JP4636882B2 - 気密に密封された素子、及びこれを製造するための方法 - Google Patents
気密に密封された素子、及びこれを製造するための方法 Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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Description
図2は、チップの表面側の概略的な平面図、
図3は、本発明の1実施例による、中間層を備えた素子の横断面図、
図4は、チップの表面側の別の概略的な平面図、
図5は、被着されたフレーム構造を備えたウェーハの平面図、
図6は、ウェーハとフレーム構造とカバーとから成るサンドイッチ構造、
図7は、チップに楔状の切り込みを形成した後の構造、
図8は、裏側及び底面側の金属被覆を製作した後の構造、
図9は、多くの形式の可能なフィードスルー接触を示す概略的な横断面図である。
Claims (22)
- 気密に密封された素子において、
接着されたサンドイッチ構造が設けられていて、該サンドイッチ構造の外側縁部が整列されており、
該サンドイッチ構造が、チップ(Ch)を有していて、このチップの表面側に素子構造(BS)及び、この素子構造(BS)に接続された接続金属被覆(AM)が形成されており、該サンドイッチ構造がさらに、前記素子構造(BS)を包囲するフレーム構造(RS)と、拡散を阻止するカバー(AD)とを有しており、
裏面金属被覆(RM)が設けられていて、該裏面金属被覆(RM)がチップの裏面側を越えてサンドイッチ構造のすべての継ぎ目縁部(SK)にまで達しており、
チップとは反対側の、カバー(AD)の底面上に底面接点(UK)が設けられており、
カバーを貫通するフィードスルー接触(DK)が設けられていて、該フィードスルー接触が、チップ上の素子構造(BS)を底面接点に導電接続しており、
フィードスルー接触の内側面が底面金属被覆(UM)によって金属被覆されていて、それによって拡散しないようにシールされており、
前記サンドイッチ構造内に別の配線面(VE)が設けられており、該配線面(VE)がフィードスルー接触(DK)を介して接続金属被覆(AM)とも、また底面接点(UK)とも接続されている、
ことを特徴とする、気密に密封された素子。 - フレーム構造(RS)内で、サンドイッチ構造内のカバーとチップ(Ch)との間に、閉じた中空室が形成されている、請求項1記載の素子。
- フレーム構造(RS)が、内方に向けられた突出部(AL)又は絶縁された島状の部分(RSi)を形成しており、該島状の部分(RSi)がサンドイッチ構造内で別の中空室を包囲していて、この別の中空室内でチップ(CH)の表面上に接続金属被覆(AM)が配置されている、請求項1又は2記載の素子。
- カバー(AD)とフレーム構造(RS)との間に少なくとも1つの別の中間層と、少なくとも1つの配線面(VE)とが設けられている、請求項1から3までのいずれか1項記載の素子。
- 配線面(VE)内に金属構造が設けられており、該金属構造が、キャパシタンス、インダクタンス及びオーム抵抗から選択された具体的な受動素子、及び導体路を形成している、請求項3又は4記載の素子。
- カバー(AD)の材料が、セラミック、金属及びガラスから選択されていて、フレーム構造の材料が、ベンゾシクロブテン、ポリイミド及びベンゾオキサゾールから選択されている、請求項1から5までのいずれか1項記載の素子。
- チップ(Ch)上の素子構造(BS)によって、マイクロエレクトロニクス素子、表面波素子、FBAR共振器、マイクロ光学素子、マイクロメカニカル素子、又は以上の型式から成るハイブリッド素子が形成されている、請求項1から6までのいずれか1項記載の素子。
- 素子構造(BS)を包囲する中空室が、空気よりも高い火花強度又は低い火花強度を有する保護ガスで満たされている、請求項1から7までのいずれか1項記載の素子。
- すべてのフィードスルー接触(DK)が円錐形に構成されている、請求項1から8までのいずれか1項記載の素子。
- 前記素子の外側縁部が斜めに構成されていて、前記素子が、前記チップ(Ch)の裏面側から前記フレーム構造(RS)を越えてキャリアに向かって次第に大きくなる横断面を有している、請求項1から9までのいずれか1項記載の素子。
- 前記素子の側縁は前記チップ(Ch)側が斜めにカットされていて、前記裏面金属被覆(RM)を備えており、該裏面金属被覆(RM)は、前記チップ(Ch)の裏面側全体を覆っていて、前記カバー(AD)の側縁の同様に斜めにカットされた領域に亘って延在しており、前記チップ(Ch)と前記フレーム構造(RS)とチップ側縁における前記カバー(AD)との境界面を形成する前記継ぎ目縁部(SK)全体が、前記裏面金属被覆(RM)によってカバーされている、請求項1から10までのいずれか1項記載の素子。
- 請求項1から11までのいずれか1項記載の、気密に密封された素子を製造するための方法において、次の方法ステップを有している、即ち、
ウェーハ(W)の表面側に、複数の個別素子のための素子構造(BS)を形成し、
ウェーハ上に、個別素子に配属された各素子構造(BS)を環状に包囲するフレーム構造(RS)を被着し、
前記フレーム構造に拡散を阻止するカバー(AD)を接着し、それによって個別の素子に配属された素子構造をそれぞれ気密な中空室内に配置し、
カバー内にフィードスルー接触(DK)を設け、該フィードスルー接触(DK)によって、ウェーハ上の素子構造を、ウェーハとは反対側の、カバーの底面側における接点(UK)と導電接続し、
フィードスルー接触を、カバーの下側から、拡散を阻止する底面金属被覆(UM)によってシールし、
ウェーハの裏面側から切り込み(ES)によって、各フレーム構造の外側縁部領域を切断してカバー内まで達する溝パターンを形成し、
切り込み(ES)内に露出する表面を含む、ウェーハのすべての裏面側に、裏面金属被覆を施し、
切り込みに沿って各素子を個別に分離する、
ステップを有していることを特徴とする、気密に密封された素子を製造するための方法。 - フレーム構造(RS)と一緒に、又はフレーム構造(RS)に対して付加的に、中間層(ZS)を形成し、
中間層上に別の配線面(VE)を形成して、フィードスルー接触(DK)を介して、ウェーハ(W)上の接続金属被覆(AM)に接続する、
請求項12記載の方法。 - 中間層(ZS)として、素子構造(BS)を中空室内に閉じこめるカバー薄膜をフレーム構造(RS)上に接着する、請求項12又は13記載の方法。
- カバー薄膜をまず補助薄膜上に施し、この補助薄膜と共にフレーム構造(RS)上に積層し、パターニングし、次いで補助薄膜を取り除く、請求項12から14までのいずれか1項記載の方法。
- カバー薄膜を粘着性の反応樹脂として補助薄膜上に施し、積層後に硬化させる、請求項15記載の方法。
- フレーム構造(RS)、並びに、設けられている場合には中間層(ZS)及びカバー薄膜の少なくともいずれか1つを施した後に、パターニングする、請求項12から16までのいずれか1項記載の方法。
- フレーム構造(RS)及び中間層(ZS)及びカバー薄膜の少なくともいずれか1つのパターニングを、フォトパターニング、レジストマスクを用いてパターニングされたエッチング又はレーザー浸食から選択して行う、請求項17記載の方法。
- 底面金属被覆(UM)及び裏面金属被覆(RM)及び配線面(VE)の少なくともいずれか1つを製作するために、まずベース金属被覆をスパッタリングし、次いで湿式化学式に又は電気メッキ式に補強する、請求項12から18までのいずれか1項記載の方法。
- 裏面金属被覆(RM)及び底面金属被覆(UM)及び配線面(VE)の少なくともいずれか1つを全面的に施し、次いでパターニングする、請求項19記載の方法。
- 配線面(VE)のための全面的な金属被覆を施す前に、露出した素子構造(BS)を保護塗膜によってカバーし、次いで該保護塗膜を、この保護塗膜上に施された金属被覆と共に除去する、請求項20記載の方法。
- ウェーハ(W)の表面側及びカバー(AD)の上面側の少なくともいずれか1つにおいて、少なくともフレーム構造(RS)の領域内で表面を粗くする、請求項12から21までのいずれか1項記載の方法。
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DE10253163.3A DE10253163B4 (de) | 2002-11-14 | 2002-11-14 | Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung |
PCT/EP2003/011448 WO2004044980A2 (de) | 2002-11-14 | 2003-10-15 | Bauelement mit hermetischer verkapselung und waferscale verfahren zur herstellung |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9548279B2 (en) | 2013-09-25 | 2017-01-17 | Kabushiki Kaisha Toshiba | Connection member, semiconductor device, and stacked structure |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100386849B1 (ko) * | 2001-07-10 | 2003-06-09 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 표시장치의 정전방전 방지회로 |
KR100807484B1 (ko) * | 2004-10-07 | 2008-02-25 | 삼성전기주식회사 | 소수성 물질층을 구비한 mems 패키지 |
KR100855819B1 (ko) * | 2004-10-08 | 2008-09-01 | 삼성전기주식회사 | 금속 밀봉부재가 형성된 mems 패키지 |
US7422962B2 (en) * | 2004-10-27 | 2008-09-09 | Hewlett-Packard Development Company, L.P. | Method of singulating electronic devices |
DE102005006833B4 (de) * | 2005-02-15 | 2017-02-23 | Epcos Ag | Verfahren zur Herstellung eines BAW-Bauelements und BAW-Bauelement |
DE102005026243B4 (de) | 2005-06-07 | 2018-04-05 | Snaptrack, Inc. | Elektrisches Bauelement und Herstellungsverfahren |
US7316965B2 (en) * | 2005-06-21 | 2008-01-08 | Freescale Semiconductor, Inc. | Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level |
KR100653089B1 (ko) * | 2005-10-31 | 2006-12-04 | 삼성전자주식회사 | 탄성 표면파 디바이스 웨이퍼 레벨 패키지 및 그 패키징방법 |
EP1976118A4 (en) * | 2006-01-18 | 2011-12-14 | Murata Manufacturing Co | ACOUSTIC SURFACE WAVE DEVICE AND LIMIT ACOUSTIC WAVE DEVICE |
US20070251719A1 (en) * | 2006-04-27 | 2007-11-01 | Rick Sturdivant | Selective, hermetically sealed microwave package apparatus and methods |
DE102006025162B3 (de) * | 2006-05-30 | 2008-01-31 | Epcos Ag | Flip-Chip-Bauelement und Verfahren zur Herstellung |
DE102006037587A1 (de) * | 2006-08-11 | 2008-02-14 | Advanced Chip Engineering Technology Inc. | Halbleitervorrichtungs-Schutzstruktur und Verfahren zum Herstellen derselben |
US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US7671515B2 (en) * | 2006-11-07 | 2010-03-02 | Robert Bosch, Gmbh | Microelectromechanical devices and fabrication methods |
US20080112037A1 (en) * | 2006-11-10 | 2008-05-15 | Spatial Photonics, Inc. | Hermetic sealing of micro devices |
DE102006056598B4 (de) | 2006-11-30 | 2013-10-02 | Globalfoundries Inc. | Verfahren zur Herstellung eines Transistorbauelements für eine integrierte Schaltung |
US7952195B2 (en) | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
DE102007001518B4 (de) * | 2007-01-10 | 2016-12-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zum Häusen eines mikromechanischen oder mikrooptoelektronischen Systems |
DE102007030284B4 (de) | 2007-06-29 | 2009-12-31 | Schott Ag | Verfahren zum Verpacken von Halbleiter-Bauelementen und verfahrensgemäß hergestelltes Zwischenprodukt |
US8461672B2 (en) | 2007-07-27 | 2013-06-11 | Tessera, Inc. | Reconstituted wafer stack packaging with after-applied pad extensions |
WO2009020572A2 (en) | 2007-08-03 | 2009-02-12 | Tessera Technologies Hungary Kft. | Stack packages using reconstituted wafers |
TWI345830B (en) * | 2007-08-08 | 2011-07-21 | Xintec Inc | Image sensor package and fabrication method thereof |
US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
WO2009038686A2 (en) * | 2007-09-14 | 2009-03-26 | Tessera Technologies Hungary Kft. | Hermetic wafer level cavity package |
US7863699B2 (en) * | 2008-05-21 | 2011-01-04 | Triquint Semiconductor, Inc. | Bonded wafer package module |
US8680662B2 (en) | 2008-06-16 | 2014-03-25 | Tessera, Inc. | Wafer level edge stacking |
DE102008058003B4 (de) * | 2008-11-19 | 2012-04-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls und Halbleitermodul |
US8466542B2 (en) | 2009-03-13 | 2013-06-18 | Tessera, Inc. | Stacked microelectronic assemblies having vias extending through bond pads |
DE102011018296B4 (de) * | 2010-08-25 | 2020-07-30 | Snaptrack, Inc. | Bauelement und Verfahren zum Herstellen eines Bauelements |
KR20120071819A (ko) * | 2010-12-23 | 2012-07-03 | 한국전자통신연구원 | 미세가공 소자의 진공 웨이퍼 레벨 패키지 방법 |
WO2012120968A1 (ja) | 2011-03-09 | 2012-09-13 | 株式会社村田製作所 | 電子部品 |
WO2012132147A1 (ja) | 2011-03-28 | 2012-10-04 | 株式会社村田製作所 | 電子部品及びその製造方法 |
CN106888001B (zh) * | 2017-03-08 | 2020-07-17 | 宜确半导体(苏州)有限公司 | 声波设备及其晶圆级封装方法 |
CN106888002B (zh) * | 2017-03-08 | 2020-03-20 | 宜确半导体(苏州)有限公司 | 声波设备及其晶圆级封装方法 |
US11244876B2 (en) | 2019-10-09 | 2022-02-08 | Microchip Technology Inc. | Packaged semiconductor die with micro-cavity |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
US4040874A (en) * | 1975-08-04 | 1977-08-09 | General Electric Company | Semiconductor element having a polymeric protective coating and glass coating overlay |
US5334874A (en) | 1991-09-13 | 1994-08-02 | Metzler Richard A | Electronic device package |
US5300812A (en) * | 1992-12-09 | 1994-04-05 | General Electric Company | Plasticized polyetherimide adhesive composition and usage |
DE59504639D1 (de) | 1994-05-02 | 1999-02-04 | Siemens Matsushita Components | Verkapselung für elektronische bauelemente |
JP3265889B2 (ja) * | 1995-02-03 | 2002-03-18 | 松下電器産業株式会社 | 表面弾性波装置及びその製造方法 |
US5750926A (en) * | 1995-08-16 | 1998-05-12 | Alfred E. Mann Foundation For Scientific Research | Hermetically sealed electrical feedthrough for use with implantable electronic devices |
US5987732A (en) * | 1998-08-20 | 1999-11-23 | Trw Inc. | Method of making compact integrated microwave assembly system |
FR2786959B1 (fr) * | 1998-12-08 | 2001-05-11 | Thomson Csf | Composant a ondes de surface encapsule et procede de fabrication collective |
IL133453A0 (en) | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
DE10006446A1 (de) | 2000-02-14 | 2001-08-23 | Epcos Ag | Verkapselung für ein elektrisches Bauelement und Verfahren zur Herstellung |
DK1402572T3 (en) * | 2001-06-16 | 2014-03-17 | Oticon As | A method of manufacturing a miniature amplifier and signal processing unit |
DE10136743B4 (de) * | 2001-07-27 | 2013-02-14 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelementes |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9548279B2 (en) | 2013-09-25 | 2017-01-17 | Kabushiki Kaisha Toshiba | Connection member, semiconductor device, and stacked structure |
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WO2004044980A3 (de) | 2004-07-29 |
US20060043601A1 (en) | 2006-03-02 |
DE10253163B4 (de) | 2015-07-23 |
DE10253163A1 (de) | 2004-05-27 |
US7102224B2 (en) | 2006-09-05 |
JP2006506805A (ja) | 2006-02-23 |
WO2004044980A2 (de) | 2004-05-27 |
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