JP4632697B2 - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP4632697B2
JP4632697B2 JP2004180915A JP2004180915A JP4632697B2 JP 4632697 B2 JP4632697 B2 JP 4632697B2 JP 2004180915 A JP2004180915 A JP 2004180915A JP 2004180915 A JP2004180915 A JP 2004180915A JP 4632697 B2 JP4632697 B2 JP 4632697B2
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Japan
Prior art keywords
light emitting
layer
substrate
semiconductor layer
terrace
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Expired - Fee Related
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JP2004180915A
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Japanese (ja)
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JP2006005215A (ja
JP2006005215A5 (enExample
Inventor
直史 堀尾
宗弘 加藤
正彦 土谷
聡 田中
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2004180915A priority Critical patent/JP4632697B2/ja
Priority to DE102005026947A priority patent/DE102005026947A1/de
Priority to US11/154,814 priority patent/US7411220B2/en
Publication of JP2006005215A publication Critical patent/JP2006005215A/ja
Publication of JP2006005215A5 publication Critical patent/JP2006005215A5/ja
Priority to US12/031,068 priority patent/US7595206B2/en
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Publication of JP4632697B2 publication Critical patent/JP4632697B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Device Packages (AREA)
JP2004180915A 2004-06-18 2004-06-18 半導体発光素子及びその製造方法 Expired - Fee Related JP4632697B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004180915A JP4632697B2 (ja) 2004-06-18 2004-06-18 半導体発光素子及びその製造方法
DE102005026947A DE102005026947A1 (de) 2004-06-18 2005-06-10 Halbleiter-Leuchtvorrichtung und zugehöriges Herstellungsverfahren
US11/154,814 US7411220B2 (en) 2004-06-18 2005-06-17 Semiconductor light emitting device and manufacturing method thereof
US12/031,068 US7595206B2 (en) 2004-06-18 2008-02-14 Manufacturing method for semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004180915A JP4632697B2 (ja) 2004-06-18 2004-06-18 半導体発光素子及びその製造方法

Publications (3)

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JP2006005215A JP2006005215A (ja) 2006-01-05
JP2006005215A5 JP2006005215A5 (enExample) 2007-07-19
JP4632697B2 true JP4632697B2 (ja) 2011-02-16

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US (2) US7411220B2 (enExample)
JP (1) JP4632697B2 (enExample)
DE (1) DE102005026947A1 (enExample)

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Publication number Publication date
DE102005026947A1 (de) 2006-02-02
US20050281303A1 (en) 2005-12-22
US7595206B2 (en) 2009-09-29
US7411220B2 (en) 2008-08-12
JP2006005215A (ja) 2006-01-05
US20080145961A1 (en) 2008-06-19

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