JP4514402B2 - 半導体素子及びその製造方法 - Google Patents

半導体素子及びその製造方法 Download PDF

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JP4514402B2
JP4514402B2 JP2002312959A JP2002312959A JP4514402B2 JP 4514402 B2 JP4514402 B2 JP 4514402B2 JP 2002312959 A JP2002312959 A JP 2002312959A JP 2002312959 A JP2002312959 A JP 2002312959A JP 4514402 B2 JP4514402 B2 JP 4514402B2
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nanotube
electrode
semiconductor layer
semiconductor
nanotubes
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JP2004152787A (ja
JP2004152787A5 (OSRAM
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敦央 井上
信之 松本
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Sharp Corp
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Sharp Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
JP2002312959A 2002-10-28 2002-10-28 半導体素子及びその製造方法 Expired - Fee Related JP4514402B2 (ja)

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JP2002312959A JP4514402B2 (ja) 2002-10-28 2002-10-28 半導体素子及びその製造方法

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JP2002312959A JP4514402B2 (ja) 2002-10-28 2002-10-28 半導体素子及びその製造方法

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JP2004152787A JP2004152787A (ja) 2004-05-27
JP2004152787A5 JP2004152787A5 (OSRAM) 2005-10-06
JP4514402B2 true JP4514402B2 (ja) 2010-07-28

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Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768081B2 (en) * 2004-10-27 2010-08-03 Koninklijke Philips Electronics N V Semiconductor device with tunable energy band gap
KR101001744B1 (ko) * 2004-12-27 2010-12-15 삼성전자주식회사 탄소 나노 튜브를 이용한 광전 변환 전극 및 이를 구비한태양 전지
CN100356149C (zh) * 2005-01-14 2007-12-19 清华大学 多壁碳纳米管束－金属异质结的光电传感器和成像仪探头
CN100356148C (zh) * 2005-01-14 2007-12-19 清华大学 基于无序多壁碳纳米管的红外激光功率探测器
AU2006297870B2 (en) * 2005-03-01 2009-04-30 Georgia Tech Research Corporation Three dimensional multi-junction photovoltaic device
KR101129094B1 (ko) * 2005-05-26 2012-03-23 엘지이노텍 주식회사 로드형 발광 소자 및 그의 제조방법
EP1727216B1 (en) * 2005-05-24 2019-04-24 LG Electronics, Inc. Rod type light emitting diode and method for fabricating the same
JP2007027625A (ja) * 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 有機太陽電池及びその製造方法
JP4696751B2 (ja) * 2005-07-26 2011-06-08 日立造船株式会社 カーボンナノチューブを用いた電極の製造方法
JP5242009B2 (ja) * 2005-09-29 2013-07-24 国立大学法人名古屋大学 カーボンナノウォールを用いた光起電力素子
WO2007037343A1 (ja) * 2005-09-29 2007-04-05 Nu Eco Engineering Co., Ltd. カーボンナノ構造体を用いたダイオード及び光起電力素子
US7635600B2 (en) * 2005-11-16 2009-12-22 Sharp Laboratories Of America, Inc. Photovoltaic structure with a conductive nanowire array electrode
JP2007194559A (ja) * 2006-01-23 2007-08-02 National Institute For Materials Science 複合光電変換素子及びその製造方法
WO2007127870A2 (en) * 2006-04-26 2007-11-08 The Regents Of The University Of California Organic light emitting diodes with structured electrodes
US7893348B2 (en) * 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
EP1892769A2 (en) * 2006-08-25 2008-02-27 General Electric Company Single conformal junction nanowire photovoltaic devices
JP2008098220A (ja) * 2006-10-06 2008-04-24 Asahi Kasei Corp 発光ダイオード
DE102007009790A1 (de) * 2007-02-27 2008-08-28 Bayer Technology Services Gmbh Hybride organische Solarzellen mit von photoaktiven Oberflächenmodifikatoren umgebenen Halbleiter-Nanopartikeln
US7910461B2 (en) * 2007-08-28 2011-03-22 California Institute Of Technology Method for reuse of wafers for growth of vertically-aligned wire arrays
KR100953448B1 (ko) 2008-04-02 2010-04-20 한국기계연구원 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법
WO2010019887A1 (en) * 2008-08-14 2010-02-18 Brookhaven Science Associates Structured pillar electrodes
KR101454686B1 (ko) 2008-09-17 2014-10-28 삼성전자주식회사 에너지 변환 장치 및 방법
JP5287137B2 (ja) * 2008-10-22 2013-09-11 コニカミノルタ株式会社 有機光電変換素子の製造方法
KR100968745B1 (ko) 2008-11-07 2010-07-08 (주)세현 유기 발광장치 및 이를 갖는 유기발광 표시장치
KR101068646B1 (ko) 2009-05-20 2011-09-28 한국기계연구원 쇼트키 접합 태양 전지 및 이의 제조 방법
JP5582744B2 (ja) * 2009-08-20 2014-09-03 日立造船株式会社 太陽電池およびその製造方法並びに太陽電池装置
US8808933B2 (en) 2009-11-30 2014-08-19 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
CN102097502A (zh) * 2009-12-09 2011-06-15 英属开曼群岛商精曜有限公司 薄膜太阳能电池及其制作方法
KR101658534B1 (ko) * 2009-12-15 2016-09-23 엘지디스플레이 주식회사 태양전지 및 그 제조방법
WO2011090336A2 (ko) 2010-01-25 2011-07-28 (주)루미나노 전기장 향상 효과에 의하여 개선된 광전환 효율을 나타내는 태양전지
US9263612B2 (en) 2010-03-23 2016-02-16 California Institute Of Technology Heterojunction wire array solar cells
US10090425B2 (en) 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
JP5936186B2 (ja) * 2012-03-14 2016-06-15 日立造船株式会社 太陽電池の製造方法
WO2013152132A1 (en) 2012-04-03 2013-10-10 The California Institute Of Technology Semiconductor structures for fuel generation
KR101294368B1 (ko) 2012-05-09 2013-08-08 한국광기술원 실리콘기판을 이용한 적층형 고효율 태양전지 생성 방법
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
EP3509115B1 (en) * 2016-08-31 2024-09-11 Nissan Motor Co., Ltd. Photovoltaic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3513738B2 (ja) * 1996-09-30 2004-03-31 中部電力株式会社 ナノチューブ体のチタニアの製造方法
JP2001052652A (ja) * 1999-06-18 2001-02-23 Cheol Jin Lee 白色光源及びその製造方法
JP3740331B2 (ja) * 1999-09-22 2006-02-01 キヤノン株式会社 光電変換装置及びその製造方法

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