JP4641741B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP4641741B2
JP4641741B2 JP2004159597A JP2004159597A JP4641741B2 JP 4641741 B2 JP4641741 B2 JP 4641741B2 JP 2004159597 A JP2004159597 A JP 2004159597A JP 2004159597 A JP2004159597 A JP 2004159597A JP 4641741 B2 JP4641741 B2 JP 4641741B2
Authority
JP
Japan
Prior art keywords
region
impurity region
impurity
channel
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004159597A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005340638A5 (enExample
JP2005340638A (ja
Inventor
和之 須賀原
吉彦 豊田
直紀 中川
孝雄 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004159597A priority Critical patent/JP4641741B2/ja
Priority to US11/137,660 priority patent/US7262433B2/en
Priority to CN2005100713739A priority patent/CN1716634B/zh
Publication of JP2005340638A publication Critical patent/JP2005340638A/ja
Publication of JP2005340638A5 publication Critical patent/JP2005340638A5/ja
Application granted granted Critical
Publication of JP4641741B2 publication Critical patent/JP4641741B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004159597A 2004-05-28 2004-05-28 半導体装置 Expired - Fee Related JP4641741B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004159597A JP4641741B2 (ja) 2004-05-28 2004-05-28 半導体装置
US11/137,660 US7262433B2 (en) 2004-05-28 2005-05-26 Semiconductor device
CN2005100713739A CN1716634B (zh) 2004-05-28 2005-05-27 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004159597A JP4641741B2 (ja) 2004-05-28 2004-05-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2005340638A JP2005340638A (ja) 2005-12-08
JP2005340638A5 JP2005340638A5 (enExample) 2006-11-24
JP4641741B2 true JP4641741B2 (ja) 2011-03-02

Family

ID=35424199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004159597A Expired - Fee Related JP4641741B2 (ja) 2004-05-28 2004-05-28 半導体装置

Country Status (3)

Country Link
US (1) US7262433B2 (enExample)
JP (1) JP4641741B2 (enExample)
CN (1) CN1716634B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW578122B (en) * 2002-06-05 2004-03-01 Au Optronics Corp Driving circuit for thin film transistor liquid crystal display
JP4641741B2 (ja) 2004-05-28 2011-03-02 三菱電機株式会社 半導体装置
JP2006269808A (ja) * 2005-03-24 2006-10-05 Mitsubishi Electric Corp 半導体装置および画像表示装置
TWI409934B (zh) * 2005-10-12 2013-09-21 半導體能源研究所股份有限公司 半導體裝置
JP4548408B2 (ja) 2006-11-29 2010-09-22 セイコーエプソン株式会社 半導体装置の製造方法
CN102576732B (zh) 2009-07-18 2015-02-25 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
US8653531B2 (en) 2009-11-12 2014-02-18 Sharp Kabushiki Kaisha Thin film transistor and display device
KR20150044327A (ko) * 2013-10-16 2015-04-24 삼성디스플레이 주식회사 전계 완화 박막트랜지스터, 이의 제조 방법 및 이를 포함하는 표시장치
KR102586938B1 (ko) * 2016-09-05 2023-10-10 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04269836A (ja) * 1991-02-25 1992-09-25 Sony Corp ｎチャンネルＭＩＳ半導体装置
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3901893B2 (ja) * 1998-11-25 2007-04-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2000252473A (ja) 1998-12-18 2000-09-14 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、半導体装置およびその作製方法
JP4869464B2 (ja) * 1998-12-25 2012-02-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4641586B2 (ja) * 1999-03-12 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4850328B2 (ja) 2000-08-29 2012-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4801262B2 (ja) 2001-01-30 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4673513B2 (ja) * 2001-08-01 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5038560B2 (ja) * 2001-08-01 2012-10-03 ゲットナー・ファンデーション・エルエルシー 電界効果型トランジスタ及びその製造方法並びに該トランジスタを使った液晶表示装置及びその製造方法
JP4641741B2 (ja) 2004-05-28 2011-03-02 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US7262433B2 (en) 2007-08-28
JP2005340638A (ja) 2005-12-08
CN1716634A (zh) 2006-01-04
US20050263770A1 (en) 2005-12-01
CN1716634B (zh) 2010-05-05

Similar Documents

Publication Publication Date Title
US5396084A (en) Thin film transistor device having driving circuit and matrix circuit
KR100815064B1 (ko) 박막 반도체 장치 및 그의 구동 방법
JP5101116B2 (ja) 表示装置及びその製造方法
US6995048B2 (en) Thin film transistor and active matrix type display unit production methods therefor
JP2011518434A (ja) 薄膜トランジスタおよびアクティブマトリクスディスプレイ
CN107731858A (zh) 一种阵列基板、其制作方法及显示面板
US7432138B2 (en) Thin film transistor substrate and manufacturing method for the same
KR100458710B1 (ko) Ｏｅｌｄ용 결정질 실리콘 박막트랜지스터 패널 및 제작방법
KR100458714B1 (ko) Ｏｅｌｄ용 결정질 실리콘 박막트랜지스터 패널 및 제작방법
KR100727714B1 (ko) 반도체 장치 및 화상 표시 장치
JP4641741B2 (ja) 半導体装置
US7256457B2 (en) Thin-film transistor device, utilizing different types of thin film transistors
CN100459168C (zh) 半导体器件
US8357977B2 (en) Semiconductor device and method for manufacturing same
WO2006126423A1 (ja) 薄膜トランジスタ基板及びそれを備えた液晶表示装置、並びに薄膜トランジスタ基板の製造方法
JP5414712B2 (ja) 半導体装置
US8759166B2 (en) Method for manufacturing thin film transistor device
JP2006330719A (ja) 有機発光ディスプレイ及びその製造方法
GB2459666A (en) Thin film transistor with low leakage current
JP2002083973A (ja) 薄膜トランジスタとその製造方法、及びそれを用いた液晶表示装置
JP2005064049A (ja) 薄膜トランジスタ及びその形成方法及びこの薄膜トランジスタを用いて構成される回路及び表示装置
JP2008227210A (ja) 半導体装置、半導体装置の製造方法、および電気光学装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061005

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061005

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090908

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100330

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100518

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101124

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101130

R150 Certificate of patent or registration of utility model

Ref document number: 4641741

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees