JP4559040B2 - 直列接続されたoled構造体及び製造方法 - Google Patents
直列接続されたoled構造体及び製造方法 Download PDFInfo
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- JP4559040B2 JP4559040B2 JP2003158781A JP2003158781A JP4559040B2 JP 4559040 B2 JP4559040 B2 JP 4559040B2 JP 2003158781 A JP2003158781 A JP 2003158781A JP 2003158781 A JP2003158781 A JP 2003158781A JP 4559040 B2 JP4559040 B2 JP 4559040B2
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- substrate
- oled
- light emitting
- electrode
- oled module
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Description
本発明の図22のOLEDモジュール100は、OLEDデバイスのような、どのようなタイプの有機発光デバイスも含む。「光」という用語は、可視光並びにUV放射及びIR放射を含む。OLEDモジュール100は、2つの電極、例えば第1電極(カソード)120と第2電極(アノード)130との間に配置された発光層110を含む。発光層110は、電圧源「V」から第2電極130と第1電極120間に電圧が印加されると、光を放出する。OLEDモジュール100は典型的には、図22に示されるように、PET(MYLAR(商標))及びポリカーボネート等のようなガラス又は透明プラスチックといったデバイス基板125を含む。此処で用いられる「OLEDモジュール」という用語は、通常は、少なくとも発光層110と、第1電極120と、第2電極130とを含む組合せのことをいう。本発明の一実施形態においては、OLEDモジュール100はさらに、デバイス基板301を含む。本発明の一実施形態においては、OLEDモジュール100はさらに、デバイス基板301とデバイスの電気接触部とを含む。本発明の一実施形態においては、OLEDモジュール100はさらに、デバイス基板301と、電気接触部と、光輝性層135とを含む。光輝性層135については後述する。
第2電極130と第1電極120が、電荷キャリア、すなわち正孔と電子を発光層110に注入し、そこで正孔と電子が再結合して、励起された分子又は励起子を生成し、該分子又は励起子が崩壊するときに光を放出する。分子によって放出される光の色は、分子又は励起子の励起状態と基底状態との間のエネルギー差に依存する。印加される電圧は、典型的には約3−10ボルトであるが、本発明の別の実施形態においては、印加される電圧は最大30ボルトまで或いはそれ以上とされ、外部量子効率(注入電子1個当りのフォトン放出数の割合)は0.01%から5%の間であるが、10%、20%、30%又はそれ以上とすることができる。発光層110は、典型的には約50−500ナノメートルの厚さを有し、電極120、130の各々は、典型的には約100−1000ナノメートルの厚さを有する。
本発明の例示的な実施形態と組み合わせて種々の発光層110が用いられる。図22に示された一実施形態によれば、発光層110は単一層を含む。本発明の特定の一実施形態においては、発光層110は共役ポリマーを含む。共役ポリマーは発光性である。本発明の一実施形態においては、共役ポリマーは、電子輸送分子と発光性材料とがドープされた正孔輸送ポリマーを含む。本発明の別の実施形態においては、共役ポリマーは、正孔輸送分子と発光性材料とがドープされた不活性ポリマーを含む。本発明の別の実施形態においては、発光層110は、他の発光性分子がドープされた発光性の小さい有機分子のアモルファス・フィルムを含む。
図27及び図28を参照すると、本発明の別の実施形態に係る発光デバイスのOLEDモジュール200が示されている。OLEDモジュール200は、発光層110と、第2電極130と、光を透過する第1電極120とを備える。また、OLEDモジュール200は、光を透過する基板125を含む。図22におけるものと対応する図27及び図28の要素(例えば第2電極130、第1電極120、発光層100)は、図22に関連して上述されたのと同じ材料から形成される。電圧を印加すると、図26の発光層110において光(矢印101で表す)が生じ、第2電極130及び基板125を通って伝搬する。
図27に示されるように、本発明の別の特定の実施形態においては、OLEDモジュール200は光輝層135を含む。光輝性層135は、発光層110からの光を吸収し、通常はより長い波長をもつ光を放出する光輝性材料を含む。別の特定の実施形態においては、光輝性材料は無機蛍光体を含む。別の特定の実施形態においては、光輝性材料は、有機染料のような有機光輝性材料を含む。用いられる蛍光体材料の例は、ガーネット構造状に結晶化された、セリウムドープのY3Al5O12(YAG)格子に基づく蛍光体を含む。特定の蛍光体の例は、(Y1-x-yGdxCey)3Al5O12(YAG:Gd,Ce)、(Y1-xCex)3Al5O12(YAG:Ce)、(Y1-xCex)3(Al1-yGay)5O12(YAG:Ga,Ce)、及び(Y1-x-yGdxCey)3(Al5-zGaz)5O12(YAG:Gd,Ga,Ce)、及び(Gd1-xCex)Sc2Al3O12(GSAG)である。YAG蛍光体は、通常は(Y1-X-YGdXCeY)3(Al1-ZGaZ)5O12で表わされ、ここで、
x+y≦1;0≦x≦1;0≦y≦1;及び0≦z≦1
である。発光バンドのピーク位置は、上述の蛍光体において大きく変わる。ガーネット組成に応じて、Ce3+発光は、発光効率における大きな損失無しに、緑色(〜540nm;YAG:Ga,Ce)から赤色(〜600nm;YAG:Gd,Ce)まで調整される。
図29は、本発明の例示的な実施形態に係る図27及び28のOLEDモジュール200を形成する方法を示す。図29に示されるように、段階1において、基板125は、薄い酸化インジウム・スズ(ITO)でスパッタ被覆され、次いで例えば図28に示されたパターンでパターン形成されて、第2電極130が形成される。段階2において、発光層110(上述の種々の実施形態においては、図22−26に示されるように1つ又はそれ以上のサブ層を含む)が、例えばスピンコーティング又はインクジェット処理によって蒸着される。段階3において、第1電極120が、例えばアルミニウムでオーバーコートされたフッ化リチウムの薄層を含む反射構造体として蒸着される。本発明の一実施形態においては、第1電極120は、ステンシルマスクを通した蒸発によって蒸着される。次に、段階4において、シール部材150がシーラント152に適用されて、ほぼ密封された障壁が形成される。本発明の一実施形態においては、シール部材150はガラスを含む。
本発明の特定の一方法に従って、OLEDモジュール303、305を含む図21の発光デバイス300を製造した。発光デバイス300は、3平方インチ(1インチは2.54cm)であり、9つの直列の群310からなるものであった。3つの直列の群310は、5つのOLEDモジュール303、305(0.46×0.46インチ)からなり、6つの直列の群310は、12個のOLEDモジュール303、305(0.21×0.21インチ)からなるものであった。2つの隣接するOLEDモジュール303、305についてのデバイス製造手順の概略を、図21に示す。
34 基板
36 OLEDの直列の群
38 OLEDモジュール
42 アノード
44 カソード
48 第1導電線
50 第2導電線
52 回路素子
Claims (17)
- 基板(34,301)と、
前記基板上に設けられた有機発光ダイオード(OLED)の複数の直列の群(36)と
を含む発光デバイス(300)であって、前記OLEDの直列の群の各々は、複数のOLEDモジュール(38)を含み、前記OLEDの直列の群の各々におけるOLEDモジュールは、電気的に直列に接続され、前記OLEDモジュールは、電圧を印加すると光を放出するように構成されており、前記複数のOLEDモジュール(38)がさらに、少なくとも第1及び第2のOLEDモジュール(303,305)を含み、第1及び第2のOLEDモジュール(303,305)の各々が、前記基板(301)のそれぞれの一部の上に配置されたそれぞれの第1電極(302)を含み、前記第1のOLEDモジュール(303)が、
前記基板(301)の第1部分(320)上に配置された前記第1のOLEDモジュール(303)の前記第1電極(302)と、
前記第1のOLEDモジュール(303)の第1電極(302)の一部と、前記基板(301)の第4部分(326)との上に配置された相互接続部(304)と、
前記基板(301)の第2部分(322)と、前記第1電極(302)の一部と、前記相互接続部(304)の一部との上に配置された発光層(308)と、
前記基板(301)の第3部分(324)を覆うように配置され、前記発光層(308)の一部の上に配置され、前記第2のOLEDモジュール(305)の相互接続部(304)の一部の上に配置された第2電極(306)と、
を含み、前記第2のOLEDモジュール(305)は、前記第1のOLEDモジュール(303)に隣接して配置されている、発光デバイス。 - 前記第1のOLEDモジュール(303)の基板(301)の第1部分(320)が、前記基板(301)の第2部分(322)に隣接して配置され、前記基板(301)の第2部分(322)が、前記基板(301)の第3部分(324)に隣接して配置され、前記基板(301)の第3部分(324)が、前記基板(301)の第4部分(326)に隣接して配置され、前記基板(301)の第4部分(326)が、前記第2のOLEDモジュール(305)の基板(301)の第1部分(320)に隣接して配置されている、請求項1に記載の発光デバイス。
- 前記基板上に設けられ、各OLEDの直列の群の第1端に電気的に接続された少なくとも1つの第1導電線(48,51)と、
前記基板上に設けられ、前記第1端とは反対側の各OLEDの直列の群の第2端に電気的に接続された第2導電線(50)と、
をさらに含む、請求項1又は請求項2に記載の発光デバイス。 - 正弦波形を有する電圧を変換された電圧波形に変換して、前記変換された電圧波形を前記少なくとも1つの第1及び第2導電線(48,51,50)に印加する変換回路(72)をさらに含む、請求項3に記載の発光デバイス。
- 前記変換回路(72)は、バック・ツー・バック型ツェナーダイオード(400,402)を含み、前記変換された電圧波形はクリップされた正弦波である、請求項4に記載の発光デバイス。
- 前記変換回路(72)は、前記正弦波形の周波数とは異なる変換された電圧波形の動作周波数を与える発振器(418)を含む、請求項4に記載の発光デバイス。
- 前記変換された電圧波形は、方形パルス波形である、請求項6に記載の発光デバイス。
- 前記変換された電圧波形は、10kHzより大きい周波数を有する、請求項6に記載の発光デバイス。
- 前記第1及び第2導電線(48,51,50)に電気的に接続されてこれら導電線に直流(DC)電圧を供給するDC電源(32)をさらに含む、請求項3に記載の発光デバイス。
- 前記OLEDモジュール(38)の各々が、それぞれアノード(42)とカソード(44)とを含み、前記OLEDの直列の群(36)の各々のOLEDモジュールがアノードからカソードに直列接続される、請求項3に記載の発光デバイス。
- OLEDの前記複数の直列の群(36)は、標識の一部として配置される、請求項3に記載の発光デバイス。
- 前記直列の群(36)は、前記直列の群(36)の第1端が互いに対して交互の極性をもつように配置される、請求項3に記載の発光デバイス。
- 前記第2電極(306)が透明である、請求項1乃至請求項12のいずれか1項に記載の発光デバイス。
- 前記第2電極(306)が酸化インジウム・スズを含む、請求項13に記載の発光デバイス。
- 前記第1電極(302)と相互接続部(304)が同じ材料から形成されされている、請求項1乃至請求項14のいずれか1項に記載の発光デバイス。
- 請求項1に記載の発光デバイス(300)を製造する方法であって、当該方法が、
前記各OLEDモジュール(38)のそれぞれの第1電極(302)を前記基板(301)のそれぞれの一部の上に配置すること、
を含んでおり、前記第1のOLEDモジュール(303)を形成することが、
前記第1のOLEDモジュール(303)の第1電極(302)を前記基板(301)の第1部分(320)上に配置し、
前記第1のOLEDモジュール(303)の第1電極(302)の一部と、前記基板(301)の第4部分(326)との上に相互接続部(304)を配置し、
前記基板(301)の第2部分(322)と、前記第1電極(302)の一部と、前記相互接続部(304)の一部との上に発光層(308)を配置し、
前記基板(301)の第3部分(324)と、前記発光層(308)の一部と、前記第2のOLEDモジュール(305)の前記相互接続部(304)の一部とを覆うように第2電極(306)を配置すること、
を含み、前記第2のOLEDモジュール(305)を、前記第1のOLEDモジュール(303)に隣接して配置する、方法。 - 前記第1のOLEDモジュール(303)の基板(301)の第1部分(320)は、前記基板(301)の第2部分(322)に隣接して配置され、前記基板(301)の第2部分(322)は、前記基板(301)の第3部分(324)に隣接して配置され、前記基板(301)の第3部分(324)は、前記基板(301)の第4部分(326)に隣接して配置され、前記基板(301)の第4部分(326)は、前記第2のOLEDモジュール(305)の基板(301)の第1部分(320)に隣接して配置される、請求項16に記載の方法。
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US20040021425A1 (en) | 2004-02-05 |
JP2004134359A (ja) | 2004-04-30 |
US7049757B2 (en) | 2006-05-23 |
DE10324787A1 (de) | 2004-02-26 |
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