JP4560885B2 - 化合物半導体装置およびその製造方法ならびに半導体発光装置およびその製造方法 - Google Patents

化合物半導体装置およびその製造方法ならびに半導体発光装置およびその製造方法 Download PDF

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Publication number
JP4560885B2
JP4560885B2 JP2000127400A JP2000127400A JP4560885B2 JP 4560885 B2 JP4560885 B2 JP 4560885B2 JP 2000127400 A JP2000127400 A JP 2000127400A JP 2000127400 A JP2000127400 A JP 2000127400A JP 4560885 B2 JP4560885 B2 JP 4560885B2
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compound semiconductor
layer
semiconductor layer
group iii
lattice constant
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JP2001308463A5 (enExample
JP2001308463A (ja
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重吾 御友
啓修 成井
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Sony Corp
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Sony Corp
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JP2000127400A 2000-04-27 2000-04-27 化合物半導体装置およびその製造方法ならびに半導体発光装置およびその製造方法 Expired - Fee Related JP4560885B2 (ja)

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JP2000127400A JP4560885B2 (ja) 2000-04-27 2000-04-27 化合物半導体装置およびその製造方法ならびに半導体発光装置およびその製造方法

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JP2000127400A JP4560885B2 (ja) 2000-04-27 2000-04-27 化合物半導体装置およびその製造方法ならびに半導体発光装置およびその製造方法

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JP2001308463A JP2001308463A (ja) 2001-11-02
JP2001308463A5 JP2001308463A5 (enExample) 2006-12-28
JP4560885B2 true JP4560885B2 (ja) 2010-10-13

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2645055B2 (ja) * 1988-02-09 1997-08-25 株式会社東芝 ダブルヘテロウェハ及びダブルヘテロ接合型半導体レーザ装置
JP2642404B2 (ja) * 1988-05-13 1997-08-20 株式会社東芝 半導体レーザの製造方法
JP2806089B2 (ja) * 1991-08-06 1998-09-30 日本電気株式会社 半導体多重歪量子井戸構造
JPH06275919A (ja) * 1993-03-18 1994-09-30 Fujitsu Ltd 光半導体素子
JPH07235730A (ja) * 1994-02-22 1995-09-05 Matsushita Electric Ind Co Ltd 歪多重量子井戸構造およびその製造方法ならびに半導体レーザ
JPH08102566A (ja) * 1994-09-30 1996-04-16 Nec Corp 量子井戸構造光半導体装置及びその製造方法
JP2669401B2 (ja) * 1995-05-25 1997-10-27 日本電気株式会社 半導体レーザおよびその製造方法

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