JP4582542B2 - ダイヤモンド電界効果トランジスタ及びその製造方法 - Google Patents

ダイヤモンド電界効果トランジスタ及びその製造方法 Download PDF

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Publication number
JP4582542B2
JP4582542B2 JP2005026965A JP2005026965A JP4582542B2 JP 4582542 B2 JP4582542 B2 JP 4582542B2 JP 2005026965 A JP2005026965 A JP 2005026965A JP 2005026965 A JP2005026965 A JP 2005026965A JP 4582542 B2 JP4582542 B2 JP 4582542B2
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layer
diamond
region
insulating film
gate insulating
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JP2005026965A
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Japanese (ja)
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JP2006216716A5 (enExample
JP2006216716A (ja
Inventor
宏司 小橋
嘉宏 横田
信之 川上
和志 林
武史 橘
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Kobe Steel Ltd
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Kobe Steel Ltd
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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005026965A 2005-02-02 2005-02-02 ダイヤモンド電界効果トランジスタ及びその製造方法 Expired - Fee Related JP4582542B2 (ja)

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JP2005026965A JP4582542B2 (ja) 2005-02-02 2005-02-02 ダイヤモンド電界効果トランジスタ及びその製造方法

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JP2005026965A JP4582542B2 (ja) 2005-02-02 2005-02-02 ダイヤモンド電界効果トランジスタ及びその製造方法

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JP2006216716A JP2006216716A (ja) 2006-08-17
JP2006216716A5 JP2006216716A5 (enExample) 2008-03-13
JP4582542B2 true JP4582542B2 (ja) 2010-11-17

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4911943B2 (ja) * 2005-10-12 2012-04-04 株式会社神戸製鋼所 絶縁ゲート型電界効果トランジスタ
WO2008090514A2 (en) 2007-01-22 2008-07-31 Element Six Limited Diamond electronic devices and methods for their manufacture
JP5042006B2 (ja) * 2007-12-25 2012-10-03 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ
JP5112404B2 (ja) * 2009-09-01 2013-01-09 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ
JP5866769B2 (ja) * 2011-02-16 2016-02-17 富士通株式会社 半導体装置、電源装置及び増幅器
KR101919424B1 (ko) 2012-07-23 2018-11-19 삼성전자주식회사 트랜지스터 및 그 제조방법
JP2017045897A (ja) * 2015-08-27 2017-03-02 学校法人早稲田大学 ダイヤモンド電界効果トランジスタ及びその製造方法
US10367086B2 (en) 2017-06-14 2019-07-30 Hrl Laboratories, Llc Lateral fin static induction transistor
CN107393815B (zh) * 2017-09-05 2019-11-19 中国电子科技集团公司第十三研究所 金刚石基场效应晶体管的制备方法及场效应晶体管
JP7491547B2 (ja) * 2020-03-10 2024-05-28 学校法人早稲田大学 ダイヤモンド電界効果トランジスタ及びその製造方法
CN115244711B (zh) 2020-04-17 2023-12-12 Hrl实验室有限责任公司 垂直金刚石mosfet及其制造方法
CN113659002A (zh) * 2020-05-12 2021-11-16 内蒙古工业大学 具有AlOX保护层的金刚石基MISFET器件及其制备方法
CN114501783A (zh) * 2022-02-21 2022-05-13 太原理工大学 一种高热导率耐磨耐腐蚀的金刚石电路板及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218402A (ja) * 1992-01-31 1993-08-27 Fuji Electric Co Ltd 半導体素子およびその製造方法
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
JPH0757904A (ja) * 1993-08-13 1995-03-03 Kobe Steel Ltd ダイヤモンド半導体装置
JP3714803B2 (ja) * 1998-10-09 2005-11-09 株式会社神戸製鋼所 ダイヤモンド電界効果トランジスタの製造方法
JP3148982B2 (ja) * 1998-11-11 2001-03-26 工業技術院長 半導体装置及びその製造方法
JP4493796B2 (ja) * 2000-03-30 2010-06-30 東京エレクトロン株式会社 誘電体膜の形成方法
JP2002057167A (ja) * 2000-08-10 2002-02-22 Kobe Steel Ltd 半導体素子及びその製造方法

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