JP2009049099A - 炭化珪素半導体装置の製造方法 - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229960001730 nitrous oxide Drugs 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 11
- 230000005669 field effect Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052774 Proactinium Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】炭化珪素半導体基板2上に、熱酸化法により、0.5nm〜2nmの範囲内の厚みを有する酸化珪素5を形成する。更に、酸化珪素5の上に堆積法によって酸化膜6を形成して、ゲート絶縁膜としての積層酸化膜7を得る。その上で、酸化膜6の堆積温度よりも高温で、且つ、酸素濃度が0.05Pa以上で5Pa以下の範囲内に制御された減圧の酸素雰囲気下で、積層酸化膜7に対して熱処理を行うことで、ゲート絶縁膜を形成する。
【選択図】図2
Description
本実施の形態に係る炭化珪素半導体装置の製造時に於けるPDA処理は、酸化膜の堆積後に、その堆積温度よりも高温で、且つ、大気圧よりも低い減圧(好ましくは0.05Pa以上5Pa以下)の酸素雰囲気下で熱処理を行うものである。以下、図面を参照しつつ、本実施の形態の上記特徴点を記載する。
以上、本発明の実施の形態を詳細に開示し記述したが、以上の記述は本発明の適用可能な局面を例示したものであって、本発明はこれに限定されるものではない。即ち、記述した局面に対する様々な修正や変形例を、この発明の範囲から逸脱することの無い範囲内で考えることが可能である。
Claims (6)
- 炭化珪素基板上に堆積法によって酸化膜を形成し、
前記酸化膜の堆積後に、その堆積温度よりも高温で、且つ、大気圧よりも低い減圧の酸素雰囲気下で、前記酸化膜に対して熱処理を行うことにより、ゲート絶縁膜を形成することを特徴とする、
炭化珪素半導体装置の製造方法。 - 炭化珪素基板上に熱酸化法により0.5nm〜2nmの範囲内の厚みを有する酸化珪素を形成し、
前記酸化珪素の上に堆積法によって酸化膜を形成し、
前記酸化膜の堆積後に、その堆積温度よりも高温で、且つ、大気圧よりも低い減圧の酸素雰囲気下で積層酸化膜に対して熱処理を行うことにより、ゲート絶縁膜を形成することを特徴とする、
炭化珪素半導体装置の製造方法。 - 請求項1又は2に記載の炭化珪素半導体装置の製造方法であって、
前記酸素雰囲気に代えて、前記酸化膜の堆積温度よりも高温で、且つ、大気圧よりも低い減圧の一酸化二窒素雰囲気を用いることを特徴とする、
炭化珪素半導体装置の製造方法。 - 請求項1又は2に記載の炭化珪素半導体装置の製造方法であって、
酸素圧力が0.05Pa以上で5Pa以下の範囲内にあることを特徴とする、
炭化珪素半導体装置の製造方法。 - 請求項1乃至4の何れかに記載の炭化珪素半導体装置の製造方法であって、
前記堆積法による酸化膜が酸化アルミニュームであることを特徴とする、
炭化珪素半導体装置の製造方法。 - 請求項1乃至4の何れかに記載の炭化珪素半導体装置の製造方法であって、
前記堆積法による酸化膜が酸化珪素であることを特徴とする、
炭化珪素半導体装置の製造方法。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010251589A (ja) * | 2009-04-17 | 2010-11-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
JP2010263125A (ja) * | 2009-05-08 | 2010-11-18 | Tokyo Electron Ltd | 成膜方法、ゲート電極構造の形成方法及び処理装置 |
JP2012151400A (ja) * | 2011-01-21 | 2012-08-09 | Mitsubishi Electric Corp | SiC半導体装置、SiC半導体装置の製造方法 |
JP2013008894A (ja) * | 2011-06-27 | 2013-01-10 | Saitama Univ | 炭化珪素半導体を用いたmos構造およびその酸化膜形成方法 |
CN110828475A (zh) * | 2018-08-13 | 2020-02-21 | 乐金显示有限公司 | 薄膜晶体管基板和显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0347000A (ja) * | 1989-07-12 | 1991-02-28 | Toyota Autom Loom Works Ltd | ティルトシリンダ用コントロールバルブ |
JPH11233760A (ja) * | 1998-02-10 | 1999-08-27 | Japan Atom Energy Res Inst | 金属、酸化膜及び炭化珪素半導体からなる積層構造体 |
JPH11297712A (ja) * | 1998-04-10 | 1999-10-29 | Sanyo Electric Co Ltd | 化合物膜の形成方法及び半導体素子の製造方法 |
JP2002222945A (ja) * | 2001-01-29 | 2002-08-09 | Matsushita Electric Ind Co Ltd | 絶縁ゲート型半導体装置のゲート酸化膜の製造方法 |
JP2005166930A (ja) * | 2003-12-02 | 2005-06-23 | Matsushita Electric Ind Co Ltd | SiC−MISFET及びその製造方法 |
JP2006210818A (ja) * | 2005-01-31 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JP2006216918A (ja) * | 2005-02-07 | 2006-08-17 | Kyoto Univ | 半導体素子の製造方法 |
-
2007
- 2007-08-16 JP JP2007212141A patent/JP5072482B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0347000A (ja) * | 1989-07-12 | 1991-02-28 | Toyota Autom Loom Works Ltd | ティルトシリンダ用コントロールバルブ |
JPH11233760A (ja) * | 1998-02-10 | 1999-08-27 | Japan Atom Energy Res Inst | 金属、酸化膜及び炭化珪素半導体からなる積層構造体 |
JPH11297712A (ja) * | 1998-04-10 | 1999-10-29 | Sanyo Electric Co Ltd | 化合物膜の形成方法及び半導体素子の製造方法 |
JP2002222945A (ja) * | 2001-01-29 | 2002-08-09 | Matsushita Electric Ind Co Ltd | 絶縁ゲート型半導体装置のゲート酸化膜の製造方法 |
JP2005166930A (ja) * | 2003-12-02 | 2005-06-23 | Matsushita Electric Ind Co Ltd | SiC−MISFET及びその製造方法 |
JP2006210818A (ja) * | 2005-01-31 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JP2006216918A (ja) * | 2005-02-07 | 2006-08-17 | Kyoto Univ | 半導体素子の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010251589A (ja) * | 2009-04-17 | 2010-11-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
JP2010263125A (ja) * | 2009-05-08 | 2010-11-18 | Tokyo Electron Ltd | 成膜方法、ゲート電極構造の形成方法及び処理装置 |
JP2012151400A (ja) * | 2011-01-21 | 2012-08-09 | Mitsubishi Electric Corp | SiC半導体装置、SiC半導体装置の製造方法 |
JP2013008894A (ja) * | 2011-06-27 | 2013-01-10 | Saitama Univ | 炭化珪素半導体を用いたmos構造およびその酸化膜形成方法 |
CN110828475A (zh) * | 2018-08-13 | 2020-02-21 | 乐金显示有限公司 | 薄膜晶体管基板和显示装置 |
CN110828475B (zh) * | 2018-08-13 | 2024-03-29 | 乐金显示有限公司 | 薄膜晶体管基板和显示装置 |
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