JP4624023B2 - 半導体装置、及びその作製方法 - Google Patents

半導体装置、及びその作製方法 Download PDF

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Publication number
JP4624023B2
JP4624023B2 JP2004215678A JP2004215678A JP4624023B2 JP 4624023 B2 JP4624023 B2 JP 4624023B2 JP 2004215678 A JP2004215678 A JP 2004215678A JP 2004215678 A JP2004215678 A JP 2004215678A JP 4624023 B2 JP4624023 B2 JP 4624023B2
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Japan
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semiconductor film
crystalline semiconductor
film
laser beam
ridges
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Expired - Fee Related
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JP2004215678A
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Japanese (ja)
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JP2005064486A5 (enExample
JP2005064486A (ja
Inventor
博信 小路
明久 下村
将樹 古山
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004215678A priority Critical patent/JP4624023B2/ja
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Publication of JP2005064486A5 publication Critical patent/JP2005064486A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004215678A 2003-07-31 2004-07-23 半導体装置、及びその作製方法 Expired - Fee Related JP4624023B2 (ja)

Priority Applications (1)

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JP2004215678A JP4624023B2 (ja) 2003-07-31 2004-07-23 半導体装置、及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003284536 2003-07-31
JP2004215678A JP4624023B2 (ja) 2003-07-31 2004-07-23 半導体装置、及びその作製方法

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JP2005064486A JP2005064486A (ja) 2005-03-10
JP2005064486A5 JP2005064486A5 (enExample) 2007-07-12
JP4624023B2 true JP4624023B2 (ja) 2011-02-02

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JP2004215678A Expired - Fee Related JP4624023B2 (ja) 2003-07-31 2004-07-23 半導体装置、及びその作製方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5090690B2 (ja) * 2006-08-28 2012-12-05 三菱電機株式会社 半導体薄膜の製造方法、薄膜トランジスタの製造方法、及び半導体薄膜の製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260285A (ja) * 1996-03-25 1997-10-03 Sharp Corp 半導体装置の製造方法
JP4038309B2 (ja) * 1999-09-10 2008-01-23 セイコーエプソン株式会社 半導体装置の製造方法、アクティブマトリクス基板の製造方法
JP2001127302A (ja) * 1999-10-28 2001-05-11 Hitachi Ltd 半導体薄膜基板、半導体装置、半導体装置の製造方法および電子装置
JP2002151410A (ja) * 2000-08-22 2002-05-24 Sony Corp 結晶質半導体材料の製造方法および半導体装置の製造方法
JP4316149B2 (ja) * 2001-02-20 2009-08-19 シャープ株式会社 薄膜トランジスタ製造方法
JP2002353141A (ja) * 2001-03-09 2002-12-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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