JP2009144224A5 - - Google Patents

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Publication number
JP2009144224A5
JP2009144224A5 JP2007325303A JP2007325303A JP2009144224A5 JP 2009144224 A5 JP2009144224 A5 JP 2009144224A5 JP 2007325303 A JP2007325303 A JP 2007325303A JP 2007325303 A JP2007325303 A JP 2007325303A JP 2009144224 A5 JP2009144224 A5 JP 2009144224A5
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JP
Japan
Prior art keywords
forming apparatus
formed under
graphene sheet
film forming
carbon nanowall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007325303A
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English (en)
Japanese (ja)
Other versions
JP4533925B2 (ja
JP2009144224A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007325303A priority Critical patent/JP4533925B2/ja
Priority claimed from JP2007325303A external-priority patent/JP4533925B2/ja
Priority to US12/334,832 priority patent/US7935548B2/en
Priority to KR1020080128842A priority patent/KR101120590B1/ko
Priority to CN2008101856447A priority patent/CN101463472B/zh
Publication of JP2009144224A publication Critical patent/JP2009144224A/ja
Publication of JP2009144224A5 publication Critical patent/JP2009144224A5/ja
Application granted granted Critical
Publication of JP4533925B2 publication Critical patent/JP4533925B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007325303A 2007-12-17 2007-12-17 成膜装置及び成膜方法 Expired - Fee Related JP4533925B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007325303A JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法
US12/334,832 US7935548B2 (en) 2007-12-17 2008-12-15 Deposition apparatus and deposition method
KR1020080128842A KR101120590B1 (ko) 2007-12-17 2008-12-17 성막장치 및 성막방법
CN2008101856447A CN101463472B (zh) 2007-12-17 2008-12-17 沉积设备和沉积方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007325303A JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法

Publications (3)

Publication Number Publication Date
JP2009144224A JP2009144224A (ja) 2009-07-02
JP2009144224A5 true JP2009144224A5 (enExample) 2009-10-22
JP4533925B2 JP4533925B2 (ja) 2010-09-01

Family

ID=40753798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007325303A Expired - Fee Related JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法

Country Status (4)

Country Link
US (1) US7935548B2 (enExample)
JP (1) JP4533925B2 (enExample)
KR (1) KR101120590B1 (enExample)
CN (1) CN101463472B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012533684A (ja) * 2009-07-14 2012-12-27 ヘムロック・セミコンダクター・コーポレーション 製造システム内における堆積物形成の抑止方法
US8840693B2 (en) 2010-10-29 2014-09-23 Baker Hughes Incorporated Coated particles and related methods
RU2013124412A (ru) 2010-10-29 2014-12-10 Бейкер Хьюз Инкорпорейтед Покрытые графеном алмазные частицы, композиции и промежуточные структуры, содержащие такие частицы, и способы формирования покрытых графеном алмазных частиц и поликристаллических элементов
DE102011009347B4 (de) * 2010-11-29 2016-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
CN102367570B (zh) * 2011-11-01 2014-11-19 南昌航空大学 一种制备金刚石-石墨烯复合膜的方法
CN102517633B (zh) * 2011-12-26 2015-05-20 常州二维碳素科技有限公司 一种生长石墨烯的支架及方法
DE102012205616B4 (de) * 2012-04-04 2016-07-14 Siltronic Ag Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
US20150197852A1 (en) * 2014-01-13 2015-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma processing apparatus and plasma-uniformity control method
CN104809343B (zh) * 2015-04-23 2018-09-14 西安理工大学 一种等离子体中使用电流密度卷积完全匹配层的实现方法
WO2017148668A2 (en) * 2016-03-04 2017-09-08 Vg Systems Limited Xps and raman sample analysis system and method
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
US11981998B2 (en) 2019-11-04 2024-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
CN111647879A (zh) * 2020-04-20 2020-09-11 中国科学技术大学 一种化学气相沉积装置与方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0460552U (enExample) * 1990-09-28 1992-05-25
JP3595853B2 (ja) * 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
JP3817414B2 (ja) * 2000-08-23 2006-09-06 株式会社日立製作所 試料台ユニットおよびプラズマ処理装置
JP4409373B2 (ja) * 2004-06-29 2010-02-03 日本碍子株式会社 基板載置装置及び基板温度調整方法
JP4869610B2 (ja) * 2005-03-17 2012-02-08 東京エレクトロン株式会社 基板保持部材及び基板処理装置
US7418921B2 (en) 2005-08-12 2008-09-02 Asm Japan K.K. Plasma CVD apparatus for forming uniform film
JP5161450B2 (ja) 2005-09-30 2013-03-13 財団法人高知県産業振興センター プラズマｃｖｄ装置及びプラズマ表面処理方法

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