipment. 【請求項２】 前記複数のマスク面側基準マーク及び前
記感光基板面側基準マークは、前記マスク面上及び前記
感光基板面上に対応した位置に保持する十分な剛性を有
するブロックに一体的に配置されることを特徴とする請
求項１に記載の露光装置。2. The plurality of mask surface side reference marks and the photosensitive substrate surface side reference marks are integrally formed in a block having sufficient rigidity to hold the mask surface and the photosensitive substrate surface at corresponding positions. The exposure apparatus according to claim 1, wherein the exposure apparatus is arranged. 【請求項３】 前記結像特性の補正は、前記ずれ量計測
手段で計測されたずれ量に応じて、前記複数の投影光学
系の投影像の歪をそれぞれ最小にする複数の補正値とし
て、前記投影光学系の投影倍率、前記投影像の回転、シ
フトのうち少なくとも１つを調整する値を求め、 前記複数のレンズ調整手段によって前記投影光学系の結
像特性を変更することにより、前記複数の補正値に応じ
てそれぞれ対応する前記複数の投影光学系の倍率、前記
投影像の回転、シフトのうち少なくとも１つを変化させ
るようにしたことを特徴とする請求項１に記載の露光装
置。3. The correction of the image formation characteristic is performed by a plurality of correction values that minimize distortions of projected images of the plurality of projection optical systems according to the deviation amount measured by the deviation amount measuring means. By obtaining a value for adjusting at least one of the projection magnification of the projection optical system, the rotation and shift of the projection image, and changing the image forming characteristics of the projection optical system by the plurality of lens adjusting means, The exposure apparatus according to claim 1, wherein at least one of a magnification, a rotation, and a shift of the plurality of projection optical systems corresponding to each of the correction values is changed. 【請求項４】 マスクと感光基板とを同期して走査し、4. The mask and the photosensitive substrate are synchronously scanned,
前記マスクのパタ−ンを前記感光基板に露光する露光方Exposure method for exposing the pattern of the mask onto the photosensitive substrate
法において、In law, 前記パタ−ンの一部を前記感光基板に重複して露光するPart of the pattern is exposed on the photosensitive substrate in an overlapping manner.
ように複数の投影光学系を配置し、Arrange multiple projection optical systems, 前記複数の投影光学系のそれぞれに対応して、前記複数The plurality of projection optical systems are respectively provided in correspondence with the plurality of projection optical systems.
の投影光学系に対して共役な位置にマスク側基準マークMask side reference mark at a position conjugate with the projection optical system
を配置し、Place 前記マスク側基準マークに対応するように、前記複数のIn order to correspond to the mask-side reference mark, the plurality of
投影光学系に対して共役な位置に感光基板側基準マークReference mark on the photosensitive substrate side at a position conjugate with the projection optical system
を配置し、Place 前記マスク側基準マークと前記感光基板側基準マークとThe mask side reference mark and the photosensitive substrate side reference mark
の一方の前記複数の投影光学系を介して投影した像と、An image projected through one of the plurality of projection optical systems,
前記マスク側基準マークと前記感光基板側基準マークとThe mask side reference mark and the photosensitive substrate side reference mark
の他方のマークとのずれ量を計測し、Measure the amount of deviation from the other mark of 前記ずれ量に応じて前記複数の投影光学系の結像特性をThe image forming characteristics of the plurality of projection optical systems are changed according to the deviation amount.
補正することを特徴とする露光方法。An exposure method characterized by correction. 【請求項５】 前記複数の投影光学系の結像特性は、前5. The image forming characteristics of the plurality of projection optical systems are
記複数の投影光学系の倍率、投影像の回転、投影像のシNote: Magnification of multiple projection optical systems, rotation of projected images,
フトのうち少なくとも１つを含んでいることを特徴とすCharacterized by including at least one of
る請求項４記載の露光方法。The exposure method according to claim 4. 【請求項６】 前記感光基板はガラス基板であることを6. The photosensitive substrate is a glass substrate
特徴とする請求項４または５記載の露光方法。The exposure method according to claim 4 or 5, characterized in that
JP21531194A 1994-08-16 1994-08-16 Exposure apparatus and exposure method Expired - Lifetime JP3460129B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP21531194A JP3460129B2 (en) 1994-08-16 1994-08-16 Exposure apparatus and exposure method
US08/515,783 US5617211A (en) 1994-08-16 1995-08-16 Exposure apparatus
KR1019950025127A KR100381629B1 (en) 1994-08-16 1995-08-16 Exposure device

Applications Claiming Priority (1)

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JP21531194A JP3460129B2 (en) 1994-08-16 1994-08-16 Exposure apparatus and exposure method

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JP3460129B2 true JP3460129B2 (en) 2003-10-27

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US5999244A (en) * 1995-11-07 1999-12-07 Nikon Corporation Projection exposure apparatus, method for correcting positional discrepancy of projected image, and method for determining image formation characteristic of projection optical system
JP3791037B2 (en) * 1996-02-28 2006-06-28 株式会社ニコン Exposure equipment
JP4649717B2 (en) * 1999-10-01 2011-03-16 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
JP2001305745A (en) * 2000-04-24 2001-11-02 Nikon Corp Scanning exposure system and scanning type exposure device
JP2001337462A (en) * 2000-05-26 2001-12-07 Nikon Corp Exposure device, method for manufacturing exposure device and method for manufacturing microdevice
JP2006330534A (en) * 2005-05-30 2006-12-07 Nikon Corp Reference index plate, method for adjusting reference index plate, exposing device and method for manufacturing micro device
US20070115452A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Method of measuring the magnification of a projection system, device manufacturing method and computer program product
JP5760292B2 (en) * 2011-02-28 2015-08-05 株式会社ブイ・テクノロジー Exposure system using microlens array
JP5747305B2 (en) * 2011-03-02 2015-07-15 株式会社ブイ・テクノロジー Exposure apparatus and microlens array structure
JP5760293B2 (en) * 2011-03-02 2015-08-05 株式会社ブイ・テクノロジー Exposure equipment

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