JP4572102B2 - 状態の切り換えを容易化するための加熱式mramセル - Google Patents
状態の切り換えを容易化するための加熱式mramセル Download PDFInfo
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- JP4572102B2 JP4572102B2 JP2004313278A JP2004313278A JP4572102B2 JP 4572102 B2 JP4572102 B2 JP 4572102B2 JP 2004313278 A JP2004313278 A JP 2004313278A JP 2004313278 A JP2004313278 A JP 2004313278A JP 4572102 B2 JP4572102 B2 JP 4572102B2
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- 230000005291 magnetic effect Effects 0.000 claims description 76
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 description 53
- 239000000463 material Substances 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 230000005641 tunneling Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Description
102、202、302、402 磁気メモリセル
104、204、312 基準層
106、206、310 誘電体層
108、208、308 データ層
110、112、210、306、406 ワード線
114、212、304、404 ビット線
116、214 スペーサ
Claims (2)
- 磁気ランダムアクセスメモリ(MRAM)デバイス(100)であって、
データを種々のインピーダンス値として格納する磁気メモリセル(102)のアレイと、
前記磁気メモリセル(102)のアレイ内のデータに選択的にアクセスするためのビット線およびワード線(110、112、114)のグリッドと、及び
前記グリッド内において、それぞれ前記磁気メモリセル(102)と直列に配置される、複数の対応する抵抗器(116)とを含み、
前記抵抗器(116)は、断熱性の中心部と前記中心部を囲む導電性の周辺部とを有し、前記周辺部は、前記中心部を囲む面で、前記メモリセルまたは前記ビット線と接続されたことを特徴とする磁気ランダムアクセスメモリデバイス(100)。 - 磁気ランダムアクセスメモリ(MRAM)デバイス(200)であって、
データを種々のインピーダンス値として格納する磁気メモリセル(202)のアレイと、
前記磁気メモリセル(202)のアレイ内のデータに選択的にアクセスするためのビット線およびワード線(210、212)のグリッドと、及び
前記グリッド内において、それぞれ前記磁気メモリセル(202)と直列に配置される、複数の対応する抵抗器(214)とを含み、
前記抵抗器(214)は、導電性の中心部と前記中心部を囲む断熱性を有する絶縁性の周辺部とを有し、前記中心部は、前記周辺部が前記中心部を囲む面で、前記メモリセルと接続されたことを特徴とする磁気ランダムアクセスメモリデバイス(200)。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/698,501 US7522446B2 (en) | 2003-10-31 | 2003-10-31 | Heating MRAM cells to ease state switching |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005136419A JP2005136419A (ja) | 2005-05-26 |
JP4572102B2 true JP4572102B2 (ja) | 2010-10-27 |
Family
ID=34550651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004313278A Active JP4572102B2 (ja) | 2003-10-31 | 2004-10-28 | 状態の切り換えを容易化するための加熱式mramセル |
Country Status (5)
Country | Link |
---|---|
US (1) | US7522446B2 (ja) |
JP (1) | JP4572102B2 (ja) |
CN (1) | CN1612263B (ja) |
DE (1) | DE102004033159B4 (ja) |
TW (1) | TWI341533B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2860910B1 (fr) * | 2003-10-10 | 2006-02-10 | Commissariat Energie Atomique | Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif |
US7102921B2 (en) * | 2004-05-11 | 2006-09-05 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
US7547480B2 (en) * | 2005-10-28 | 2009-06-16 | Everspin Technologies, Inc. | Magnetic tunnel junction pressure sensors and methods |
JP2009010264A (ja) * | 2007-06-29 | 2009-01-15 | Toshiba Corp | 抵抗変化メモリ装置及び集積回路装置 |
US8358153B2 (en) | 2010-05-19 | 2013-01-22 | International Business Machines Corporation | Magnetic logic circuits formed with tapered magnetic wires |
US8405171B2 (en) | 2010-11-16 | 2013-03-26 | Seagate Technology Llc | Memory cell with phonon-blocking insulating layer |
US9042164B2 (en) | 2012-03-26 | 2015-05-26 | Honeywell International Inc. | Anti-tampering devices and techniques for magnetoresistive random access memory |
US8730715B2 (en) | 2012-03-26 | 2014-05-20 | Honeywell International Inc. | Tamper-resistant MRAM utilizing chemical alteration |
US9196828B2 (en) | 2012-06-25 | 2015-11-24 | Macronix International Co., Ltd. | Resistive memory and fabricating method thereof |
US9070860B2 (en) * | 2012-06-25 | 2015-06-30 | Macronix International Co. Ltd. | Resistance memory cell and operation method thereof |
KR102473663B1 (ko) * | 2015-10-01 | 2022-12-02 | 삼성전자주식회사 | 자기 터널 접합 구조체를 포함하는 반도체 소자 및 그의 형성 방법 |
US11189790B2 (en) | 2016-09-30 | 2021-11-30 | Intel Corporation | Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells and the resulting structures |
JP2019165139A (ja) | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 記憶装置および記憶装置の製造方法 |
JP7192611B2 (ja) * | 2019-03-28 | 2022-12-20 | Tdk株式会社 | 記憶素子、半導体装置、磁気記録アレイ及び記憶素子の製造方法 |
Citations (4)
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JP2002245774A (ja) * | 2001-01-11 | 2002-08-30 | Hewlett Packard Co <Hp> | 熱を利用した切替えを実行する情報記憶装置 |
JP2003060173A (ja) * | 2001-08-21 | 2003-02-28 | Canon Inc | 強磁性体メモリの熱補助駆動方法 |
JP2003133527A (ja) * | 2001-10-24 | 2003-05-09 | Sony Corp | 磁気メモリ装置、その書き込み方法およびその製造方法 |
JP2003298025A (ja) * | 2002-03-29 | 2003-10-17 | Toshiba Corp | 磁気記憶装置 |
Family Cites Families (21)
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JP2574911B2 (ja) * | 1990-01-10 | 1997-01-22 | シャープ株式会社 | 光磁気記録方法 |
JPH0423293A (ja) * | 1990-05-18 | 1992-01-27 | Toshiba Corp | 磁気メモリセル及び磁性薄膜 |
US5444651A (en) * | 1991-10-30 | 1995-08-22 | Sharp Kabushiki Kaisha | Non-volatile memory device |
US5396455A (en) * | 1993-04-30 | 1995-03-07 | International Business Machines Corporation | Magnetic non-volatile random access memory |
JPH0927154A (ja) * | 1995-07-10 | 1997-01-28 | Fujitsu Ltd | 光磁気ディスク装置 |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
JP3585674B2 (ja) * | 1996-11-21 | 2004-11-04 | ローム株式会社 | 半導体記憶装置 |
US5761110A (en) * | 1996-12-23 | 1998-06-02 | Lsi Logic Corporation | Memory cell capable of storing more than two logic states by using programmable resistances |
US5933365A (en) * | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
US5936882A (en) * | 1998-03-31 | 1999-08-10 | Motorola, Inc. | Magnetoresistive random access memory device and method of manufacture |
US6016290A (en) * | 1999-02-12 | 2000-01-18 | Read-Rite Corporation | Read/write head with shifted waveguide |
EP1196925B1 (en) * | 1999-06-18 | 2015-10-28 | NVE Corporation | Magnetic memory coincident thermal pulse data storage |
US6724674B2 (en) | 2000-11-08 | 2004-04-20 | International Business Machines Corporation | Memory storage device with heating element |
US6385082B1 (en) * | 2000-11-08 | 2002-05-07 | International Business Machines Corp. | Thermally-assisted magnetic random access memory (MRAM) |
US6744086B2 (en) * | 2001-05-15 | 2004-06-01 | Nve Corporation | Current switched magnetoresistive memory cell |
KR100442959B1 (ko) * | 2001-05-22 | 2004-08-04 | 주식회사 하이닉스반도체 | 마그네틱 램 및 그 형성방법 |
FR2832542B1 (fr) * | 2001-11-16 | 2005-05-06 | Commissariat Energie Atomique | Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif |
US6667901B1 (en) * | 2003-04-29 | 2003-12-23 | Hewlett-Packard Development Company, L.P. | Dual-junction magnetic memory device and read method |
US6925003B2 (en) * | 2003-09-08 | 2005-08-02 | Hewlett-Packard Development Company, L.P. | Magnetic memory cell structure |
US6911685B2 (en) * | 2003-10-10 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Thermally-assisted magnetic memory structures |
US6819586B1 (en) * | 2003-10-24 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermally-assisted magnetic memory structures |
-
2003
- 2003-10-31 US US10/698,501 patent/US7522446B2/en active Active
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2004
- 2004-05-13 TW TW093113463A patent/TWI341533B/zh active
- 2004-07-08 DE DE102004033159A patent/DE102004033159B4/de not_active Expired - Lifetime
- 2004-10-28 JP JP2004313278A patent/JP4572102B2/ja active Active
- 2004-10-29 CN CN2004100905310A patent/CN1612263B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002245774A (ja) * | 2001-01-11 | 2002-08-30 | Hewlett Packard Co <Hp> | 熱を利用した切替えを実行する情報記憶装置 |
JP2003060173A (ja) * | 2001-08-21 | 2003-02-28 | Canon Inc | 強磁性体メモリの熱補助駆動方法 |
JP2003133527A (ja) * | 2001-10-24 | 2003-05-09 | Sony Corp | 磁気メモリ装置、その書き込み方法およびその製造方法 |
JP2003298025A (ja) * | 2002-03-29 | 2003-10-17 | Toshiba Corp | 磁気記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200515418A (en) | 2005-05-01 |
CN1612263B (zh) | 2011-06-22 |
JP2005136419A (ja) | 2005-05-26 |
CN1612263A (zh) | 2005-05-04 |
DE102004033159A1 (de) | 2005-06-30 |
US20050094456A1 (en) | 2005-05-05 |
US7522446B2 (en) | 2009-04-21 |
DE102004033159B4 (de) | 2013-02-28 |
TWI341533B (en) | 2011-05-01 |
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