JP4609917B2 - 窒化アルミニウムガリウム層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子 - Google Patents

窒化アルミニウムガリウム層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子 Download PDF

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JP4609917B2
JP4609917B2 JP2002115902A JP2002115902A JP4609917B2 JP 4609917 B2 JP4609917 B2 JP 4609917B2 JP 2002115902 A JP2002115902 A JP 2002115902A JP 2002115902 A JP2002115902 A JP 2002115902A JP 4609917 B2 JP4609917 B2 JP 4609917B2
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layer
cladding layer
group iii
type cladding
nitride semiconductor
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JP2003309074A (ja
JP2003309074A5 (enrdf_load_stackoverflow
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朗浩 松瀬
峰夫 奥山
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Resonac Holdings Corp
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Showa Denko KK
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JP2002115902A 2002-04-18 2002-04-18 窒化アルミニウムガリウム層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子 Expired - Lifetime JP4609917B2 (ja)

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JP2002115902A JP4609917B2 (ja) 2002-04-18 2002-04-18 窒化アルミニウムガリウム層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子

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JP2003309074A5 JP2003309074A5 (enrdf_load_stackoverflow) 2005-05-19
JP4609917B2 true JP4609917B2 (ja) 2011-01-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729575B2 (en) 2011-03-08 2014-05-20 Kabushiki Kaisha Toshiba Semiconductor light emitting device and manufacturing method of the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303258A (ja) * 2005-04-22 2006-11-02 Ishikawajima Harima Heavy Ind Co Ltd ｐ型窒化物半導体の成長方法
JP2007288052A (ja) * 2006-04-19 2007-11-01 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2008311579A (ja) * 2007-06-18 2008-12-25 Sharp Corp 窒化物半導体発光素子の製造方法
WO2010029720A1 (ja) 2008-09-09 2010-03-18 パナソニック株式会社 窒化物系半導体発光素子およびその製造方法
JP5200829B2 (ja) * 2008-09-30 2013-06-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729575B2 (en) 2011-03-08 2014-05-20 Kabushiki Kaisha Toshiba Semiconductor light emitting device and manufacturing method of the same

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