CN100501547C - 具有多晶硅薄膜晶体管的平板显示装置 - Google Patents
具有多晶硅薄膜晶体管的平板显示装置 Download PDFInfo
- Publication number
- CN100501547C CN100501547C CNB2006101218983A CN200610121898A CN100501547C CN 100501547 C CN100501547 C CN 100501547C CN B2006101218983 A CNB2006101218983 A CN B2006101218983A CN 200610121898 A CN200610121898 A CN 200610121898A CN 100501547 C CN100501547 C CN 100501547C
- Authority
- CN
- China
- Prior art keywords
- thin film
- film transistor
- tft
- active channel
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 326
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 137
- 239000013078 crystal Substances 0.000 claims description 163
- 229920005591 polysilicon Polymers 0.000 claims description 132
- 238000005401 electroluminescence Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 238000002425 crystallisation Methods 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 30
- 239000012528 membrane Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 22
- 230000008859 change Effects 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 230000008025 crystallization Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
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- 239000000463 material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
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- 238000010276 construction Methods 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000011121 hardwood Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- -1 naphthalene-1-yl Chemical group 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
红 | 绿 | 蓝 | |
效率(Cd/A) | 6.72 | 23.37 | 4.21 |
指示像素电流(μA) | 0.276 | 0.079 | 0.230 |
指示像素电流比率 | 3.5 | 1 | 2.9 |
Claims (13)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR36519/03 | 2003-06-05 | ||
KR10-2003-0036519A KR100521273B1 (ko) | 2003-06-05 | 2003-06-05 | 씨모스 박막 트래지스터 및 이를 사용한 디스플레이디바이스 |
KR37245/03 | 2003-06-10 | ||
KR51681/03 | 2003-07-25 | ||
KR51659/03 | 2003-07-25 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100050257A Division CN1324540C (zh) | 2003-06-05 | 2004-02-12 | 具有多晶硅薄膜晶体管的平板显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1975542A CN1975542A (zh) | 2007-06-06 |
CN100501547C true CN100501547C (zh) | 2009-06-17 |
Family
ID=37380381
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101218998A Expired - Lifetime CN100517731C (zh) | 2003-06-05 | 2004-02-12 | 互补型金属氧化物半导体薄膜晶体管及具有其的显示装置 |
CN200610121900A Expired - Lifetime CN100576549C (zh) | 2003-06-05 | 2004-02-12 | 平板显示装置 |
CNB2006101218983A Expired - Lifetime CN100501547C (zh) | 2003-06-05 | 2004-02-12 | 具有多晶硅薄膜晶体管的平板显示装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101218998A Expired - Lifetime CN100517731C (zh) | 2003-06-05 | 2004-02-12 | 互补型金属氧化物半导体薄膜晶体管及具有其的显示装置 |
CN200610121900A Expired - Lifetime CN100576549C (zh) | 2003-06-05 | 2004-02-12 | 平板显示装置 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100521273B1 (zh) |
CN (3) | CN100517731C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102132781B1 (ko) * | 2013-07-12 | 2020-07-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN110660836A (zh) * | 2019-09-30 | 2020-01-07 | 上海天马有机发光显示技术有限公司 | 一种显示面板及显示装置 |
-
2003
- 2003-06-05 KR KR10-2003-0036519A patent/KR100521273B1/ko active IP Right Grant
-
2004
- 2004-02-12 CN CNB2006101218998A patent/CN100517731C/zh not_active Expired - Lifetime
- 2004-02-12 CN CN200610121900A patent/CN100576549C/zh not_active Expired - Lifetime
- 2004-02-12 CN CNB2006101218983A patent/CN100501547C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1976042A (zh) | 2007-06-06 |
KR20040105311A (ko) | 2004-12-16 |
CN100517731C (zh) | 2009-07-22 |
CN1975542A (zh) | 2007-06-06 |
CN100576549C (zh) | 2009-12-30 |
CN1976043A (zh) | 2007-06-06 |
KR100521273B1 (ko) | 2005-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co.,Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co.,Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MONITOR CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121029 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG DISPLAY Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co.,Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20090617 |
|
CX01 | Expiry of patent term |