JP4572604B2 - 半導体発光素子及びそれを用いた発光装置 - Google Patents

半導体発光素子及びそれを用いた発光装置 Download PDF

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Publication number
JP4572604B2
JP4572604B2 JP2004195074A JP2004195074A JP4572604B2 JP 4572604 B2 JP4572604 B2 JP 4572604B2 JP 2004195074 A JP2004195074 A JP 2004195074A JP 2004195074 A JP2004195074 A JP 2004195074A JP 4572604 B2 JP4572604 B2 JP 4572604B2
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Prior art keywords
electrode
light emitting
layer
light
conductivity type
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Expired - Fee Related
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JP2004195074A
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English (en)
Japanese (ja)
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JP2005039264A (ja
JP2005039264A5 (enrdf_load_stackoverflow
Inventor
大輔 三賀
善之 粟飯原
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Nichia Corp
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Nichia Corp
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Priority to JP2004195074A priority Critical patent/JP4572604B2/ja
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Publication of JP2005039264A5 publication Critical patent/JP2005039264A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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JP2004195074A 2003-06-30 2004-06-30 半導体発光素子及びそれを用いた発光装置 Expired - Fee Related JP4572604B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004195074A JP4572604B2 (ja) 2003-06-30 2004-06-30 半導体発光素子及びそれを用いた発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003188121 2003-06-30
JP2004195074A JP4572604B2 (ja) 2003-06-30 2004-06-30 半導体発光素子及びそれを用いた発光装置

Publications (3)

Publication Number Publication Date
JP2005039264A JP2005039264A (ja) 2005-02-10
JP2005039264A5 JP2005039264A5 (enrdf_load_stackoverflow) 2007-07-19
JP4572604B2 true JP4572604B2 (ja) 2010-11-04

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JP (1) JP4572604B2 (enrdf_load_stackoverflow)

Families Citing this family (35)

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JP2006228855A (ja) * 2005-02-16 2006-08-31 Rohm Co Ltd 半導体発光素子およびその製法
JP2006237386A (ja) * 2005-02-25 2006-09-07 Sanyo Electric Co Ltd 窒化物系半導体発光ダイオード
JP4956902B2 (ja) * 2005-03-18 2012-06-20 三菱化学株式会社 ＧａＮ系発光ダイオードおよびそれを用いた発光装置
JP4787562B2 (ja) * 2005-07-29 2011-10-05 昭和電工株式会社 ｐｎ接合型発光ダイオード
JP4787561B2 (ja) * 2005-07-29 2011-10-05 昭和電工株式会社 ｐｎ接合型発光ダイオード
WO2007029859A1 (en) * 2005-09-08 2007-03-15 Showa Denko K.K. Electrode for semiconductor light emitting device
JP4918238B2 (ja) * 2005-09-13 2012-04-18 昭和電工株式会社 発光装置
EP1925037A4 (en) * 2005-09-13 2011-10-26 Showa Denko Kk LIGHT-EMITTING DEVICE
JP4952884B2 (ja) 2006-01-24 2012-06-13 ソニー株式会社 半導体発光装置および半導体発光装置組立体
JP2007287851A (ja) * 2006-04-14 2007-11-01 Toyoda Gosei Co Ltd 光通信に用いる発光素子およびこれを用いた通信装置
JP5045001B2 (ja) * 2006-06-22 2012-10-10 日亜化学工業株式会社 半導体発光素子
JP5719496B2 (ja) * 2006-06-28 2015-05-20 日亜化学工業株式会社 半導体発光素子及び発光装置、及び半導体発光素子の製造方法
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
KR101518858B1 (ko) 2008-12-03 2015-05-13 삼성전자주식회사 반도체 발광소자 및 그 제조방법
WO2010146783A1 (ja) * 2009-06-15 2010-12-23 パナソニック株式会社 半導体発光装置、発光モジュール、および照明装置
KR101081166B1 (ko) * 2009-09-23 2011-11-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
US9324691B2 (en) 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
JP5443286B2 (ja) 2009-12-24 2014-03-19 スタンレー電気株式会社 フェイスアップ型光半導体装置
TWI466284B (zh) * 2010-07-02 2014-12-21 Epistar Corp 光電元件
KR101740534B1 (ko) * 2010-08-09 2017-06-08 서울바이오시스 주식회사 전극 연장부를 갖는 발광 다이오드
WO2012057469A2 (ko) * 2010-10-25 2012-05-03 주식회사 세미콘라이트 반도체 발광소자
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
JP5433609B2 (ja) * 2011-03-03 2014-03-05 株式会社東芝 半導体発光素子及びその製造方法
JP2012186195A (ja) 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP5479391B2 (ja) * 2011-03-08 2014-04-23 株式会社東芝 半導体発光素子及びその製造方法
JP5549629B2 (ja) * 2011-03-30 2014-07-16 サンケン電気株式会社 発光素子
JP5304855B2 (ja) * 2011-08-12 2013-10-02 三菱化学株式会社 ＧａＮ系発光ダイオードおよびそれを用いた発光装置
KR101883842B1 (ko) * 2011-12-26 2018-08-01 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
JP6307703B2 (ja) 2013-05-31 2018-04-11 パナソニックＩｐマネジメント株式会社 波長変換素子、波長変換素子を備えた発光装置、発光装置を備えた車両、および波長変換素子の製造方法
JP2015028984A (ja) 2013-07-30 2015-02-12 日亜化学工業株式会社 半導体発光素子
JP6149878B2 (ja) 2015-02-13 2017-06-21 日亜化学工業株式会社 発光素子
WO2016129873A2 (ko) * 2015-02-13 2016-08-18 서울바이오시스 주식회사 발광소자 및 발광 다이오드
KR102688853B1 (ko) 2018-07-18 2024-07-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US12062737B2 (en) 2020-12-17 2024-08-13 Samsung Electronics Co., Ltd. LED chip and display apparatus including the same
JP7299515B2 (ja) * 2021-06-01 2023-06-28 日亜化学工業株式会社 発光素子

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JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP3576963B2 (ja) * 2000-11-24 2004-10-13 三菱電線工業株式会社 半導体発光素子
EP1394864B1 (en) * 2001-04-20 2016-08-03 Nichia Corporation Light emitting device

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