JP4532480B2 - Esd保護デバイスの製造方法 - Google Patents
Esd保護デバイスの製造方法 Download PDFInfo
- Publication number
- JP4532480B2 JP4532480B2 JP2006509505A JP2006509505A JP4532480B2 JP 4532480 B2 JP4532480 B2 JP 4532480B2 JP 2006509505 A JP2006509505 A JP 2006509505A JP 2006509505 A JP2006509505 A JP 2006509505A JP 4532480 B2 JP4532480 B2 JP 4532480B2
- Authority
- JP
- Japan
- Prior art keywords
- base region
- esd
- region
- esd protection
- protection device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 230000015556 catabolic process Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 17
- 230000008901 benefit Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
アジス・アメラセケラ(Ajith Amerasekera)およびチャルバカ・デュブウリ(Charvaka Duvuury)、シリコン・集積回路におけるESD(ESD in Silicon Integrated Circuits)(第2版)、ジョン・ワイリ&サンズ(John Wiley & Sons)(2002年) アルバート H.ワング(Albert H. Wang)、集積回路に対するオン・チップESD保護(On−Chip ESD Protection for Integrated Circuits) IC設計の観点(An IC Design Perspective)、クルワ・アカデミック出版(Kluwer Academic Publishers)(2002年)
Claims (5)
- ESD保護デバイス(20)の製造方法であって、
第1の導電型(N)のコレクタ層(21)を用意することと、
前記コレクタ層(21)内に第1のベース領域(221)を形成することであって、前記第1のベース領域(221)は第2の導電型(P)を有することと、
前記第1のベース領域(221)内に第2のベース領域(222)を形成することであって、前記第2のベース領域(222)は第2の導電型(P+)を有することと、
を含み、
前記第1のベース領域(221)が前記第2のベース領域(222)よりも深くなるように、且つ、前記第2のベース領域(222)が前記第1のベース領域(221)よりも高濃度にドープされるように、前記第1のベース領域(221)及び前記第2のベース領域(222)は形成され、
前記第2のベース領域(222)を形成するためには、
単一のマスク層(62)を用いて、フォトレジストを前記第1のベース領域(221)上に、所定の横方向の寸法(S)を有するように露出した中心領域が残るようにパターニングすることと、
前記第1のベース領域(221)よりも浅く、且つ前記第1のベース領域(221)よりもドーパント濃度(P+)の大きな前記第2のベース領域(222)を、前記中心領域への注入によって形成することと
によって行なわれることを特徴とする、ESD保護デバイス(20)の製造方法。 - 前記第1の導電型(N)はN型であり、前記第2の導電型(P)はP型であることを特徴とする、請求項1に記載のESD保護デバイス(20)の製造方法。
- 前記第1のベース領域(521)が部分的にのみ前記第2のベース領域(522)を取り囲むように、前記第1のベース領域(521)及び前記第2のベース領域(522)は形成されていることを特徴とする、請求項1に記載のESD保護デバイス(20)の製造方法。
- 前記パターニングは、ESD応答を引き起こすのに有効な所定の横方向寸法(S)を確立し、前記ESD応答において前記コレクタ層(21)と前記第1のベース領域(221)の間における垂直方向の絶縁破壊は、前記コレクタ層(21)と前記第2のベース領域(222)の間における垂直方向の絶縁破壊よりも支配的であることを特徴とする、請求項1に記載のESD保護デバイス(20)の製造方法。
- 前記パターニングは、ESD応答を引き起こすのに有効な所定の横方向寸法(S)を確立し、前記ESD応答において前記コレクタ層(21)と前記第2のベース領域(222)の間における垂直方向の絶縁破壊は、前記コレクタ層(21)と前記第1のベース領域(221)の間における垂直方向の絶縁破壊よりも支配的であることを特徴とする、請求項1に記載のESD保護デバイス(20)の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/407,687 US7074687B2 (en) | 2003-04-04 | 2003-04-04 | Method for forming an ESD protection device |
PCT/US2004/009815 WO2004090940A2 (en) | 2003-04-04 | 2004-03-31 | Esd protection device and method making the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006522489A JP2006522489A (ja) | 2006-09-28 |
JP2006522489A5 JP2006522489A5 (ja) | 2007-05-17 |
JP4532480B2 true JP4532480B2 (ja) | 2010-08-25 |
Family
ID=33097596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006509505A Expired - Fee Related JP4532480B2 (ja) | 2003-04-04 | 2004-03-31 | Esd保護デバイスの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7074687B2 (ja) |
JP (1) | JP4532480B2 (ja) |
KR (1) | KR101054664B1 (ja) |
CN (1) | CN100587924C (ja) |
TW (1) | TW200509358A (ja) |
WO (1) | WO2004090940A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7723823B2 (en) * | 2008-07-24 | 2010-05-25 | Freescale Semiconductor, Inc. | Buried asymmetric junction ESD protection device |
US9356443B2 (en) * | 2012-07-31 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD clamp for multiple power rails |
CN206946908U (zh) * | 2017-06-28 | 2018-01-30 | 罗伯特·博世有限公司 | 高侧栅极驱动器 |
CN111599859B (zh) * | 2019-02-21 | 2023-06-23 | 株洲中车时代半导体有限公司 | 一种具有过压保护功能的晶闸管及制造方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1436703A (en) * | 1921-03-07 | 1922-11-28 | Herman W Fisher | Rope handle |
US1584122A (en) * | 1924-08-07 | 1926-05-11 | Mark M Moore | Skipping device |
DE1930746U (de) * | 1965-01-13 | 1966-01-05 | Jan Hendrik Otto | Sprungseil. |
US4090705A (en) * | 1977-03-21 | 1978-05-23 | Ross Young | Jump rope |
US4505474A (en) * | 1984-05-25 | 1985-03-19 | Mattox Ernest M | Weighted elastomeric jumping device |
US4801137A (en) * | 1987-10-26 | 1989-01-31 | Shane Douglass | Variable weight hand held exercise apparatus |
US4890829A (en) * | 1988-09-19 | 1990-01-02 | Priscilla Burton | Jump rope |
JPH04291953A (ja) * | 1991-03-20 | 1992-10-16 | Fujitsu Ltd | 保護回路 |
IT1253682B (it) | 1991-09-12 | 1995-08-22 | Sgs Thomson Microelectronics | Struttura di protezione dalle scariche elettrostatiche |
US5284458A (en) * | 1992-02-05 | 1994-02-08 | Perry Deborah A | Exercise device |
US5215509A (en) * | 1992-05-18 | 1993-06-01 | Meyer/Glass Design | Rope jumping device |
US5477414A (en) | 1993-05-03 | 1995-12-19 | Xilinx, Inc. | ESD protection circuit |
JP2601143B2 (ja) * | 1993-06-17 | 1997-04-16 | 日本電気株式会社 | 半導体装置 |
US5369054A (en) * | 1993-07-07 | 1994-11-29 | Actel Corporation | Circuits for ESD protection of metal-to-metal antifuses during processing |
EP0700089A1 (en) * | 1994-08-19 | 1996-03-06 | STMicroelectronics S.r.l. | A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit |
EP0730300B1 (en) * | 1995-02-28 | 2002-01-02 | STMicroelectronics S.r.l. | Device for the protection of an integrated circuit against electrostatic discharges |
US5940258A (en) | 1996-02-29 | 1999-08-17 | Texas Instruments Incorporated | Semiconductor ESD protection circuit |
US6125021A (en) | 1996-04-30 | 2000-09-26 | Texas Instruments Incorporated | Semiconductor ESD protection circuit |
US5850095A (en) | 1996-09-24 | 1998-12-15 | Texas Instruments Incorporated | ESD protection circuit using zener diode and interdigitated NPN transistor |
US5821572A (en) * | 1996-12-17 | 1998-10-13 | Symbios, Inc. | Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection |
US5982217A (en) | 1997-02-19 | 1999-11-09 | Texas Instruments Incorporated | PNP driven NMOS ESD protection circuit |
US6140683A (en) | 1997-05-08 | 2000-10-31 | Texas Instruments Incorporated | Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection |
US5898205A (en) | 1997-07-11 | 1999-04-27 | Taiwan Semiconductor Manufacturing Co. Ltd. | Enhanced ESD protection circuitry |
US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
US6310379B1 (en) | 1999-06-03 | 2001-10-30 | Texas Instruments Incorporated | NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors |
US6424013B1 (en) | 1999-07-09 | 2002-07-23 | Texas Instruments Incorporated | Body-triggered ESD protection circuit |
US6249410B1 (en) | 1999-08-23 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit without overstress gate-driven effect |
TW469622B (en) | 1999-09-13 | 2001-12-21 | Koninkl Philips Electronics Nv | Semiconductor device with ESD protection |
US6218226B1 (en) | 2000-01-21 | 2001-04-17 | Vanguard International Semiconductor Corporation | Method of forming an ESD protection device |
US6327126B1 (en) * | 2000-01-28 | 2001-12-04 | Motorola, Inc. | Electrostatic discharge circuit |
US6385021B1 (en) * | 2000-04-10 | 2002-05-07 | Motorola, Inc. | Electrostatic discharge (ESD) protection circuit |
US6472286B1 (en) | 2000-08-09 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Bipolar ESD protection structure |
US6586818B1 (en) * | 2002-03-08 | 2003-07-01 | International Business Machines Corporation | Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement |
US6724603B2 (en) * | 2002-08-09 | 2004-04-20 | Motorola, Inc. | Electrostatic discharge protection circuitry and method of operation |
US6879476B2 (en) * | 2003-01-22 | 2005-04-12 | Freescale Semiconductor, Inc. | Electrostatic discharge circuit and method therefor |
-
2003
- 2003-04-04 US US10/407,687 patent/US7074687B2/en not_active Expired - Lifetime
-
2004
- 2004-03-31 KR KR1020057018867A patent/KR101054664B1/ko active IP Right Grant
- 2004-03-31 JP JP2006509505A patent/JP4532480B2/ja not_active Expired - Fee Related
- 2004-03-31 WO PCT/US2004/009815 patent/WO2004090940A2/en active Application Filing
- 2004-03-31 CN CN200480009252A patent/CN100587924C/zh not_active Expired - Fee Related
- 2004-04-05 TW TW093109400A patent/TW200509358A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2004090940A2 (en) | 2004-10-21 |
US7074687B2 (en) | 2006-07-11 |
CN100587924C (zh) | 2010-02-03 |
US20040195630A1 (en) | 2004-10-07 |
KR101054664B1 (ko) | 2011-08-08 |
WO2004090940A3 (en) | 2005-11-03 |
JP2006522489A (ja) | 2006-09-28 |
KR20050118719A (ko) | 2005-12-19 |
CN1823408A (zh) | 2006-08-23 |
TW200509358A (en) | 2005-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6236087B1 (en) | SCR cell for electrical overstress protection of electronic circuits | |
US7274047B2 (en) | Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation | |
JP6109714B2 (ja) | 統合された供給クランプを有するインターフェース保護装置およびそれを形成する方法 | |
US8680620B2 (en) | Bi-directional blocking voltage protection devices and methods of forming the same | |
US8093623B2 (en) | Semiconductor integrated circuit | |
US8456785B2 (en) | Semiconductor ESD device and method | |
US20110300678A1 (en) | Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch | |
US9728512B2 (en) | Electro static discharge clamping device | |
KR20060006036A (ko) | 실리콘-온-인슐레이터 기술에서의 정전기 방전(esd)보호를 위한 저전압 실리콘제어정류기(scr) | |
US8107203B2 (en) | Electrostatic discharge protection device | |
US20050179087A1 (en) | LDMOS transistor with improved ESD protection | |
KR100877154B1 (ko) | 3중-웰 저전압 트리거 esd 보호 소자 | |
US20070170517A1 (en) | CMOS devices adapted to reduce latchup and methods of manufacturing the same | |
KR100750588B1 (ko) | 정전기 방전 보호회로 | |
JP4532480B2 (ja) | Esd保護デバイスの製造方法 | |
KR100504203B1 (ko) | 반도체장치의 보호소자 | |
KR100347397B1 (ko) | 반도체 집적회로용 입출력 보호 장치 | |
KR102139088B1 (ko) | 높은 홀딩 전류를 갖는 정전기 방전 보호소자 | |
KR100612948B1 (ko) | 낮은 항복전압을 갖는 정전기 보호회로의 트랜지스터 | |
KR100236327B1 (ko) | 이에스디(esd) 보호회로 | |
CN110571212A (zh) | 静电保护结构及其形成方法和工作方法、静电保护电路 | |
KR100230404B1 (ko) | 정전방전 보호장치 | |
KR100232226B1 (ko) | 이에스디 보호회로 | |
CN115249701A (zh) | 静电放电保护结构及其形成方法 | |
JP2009038189A (ja) | 半導体装置、電圧供給システムおよび半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070314 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070314 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100331 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100416 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100518 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4532480 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130618 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |