JP4566575B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4566575B2
JP4566575B2 JP2004037328A JP2004037328A JP4566575B2 JP 4566575 B2 JP4566575 B2 JP 4566575B2 JP 2004037328 A JP2004037328 A JP 2004037328A JP 2004037328 A JP2004037328 A JP 2004037328A JP 4566575 B2 JP4566575 B2 JP 4566575B2
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JP2004037328A
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Japanese (ja)
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JP2005227618A (ja
JP2005227618A5 (enExample
Inventor
慎志 前川
厳 藤井
康行 荒井
薫 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005227618A5 publication Critical patent/JP2005227618A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004037328A 2004-02-13 2004-02-13 発光装置の作製方法 Expired - Fee Related JP4566575B2 (ja)

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JP2004037328A JP4566575B2 (ja) 2004-02-13 2004-02-13 発光装置の作製方法

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JP2004037328A JP4566575B2 (ja) 2004-02-13 2004-02-13 発光装置の作製方法

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JP2005227618A JP2005227618A (ja) 2005-08-25
JP2005227618A5 JP2005227618A5 (enExample) 2007-03-29
JP4566575B2 true JP4566575B2 (ja) 2010-10-20

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4142064B2 (ja) 2005-08-05 2008-08-27 セイコーエプソン株式会社 液晶装置、電気光学装置、プロジェクタ、及びマイクロデバイス
JP2007079359A (ja) * 2005-09-16 2007-03-29 Ricoh Co Ltd 画像表示装置。
JP4438790B2 (ja) 2006-11-17 2010-03-24 ソニー株式会社 画素回路および表示装置、並びに画素回路の製造方法
TWI469354B (zh) 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
KR20140054465A (ko) * 2010-09-15 2014-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
JP5982147B2 (ja) * 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120663A (en) * 1981-01-16 1982-07-27 Seiko Epson Corp Electroless plating method
JP2762968B2 (ja) * 1995-09-28 1998-06-11 日本電気株式会社 電界効果型薄膜トランジスタの製造方法
US6512504B1 (en) * 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
JP4265818B2 (ja) * 1999-06-04 2009-05-20 株式会社半導体エネルギー研究所 電気光学装置
JP2003015548A (ja) * 2001-06-29 2003-01-17 Seiko Epson Corp 有機ｅｌ表示体の製造方法、半導体素子の配置方法、半導体装置の製造方法、電気光学装置の製造方法、電気光学装置、および電子機器
JP2002215065A (ja) * 2000-11-02 2002-07-31 Seiko Epson Corp 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器
GB2371910A (en) * 2001-01-31 2002-08-07 Seiko Epson Corp Display devices
JP4095830B2 (ja) * 2002-01-29 2008-06-04 統寶光電股▲ふん▼有限公司 有機ｌｅｄデバイスおよびその製造方法
JP4123411B2 (ja) * 2002-03-26 2008-07-23 株式会社半導体エネルギー研究所 発光装置
JP4250444B2 (ja) * 2002-04-01 2009-04-08 キヤノン株式会社 導電性部材の製造方法及び導電性部材
JP4398134B2 (ja) * 2002-04-01 2010-01-13 インターナショナル・ビジネス・マシーンズ・コーポレーション 薄膜トランジスタ、薄膜トランジスタの製造方法および該薄膜トランジスタを含むアクティブ・マトリックス型表示装置
JP3965562B2 (ja) * 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器
JP2003332070A (ja) * 2002-05-16 2003-11-21 Seiko Epson Corp 電気光学装置およびその製造方法、ならびに電子機器
JP4889933B2 (ja) * 2003-10-02 2012-03-07 株式会社半導体エネルギー研究所 半導体素子の作製方法
JP4645018B2 (ja) * 2003-11-06 2011-03-09 セイコーエプソン株式会社 コンタクトホールの形成方法
JP4684625B2 (ja) * 2003-11-14 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4667051B2 (ja) * 2004-01-29 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法

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