JP4533925B2 - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
JP4533925B2
JP4533925B2 JP2007325303A JP2007325303A JP4533925B2 JP 4533925 B2 JP4533925 B2 JP 4533925B2 JP 2007325303 A JP2007325303 A JP 2007325303A JP 2007325303 A JP2007325303 A JP 2007325303A JP 4533925 B2 JP4533925 B2 JP 4533925B2
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JP
Japan
Prior art keywords
electrode
film
heat transfer
film forming
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007325303A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009144224A (ja
JP2009144224A5 (enExample
Inventor
一仁 西村
秀紀 笹岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOCHI INDUSTRIAL PROMOTION CENTER
Casio Computer Co Ltd
Original Assignee
KOCHI INDUSTRIAL PROMOTION CENTER
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOCHI INDUSTRIAL PROMOTION CENTER, Casio Computer Co Ltd filed Critical KOCHI INDUSTRIAL PROMOTION CENTER
Priority to JP2007325303A priority Critical patent/JP4533925B2/ja
Priority to US12/334,832 priority patent/US7935548B2/en
Priority to KR1020080128842A priority patent/KR101120590B1/ko
Priority to CN2008101856447A priority patent/CN101463472B/zh
Publication of JP2009144224A publication Critical patent/JP2009144224A/ja
Publication of JP2009144224A5 publication Critical patent/JP2009144224A5/ja
Application granted granted Critical
Publication of JP4533925B2 publication Critical patent/JP4533925B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2007325303A 2007-12-17 2007-12-17 成膜装置及び成膜方法 Expired - Fee Related JP4533925B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007325303A JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法
US12/334,832 US7935548B2 (en) 2007-12-17 2008-12-15 Deposition apparatus and deposition method
KR1020080128842A KR101120590B1 (ko) 2007-12-17 2008-12-17 성막장치 및 성막방법
CN2008101856447A CN101463472B (zh) 2007-12-17 2008-12-17 沉积设备和沉积方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007325303A JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法

Publications (3)

Publication Number Publication Date
JP2009144224A JP2009144224A (ja) 2009-07-02
JP2009144224A5 JP2009144224A5 (enExample) 2009-10-22
JP4533925B2 true JP4533925B2 (ja) 2010-09-01

Family

ID=40753798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007325303A Expired - Fee Related JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法

Country Status (4)

Country Link
US (1) US7935548B2 (enExample)
JP (1) JP4533925B2 (enExample)
KR (1) KR101120590B1 (enExample)
CN (1) CN101463472B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120042840A (ko) * 2009-07-14 2012-05-03 헴로크세미컨덕터코포레이션 제조 시스템 내의 증착물 형성을 방지하는 방법
CA2816063A1 (en) 2010-10-29 2012-05-03 Baker Hughes Incorporated Graphene-coated diamond particles, compositions and intermediate structures comprising same, and methods of forming graphene-coated diamond particles and polycrystalline compacts
US8840693B2 (en) 2010-10-29 2014-09-23 Baker Hughes Incorporated Coated particles and related methods
DE102011009347B4 (de) * 2010-11-29 2016-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
CN102367570B (zh) * 2011-11-01 2014-11-19 南昌航空大学 一种制备金刚石-石墨烯复合膜的方法
CN102517633B (zh) * 2011-12-26 2015-05-20 常州二维碳素科技有限公司 一种生长石墨烯的支架及方法
DE102012205616B4 (de) * 2012-04-04 2016-07-14 Siltronic Ag Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
US20150197852A1 (en) * 2014-01-13 2015-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma processing apparatus and plasma-uniformity control method
CN104809343B (zh) * 2015-04-23 2018-09-14 西安理工大学 一种等离子体中使用电流密度卷积完全匹配层的实现方法
EP3423813B1 (en) * 2016-03-04 2022-03-02 VG Systems Limited Xps and raman sample analysis system and method
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
WO2021091786A1 (en) 2019-11-04 2021-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
CN111647879A (zh) * 2020-04-20 2020-09-11 中国科学技术大学 一种化学气相沉积装置与方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0460552U (enExample) * 1990-09-28 1992-05-25
JP3595853B2 (ja) 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
JP3817414B2 (ja) * 2000-08-23 2006-09-06 株式会社日立製作所 試料台ユニットおよびプラズマ処理装置
JP4409373B2 (ja) * 2004-06-29 2010-02-03 日本碍子株式会社 基板載置装置及び基板温度調整方法
JP4869610B2 (ja) * 2005-03-17 2012-02-08 東京エレクトロン株式会社 基板保持部材及び基板処理装置
US7418921B2 (en) 2005-08-12 2008-09-02 Asm Japan K.K. Plasma CVD apparatus for forming uniform film
JP5161450B2 (ja) * 2005-09-30 2013-03-13 財団法人高知県産業振興センター プラズマｃｖｄ装置及びプラズマ表面処理方法

Also Published As

Publication number Publication date
JP2009144224A (ja) 2009-07-02
KR20090065472A (ko) 2009-06-22
US20090155934A1 (en) 2009-06-18
KR101120590B1 (ko) 2012-03-09
US7935548B2 (en) 2011-05-03
CN101463472B (zh) 2012-01-11
CN101463472A (zh) 2009-06-24

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