JP4529141B2 - 露光装置及びそれを用いた半導体装置の製造方法 - Google Patents

露光装置及びそれを用いた半導体装置の製造方法 Download PDF

Info

Publication number
JP4529141B2
JP4529141B2 JP2005517741A JP2005517741A JP4529141B2 JP 4529141 B2 JP4529141 B2 JP 4529141B2 JP 2005517741 A JP2005517741 A JP 2005517741A JP 2005517741 A JP2005517741 A JP 2005517741A JP 4529141 B2 JP4529141 B2 JP 4529141B2
Authority
JP
Japan
Prior art keywords
mask
wafer
circuit pattern
photoresist
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005517741A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2005076322A1 (ja
Inventor
好彦 岡本
正巳 荻田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPWO2005076322A1 publication Critical patent/JPWO2005076322A1/ja
Application granted granted Critical
Publication of JP4529141B2 publication Critical patent/JP4529141B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/976—Temporary protective layer

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005517741A 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法 Expired - Fee Related JP4529141B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004031528 2004-02-09
JP2004031528 2004-02-09
PCT/JP2005/001669 WO2005076322A1 (ja) 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010080762A Division JP2010153922A (ja) 2004-02-09 2010-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2005076322A1 JPWO2005076322A1 (ja) 2008-02-21
JP4529141B2 true JP4529141B2 (ja) 2010-08-25

Family

ID=34836053

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005517741A Expired - Fee Related JP4529141B2 (ja) 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法
JP2010080762A Pending JP2010153922A (ja) 2004-02-09 2010-03-31 半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010080762A Pending JP2010153922A (ja) 2004-02-09 2010-03-31 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US8048614B2 (enExample)
JP (2) JP4529141B2 (enExample)
KR (2) KR101118834B1 (enExample)
WO (1) WO2005076322A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450769B2 (ja) * 2005-06-16 2010-04-14 富士フイルム株式会社 画像処理装置、画像描画装置及びシステム
JP6474655B2 (ja) * 2014-09-30 2019-02-27 エイブリック株式会社 レチクル透過率測定方法、投影露光装置および投影露光方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216717A (ja) * 1988-07-05 1990-01-19 Nikon Corp パターン投影装置
JPH06168866A (ja) * 1992-11-27 1994-06-14 Canon Inc 液浸式投影露光装置
JPH11260686A (ja) * 1998-03-11 1999-09-24 Toshiba Corp 露光方法
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2001002908A1 (en) * 1999-06-30 2001-01-11 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP2001117213A (ja) * 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法
JP2004191920A (ja) * 2002-12-09 2004-07-08 Cark Zeiss Smt Ag マイクロリソグラフィ用等の投影対物レンズ及び投影対物レンズの調整方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS63295350A (ja) 1987-05-26 1988-12-01 Ozen Corp シ−ト重複検知装置
JPH03137511A (ja) 1989-10-24 1991-06-12 Nkk Corp 二重管式連通管
JPH0852997A (ja) 1991-03-29 1996-02-27 Masaki Kawasaki 積層板構造の象嵌模様入り製品及びその製造方法
US5391441A (en) * 1992-02-21 1995-02-21 Hitachi, Ltd. Exposure mask and method of manufacture thereof
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6184083B1 (en) * 1997-06-30 2001-02-06 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2000183346A (ja) * 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
JP3495983B2 (ja) * 2000-12-28 2004-02-09 キヤノン株式会社 マスク及び投影露光装置
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
CN101727021A (zh) * 2004-02-13 2010-06-09 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216717A (ja) * 1988-07-05 1990-01-19 Nikon Corp パターン投影装置
JPH06168866A (ja) * 1992-11-27 1994-06-14 Canon Inc 液浸式投影露光装置
JPH11260686A (ja) * 1998-03-11 1999-09-24 Toshiba Corp 露光方法
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2001002908A1 (en) * 1999-06-30 2001-01-11 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP2001117213A (ja) * 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法
JP2004191920A (ja) * 2002-12-09 2004-07-08 Cark Zeiss Smt Ag マイクロリソグラフィ用等の投影対物レンズ及び投影対物レンズの調整方法

Also Published As

Publication number Publication date
KR20110091015A (ko) 2011-08-10
KR20070019705A (ko) 2007-02-15
KR101118787B1 (ko) 2012-03-20
US8048614B2 (en) 2011-11-01
JP2010153922A (ja) 2010-07-08
WO2005076322A1 (ja) 2005-08-18
JPWO2005076322A1 (ja) 2008-02-21
US20070117409A1 (en) 2007-05-24
US20110229824A1 (en) 2011-09-22
KR101118834B1 (ko) 2012-03-21

Similar Documents

Publication Publication Date Title
KR100240522B1 (ko) 반도체 집적 회로장치의 제조 방법
JP3197484B2 (ja) フォトマスク及びその製造方法
US6218089B1 (en) Photolithographic method
JP4646367B2 (ja) 半導体装置の製造方法および半導体装置
US6800421B2 (en) Method of fabrication of semiconductor integrated circuit device
US6551750B2 (en) Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
JP2002122980A (ja) 半導体集積回路装置の製造方法およびフォトマスクの製造方法
JP3164039B2 (ja) フォトマスク及びその製造方法
JP2002202585A (ja) フォトマスクの製造方法および半導体集積回路装置の製造方法
JP4529141B2 (ja) 露光装置及びそれを用いた半導体装置の製造方法
US12087579B2 (en) Method for forming semiconductor device
US6910203B2 (en) Photomask and method for qualifying the same with a prototype specification
US6593039B1 (en) Photoresist mask that combines attenuated and alternating phase shifting masks
US6576376B1 (en) Tri-tone mask process for dense and isolated patterns
JP3696982B2 (ja) 半導体集積回路露光用のフォトマスク
JP3639726B2 (ja) 計算装置及び計算方法
US7462426B2 (en) Method for producing a phase mask
US20100304278A1 (en) Method for Fabricating a Phase Shift Mask Using a Binary Blank
JP3238732B2 (ja) 半導体集積回路装置の製造方法
JP2004264385A (ja) 露光マスクおよびその製造方法ならびに露光方法
JPH05275303A (ja) 露光方法およびそれに用いるフォトマスク
JP2000019712A (ja) マスク及びそれを用いた露光方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080820

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100331

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100518

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100527

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130618

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees