JP4641582B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4641582B2
JP4641582B2 JP35928799A JP35928799A JP4641582B2 JP 4641582 B2 JP4641582 B2 JP 4641582B2 JP 35928799 A JP35928799 A JP 35928799A JP 35928799 A JP35928799 A JP 35928799A JP 4641582 B2 JP4641582 B2 JP 4641582B2
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JP
Japan
Prior art keywords
conductive layer
region
forming
semiconductor layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP35928799A
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English (en)
Japanese (ja)
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JP2000236097A (ja
JP2000236097A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP35928799A priority Critical patent/JP4641582B2/ja
Publication of JP2000236097A publication Critical patent/JP2000236097A/ja
Publication of JP2000236097A5 publication Critical patent/JP2000236097A5/ja
Application granted granted Critical
Publication of JP4641582B2 publication Critical patent/JP4641582B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP35928799A 1998-12-18 1999-12-17 半導体装置の作製方法 Expired - Fee Related JP4641582B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35928799A JP4641582B2 (ja) 1998-12-18 1999-12-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP36153598 1998-12-18
JP10-361535 1998-12-18
JP35928799A JP4641582B2 (ja) 1998-12-18 1999-12-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000236097A JP2000236097A (ja) 2000-08-29
JP2000236097A5 JP2000236097A5 (enrdf_load_stackoverflow) 2007-05-10
JP4641582B2 true JP4641582B2 (ja) 2011-03-02

Family

ID=26580944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35928799A Expired - Fee Related JP4641582B2 (ja) 1998-12-18 1999-12-17 半導体装置の作製方法

Country Status (1)

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JP (1) JP4641582B2 (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2264771A3 (en) 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6562671B2 (en) 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002203972A (ja) * 2001-01-05 2002-07-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイとそれを用いた液晶表示装置
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
JP3953330B2 (ja) 2002-01-25 2007-08-08 三洋電機株式会社 表示装置
JP3723507B2 (ja) 2002-01-29 2005-12-07 三洋電機株式会社 駆動回路
JP2003308030A (ja) 2002-02-18 2003-10-31 Sanyo Electric Co Ltd 表示装置
JP2003332058A (ja) 2002-03-05 2003-11-21 Sanyo Electric Co Ltd エレクトロルミネッセンスパネルおよびその製造方法
CN100517422C (zh) 2002-03-07 2009-07-22 三洋电机株式会社 配线结构、其制造方法、以及光学设备
JP3837344B2 (ja) 2002-03-11 2006-10-25 三洋電機株式会社 光学素子およびその製造方法
JP4459655B2 (ja) * 2004-02-27 2010-04-28 セイコーインスツル株式会社 半導体集積回路装置
US7615495B2 (en) 2005-11-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR101250789B1 (ko) 2006-06-30 2013-04-08 엘지디스플레이 주식회사 액정표시장치의 제조방법
JP5098508B2 (ja) * 2007-08-13 2012-12-12 ソニー株式会社 有機エレクトロルミネッセンス表示装置、及び、有機エレクトロルミネッセンス発光部を駆動するための駆動回路、並びに、有機エレクトロルミネッセンス発光部の駆動方法
JP5575455B2 (ja) 2009-10-29 2014-08-20 株式会社ジャパンディスプレイ 表示装置の製造方法
EP4123427A4 (en) * 2020-03-20 2023-02-01 BOE Technology Group Co., Ltd. Display panel and display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810299B2 (ja) * 1988-03-11 1996-01-31 株式会社精工舎 薄膜トランジスタアレイ
JPH02290029A (ja) * 1989-04-28 1990-11-29 Fujitsu Ltd 薄膜トランジスタマトリクスの製造方法
JP3293837B2 (ja) * 1991-02-20 2002-06-17 セイコーエプソン株式会社 薄膜トランジスタの製造方法
KR100309934B1 (ko) * 1992-06-24 2002-06-20 구사마 사부로 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법

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Publication number Publication date
JP2000236097A (ja) 2000-08-29

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