JP4642019B2 - 不揮発性半導体メモリ、半導体装置及びチャージポンプ回路 - Google Patents
不揮発性半導体メモリ、半導体装置及びチャージポンプ回路 Download PDFInfo
- Publication number
- JP4642019B2 JP4642019B2 JP2006512888A JP2006512888A JP4642019B2 JP 4642019 B2 JP4642019 B2 JP 4642019B2 JP 2006512888 A JP2006512888 A JP 2006512888A JP 2006512888 A JP2006512888 A JP 2006512888A JP 4642019 B2 JP4642019 B2 JP 4642019B2
- Authority
- JP
- Japan
- Prior art keywords
- timing
- voltage
- semiconductor memory
- pump
- nonvolatile semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 230000015654 memory Effects 0.000 claims description 40
- 239000003990 capacitor Substances 0.000 claims description 28
- 230000004044 response Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 14
- JZSMZIOJUHECHW-GTJZZHROSA-N 2-hydroxypropyl (z,12r)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCC[C@@H](O)C\C=C/CCCCCCCC(=O)OCC(C)O JZSMZIOJUHECHW-GTJZZHROSA-N 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 238000012795 verification Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
Description
Claims (8)
- 第1のタイミングで動作を開始して第1の電圧を生成する第1のチャージポンプと、
前記第1のタイミングに続く第2のタイミングで動作を開始して、不揮発性半導体メモリセルに接続された所定ノードに第2の電圧を印加する第2のチャージポンプと、
一端が前記所定ノードに接続されたキャパシタを含み、前記第2のタイミングで前記第1の電圧を用いて前記所定ノードをブーストするブースタと
を有する不揮発性半導体メモリ。 - 前記第1のタイミングから前記第2のタイミングまでの期間は前記不揮発性半導体メモリセルのプログラムベリファイを行う期間であり、前記第2のタイミングで始まる期間は前記不揮発性半導体メモリセルをプログラムする期間である請求項1記載の不揮発性半導体メモリ。
- 前記ブースタは、前記第1のタイミングから前記第2のタイミングまでの期間に前記第1の電圧を前記所定ノードに印加する第1の回路と、前記第2のタイミングから所定の期間だけ前記第1の電圧に応じた電圧を前記キャパシタの他端に印加する第2の回路とを有する請求項1又は2記載の不揮発性半導体メモリ。
- 前記キャパシタは、前記不揮発性半導体メモリの読出し時に該不揮発性半導体メモリのゲートに印加される読出し電圧を生成するキャパシタと共用されている請求項3記載の不揮発性半導体メモリ。
- 前記第2のチャージポンプは複数のブースト段を有し、前記第1のタイミングから前記第2のタイミングまでの期間、ブースト段間の内部ノードを前記第1の電圧でプリチャージする請求項1から4のいずれか一項記載の不揮発性半導体メモリ。
- 前記第2のチャージポンプは、前記第1のタイミングから前記第2のタイミングまでの期間を示す信号に応答して前記第1の電圧を前記内部ノードに印加するトランジスタを含む請求項5記載の不揮発性半導体メモリ。
- 前記第1の電圧は、前記不揮発性半導体メモリセルのプログラム時に該不揮発性半導体メモリが接続されるビット線に印加される請求項1から6のいずれか一項記載の不揮発性半導体メモリ。
- 第1のタイミングで第1のチャージポンプの動作を開始させて第1の電圧を生成するステップと、
前記第1のタイミングに続く第2のタイミングで第2のチャージポンプの動作を開始させて、不揮発性半導体メモリセルに接続された所定ノードに第2の電圧を印加するステップと、
前記第2のタイミングで前記第1の電圧を用いて前記所定ノードをブーストするステップと
を有する方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/006262 WO2005109439A1 (ja) | 2004-05-11 | 2004-05-11 | 不揮発性半導体メモリ、半導体装置及びチャージポンプ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005109439A1 JPWO2005109439A1 (ja) | 2008-03-21 |
JP4642019B2 true JP4642019B2 (ja) | 2011-03-02 |
Family
ID=35320446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006512888A Expired - Lifetime JP4642019B2 (ja) | 2004-05-11 | 2004-05-11 | 不揮発性半導体メモリ、半導体装置及びチャージポンプ回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7113442B2 (ja) |
JP (1) | JP4642019B2 (ja) |
CN (1) | CN101002275A (ja) |
DE (1) | DE112004002852B4 (ja) |
GB (2) | GB2442831B8 (ja) |
WO (1) | WO2005109439A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100604939B1 (ko) * | 2005-06-07 | 2006-07-28 | 삼성전자주식회사 | 플래쉬 메모리 장치의 동작 모드에 따라 프로그램 전압,독출 전압 및 고전압을 발생하는 멀티 전압 발생부 |
US7460415B2 (en) * | 2006-12-15 | 2008-12-02 | Spansion Llc | Drain voltage regulator |
WO2011108367A1 (en) | 2010-03-02 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Boosting circuit and rfid tag including boosting circuit |
CN103326578B (zh) * | 2012-03-19 | 2016-03-02 | 旺宏电子股份有限公司 | 升压器系统 |
US9214859B2 (en) * | 2012-04-30 | 2015-12-15 | Macronix International Co., Ltd. | Charge pump system |
US9881654B2 (en) | 2015-01-14 | 2018-01-30 | Macronix International Co., Ltd. | Power source for memory circuitry |
US9536575B2 (en) | 2015-01-14 | 2017-01-03 | Macronix International Co., Ltd. | Power source for memory circuitry |
TWI602386B (zh) * | 2016-12-14 | 2017-10-11 | 矽統科技股份有限公司 | 電荷泵浦電路 |
US10847227B2 (en) * | 2018-10-16 | 2020-11-24 | Silicon Storage Technology, Inc. | Charge pump for use in non-volatile flash memory devices |
KR20200118332A (ko) * | 2019-04-05 | 2020-10-15 | 에스케이하이닉스 시스템아이씨 주식회사 | 불휘발성 메모리 장치의 동적 전압 공급 회로 및 이를 포함하는 불휘발성 메모리 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08297986A (ja) * | 1995-04-24 | 1996-11-12 | Sharp Corp | 不揮発性半導体記憶装置 |
JP2002026254A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体集積回路および不揮発性メモリ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5280420A (en) * | 1992-10-02 | 1994-01-18 | National Semiconductor Corporation | Charge pump which operates on a low voltage power supply |
EP0716368B1 (en) * | 1994-12-05 | 2002-06-12 | STMicroelectronics S.r.l. | Charge pump voltage multiplier circuit with control feedback and corresponding method |
JP3805830B2 (ja) * | 1996-05-31 | 2006-08-09 | 株式会社ルネサステクノロジ | 不揮発性メモリ |
JP2003203488A (ja) * | 2001-12-28 | 2003-07-18 | Mitsubishi Electric Corp | 不揮発性半導体メモリ |
JP2004055012A (ja) * | 2002-07-18 | 2004-02-19 | Renesas Technology Corp | 不揮発性半導体メモリ |
-
2004
- 2004-05-11 GB GB0717268A patent/GB2442831B8/en not_active Expired - Fee Related
- 2004-05-11 WO PCT/JP2004/006262 patent/WO2005109439A1/ja active Application Filing
- 2004-05-11 JP JP2006512888A patent/JP4642019B2/ja not_active Expired - Lifetime
- 2004-05-11 DE DE112004002852T patent/DE112004002852B4/de not_active Expired - Fee Related
- 2004-05-11 CN CNA2004800435741A patent/CN101002275A/zh active Pending
- 2004-05-11 GB GB0622086A patent/GB2427948B/en not_active Expired - Fee Related
-
2005
- 2005-05-11 US US11/126,701 patent/US7113442B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08297986A (ja) * | 1995-04-24 | 1996-11-12 | Sharp Corp | 不揮発性半導体記憶装置 |
JP2002026254A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体集積回路および不揮発性メモリ |
Also Published As
Publication number | Publication date |
---|---|
GB2442831A (en) | 2008-04-16 |
WO2005109439A1 (ja) | 2005-11-17 |
GB0717268D0 (en) | 2007-10-17 |
DE112004002852B4 (de) | 2012-04-19 |
GB0622086D0 (en) | 2006-12-13 |
CN101002275A (zh) | 2007-07-18 |
JPWO2005109439A1 (ja) | 2008-03-21 |
GB2442831B8 (en) | 2012-05-30 |
GB2442831B (en) | 2008-06-18 |
US20050254313A1 (en) | 2005-11-17 |
GB2427948A (en) | 2007-01-10 |
DE112004002852T5 (de) | 2007-04-12 |
GB2427948B (en) | 2007-11-14 |
US7113442B2 (en) | 2006-09-26 |
GB2442831A8 (en) | 2012-05-30 |
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