JP2006216716A5 - - Google Patents
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- Publication number
- JP2006216716A5 JP2006216716A5 JP2005026965A JP2005026965A JP2006216716A5 JP 2006216716 A5 JP2006216716 A5 JP 2006216716A5 JP 2005026965 A JP2005026965 A JP 2005026965A JP 2005026965 A JP2005026965 A JP 2005026965A JP 2006216716 A5 JP2006216716 A5 JP 2006216716A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diamond
- region
- channel region
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 claims 19
- 239000010432 diamond Substances 0.000 claims 19
- 230000005669 field effect Effects 0.000 claims 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 229910002113 barium titanate Inorganic materials 0.000 claims 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005026965A JP4582542B2 (ja) | 2005-02-02 | 2005-02-02 | ダイヤモンド電界効果トランジスタ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005026965A JP4582542B2 (ja) | 2005-02-02 | 2005-02-02 | ダイヤモンド電界効果トランジスタ及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006216716A JP2006216716A (ja) | 2006-08-17 |
| JP2006216716A5 true JP2006216716A5 (enExample) | 2008-03-13 |
| JP4582542B2 JP4582542B2 (ja) | 2010-11-17 |
Family
ID=36979680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005026965A Expired - Fee Related JP4582542B2 (ja) | 2005-02-02 | 2005-02-02 | ダイヤモンド電界効果トランジスタ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4582542B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4911943B2 (ja) * | 2005-10-12 | 2012-04-04 | 株式会社神戸製鋼所 | 絶縁ゲート型電界効果トランジスタ |
| WO2008090514A2 (en) | 2007-01-22 | 2008-07-31 | Element Six Limited | Diamond electronic devices and methods for their manufacture |
| JP5042006B2 (ja) * | 2007-12-25 | 2012-10-03 | 日本電信電話株式会社 | ダイヤモンド電界効果トランジスタ |
| JP5112404B2 (ja) * | 2009-09-01 | 2013-01-09 | 日本電信電話株式会社 | ダイヤモンド電界効果トランジスタ |
| JP5866769B2 (ja) * | 2011-02-16 | 2016-02-17 | 富士通株式会社 | 半導体装置、電源装置及び増幅器 |
| KR101919424B1 (ko) | 2012-07-23 | 2018-11-19 | 삼성전자주식회사 | 트랜지스터 및 그 제조방법 |
| JP2017045897A (ja) * | 2015-08-27 | 2017-03-02 | 学校法人早稲田大学 | ダイヤモンド電界効果トランジスタ及びその製造方法 |
| US10367086B2 (en) | 2017-06-14 | 2019-07-30 | Hrl Laboratories, Llc | Lateral fin static induction transistor |
| CN107393815B (zh) * | 2017-09-05 | 2019-11-19 | 中国电子科技集团公司第十三研究所 | 金刚石基场效应晶体管的制备方法及场效应晶体管 |
| JP7491547B2 (ja) * | 2020-03-10 | 2024-05-28 | 学校法人早稲田大学 | ダイヤモンド電界効果トランジスタ及びその製造方法 |
| CN115244711B (zh) | 2020-04-17 | 2023-12-12 | Hrl实验室有限责任公司 | 垂直金刚石mosfet及其制造方法 |
| CN113659002A (zh) * | 2020-05-12 | 2021-11-16 | 内蒙古工业大学 | 具有AlOX保护层的金刚石基MISFET器件及其制备方法 |
| CN114501783A (zh) * | 2022-02-21 | 2022-05-13 | 太原理工大学 | 一种高热导率耐磨耐腐蚀的金刚石电路板及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05218402A (ja) * | 1992-01-31 | 1993-08-27 | Fuji Electric Co Ltd | 半導体素子およびその製造方法 |
| US5371383A (en) * | 1993-05-14 | 1994-12-06 | Kobe Steel Usa Inc. | Highly oriented diamond film field-effect transistor |
| JPH0757904A (ja) * | 1993-08-13 | 1995-03-03 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
| JP3714803B2 (ja) * | 1998-10-09 | 2005-11-09 | 株式会社神戸製鋼所 | ダイヤモンド電界効果トランジスタの製造方法 |
| JP3148982B2 (ja) * | 1998-11-11 | 2001-03-26 | 工業技術院長 | 半導体装置及びその製造方法 |
| JP4493796B2 (ja) * | 2000-03-30 | 2010-06-30 | 東京エレクトロン株式会社 | 誘電体膜の形成方法 |
| JP2002057167A (ja) * | 2000-08-10 | 2002-02-22 | Kobe Steel Ltd | 半導体素子及びその製造方法 |
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2005
- 2005-02-02 JP JP2005026965A patent/JP4582542B2/ja not_active Expired - Fee Related