CN1716634B - 半导体器件 - Google Patents

半导体器件 Download PDF

Info

Publication number
CN1716634B
CN1716634B CN2005100713739A CN200510071373A CN1716634B CN 1716634 B CN1716634 B CN 1716634B CN 2005100713739 A CN2005100713739 A CN 2005100713739A CN 200510071373 A CN200510071373 A CN 200510071373A CN 1716634 B CN1716634 B CN 1716634B
Authority
CN
China
Prior art keywords
film transistor
region
impurity region
forming
polysilicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100713739A
Other languages
English (en)
Chinese (zh)
Other versions
CN1716634A (zh
Inventor
须贺原和之
中川直纪
丰田吉彦
坂本孝雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1716634A publication Critical patent/CN1716634A/zh
Application granted granted Critical
Publication of CN1716634B publication Critical patent/CN1716634B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2005100713739A 2004-05-28 2005-05-27 半导体器件 Expired - Fee Related CN1716634B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-159597 2004-05-28
JP2004159597 2004-05-28
JP2004159597A JP4641741B2 (ja) 2004-05-28 2004-05-28 半導体装置

Publications (2)

Publication Number Publication Date
CN1716634A CN1716634A (zh) 2006-01-04
CN1716634B true CN1716634B (zh) 2010-05-05

Family

ID=35424199

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100713739A Expired - Fee Related CN1716634B (zh) 2004-05-28 2005-05-27 半导体器件

Country Status (3)

Country Link
US (1) US7262433B2 (enExample)
JP (1) JP4641741B2 (enExample)
CN (1) CN1716634B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW578122B (en) * 2002-06-05 2004-03-01 Au Optronics Corp Driving circuit for thin film transistor liquid crystal display
JP4641741B2 (ja) 2004-05-28 2011-03-02 三菱電機株式会社 半導体装置
JP2006269808A (ja) * 2005-03-24 2006-10-05 Mitsubishi Electric Corp 半導体装置および画像表示装置
TWI409934B (zh) * 2005-10-12 2013-09-21 半導體能源研究所股份有限公司 半導體裝置
JP4548408B2 (ja) 2006-11-29 2010-09-22 セイコーエプソン株式会社 半導体装置の製造方法
CN102576732B (zh) 2009-07-18 2015-02-25 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
US8653531B2 (en) 2009-11-12 2014-02-18 Sharp Kabushiki Kaisha Thin film transistor and display device
KR20150044327A (ko) * 2013-10-16 2015-04-24 삼성디스플레이 주식회사 전계 완화 박막트랜지스터, 이의 제조 방법 및 이를 포함하는 표시장치
KR102586938B1 (ko) * 2016-09-05 2023-10-10 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1402357A (zh) * 2001-08-01 2003-03-12 日本电气株式会社 场效应型晶体管及制造方法、液晶显示装置及制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04269836A (ja) * 1991-02-25 1992-09-25 Sony Corp ｎチャンネルＭＩＳ半導体装置
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3901893B2 (ja) * 1998-11-25 2007-04-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2000252473A (ja) 1998-12-18 2000-09-14 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、半導体装置およびその作製方法
JP4869464B2 (ja) * 1998-12-25 2012-02-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4641586B2 (ja) * 1999-03-12 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4850328B2 (ja) 2000-08-29 2012-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4801262B2 (ja) 2001-01-30 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4673513B2 (ja) * 2001-08-01 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4641741B2 (ja) 2004-05-28 2011-03-02 三菱電機株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1402357A (zh) * 2001-08-01 2003-03-12 日本电气株式会社 场效应型晶体管及制造方法、液晶显示装置及制造方法

Also Published As

Publication number Publication date
US7262433B2 (en) 2007-08-28
JP2005340638A (ja) 2005-12-08
CN1716634A (zh) 2006-01-04
JP4641741B2 (ja) 2011-03-02
US20050263770A1 (en) 2005-12-01

Similar Documents

Publication Publication Date Title
US10840462B2 (en) Semiconductor device including semiconductor layers having different semiconductor materials
TWI399580B (zh) 半導體裝置及顯示裝置
CN101330094B (zh) 有机发光二极管显示装置及其制造方法
KR100920316B1 (ko) 발광 장치
TW491983B (en) Thin film semiconductor apparatus and method for driving the same
US20240206256A1 (en) Display panel and display device
EP2287825A2 (en) Active matrix substrate, electro-optical device, and electronic device
JP2007256926A (ja) 表示装置及びその製造方法
US9570618B1 (en) TFT substrate manufacturing method and TFT substrate
CN112310169B (zh) 显示装置
CN1716634B (zh) 半导体器件
JP2005051211A (ja) 発光装置
CN100459168C (zh) 半导体器件
JP2008010889A (ja) 発光装置、電子機器
US7525125B2 (en) Thin film transistor and organic electro-luminescence display device using the same
JP4364739B2 (ja) 半導体装置およびその製造方法
KR102923764B1 (ko) 표시장치
CN100501547C (zh) 具有多晶硅薄膜晶体管的平板显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100505

Termination date: 20180527