JP4532480B2 - Ｅｓｄ保護デバイスの製造方法 - Google Patents

Ｅｓｄ保護デバイスの製造方法 Download PDF

Info

Publication number
JP4532480B2
JP4532480B2 JP2006509505A JP2006509505A JP4532480B2 JP 4532480 B2 JP4532480 B2 JP 4532480B2 JP 2006509505 A JP2006509505 A JP 2006509505A JP 2006509505 A JP2006509505 A JP 2006509505A JP 4532480 B2 JP4532480 B2 JP 4532480B2
Authority
JP
Japan
Prior art keywords
base region
esd
region
esd protection
protection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006509505A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006522489A5 (enExample
JP2006522489A (ja
Inventor
ディ． ホイットフィールド、ジェイムズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2006522489A publication Critical patent/JP2006522489A/ja
Publication of JP2006522489A5 publication Critical patent/JP2006522489A5/ja
Application granted granted Critical
Publication of JP4532480B2 publication Critical patent/JP4532480B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2006509505A 2003-04-04 2004-03-31 Ｅｓｄ保護デバイスの製造方法 Expired - Fee Related JP4532480B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/407,687 US7074687B2 (en) 2003-04-04 2003-04-04 Method for forming an ESD protection device
PCT/US2004/009815 WO2004090940A2 (en) 2003-04-04 2004-03-31 Esd protection device and method making the same

Publications (3)

Publication Number Publication Date
JP2006522489A JP2006522489A (ja) 2006-09-28
JP2006522489A5 JP2006522489A5 (enExample) 2007-05-17
JP4532480B2 true JP4532480B2 (ja) 2010-08-25

Family

ID=33097596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006509505A Expired - Fee Related JP4532480B2 (ja) 2003-04-04 2004-03-31 Ｅｓｄ保護デバイスの製造方法

Country Status (6)

Country Link
US (1) US7074687B2 (enExample)
JP (1) JP4532480B2 (enExample)
KR (1) KR101054664B1 (enExample)
CN (1) CN100587924C (enExample)
TW (1) TW200509358A (enExample)
WO (1) WO2004090940A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
US9356443B2 (en) * 2012-07-31 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. ESD clamp for multiple power rails
CN206946908U (zh) * 2017-06-28 2018-01-30 罗伯特·博世有限公司 高侧栅极驱动器
TWI841213B (zh) * 2018-12-24 2024-05-01 晶元光電股份有限公司 半導體元件
CN111599859B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种具有过压保护功能的晶闸管及制造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1436703A (en) * 1921-03-07 1922-11-28 Herman W Fisher Rope handle
US1584122A (en) * 1924-08-07 1926-05-11 Mark M Moore Skipping device
DE1930746U (de) * 1965-01-13 1966-01-05 Jan Hendrik Otto Sprungseil.
US4090705A (en) * 1977-03-21 1978-05-23 Ross Young Jump rope
US4505474A (en) * 1984-05-25 1985-03-19 Mattox Ernest M Weighted elastomeric jumping device
US4801137A (en) * 1987-10-26 1989-01-31 Shane Douglass Variable weight hand held exercise apparatus
US4890829A (en) * 1988-09-19 1990-01-02 Priscilla Burton Jump rope
JPH04291953A (ja) * 1991-03-20 1992-10-16 Fujitsu Ltd 保護回路
IT1253682B (it) 1991-09-12 1995-08-22 Sgs Thomson Microelectronics Struttura di protezione dalle scariche elettrostatiche
US5284458A (en) * 1992-02-05 1994-02-08 Perry Deborah A Exercise device
US5215509A (en) * 1992-05-18 1993-06-01 Meyer/Glass Design Rope jumping device
US5477414A (en) 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
JP2601143B2 (ja) * 1993-06-17 1997-04-16 日本電気株式会社 半導体装置
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
EP0700089A1 (en) * 1994-08-19 1996-03-06 STMicroelectronics S.r.l. A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit
DE69524858T2 (de) * 1995-02-28 2002-07-18 Stmicroelectronics S.R.L., Agrate Brianza Bauelement zum Schutz einer integrierten Schaltung gegen elektrostatische Entladungen
US5940258A (en) 1996-02-29 1999-08-17 Texas Instruments Incorporated Semiconductor ESD protection circuit
US6125021A (en) 1996-04-30 2000-09-26 Texas Instruments Incorporated Semiconductor ESD protection circuit
US5850095A (en) 1996-09-24 1998-12-15 Texas Instruments Incorporated ESD protection circuit using zener diode and interdigitated NPN transistor
US5821572A (en) * 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
US5982217A (en) 1997-02-19 1999-11-09 Texas Instruments Incorporated PNP driven NMOS ESD protection circuit
US6140683A (en) 1997-05-08 2000-10-31 Texas Instruments Incorporated Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
US5898205A (en) 1997-07-11 1999-04-27 Taiwan Semiconductor Manufacturing Co. Ltd. Enhanced ESD protection circuitry
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US6310379B1 (en) 1999-06-03 2001-10-30 Texas Instruments Incorporated NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors
US6424013B1 (en) 1999-07-09 2002-07-23 Texas Instruments Incorporated Body-triggered ESD protection circuit
US6249410B1 (en) 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
TW469622B (en) 1999-09-13 2001-12-21 Koninkl Philips Electronics Nv Semiconductor device with ESD protection
US6218226B1 (en) 2000-01-21 2001-04-17 Vanguard International Semiconductor Corporation Method of forming an ESD protection device
US6327126B1 (en) * 2000-01-28 2001-12-04 Motorola, Inc. Electrostatic discharge circuit
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
US6472286B1 (en) 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
US6586818B1 (en) * 2002-03-08 2003-07-01 International Business Machines Corporation Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor

Also Published As

Publication number Publication date
US7074687B2 (en) 2006-07-11
US20040195630A1 (en) 2004-10-07
WO2004090940A2 (en) 2004-10-21
WO2004090940A3 (en) 2005-11-03
CN1823408A (zh) 2006-08-23
KR101054664B1 (ko) 2011-08-08
TW200509358A (en) 2005-03-01
JP2006522489A (ja) 2006-09-28
KR20050118719A (ko) 2005-12-19
CN100587924C (zh) 2010-02-03

Similar Documents

Publication Publication Date Title
US6236087B1 (en) SCR cell for electrical overstress protection of electronic circuits
US7274047B2 (en) Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation
US8680620B2 (en) Bi-directional blocking voltage protection devices and methods of forming the same
US8093623B2 (en) Semiconductor integrated circuit
CN101506974B (zh) 利用沟槽隔离形成的无闭锁垂直瞬态电压抑制二极管阵列结构
US8456785B2 (en) Semiconductor ESD device and method
US9728512B2 (en) Electro static discharge clamping device
US20110300678A1 (en) Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch
US8107203B2 (en) Electrostatic discharge protection device
JP2006523965A (ja) シリコンオンインシュレータ技術を対象とする静電放電（ｅｓｄ）保護用低電圧シリコン制御整流器（ｓｃｒ）
US20050179087A1 (en) LDMOS transistor with improved ESD protection
JP4532480B2 (ja) Ｅｓｄ保護デバイスの製造方法
KR100504203B1 (ko) 반도체장치의 보호소자
KR100750588B1 (ko) 정전기 방전 보호회로
KR100877154B1 (ko) 3중-웰 저전압 트리거 ｅｓｄ 보호 소자
US20070170517A1 (en) CMOS devices adapted to reduce latchup and methods of manufacturing the same
KR102139088B1 (ko) 높은 홀딩 전류를 갖는 정전기 방전 보호소자
KR100347397B1 (ko) 반도체 집적회로용 입출력 보호 장치
KR100612948B1 (ko) 낮은 항복전압을 갖는 정전기 보호회로의 트랜지스터
JP2009038189A (ja) 半導体装置、電圧供給システムおよび半導体装置の製造方法
KR100236327B1 (ko) 이에스디(esd) 보호회로
KR100230404B1 (ko) 정전방전 보호장치
TW202523147A (zh) 靜電放電保護裝置
KR100232226B1 (ko) 이에스디 보호회로
KR20050106929A (ko) 정전기 보호회로의 트랜지스터 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070314

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070314

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100331

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100406

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100416

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100518

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100610

R150 Certificate of patent or registration of utility model

Ref document number: 4532480

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130618

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees