CN106888002B - 声波设备及其晶圆级封装方法 - Google Patents
声波设备及其晶圆级封装方法 Download PDFInfo
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- CN106888002B CN106888002B CN201710132927.4A CN201710132927A CN106888002B CN 106888002 B CN106888002 B CN 106888002B CN 201710132927 A CN201710132927 A CN 201710132927A CN 106888002 B CN106888002 B CN 106888002B
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710132927.4A CN106888002B (zh) | 2017-03-08 | 2017-03-08 | 声波设备及其晶圆级封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710132927.4A CN106888002B (zh) | 2017-03-08 | 2017-03-08 | 声波设备及其晶圆级封装方法 |
Publications (2)
Publication Number | Publication Date |
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CN106888002A CN106888002A (zh) | 2017-06-23 |
CN106888002B true CN106888002B (zh) | 2020-03-20 |
Family
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Family Applications (1)
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CN201710132927.4A Active CN106888002B (zh) | 2017-03-08 | 2017-03-08 | 声波设备及其晶圆级封装方法 |
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CN (1) | CN106888002B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108313974A (zh) * | 2018-02-07 | 2018-07-24 | 宜确半导体(苏州)有限公司 | 声学设备及其晶圆级封装方法 |
CN111952199A (zh) * | 2019-05-16 | 2020-11-17 | 中芯集成电路(宁波)有限公司 | 空气隙型半导体器件封装结构及其制作方法 |
JP7297329B2 (ja) | 2019-05-16 | 2023-06-26 | 中芯集成電路(寧波)有限公司上海分公司 | エアギャップ型半導体デバイスのパッケージング構造及びその製作方法 |
CN111884613B (zh) * | 2020-06-19 | 2021-03-23 | 珠海越亚半导体股份有限公司 | 一种具有空气谐振腔的嵌埋封装结构的制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11274875A (ja) * | 1998-03-26 | 1999-10-08 | Japan Radio Co Ltd | Sawデバイス及びその製造方法 |
DE10253163B4 (de) * | 2002-11-14 | 2015-07-23 | Epcos Ag | Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung |
CN1599060A (zh) * | 2003-09-18 | 2005-03-23 | 立朗科技股份有限公司 | 具有空腔的封装构造 |
CN101594120B (zh) * | 2008-05-28 | 2012-07-25 | 上海晶赛电子有限公司 | 陶瓷封装的片式石英晶体频率器件的制造方法 |
CN201298828Y (zh) * | 2008-11-12 | 2009-08-26 | 东莞创群石英晶体有限公司 | 片式石英晶体谐振器用陶瓷基座 |
CN201887726U (zh) * | 2010-01-04 | 2011-06-29 | 姚一滨 | 多元联排复合基板、频率器件组以及频率器件 |
JP5485714B2 (ja) * | 2010-01-07 | 2014-05-07 | セイコーインスツル株式会社 | パッケージの製造方法 |
US8440012B2 (en) * | 2010-10-13 | 2013-05-14 | Rf Micro Devices, Inc. | Atomic layer deposition encapsulation for acoustic wave devices |
CN102013880A (zh) * | 2010-10-18 | 2011-04-13 | 台晶(宁波)电子有限公司 | 一种改良式振子晶圆级封装结构 |
CN202906852U (zh) * | 2012-10-24 | 2013-04-24 | 江西捷英达科技有限公司 | 抗冲击石英晶体谐振器 |
CN103346749A (zh) * | 2013-06-20 | 2013-10-09 | 电子科技大学 | 一种ltcc集成封装表面贴晶体振荡器 |
US9805966B2 (en) * | 2014-07-25 | 2017-10-31 | Akoustis, Inc. | Wafer scale packaging |
CN204031091U (zh) * | 2014-07-28 | 2014-12-17 | 广东惠伦晶体科技股份有限公司 | 一种玻璃封装的石英晶体谐振器 |
JP6449700B2 (ja) * | 2015-03-25 | 2019-01-09 | 京セラ株式会社 | 圧電デバイスの製造方法 |
CN105897210A (zh) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | 凹槽型表面声滤波芯片封装结构及其制造方法 |
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Effective date of registration: 20210421 Address after: 201600 rooms 1603 and 1604, building 21, No. 1158, Jiuting Central Road, Jiuting Town, Songjiang District, Shanghai Patentee after: Chen Chen Technology Co.,Ltd. Address before: 215123, Suzhou Industrial Park, Jiangsu, Suzhou, if waterway 388 Patentee before: ETRA SEMICONDUCTOR (SUZHOU) Co.,Ltd. |
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Address after: 311,500 Room 402, Floor 4, Electronic Equipment Industrial Park, No. 368, Baiyunyuan East Road, Fengchuan Street, Tonglu County, Hangzhou City, Zhejiang Province Patentee after: Chen Chen Technology Co.,Ltd. Address before: 201600 Rooms 1603 and 1604, Building 21, No. 1158, Jiuting Central Road, Jiuting Town, Songjiang District, Shanghai Patentee before: Chen Chen Technology Co.,Ltd. |