JP5648940B2 - 磁気トンネル接合において磁界を制御するための装置、方法、メモリ・セル - Google Patents
磁気トンネル接合において磁界を制御するための装置、方法、メモリ・セル Download PDFInfo
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Description
Claims (20)
- 磁界を生成するための装置であって、
第1の磁気書き込み層および第2の磁気書き込み層を含む書き込み装置を含み、
前記書き込み装置が、第1の書き込み電圧によって通電されると、前記第1の磁気書き込み層の磁気異方性を前記第1の磁気書き込み層の面に対する平行方向から前記第1の磁気書き込み層の面に対する直交方向へと切り換えて、前記第2の磁気書き込み層が前記書き込み装置に近接した領域において第1の磁界を誘導するように構成され、
前記書き込み装置が、第2の書き込み電圧によって通電されると、前記第2の磁気書き込み層の磁気異方性を前記第2の磁気書き込み層の面に対する平行方向から前記第2の磁気書き込み層の面に対する直交方向へと切り換えて、前記第1の磁気書き込み層が前記書き込み装置に近接した前記領域において第2の磁界を誘導するように構成され、前記第2の磁界が前記第1の磁界とは逆の方向である、装置。 - 前記第1の書き込み電圧の極性が前記第2の書き込み電圧の極性とは逆である、請求項1に記載の装置。
- 前記書き込み装置が、
前記第1の磁気書き込み層に電気的に結合された第1の書き込み電極と、
前記第2の磁気書き込み層に電気的に結合された第2の書き込み電極と、
前記第1の磁気書き込み層と前記第2の磁気書き込み層との間に配置された誘電書き込み層と、を更に含む、請求項1に記載の装置。 - 前記第1および第2の書き込み電極間に印加された第1の書き込み電圧によって、前記第1の磁気書き込み層の前記磁気異方性が前記第1の磁気書き込み層の面に対して直交方向となり、
前記第1の書き込み電圧とは逆の極性の前記第1および第2の書き込み電極間に印加された第2の書き込み電圧によって、前記第2の磁気書き込み層の前記磁気異方性が前記第2の磁気書き込み層の面に対して直交方向となる、請求項3に記載の装置。 - 前記第1および第2の磁気書き込み層が鉄(Fe)である、請求項1に記載の装置。
- 前記誘電書き込み層が酸化マグネシウム(MgO)である、請求項3に記載の装置。
- 前記書き込み装置に近接した前記領域が磁気トンネル接合(MTJ)の磁気フリー層を含み、前記磁気トンネル接合の抵抗が前記磁気フリー層の磁気方向に依存する、請求項1に記載の装置。
- 前記磁気トンネル接合から前記書き込み装置を電気的に分離する誘電分離層を更に含む、請求項7に記載の装置。
- 前記磁気トンネル接合が、
磁気参照層であって、前記磁気参照層の面に沿って予め設定された磁気方向に固定された磁気方向を有する磁気参照層と、
前記磁気参照層と前記磁気フリー層との間を電子が通り抜けることを可能とするように構成された誘電トンネル・バリアと、を含む、請求項8に記載の装置。 - 前記磁気トンネル接合が、
前記誘電分離層と前記磁気フリー層との間に配置され、前記磁気フリー層に電気的に結合された第1のMTJ電極と、
前記磁気参照層に電気的に結合された第2のMTJ電極と、を含む、請求項9に記載の装置。 - 磁界を生成するための方法であって、
第1および第2の磁気書き込み層間に書き込み電圧を印加することで、前記第1および第2の磁気書き込み層の一方の磁気異方性が前記磁気書き込み層の面に対する平行方向から前記磁気書き込み層の面に対する直交方向へと切り換わって、前記磁気書き込み層の面に対して平行方向の前記磁気異方性を有する前記磁気書き込み層が前記磁界を誘導することを含む、方法。 - 前記磁気書き込み層の面に対して平行方向である場合の前記第1の磁気書き込み層の磁気方向が、前記磁気書き込み層の面に対して平行方向である場合の前記第2の磁気書き込み層の磁気方向とは逆である、請求項11に記載の方法。
- 前記第1および第2の磁気書き込み層間に前記書き込み電圧を印加することが、
前記第1の磁気書き込み層に電気的に結合された第1の書き込み電極に第1の電圧電位を印加することと、
前記第2の磁気書き込み層に電気的に結合された第2の書き込み電極に第2の電圧電位を印加することと、を含む、請求項11に記載の方法。 - 前記第1および第2の書き込み電極間に印加された第1の書き込み電圧によって、前記第1の磁気書き込み層の前記磁気異方性が前記第1の磁気書き込み層の面に対して直交方向となり、
前記第1の書き込み電圧とは逆の極性の前記第1および第2の書き込み電極間に印加された第2の書き込み電圧によって、前記第2の磁気書き込み層の前記磁気異方性が前記第2の磁気書き込み層の面に対して直交方向となる、請求項13に記載の方法。 - 前記第1および第2の磁気書き込み層が鉄(Fe)である、請求項11に記載の方法。
- 前記第1および第2の磁気書き込み層の一方に近接配置された磁気トンネル接合(MTJ)の抵抗を調節することを更に含み、前記磁気トンネル接合の抵抗が前記誘導された磁界を受ける磁気フリー層の磁気方向に依存する、請求項11に記載の方法。
- 前記磁気トンネル接合が、
予め設定された方向に固定された磁気方向を有する磁気参照層と、
前記磁気参照層と前記磁気フリー層との間を電子が通り抜けることを可能とするように構成された誘電トンネル・バリアと、を含む、請求項16に記載の方法。 - 前記磁気フリー層および前記磁気参照層を介して読み取り電流を印加することを更に含む、請求項17に記載の方法。
- メモリ・セル・アレイにおけるメモリ・セルであって、
磁気フリー層を含む磁気トンネル接合(MTJ)であって、前記磁気トンネル接合の抵抗が前記磁気フリー層の磁気方向に依存する、磁気トンネル接合と、
前記磁気トンネル接合に近接配置された書き込み装置であって、第1および第2の磁気書き込み層の一方の磁気異方性を前記磁気書き込み層の面に対する平行方向から前記磁気書き込み層の面に対する直交方向へと切り換えて、前記磁気書き込み層の面に対して平行方向の前記磁気異方性を有する前記磁気書き込み層が前記磁気フリー層において前記磁気方向を誘導するように構成されている、書き込み装置と、
を含む、メモリ・セル。 - 前記磁気トンネル接合から前記書き込み装置を電気的に分離する誘電分離層を更に含む、請求項19に記載のメモリ・セル。
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US12/945,848 US8482968B2 (en) | 2010-11-13 | 2010-11-13 | Non-volatile magnetic tunnel junction transistor |
US12/945,848 | 2010-11-13 | ||
PCT/US2011/048333 WO2012064395A1 (en) | 2010-11-13 | 2011-08-18 | Non-volatile magnetic tunnel junction transistor |
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DE112011103750B4 (de) | 2015-07-02 |
US8482968B2 (en) | 2013-07-09 |
JP2014501040A (ja) | 2014-01-16 |
CN103201796B (zh) | 2016-06-01 |
DE112011103750T5 (de) | 2013-09-26 |
GB2498693B (en) | 2014-01-22 |
WO2012064395A1 (en) | 2012-05-18 |
GB2498693A (en) | 2013-07-24 |
CN103201796A (zh) | 2013-07-10 |
GB201309545D0 (en) | 2013-07-10 |
US20120120719A1 (en) | 2012-05-17 |
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