JP4525062B2 - 露光装置及びデバイス製造方法、露光システム - Google Patents

露光装置及びデバイス製造方法、露光システム Download PDF

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Publication number
JP4525062B2
JP4525062B2 JP2003410472A JP2003410472A JP4525062B2 JP 4525062 B2 JP4525062 B2 JP 4525062B2 JP 2003410472 A JP2003410472 A JP 2003410472A JP 2003410472 A JP2003410472 A JP 2003410472A JP 4525062 B2 JP4525062 B2 JP 4525062B2
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liquid
substrate
exposure
exposure apparatus
removal
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JP2005101487A5 (cg-RX-API-DMAC7.html
JP2005101487A (ja
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伸貴 馬込
宏明 高岩
大 荒井
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Nikon Corp
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Nikon Corp
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003410472A 2002-12-10 2003-12-09 露光装置及びデバイス製造方法、露光システム Expired - Fee Related JP4525062B2 (ja)

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JP2003410472A JP4525062B2 (ja) 2002-12-10 2003-12-09 露光装置及びデバイス製造方法、露光システム

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JP2002357957 2002-12-10
JP2003305279 2003-08-28
JP2003410472A JP4525062B2 (ja) 2002-12-10 2003-12-09 露光装置及びデバイス製造方法、露光システム

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JP2009035767A Division JP4525827B2 (ja) 2002-12-10 2009-02-18 露光装置及びデバイス製造方法、露光システム

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JP2005101487A JP2005101487A (ja) 2005-04-14
JP2005101487A5 JP2005101487A5 (cg-RX-API-DMAC7.html) 2009-04-02
JP4525062B2 true JP4525062B2 (ja) 2010-08-18

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101525335B1 (ko) 2003-04-11 2015-06-03 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP1662554A4 (en) 2003-08-21 2008-01-23 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND METHOD FOR PRODUCING A DEVICE
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN105467775B (zh) 2004-06-09 2018-04-10 株式会社尼康 曝光装置及元件制造方法
JP2006024715A (ja) 2004-07-07 2006-01-26 Toshiba Corp リソグラフィー装置およびパターン形成方法
JP2006049757A (ja) * 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置
JP4665712B2 (ja) 2004-10-26 2011-04-06 株式会社ニコン 基板処理方法、露光装置及びデバイス製造方法
JP4522329B2 (ja) * 2005-06-24 2010-08-11 株式会社Sokudo 基板処理装置
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
JP4753641B2 (ja) * 2005-07-01 2011-08-24 株式会社Sokudo 基板処理システム
JP2007036121A (ja) * 2005-07-29 2007-02-08 Dainippon Screen Mfg Co Ltd 基板処理装置
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
JP4937559B2 (ja) * 2005-09-14 2012-05-23 株式会社Sokudo 基板処理装置および基板処理方法
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
JPWO2007055237A1 (ja) * 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
KR20080097991A (ko) * 2006-02-03 2008-11-06 가부시키가이샤 니콘 기판 처리 방법, 기판 처리 시스템, 프로그램 및 기록매체
JP2007317987A (ja) * 2006-05-29 2007-12-06 Sokudo:Kk 基板処理装置および基板処理方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US20080156356A1 (en) * 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
JP4672763B2 (ja) * 2008-09-16 2011-04-20 株式会社東芝 レジストパターン形成方法
JP5970921B2 (ja) * 2012-04-02 2016-08-17 セイコーエプソン株式会社 ロボット

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JP2592475B2 (ja) * 1987-12-30 1997-03-19 株式会社日立製作所 投影露光装置及びそのパターンオフセツト補正方法
JPH03215867A (ja) * 1990-01-19 1991-09-20 Fujitsu Ltd ポジレジストの現像処理方法
JPH05304072A (ja) * 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH06332167A (ja) * 1993-05-24 1994-12-02 Shin Etsu Chem Co Ltd ポジ型フォトレジスト組成物及びパターン形成方法
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JP4029183B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
KR100512450B1 (ko) * 1996-12-24 2006-01-27 에이에스엠엘 네델란즈 비.브이. 두개의물체홀더를가진이차원적으로안정화된위치설정장치와이런위치설정장치를구비한리소그래픽장치
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2001085295A (ja) * 1999-09-09 2001-03-30 Tokyo Electron Ltd 基板処理装置び基板処理方法
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
SG171468A1 (en) * 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate

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