KR101054664B1 - Ｅｓｄ 보호 디바이스 및 그 제조 방법 - Google Patents

Ｅｓｄ 보호 디바이스 및 그 제조 방법 Download PDF

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Publication number
KR101054664B1
KR101054664B1 KR1020057018867A KR20057018867A KR101054664B1 KR 101054664 B1 KR101054664 B1 KR 101054664B1 KR 1020057018867 A KR1020057018867 A KR 1020057018867A KR 20057018867 A KR20057018867 A KR 20057018867A KR 101054664 B1 KR101054664 B1 KR 101054664B1
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South Korea
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esd
region
base
esd protection
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Expired - Fee Related
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KR1020057018867A
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English (en)
Korean (ko)
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KR20050118719A (ko
Inventor
제임스 디. 화이트필드
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프리스케일 세미컨덕터, 인크.
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Publication of KR20050118719A publication Critical patent/KR20050118719A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body

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  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020057018867A 2003-04-04 2004-03-31 Ｅｓｄ 보호 디바이스 및 그 제조 방법 Expired - Fee Related KR101054664B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/407,687 2003-04-04
US10/407,687 US7074687B2 (en) 2003-04-04 2003-04-04 Method for forming an ESD protection device
PCT/US2004/009815 WO2004090940A2 (en) 2003-04-04 2004-03-31 Esd protection device and method making the same

Publications (2)

Publication Number Publication Date
KR20050118719A KR20050118719A (ko) 2005-12-19
KR101054664B1 true KR101054664B1 (ko) 2011-08-08

Family

ID=33097596

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057018867A Expired - Fee Related KR101054664B1 (ko) 2003-04-04 2004-03-31 Ｅｓｄ 보호 디바이스 및 그 제조 방법

Country Status (6)

Country Link
US (1) US7074687B2 (enExample)
JP (1) JP4532480B2 (enExample)
KR (1) KR101054664B1 (enExample)
CN (1) CN100587924C (enExample)
TW (1) TW200509358A (enExample)
WO (1) WO2004090940A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
US9356443B2 (en) * 2012-07-31 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. ESD clamp for multiple power rails
CN206946908U (zh) * 2017-06-28 2018-01-30 罗伯特·博世有限公司 高侧栅极驱动器
TWI841213B (zh) * 2018-12-24 2024-05-01 晶元光電股份有限公司 半導體元件
CN111599859B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种具有过压保护功能的晶闸管及制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218226B1 (en) 2000-01-21 2001-04-17 Vanguard International Semiconductor Corporation Method of forming an ESD protection device

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US1584122A (en) * 1924-08-07 1926-05-11 Mark M Moore Skipping device
DE1930746U (de) * 1965-01-13 1966-01-05 Jan Hendrik Otto Sprungseil.
US4090705A (en) * 1977-03-21 1978-05-23 Ross Young Jump rope
US4505474A (en) * 1984-05-25 1985-03-19 Mattox Ernest M Weighted elastomeric jumping device
US4801137A (en) * 1987-10-26 1989-01-31 Shane Douglass Variable weight hand held exercise apparatus
US4890829A (en) * 1988-09-19 1990-01-02 Priscilla Burton Jump rope
JPH04291953A (ja) * 1991-03-20 1992-10-16 Fujitsu Ltd 保護回路
IT1253682B (it) 1991-09-12 1995-08-22 Sgs Thomson Microelectronics Struttura di protezione dalle scariche elettrostatiche
US5284458A (en) * 1992-02-05 1994-02-08 Perry Deborah A Exercise device
US5215509A (en) * 1992-05-18 1993-06-01 Meyer/Glass Design Rope jumping device
US5477414A (en) 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
JP2601143B2 (ja) * 1993-06-17 1997-04-16 日本電気株式会社 半導体装置
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
EP0700089A1 (en) * 1994-08-19 1996-03-06 STMicroelectronics S.r.l. A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit
EP0730300B1 (en) * 1995-02-28 2002-01-02 STMicroelectronics S.r.l. Device for the protection of an integrated circuit against electrostatic discharges
US5940258A (en) 1996-02-29 1999-08-17 Texas Instruments Incorporated Semiconductor ESD protection circuit
US6125021A (en) 1996-04-30 2000-09-26 Texas Instruments Incorporated Semiconductor ESD protection circuit
US5850095A (en) 1996-09-24 1998-12-15 Texas Instruments Incorporated ESD protection circuit using zener diode and interdigitated NPN transistor
US5821572A (en) * 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
US5982217A (en) 1997-02-19 1999-11-09 Texas Instruments Incorporated PNP driven NMOS ESD protection circuit
US6140683A (en) 1997-05-08 2000-10-31 Texas Instruments Incorporated Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
US5898205A (en) 1997-07-11 1999-04-27 Taiwan Semiconductor Manufacturing Co. Ltd. Enhanced ESD protection circuitry
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US6310379B1 (en) 1999-06-03 2001-10-30 Texas Instruments Incorporated NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors
US6424013B1 (en) 1999-07-09 2002-07-23 Texas Instruments Incorporated Body-triggered ESD protection circuit
US6249410B1 (en) 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
TW469622B (en) 1999-09-13 2001-12-21 Koninkl Philips Electronics Nv Semiconductor device with ESD protection
US6327126B1 (en) * 2000-01-28 2001-12-04 Motorola, Inc. Electrostatic discharge circuit
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
US6472286B1 (en) 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
US6586818B1 (en) * 2002-03-08 2003-07-01 International Business Machines Corporation Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor

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Publication number Priority date Publication date Assignee Title
US6218226B1 (en) 2000-01-21 2001-04-17 Vanguard International Semiconductor Corporation Method of forming an ESD protection device

Also Published As

Publication number Publication date
CN1823408A (zh) 2006-08-23
CN100587924C (zh) 2010-02-03
JP2006522489A (ja) 2006-09-28
JP4532480B2 (ja) 2010-08-25
WO2004090940A2 (en) 2004-10-21
US20040195630A1 (en) 2004-10-07
KR20050118719A (ko) 2005-12-19
US7074687B2 (en) 2006-07-11
WO2004090940A3 (en) 2005-11-03
TW200509358A (en) 2005-03-01

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