JP4620981B2 - 荷電粒子ビーム装置 - Google Patents

荷電粒子ビーム装置 Download PDF

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Publication number
JP4620981B2
JP4620981B2 JP2004233286A JP2004233286A JP4620981B2 JP 4620981 B2 JP4620981 B2 JP 4620981B2 JP 2004233286 A JP2004233286 A JP 2004233286A JP 2004233286 A JP2004233286 A JP 2004233286A JP 4620981 B2 JP4620981 B2 JP 4620981B2
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JP
Japan
Prior art keywords
charged particle
particle beam
objective lens
lens
condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2004233286A
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English (en)
Japanese (ja)
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JP2006054074A5 (enExample
JP2006054074A (ja
Inventor
猛 川▲崎▼
高穂 吉田
朝則 中野
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2004233286A priority Critical patent/JP4620981B2/ja
Priority to US11/196,256 priority patent/US7223983B2/en
Publication of JP2006054074A publication Critical patent/JP2006054074A/ja
Priority to US11/802,298 priority patent/US7531799B2/en
Publication of JP2006054074A5 publication Critical patent/JP2006054074A5/ja
Application granted granted Critical
Publication of JP4620981B2 publication Critical patent/JP4620981B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0456—Supports
    • H01J2237/0458—Supports movable, i.e. for changing between differently sized apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2611—Stereoscopic measurements and/or imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
JP2004233286A 2004-08-10 2004-08-10 荷電粒子ビーム装置 Expired - Fee Related JP4620981B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004233286A JP4620981B2 (ja) 2004-08-10 2004-08-10 荷電粒子ビーム装置
US11/196,256 US7223983B2 (en) 2004-08-10 2005-08-04 Charged particle beam column
US11/802,298 US7531799B2 (en) 2004-08-10 2007-05-22 Charged particle beam column

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004233286A JP4620981B2 (ja) 2004-08-10 2004-08-10 荷電粒子ビーム装置

Publications (3)

Publication Number Publication Date
JP2006054074A JP2006054074A (ja) 2006-02-23
JP2006054074A5 JP2006054074A5 (enExample) 2007-09-20
JP4620981B2 true JP4620981B2 (ja) 2011-01-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004233286A Expired - Fee Related JP4620981B2 (ja) 2004-08-10 2004-08-10 荷電粒子ビーム装置

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Country Link
US (2) US7223983B2 (enExample)
JP (1) JP4620981B2 (enExample)

Families Citing this family (51)

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JP4275441B2 (ja) * 2003-03-31 2009-06-10 株式会社日立ハイテクノロジーズ 収差補正器付電子線装置
US7391038B2 (en) * 2006-03-21 2008-06-24 Varian Semiconductor Equipment Associates, Inc. Technique for isocentric ion beam scanning
JP4789260B2 (ja) * 2006-08-23 2011-10-12 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及びアパーチャの軸調整方法
JP5271491B2 (ja) * 2006-10-26 2013-08-21 株式会社日立ハイテクノロジーズ 電子線応用装置および試料検査方法
US7947964B2 (en) * 2006-11-21 2011-05-24 Hitachi High-Technologies Corporation Charged particle beam orbit corrector and charged particle beam apparatus
US7700915B2 (en) * 2006-11-28 2010-04-20 Canatu Oy Method, computer program and apparatus for the characterization of molecules
JP4874780B2 (ja) * 2006-12-20 2012-02-15 日本電子株式会社 走査形電子顕微鏡
US8242457B2 (en) * 2007-03-15 2012-08-14 Multibeam Corporation Charged particle optics with azimuthally-varying third-order aberrations for generation of shaped beams
JP5078431B2 (ja) * 2007-05-17 2012-11-21 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、その収差補正値算出装置、及びその収差補正プログラム
CZ298798B6 (cs) * 2007-07-30 2008-01-30 Tescan, S. R. O. Zarízení pro prostorové zobrazování vzorku v reálném case
JP5028181B2 (ja) * 2007-08-08 2012-09-19 株式会社日立ハイテクノロジーズ 収差補正器およびそれを用いた荷電粒子線装置
US10310071B1 (en) 2007-09-17 2019-06-04 The United States Of America As Represented By The Secretary Of The Army Standoff geophysical anomaly detection system and method
JP5302595B2 (ja) 2008-08-06 2013-10-02 株式会社日立ハイテクノロジーズ 傾斜観察方法および観察装置
US8581190B2 (en) * 2008-09-25 2013-11-12 Hitachi High-Technologies Corporation Charged particle beam apparatus and geometrical aberration measurement method therefor
US8129693B2 (en) 2009-06-26 2012-03-06 Carl Zeiss Nts Gmbh Charged particle beam column and method of operating same
WO2011016182A1 (ja) * 2009-08-03 2011-02-10 株式会社日立ハイテクノロジーズ 荷電粒子顕微鏡
JP5350123B2 (ja) * 2009-08-10 2013-11-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び画像表示方法
WO2011052333A1 (ja) * 2009-10-26 2011-05-05 株式会社日立ハイテクノロジーズ 走査荷電粒子線装置、及び色球面収差補正方法
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JP5378185B2 (ja) * 2009-12-08 2013-12-25 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、及び集束イオンビーム加工方法
DE102010024625A1 (de) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Verfahren zum Bearbeiten eines Objekts
EP2413345B1 (en) 2010-07-29 2013-02-20 Carl Zeiss NTS GmbH Charged particle beam system
JP5735262B2 (ja) * 2010-11-12 2015-06-17 株式会社日立ハイテクノロジーズ 荷電粒子光学装置及びレンズ収差測定方法
DE102010061178A1 (de) * 2010-12-13 2012-06-14 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Chromatischer Energiefilter
JP5364112B2 (ja) * 2011-01-25 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子線装置
EP2485239A1 (en) * 2011-02-07 2012-08-08 FEI Company Method for centering an optical element in a TEM comprising a contrast enhancing element
DE102011076893A1 (de) 2011-06-01 2012-12-06 Carl Zeiss Nts Gmbh Verfahren und Teilchenstrahlgerät zum Fokussieren eines Teilchenstrahls
JP6037693B2 (ja) * 2012-07-23 2016-12-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5993668B2 (ja) * 2012-09-05 2016-09-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US8921782B2 (en) * 2012-11-30 2014-12-30 Kla-Tencor Corporation Tilt-imaging scanning electron microscope
JP6080540B2 (ja) * 2012-12-26 2017-02-15 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置
JP6134145B2 (ja) 2013-01-24 2017-05-24 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線装置における軌道修正方法
JP6178699B2 (ja) * 2013-11-11 2017-08-09 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6320186B2 (ja) * 2014-06-16 2018-05-09 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
US9583306B2 (en) 2014-12-09 2017-02-28 Hermes Microvision Inc. Swing objective lens
KR101693536B1 (ko) * 2015-11-23 2017-01-06 한국표준과학연구원 하전입자선 장치
CZ306807B6 (cs) 2016-05-21 2017-07-12 Tescan Brno, S.R.O. Rastrovací elektronový mikroskop a způsob jeho provozu
WO2018037474A1 (ja) * 2016-08-23 2018-03-01 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線装置の収差補正方法
US10157727B2 (en) * 2017-03-02 2018-12-18 Fei Company Aberration measurement in a charged particle microscope
KR20240097977A (ko) 2017-09-29 2024-06-27 에이에스엠엘 네델란즈 비.브이. 하전 입자 빔 검사를 위한 샘플 사전-충전 방법들 및 장치들
US11164716B2 (en) * 2018-03-29 2021-11-02 Hitachi High-Tech Corporation Charged particle beam device
JP2020149767A (ja) 2019-03-11 2020-09-17 株式会社日立ハイテク 荷電粒子線装置
JP7292968B2 (ja) * 2019-05-14 2023-06-19 株式会社ニューフレアテクノロジー 荷電粒子ビーム装置
CZ309537B6 (cs) * 2020-04-23 2023-03-29 Tescan Brno, S.R.O. Způsob zobrazení vzorku
JP7353473B2 (ja) * 2020-04-23 2023-09-29 株式会社日立ハイテク 荷電粒子銃および荷電粒子ビームシステム
DE102020113502A1 (de) * 2020-05-19 2021-11-25 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Teilchenstrahlmikroskops
JP7647271B2 (ja) * 2021-04-13 2025-03-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置
JP7407785B2 (ja) * 2021-10-27 2024-01-04 日本電子株式会社 電子顕微鏡および画像取得方法
CN116246924A (zh) * 2023-03-27 2023-06-09 聚束科技（北京）有限公司 电子束控制装置及方法
CN116798841B (zh) * 2023-07-14 2024-12-03 无锡亘芯悦科技有限公司 一种束张角可调的扫描电子束成像系统及电子束控制方法
CN119314844B (zh) * 2024-12-16 2025-04-11 东方晶源微电子科技(北京)股份有限公司 带电粒子束成像装置

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Also Published As

Publication number Publication date
US7531799B2 (en) 2009-05-12
US20060033037A1 (en) 2006-02-16
JP2006054074A (ja) 2006-02-23
US7223983B2 (en) 2007-05-29
US20070221860A1 (en) 2007-09-27

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