JP4531194B2 - 電気光学装置及び電子機器 - Google Patents

電気光学装置及び電子機器 Download PDF

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Publication number
JP4531194B2
JP4531194B2 JP2000112782A JP2000112782A JP4531194B2 JP 4531194 B2 JP4531194 B2 JP 4531194B2 JP 2000112782 A JP2000112782 A JP 2000112782A JP 2000112782 A JP2000112782 A JP 2000112782A JP 4531194 B2 JP4531194 B2 JP 4531194B2
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Japan
Prior art keywords
insulating film
film
gate electrode
gate insulating
tft
Prior art date
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Expired - Fee Related
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JP2000112782A
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English (en)
Japanese (ja)
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JP2000356788A5 (enrdf_load_stackoverflow
JP2000356788A (ja
Inventor
舜平 山崎
英人 北角
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000112782A priority Critical patent/JP4531194B2/ja
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Publication of JP2000356788A5 publication Critical patent/JP2000356788A5/ja
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  • Liquid Crystal (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Memories (AREA)
JP2000112782A 1999-04-15 2000-04-14 電気光学装置及び電子機器 Expired - Fee Related JP4531194B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000112782A JP4531194B2 (ja) 1999-04-15 2000-04-14 電気光学装置及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10866799 1999-04-15
JP11-108667 1999-04-15
JP2000112782A JP4531194B2 (ja) 1999-04-15 2000-04-14 電気光学装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2000356788A JP2000356788A (ja) 2000-12-26
JP2000356788A5 JP2000356788A5 (enrdf_load_stackoverflow) 2007-06-14
JP4531194B2 true JP4531194B2 (ja) 2010-08-25

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JP2000112782A Expired - Fee Related JP4531194B2 (ja) 1999-04-15 2000-04-14 電気光学装置及び電子機器

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JP (1) JP4531194B2 (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217274A (ja) * 2001-01-18 2002-08-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4209606B2 (ja) 2001-08-17 2009-01-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI282126B (en) 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
US7317205B2 (en) 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
JP3638926B2 (ja) * 2001-09-10 2005-04-13 株式会社半導体エネルギー研究所 発光装置及び半導体装置の作製方法
JP2003091245A (ja) 2001-09-18 2003-03-28 Semiconductor Energy Lab Co Ltd 表示装置
JP2005064427A (ja) * 2003-08-20 2005-03-10 Elpida Memory Inc 不揮発性ランダムアクセスメモリおよびその製造方法
US7652321B2 (en) 2004-03-08 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP4858671B2 (ja) * 2004-12-27 2012-01-18 セイコーエプソン株式会社 半導体装置
WO2007077850A1 (en) * 2005-12-27 2007-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5238178B2 (ja) * 2006-03-31 2013-07-17 株式会社半導体エネルギー研究所 半導体装置
WO2007138754A1 (ja) * 2006-05-31 2007-12-06 Sharp Kabushiki Kaisha 半導体装置、その製造方法、及び、表示装置
US7994000B2 (en) * 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR101420603B1 (ko) 2007-06-29 2014-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP2009021305A (ja) * 2007-07-10 2009-01-29 Denso Corp 不揮発性メモリトランジスタ
JP4592739B2 (ja) * 2007-11-15 2010-12-08 シャープ株式会社 表示装置、携帯機器
EP2075798A1 (en) * 2007-12-25 2009-07-01 TPO Displays Corp. Storage data unit using hot carrier stressing
JP5531720B2 (ja) * 2010-03-30 2014-06-25 ソニー株式会社 表示装置、表示装置の製造方法、及び、電子機器
US9171840B2 (en) * 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102282866B1 (ko) * 2012-07-20 2021-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치
JP5568615B2 (ja) * 2012-10-30 2014-08-06 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
JP5600791B2 (ja) * 2013-09-25 2014-10-01 株式会社半導体エネルギー研究所 表示装置および表示装置の作製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582787A (ja) * 1991-09-19 1993-04-02 Sony Corp 薄膜トランジスタ型不揮発性半導体メモリ装置
JPH05210364A (ja) * 1992-01-31 1993-08-20 Canon Inc 液晶パネル表示装置
JP3212060B2 (ja) * 1993-09-20 2001-09-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2805590B2 (ja) * 1993-09-20 1998-09-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3526986B2 (ja) * 1994-09-14 2004-05-17 株式会社半導体エネルギー研究所 半導体回路およびその作製方法
JPH1187545A (ja) * 1997-07-08 1999-03-30 Sony Corp 半導体不揮発性記憶装置およびその製造方法
JP3942701B2 (ja) * 1997-09-03 2007-07-11 株式会社半導体エネルギー研究所 表示装置の作製方法

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JP2000356788A (ja) 2000-12-26

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