JP2010251589A - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 100
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 128
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 64
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 58
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
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- 238000005121 nitriding Methods 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 15
- 239000003963 antioxidant agent Substances 0.000 claims description 14
- 230000003078 antioxidant effect Effects 0.000 claims description 14
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229960001730 nitrous oxide Drugs 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 235000013842 nitrous oxide Nutrition 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 31
- 238000006243 chemical reaction Methods 0.000 abstract description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
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- 230000003064 anti-oxidating effect Effects 0.000 description 4
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- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】二酸化珪素膜51の形成後、CVD法により、二酸化珪素膜51上に酸窒化珪素膜61を形成する。その後、酸窒化珪素膜61が堆積された炭化珪素基体10を窒化処理反応炉に導入し、窒素酸化物ガス雰囲気中で窒化処理を行う。
【選択図】図7
Description
図1は、本発明の実施の形態1に係る炭化珪素半導体装置の製造方法によって製造されるMOSFET(MOS field effect transistor)100の断面構造を示す図である。
実施の形態1の炭化珪素半導体装置の製造方法においては、ゲート酸化膜5を形成するための二酸化珪素膜51上に酸窒化珪素膜61を形成した状態で窒化処理を行い、ゲート酸化膜5上に酸化防止絶縁膜6が形成された状態でゲート電極7を成膜する方法を示したが、実施の形態2に係る炭化珪素半導体装置の製造方法においては、窒化処理後に酸窒化珪素膜61を除去することを特徴とするものである。
Claims (7)
- 炭化珪素層を備える炭化珪素半導体装置の製造方法であって、
(a)炭化珪素層に接するように二酸化珪素膜を形成する工程と、
(b)前記二酸化珪素膜上に、該二酸化珪素膜中よりも膜中での酸素の拡散に要するエネルギーが高い酸化防止絶縁膜を形成する工程と、
(c)前記酸化防止絶縁膜を形成した後、窒素酸化物ガスを含んだ雰囲気中で熱処理して、前記二酸化珪素膜と前記炭化珪素層との界面を窒化する工程と、を備える、炭化珪素半導体装置の製造方法。 - 前記工程(b)は、
酸窒化珪素、窒化珪素、酸化アルミニウム、酸化クロム、酸化チタニウム、酸化ジルコニウムおよび酸化タンタルから選択される何れかの絶縁物で前記酸化防止絶縁膜を形成する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(a)は
前記炭化珪素層を大気、酸素ガス雰囲気および水を含んだ水蒸気雰囲気の何れかの雰囲気に曝して加熱することで前記二酸化珪素膜を形成する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(a)は、
化学気相成長法により、前記二酸化珪素膜を形成する工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(c)は、
前記窒素酸化物ガスとして、一酸化窒素(NO)ガス、一酸化二窒素(N2O)ガス、および二酸化窒素(NO2)ガスから選択された少なくとも1種のガス含んだ雰囲気中で前記熱処理を行う工程を含む、請求項1記載の炭化珪素半導体装置の製造方法。 - 前記工程(c)の後に、前記酸化防止絶縁膜を除去する工程をさらに備える、請求項1記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素半導体装置はMOSFETを含み、
前記二酸化珪素膜は、前記MOSFETのゲート酸化膜を構成する、請求項1記載の炭化珪素半導体装置の製造方法。
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Cited By (5)
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WO2013042225A1 (ja) * | 2011-09-21 | 2013-03-28 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2013162073A (ja) * | 2012-02-08 | 2013-08-19 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
JPWO2013042225A1 (ja) * | 2011-09-21 | 2015-03-26 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2016115860A (ja) * | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JPWO2014155651A1 (ja) * | 2013-03-29 | 2017-02-16 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
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JP2003086792A (ja) * | 2001-09-10 | 2003-03-20 | National Institute Of Advanced Industrial & Technology | 半導体装置の作製法 |
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JP2009049099A (ja) * | 2007-08-16 | 2009-03-05 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
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JP2003086792A (ja) * | 2001-09-10 | 2003-03-20 | National Institute Of Advanced Industrial & Technology | 半導体装置の作製法 |
WO2003047000A1 (fr) * | 2001-11-30 | 2003-06-05 | Matsushita Electric Industrial Co., Ltd. | Dispositif à semi-conducteur et procédé de fabrication |
JP2005109396A (ja) * | 2003-10-02 | 2005-04-21 | National Institute Of Advanced Industrial & Technology | 半導体装置の製造方法および絶縁膜形成装置 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013042225A1 (ja) * | 2011-09-21 | 2013-03-28 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JPWO2013042225A1 (ja) * | 2011-09-21 | 2015-03-26 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
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JP2013162073A (ja) * | 2012-02-08 | 2013-08-19 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
JPWO2014155651A1 (ja) * | 2013-03-29 | 2017-02-16 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
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JP2016115860A (ja) * | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
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