JP4459655B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP4459655B2 JP4459655B2 JP2004053727A JP2004053727A JP4459655B2 JP 4459655 B2 JP4459655 B2 JP 4459655B2 JP 2004053727 A JP2004053727 A JP 2004053727A JP 2004053727 A JP2004053727 A JP 2004053727A JP 4459655 B2 JP4459655 B2 JP 4459655B2
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- mos transistor
- gate electrode
- wiring metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
(1) MOSトランジスターのソースに結線している配線金属を該ソース側から該MOSトランジスターのゲート電極にオーバラップさせている第1のMOSトランジスターと、ソースに結線している配線金属が該ソース側からゲート電極にオーバラップしていない第2のMOSトランジスターとから成ることを特徴とする半導体集積回路装置とした。
(2) 前記第1のMOSトランジスターの前記ゲート電極にオーバラップしている配線金属のチャネル幅に対するオーバラップ割合は0以上1以下の任意の値であることを特徴とする半導体集積回路装置とした。
(3) 前記第1のMOSトランジスターの前記ゲート電極にオーバラップしている配線金属の該ゲート電極へのオーバラップ量は0.2μm以上であることを特徴とする半導体集積回路装置とした。
その詳細なメカニズムは後述する。
ここで第1のMOSトランジスターと第2のMOSトランジスターの違いはソース配線金属107と108のパターンである。通常は第2のMOSトランジスターに示されているようにソース配線金属はゲート電極にオーバラップしていないレイアウトを用いる。
ソース配線金属をゲート電極にオーバラップさせた場合、NMOSであればVthは増大し、PMOSであれば減少、すなわち両方のMOSともにVthの絶対値において増大する。
MOSトランジスターでは一般的に半導体基板とゲート絶縁膜界面に界面準位が存在し、その界面準位はゲート電極とソースおよびドレインとのオーバラップ領域においてその密度は大きい。その界面準位は配線金属と半導体の合金化反応を促進する水素を含む雰囲気中でのシンター処理、もしくはプラズマ窒化膜などの水素を含む保護膜形成の際、水素が絶縁膜中を拡散し半導体基板とゲート絶縁膜界面に達し準位をターミネートし準位密度は低減する。
ゲート電極をオーバラップするようにソースおよびドレイン配線金属をレイアウトすると水素拡散が配線金属により抑制され、従ってそういったレイアウトのMOSにおいては界面準位密度は低減せず、Vthは絶対値で高い値となる。
本発明はこの現象を利用している。図1に示す第1のMOSトランジスターのVthは第2のMOSトランジスターに比べVthの絶対値は高く、何ら工程増なく同一半導体集積回路上にマルチVthを実現可能とする。
A/B=100%のときはMOSのゲート絶縁膜厚や基板濃度にもよるが、全くオーバラップしないMOSに比べ約0.3V程度Vthは増大し、A/B=0の場合は配線金属が全くオーバラップしていないMOSと同じ値となる。Vthの変化具合はこのA/B値に比例するので、従来のフォト工程とイオン注入工程によるマルチVth法に比べパターン設計値を変えることでよりきめの細かいマルチVth化が可能となる。
ドレイン配線金属をゲート電極にオーバラップさせても同様な効果は得られるが、MOSを飽和動作させた場合、Vthの増加程度は小さくソース側の配線金属をオーバラップさせた方が効果的である。なお、配線金属のゲート電極へのオーバラップ量は0.2μm以上あれば本発明の効果が期待できる。
本発明はNMOS、PMOS両方の極性のMOSにおいて適用可能であり、さらにVthがノーマリーオフ型のエンハンスメント、ノーマリーオン型のデプリーションどちらにおいても同じ効果が得られる。
以上本発明によれば、コスト増や製造工期の増大なくマルチVth化が可能であり、従って付加価値の高い高機能なアナログ半導体集積回路装置を提供することが可能となる。
102 第2のMOSトランジスター
103 アクティブ領域
104 ゲート電極
105 コンタクト
106 ドレイン配線金属
107 ソース配線金属
108 ソース配線金属
201 半導体基板
202 フォトレジスト
203 イオン注入
204 フォトレジスト
205 イオン注入
Claims (3)
- MOSトランジスターのソースに結線している配線金属をアクティブ領域内で部分的に幅広とすることにより該ソース側から該MOSトランジスターのゲート電極にオーバラップさせている第1のMOSトランジスターと、ソースに結線している配線金属が該ソース側からゲート電極にオーバラップしていない第2のMOSトランジスターとから成り、前記第1のMOSトランジスターのしきい値電圧の絶対値が、前記第2のMOSトランジスターのしきい値電圧の絶対値よりも大きいことを特徴とする半導体集積回路装置。
- 前記第1のMOSトランジスターの前記ゲート電極にオーバラップしている前記配線金属のチャネル幅に対するオーバラップ割合は0以上1以下の任意の値であることを特徴とする請求項1記載の半導体集積回路装置。
- 前記第1のMOSトランジスターの前記ゲート電極にオーバラップしている前記配線金属の前記ゲート電極へのオーバラップ量は0.2μm以上であることを特徴とする請求項1記載の半導体集積回路装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004053727A JP4459655B2 (ja) | 2004-02-27 | 2004-02-27 | 半導体集積回路装置 |
US11/066,033 US7227231B2 (en) | 2004-02-27 | 2005-02-25 | Semiconductor integrated circuit device |
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JP2004053727A JP4459655B2 (ja) | 2004-02-27 | 2004-02-27 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005244034A JP2005244034A (ja) | 2005-09-08 |
JP4459655B2 true JP4459655B2 (ja) | 2010-04-28 |
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JP2004053727A Expired - Fee Related JP4459655B2 (ja) | 2004-02-27 | 2004-02-27 | 半導体集積回路装置 |
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US (1) | US7227231B2 (ja) |
JP (1) | JP4459655B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4567396B2 (ja) * | 2004-08-10 | 2010-10-20 | セイコーインスツル株式会社 | 半導体集積回路装置 |
JP4575079B2 (ja) * | 2004-08-10 | 2010-11-04 | セイコーインスツル株式会社 | 半導体集積回路装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04124835A (ja) * | 1990-09-14 | 1992-04-24 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH07147412A (ja) * | 1993-11-24 | 1995-06-06 | Sony Corp | 表示素子基板用半導体装置 |
KR100214841B1 (ko) * | 1996-03-29 | 1999-08-02 | 김주용 | 반도체 소자 및 그의 제조방법 |
JP2000058852A (ja) * | 1998-08-17 | 2000-02-25 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びそれを用いた表示装置 |
JP4641582B2 (ja) * | 1998-12-18 | 2011-03-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6469317B1 (en) * | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6346730B1 (en) * | 1999-04-06 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
JP3439379B2 (ja) * | 1999-06-10 | 2003-08-25 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6215187B1 (en) * | 1999-06-11 | 2001-04-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP3737045B2 (ja) * | 2001-11-13 | 2006-01-18 | 株式会社リコー | 半導体装置 |
KR100487521B1 (ko) * | 2002-03-19 | 2005-05-03 | 삼성전자주식회사 | 부동체 효과를 제거하는 스태틱 랜덤 억세스 메모리 셀 및그 제조방법 |
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2004
- 2004-02-27 JP JP2004053727A patent/JP4459655B2/ja not_active Expired - Fee Related
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- 2005-02-25 US US11/066,033 patent/US7227231B2/en active Active
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US20050190628A1 (en) | 2005-09-01 |
JP2005244034A (ja) | 2005-09-08 |
US7227231B2 (en) | 2007-06-05 |
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