JP4525062B2 - 露光装置及びデバイス製造方法、露光システム - Google Patents

露光装置及びデバイス製造方法、露光システム Download PDF

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JP4525062B2
JP4525062B2 JP2003410472A JP2003410472A JP4525062B2 JP 4525062 B2 JP4525062 B2 JP 4525062B2 JP 2003410472 A JP2003410472 A JP 2003410472A JP 2003410472 A JP2003410472 A JP 2003410472A JP 4525062 B2 JP4525062 B2 JP 4525062B2
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liquid
substrate
exposure
exposure apparatus
removal
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JP2005101487A (ja
JP2005101487A5 (enExample
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伸貴 馬込
宏明 高岩
大 荒井
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Nikon Corp
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003410472A 2002-12-10 2003-12-09 露光装置及びデバイス製造方法、露光システム Expired - Fee Related JP4525062B2 (ja)

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JP2003410472A JP4525062B2 (ja) 2002-12-10 2003-12-09 露光装置及びデバイス製造方法、露光システム

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JP2002357957 2002-12-10
JP2003305279 2003-08-28
JP2003410472A JP4525062B2 (ja) 2002-12-10 2003-12-09 露光装置及びデバイス製造方法、露光システム

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JP2009035767A Division JP4525827B2 (ja) 2002-12-10 2009-02-18 露光装置及びデバイス製造方法、露光システム

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JP2005101487A5 JP2005101487A5 (enExample) 2009-04-02
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EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
KR20180120816A (ko) 2003-08-21 2018-11-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP2006024715A (ja) 2004-07-07 2006-01-26 Toshiba Corp リソグラフィー装置およびパターン形成方法
JP2006049757A (ja) * 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置
EP1814144B1 (en) 2004-10-26 2012-06-06 Nikon Corporation Substrate processing method and device production system
JP4522329B2 (ja) * 2005-06-24 2010-08-11 株式会社Sokudo 基板処理装置
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
JP4753641B2 (ja) * 2005-07-01 2011-08-24 株式会社Ｓｏｋｕｄｏ 基板処理システム
JP2007036121A (ja) * 2005-07-29 2007-02-08 Dainippon Screen Mfg Co Ltd 基板処理装置
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
JP4937559B2 (ja) * 2005-09-14 2012-05-23 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP4998854B2 (ja) * 2006-02-03 2012-08-15 株式会社ニコン 基板処理方法、基板処理システム、プログラム及び記録媒体
JP2007317987A (ja) * 2006-05-29 2007-12-06 Sokudo:Kk 基板処理装置および基板処理方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US20080156356A1 (en) * 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
JP4672763B2 (ja) * 2008-09-16 2011-04-20 株式会社東芝 レジストパターン形成方法
JP5970921B2 (ja) * 2012-04-02 2016-08-17 セイコーエプソン株式会社 ロボット

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US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JP2592475B2 (ja) * 1987-12-30 1997-03-19 株式会社日立製作所 投影露光装置及びそのパターンオフセツト補正方法
JPH03215867A (ja) * 1990-01-19 1991-09-20 Fujitsu Ltd ポジレジストの現像処理方法
JPH05304072A (ja) * 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH06332167A (ja) * 1993-05-24 1994-12-02 Shin Etsu Chem Co Ltd ポジ型フォトレジスト組成物及びパターン形成方法
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JP4029183B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2001085295A (ja) * 1999-09-09 2001-03-30 Tokyo Electron Ltd 基板処理装置び基板処理方法
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
WO2004053952A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate

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