JP4551256B2 - 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム - Google Patents

載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム Download PDF

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Publication number
JP4551256B2
JP4551256B2 JP2005101767A JP2005101767A JP4551256B2 JP 4551256 B2 JP4551256 B2 JP 4551256B2 JP 2005101767 A JP2005101767 A JP 2005101767A JP 2005101767 A JP2005101767 A JP 2005101767A JP 4551256 B2 JP4551256 B2 JP 4551256B2
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refrigerant
temperature
mounting table
temperature control
flow path
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Expired - Fee Related
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Japanese (ja)
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JP2006286733A (ja
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征英 岩▲崎▼
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2005101767A priority Critical patent/JP4551256B2/ja
Priority to KR1020060028274A priority patent/KR100905897B1/ko
Priority to US11/393,866 priority patent/US7789962B2/en
Priority to CN2006100664987A priority patent/CN1841654B/zh
Priority to TW095111616A priority patent/TWI440079B/zh
Publication of JP2006286733A publication Critical patent/JP2006286733A/ja
Priority to US12/781,527 priority patent/US8182869B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Temperature (AREA)
JP2005101767A 2005-03-31 2005-03-31 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム Expired - Fee Related JP4551256B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005101767A JP4551256B2 (ja) 2005-03-31 2005-03-31 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム
KR1020060028274A KR100905897B1 (ko) 2005-03-31 2006-03-29 탑재대의 온도 제어 장치 및 탑재대의 온도 제어 방법 및처리 장치 및 탑재대 온도 제어 프로그램
US11/393,866 US7789962B2 (en) 2005-03-31 2006-03-31 Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
CN2006100664987A CN1841654B (zh) 2005-03-31 2006-03-31 载置台的温度控制装置、方法和程序以及处理装置
TW095111616A TWI440079B (zh) 2005-03-31 2006-03-31 Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage
US12/781,527 US8182869B2 (en) 2005-03-31 2010-05-17 Method for controlling temperature of a mounting table

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005101767A JP4551256B2 (ja) 2005-03-31 2005-03-31 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム

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JP2006286733A JP2006286733A (ja) 2006-10-19
JP4551256B2 true JP4551256B2 (ja) 2010-09-22

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JP (1) JP4551256B2 (zh)
KR (1) KR100905897B1 (zh)
CN (1) CN1841654B (zh)
TW (1) TWI440079B (zh)

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JP4551256B2 (ja) 2005-03-31 2010-09-22 東京エレクトロン株式会社 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム
CN100361288C (zh) * 2005-12-07 2008-01-09 北京北方微电子基地设备工艺研究中心有限责任公司 控制静电卡盘温度系统
JP5003102B2 (ja) * 2006-10-27 2012-08-15 東京エレクトロン株式会社 静電チャックの診断方法、真空処理装置及び記憶媒体
US7582491B2 (en) 2006-10-27 2009-09-01 Tokyo Electron Limited Method for diagnosing electrostatic chuck, vacuum processing apparatus, and storage medium
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP4917981B2 (ja) * 2007-07-10 2012-04-18 東京エレクトロン株式会社 検査方法及び検査方法を記録したプログラム記録媒体
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JP2009111301A (ja) * 2007-11-01 2009-05-21 Hitachi High-Technologies Corp プラズマ処理装置
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KR100890961B1 (ko) * 2008-07-08 2009-03-27 (주)피티씨 소비전력절감을 위한 칠러 장치의 하이브리드 온도제어방법
CN101373731B (zh) * 2008-10-21 2013-02-27 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘装置及其温度控制方法
KR100884319B1 (ko) * 2008-12-03 2009-02-18 (주)피티씨 소비전력절감을 위한 칠러 장치
KR100906629B1 (ko) * 2008-12-29 2009-07-10 (주)테키스트 온도 조절 장치
JP5641709B2 (ja) * 2009-04-23 2014-12-17 キヤノン株式会社 デバイス製造装置およびデバイス製造方法
CN102598216B (zh) * 2009-11-02 2015-01-07 丽佳达普株式会社 化学气相沉积设备的温度控制方法
WO2011052832A1 (ko) * 2009-11-02 2011-05-05 엘아이지에이디피 주식회사 화학기상증착장치 및 화학기상증착장치의 온도제어방법
JP5643062B2 (ja) 2009-11-24 2014-12-17 東京エレクトロン株式会社 プラズマ処理装置
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
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JP5762841B2 (ja) 2011-06-21 2015-08-12 東京エレクトロン株式会社 半導体製造装置
JP5822578B2 (ja) * 2011-07-20 2015-11-24 東京エレクトロン株式会社 載置台温度制御装置及び基板処理装置
CN102509714B (zh) * 2011-11-18 2014-08-27 中微半导体设备(上海)有限公司 快速控制静电吸盘温度的装置及方法
JP5863582B2 (ja) 2012-07-02 2016-02-16 東京エレクトロン株式会社 プラズマ処理装置、及び温度制御方法
KR101335435B1 (ko) * 2012-09-25 2013-11-29 유니셈(주) 반도체 제조설비용 냉각장치
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CN104681380B (zh) * 2013-11-29 2017-07-07 中微半导体设备(上海)有限公司 一种静电卡盘及其等离子体处理室
CN103762188B (zh) * 2014-01-02 2016-06-15 同济大学 一种半导体长膜工艺中静电卡盘及晶片温度的辨识方法
JP6018606B2 (ja) * 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
KR101634452B1 (ko) * 2014-10-24 2016-06-29 세메스 주식회사 프로브 카드를 이용한 웨이퍼 검사용 척 구조물
KR102000852B1 (ko) 2014-11-12 2019-07-16 도쿄엘렉트론가부시키가이샤 스테이지 및 기판 처리 장치
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JP6820206B2 (ja) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 被加工物を処理する方法
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CN114300386A (zh) * 2021-12-17 2022-04-08 北京北方华创微电子装备有限公司 一种反应腔室尾气压力控制装置及半导体工艺设备
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KR100905897B1 (ko) 2009-07-02
CN1841654B (zh) 2010-10-20
JP2006286733A (ja) 2006-10-19
TWI440079B (zh) 2014-06-01
KR20060106736A (ko) 2006-10-12
TW200703489A (en) 2007-01-16
CN1841654A (zh) 2006-10-04

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