JP4562240B2 - ポジ型感放射線性組成物及びそれを用いたパターン形成方法 - Google Patents

ポジ型感放射線性組成物及びそれを用いたパターン形成方法 Download PDF

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Publication number
JP4562240B2
JP4562240B2 JP2000137461A JP2000137461A JP4562240B2 JP 4562240 B2 JP4562240 B2 JP 4562240B2 JP 2000137461 A JP2000137461 A JP 2000137461A JP 2000137461 A JP2000137461 A JP 2000137461A JP 4562240 B2 JP4562240 B2 JP 4562240B2
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JP
Japan
Prior art keywords
group
acid
radiation
sensitive composition
compound
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Expired - Lifetime
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JP2000137461A
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English (en)
Japanese (ja)
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JP2001318464A (ja
JP2001318464A5 (enExample
Inventor
慎一 漢那
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000137461A priority Critical patent/JP4562240B2/ja
Priority to US09/851,113 priority patent/US6806023B2/en
Publication of JP2001318464A publication Critical patent/JP2001318464A/ja
Publication of JP2001318464A5 publication Critical patent/JP2001318464A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2000137461A 2000-05-10 2000-05-10 ポジ型感放射線性組成物及びそれを用いたパターン形成方法 Expired - Lifetime JP4562240B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000137461A JP4562240B2 (ja) 2000-05-10 2000-05-10 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
US09/851,113 US6806023B2 (en) 2000-05-10 2001-05-09 Positive radiation-sensitive composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000137461A JP4562240B2 (ja) 2000-05-10 2000-05-10 ポジ型感放射線性組成物及びそれを用いたパターン形成方法

Publications (3)

Publication Number Publication Date
JP2001318464A JP2001318464A (ja) 2001-11-16
JP2001318464A5 JP2001318464A5 (enExample) 2007-06-21
JP4562240B2 true JP4562240B2 (ja) 2010-10-13

Family

ID=18645233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000137461A Expired - Lifetime JP4562240B2 (ja) 2000-05-10 2000-05-10 ポジ型感放射線性組成物及びそれを用いたパターン形成方法

Country Status (2)

Country Link
US (1) US6806023B2 (enExample)
JP (1) JP4562240B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100393230B1 (ko) * 2001-08-16 2003-07-31 삼성전자주식회사 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법
JP4121396B2 (ja) * 2003-03-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4488230B2 (ja) * 2005-10-31 2010-06-23 信越化学工業株式会社 レジスト用重合体、レジスト材料及びパターン形成方法
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
WO2008066011A1 (fr) * 2006-11-28 2008-06-05 Jsr Corporation Composition de résine sensible au rayonnement positif et procédé de formation de motif
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
JP6112813B2 (ja) * 2012-09-27 2017-04-12 住友精化株式会社 トリアリールスルホニウム塩の製造方法
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
BR112018067870B1 (pt) 2016-03-09 2022-04-19 Tokuyama Dental Corporation Composição fotocurável.
JP2017181895A (ja) * 2016-03-31 2017-10-05 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
US9872399B1 (en) 2016-07-22 2018-01-16 International Business Machines Corporation Implementing backdrilling elimination utilizing anti-electroplate coating
JP7438782B2 (ja) * 2019-02-26 2024-02-27 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JP3238465B2 (ja) 1991-04-30 2001-12-17 株式会社東芝 パターン形成用レジストおよびパターン形成方法
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
EP0552548B1 (en) * 1991-12-16 1997-03-19 Wako Pure Chemical Industries Ltd Resist material
JPH05323590A (ja) 1992-05-20 1993-12-07 Fujitsu Ltd 化学増幅型レジスト組成物
US5663035A (en) * 1994-04-13 1997-09-02 Hoechst Japan Limited Radiation-sensitive mixture comprising a basic iodonium compound
JP3509988B2 (ja) * 1994-04-13 2004-03-22 クラリアント インターナショナル リミテッド 放射感応性混合物
JP2942167B2 (ja) 1994-09-02 1999-08-30 和光純薬工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP3549592B2 (ja) * 1994-11-02 2004-08-04 クラリアント インターナショナル リミテッド 放射線感応性組成物
EP0718316B1 (en) 1994-12-20 2000-04-05 Ocg Microelectronic Materials, Inc. Crosslinked polymers
JPH08220762A (ja) * 1995-02-14 1996-08-30 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Ａｚエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
JP3802179B2 (ja) * 1997-02-07 2006-07-26 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3991462B2 (ja) * 1997-08-18 2007-10-17 Ｊｓｒ株式会社 感放射線性樹脂組成物
JPH11231536A (ja) * 1998-02-10 1999-08-27 Fuji Photo Film Co Ltd ポジ型感光性組成物
JPH11282163A (ja) * 1998-03-26 1999-10-15 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3955385B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
TWI224713B (en) * 2000-01-27 2004-12-01 Fuji Photo Film Co Ltd Positive photoresist composition
US6692883B2 (en) * 2000-04-21 2004-02-17 Fuji Photo Film Co., Ltd. Positive photoresist composition

Also Published As

Publication number Publication date
US20010055726A1 (en) 2001-12-27
JP2001318464A (ja) 2001-11-16
US6806023B2 (en) 2004-10-19

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