JP4511215B2 - セラミック多層配線基板の製造方法 - Google Patents
セラミック多層配線基板の製造方法 Download PDFInfo
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- JP4511215B2 JP4511215B2 JP2004050560A JP2004050560A JP4511215B2 JP 4511215 B2 JP4511215 B2 JP 4511215B2 JP 2004050560 A JP2004050560 A JP 2004050560A JP 2004050560 A JP2004050560 A JP 2004050560A JP 4511215 B2 JP4511215 B2 JP 4511215B2
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- ceramic
- resin
- resin sheet
- sheet
- wiring board
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- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 2
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
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- 229910052670 petalite Inorganic materials 0.000 description 2
- 239000010665 pine oil Substances 0.000 description 2
- 229920000379 polypropylene carbonate Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
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Images
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- Production Of Multi-Layered Print Wiring Board (AREA)
Description
[1.グリーンシートの準備]
SiO2、Al2O3、CaO、ZnO、B2O3からなるガラスセラミック原料粉末100質量部に対して、表1に示す樹脂バインダーを11質量部、可塑剤としてフタル酸ジブチルを5質量部添加し、トルエンを有機溶剤としてボールミルにより36時間混合しスラリーを調整した。得られたスラリーを用いてドクターブレード法により成形、乾燥して厚さ0.3mmのグリーンシートを作製した。次に、このグリーンシートに、直径が200μmのスルーホールをパンチングで形成した。
2−1)スルーホール充填用導体ペースト(ビア導体形成用)
Cu粉体100質量部に対し、表1に示す樹脂バインダー2重量部、テルピネオールおよびブチルカルビトールアセテートの混合溶剤を4重量部、フタル酸エステル系の可塑剤(DOP,DBPの混合物)を2重量部添加し、これらを攪拌して混合した。その後、Cu粉体および樹脂バインダー類の凝集体がなくなるまで3本ロールミルで混合して導体ペーストを調製した。
Cu粉体100質量部に対し、表1に示す樹脂バインダー(ビア導体部と共通のものを使用)3重量部、テルピネオールおよびブチルカルビトールアセテートの混合溶剤を10重量部、フタル酸エステル系の可塑剤(DOP,DBPの混合物)を10重量部添加し、これらを攪拌して混合した。その後、Cu粉体および樹脂バインダー類の凝集体がなくなるまで3本ロールミルで混合して導体ペーストを調製した。
架橋イソブチルメタクリレートの樹脂ビーズ100重量部に対して、樹脂バインダーとしてイソブチルメタクリレート55重量部、DOP5重量部、ポリエチレングリコール5重量部、メチルイソブチルケトン150重量部を加えた組成物を混合してスラリーとした。このスラリーを用いてドクターブレード法により成形し、乾燥して厚さ300μmの樹脂シート2を作製した。
樹脂シート2を用いて図2のグリーンシート積層体を形成した。すなわち、図1の打ち抜き法によって、グリーンシートA1,A2(縦50mm×横50mm×厚さ0.3mm、貫通孔部分:縦2mm×横2mm×深さ0.3mm)に樹脂シート2aをそれぞれ嵌め込んだ。
実施例1〜9におけるセラミック充填層の樹脂バインダー、導体ペーストの樹脂バインダーを表1に示すものを使用し、樹脂シートの樹脂バインダーとしてエチルセルロースを使用する以外は、実施例1〜9と同様にしてセラミック多層配線基板を作製した。なお、焼成は350℃、3時間保持して十分に樹脂シートの脱バインダー工程を行った後、850℃で3時間保持してさらに脱バインダーを行い、続けて950〜1000℃で行った。
樹脂シート2を嵌め込まない以外は実施例1〜9と同様にしてセラミック多層配線基板を作製した。
セラミック充填層を形成しない以外は実施例1〜9と同様にしてセラミック多層配線基板を作製した。
[1.グリーンシートの準備]
SiO2、Al2O3、CaO、ZnO、B2O3からなるガラスセラミック原料粉末100質量部に対して、表3に示す樹脂バインダーを11質量部、可塑剤としてフタル酸ジブチルを5質量部添加し、トルエンを有機溶剤としてボールミルにより36時間混合しスラリーを調整した。得られたスラリーを用いてドクターブレード法により成形し、乾燥して厚さ0.3mmのグリーンシートを作製した。次に、このグリーンシートに、直径が200μmのスルーホールをパンチングで形成した。
2−1)スルーホール充填用導体ペースト(ビア導体形成用)
Cu粉体100質量部に対し、表3に示す樹脂バインダー2重量部、テルピネオールおよびブチルカルビトールアセテートの混合溶剤を4重量部、フタル酸エステル系の可塑剤(DOP,DBPの混合物)を2重量部添加し、これらを攪拌して混合した。その後、Cu粉体および樹脂バインダー類の凝集体がなくなるまで3本ロールミルで混合して導体ペーストを調製した。
Cu粉体100質量部に対し、表3に示す樹脂バインダー(ビア導体部と共通のものを使用)3重量部、テルピネオールおよびブチルカルビトールアセテートの混合溶剤を10重量部、フタル酸エステル系の可塑剤(DOP,DBPの混合物)を10重量部添加し、これらを攪拌して混合した。その後、Cu粉体および樹脂バインダー類の凝集体がなくなるまで3本ロールミルで混合して導体ペーストを調製した。
架橋イソブチルメタクリレートの樹脂ビーズ100重量部に対して、樹脂バインダーとしてイソブチルメタクリレート55重量部、DOP5重量部、ポリエチレングリコール5重量部、メチルイソブチルケトン150重量部を加えた組成物を混合してスラリーとした。
上記導体ペーストで配線パターンおよびスルーホールを形成したグリーンシート25、26に、アクリル樹脂、溶剤、フタル酸エステル系の可塑剤より成る接着剤を塗布して4.9×106Paの圧力で加圧し積層することにより、2枚のグリーンシートを一体化する際、最表層部のグリーンシート25の上に樹脂シート2を載置して、導体部を有するグリーンシート積層体を作製した。次いで、この積層体を、Al2O3系セッターに載置して窒素−水素−水蒸気の混合雰囲気焼成炉内にて、樹脂シート2の80%重量減少温度Ta℃付近である310℃で3時間保持して十分に樹脂シートの除去を行った後、セラミック充填層に含まれる樹脂バインダーの20%重量減少温度Tc℃および導体ペーストに含まれる樹脂バインダーの20%重量減少温度Tb℃を超える温度領域である850℃で3時間保持してさらに脱バインダーを行い、続けて950〜1000℃で焼成した。
実施例10〜18におけるグリーンシートの樹脂バインダー、導体ペーストの樹脂バインダーを表1に示すものを使用し、樹脂シートの樹脂バインダーとしてエチルセルロースを使用する以外は、実施例10〜18と同様にしてセラミック多層配線基板を作製した。なお、焼成は350℃で3時間保持して十分に樹脂シートの脱バインダー工程を行った後、850℃で3時間保持してさらに脱バインダーを行い、続けて950〜1000℃で行った。
樹脂シート2を載置しない以外は実施例10〜18と同様にしてセラミック多層配線基板を作製した。
セラミック充填層を形成しない以外は実施例10〜18と同様にしてセラミック多層配線基板を作製した。
2:樹脂シート
2a:樹脂シート
3:貫通孔
4:上金型
5:開口
6:下金型
7:凹部
8:配線導体層
9:ビア導体
A,A1,A2:セラミックグリーンシート
B1,B2,B3:セラミックグリーンシート
C:セラミックグリーンシート積層体
D:セラミック多層配線基板
E:セラミック充填層
20:貫通穴
21a,21b:セラミックグリーンシート
21c,21d,21e:セラミックグリーンシート
22:凹部
23:セラミック多層配線基板
24:層間剥離(デラミネーション)
25,26:セラミックグリーンシート
27:セラミック多層配線基板
Claims (5)
- 導体ペーストを用いて導体部を形成したセラミックグリーンシートを複数枚積層して一体化し焼成して成るセラミック多層配線基板を製造するに際して、前記セラミックグリーンシートの表面に導体部を形成するとともに該導体部が形成されていない部位に前記セラミックグリーンシートと同じセラミック成分を含んだセラミック充填層を形成する工程と、前記導体部および前記セラミック充填層が形成された前記セラミックグリーンシート上に樹脂シートを載置する工程と、該樹脂シートが載置された前記セラミックグリーンシートを複数枚積層して一体化する工程と、一体化した前記樹脂シートおよび前記セラミックグリーンシートを焼成中に前記樹脂シートを熱分解させて除去する工程とを含み、前記樹脂シートの80%重量減少温度をTa℃、前記導体ペーストに含まれる樹脂バインダーの20%重量減少温度をTb℃、前記セラミック充填層に含まれる樹脂バインダーの20%重量減少温度をTc℃としたときに、Ta≦TbかつTa≦Tcの関係を満たし、前記導体ペーストを印刷後に乾燥させたものの(損失弾性率)/(貯蔵弾性率)で表される損失正接tanδをtanδ b 、前記セラミック充填層を印刷後に乾燥させたもののtanδをtanδ c としたときに、tanδ b ≦tanδ c の関係を満たすことを特徴とするセラミック多層配線基板の製造方法。
- 前記樹脂シートは600℃において99重量%以上熱分解することを特徴とする請求項1記載のセラミック多層配線基板の製造方法。
- 前記樹脂シートは、樹脂ビーズと、樹脂バインダーと、可塑剤および滑剤の少なくとも一方とを含むことを特徴とする請求項1または請求項2記載のセラミック多層配線基板の製造方法。
- 焼成中に前記樹脂シートの80%重量減少温度Ta℃を所定時間維持して前記樹脂シートを熱分解させて除去する工程と、前記セラミック充填層に含まれる樹脂バインダーの20%重量減少温度Tc℃を超える温度を所定時間維持する工程とを含むことを特徴とする請求項1乃至請求項3のいずれかに記載のセラミック多層配線基板の製造方法。
- 焼成中に前記導体ペーストに含まれる樹脂バインダーの20%重量減少温度Tb℃を超える温度を所定時間維持する工程を含むことを特徴とする請求項1乃至請求項4のいずれかに記載のセラミック多層配線基板の製造方法。
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JPH02116196A (ja) * | 1988-10-25 | 1990-04-27 | Nec Corp | セラミック多層回路基板の製造方法 |
JPH0441256A (ja) * | 1990-06-06 | 1992-02-12 | Sekisui Chem Co Ltd | 空孔を有するセラミックス―金属複合体の製造方法 |
JP2001007524A (ja) * | 1999-06-23 | 2001-01-12 | Denso Corp | 配線基板の製造方法 |
JP2002299821A (ja) * | 2001-03-29 | 2002-10-11 | Kyocera Corp | 多層基板の製造方法 |
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JPH02116196A (ja) * | 1988-10-25 | 1990-04-27 | Nec Corp | セラミック多層回路基板の製造方法 |
JPH0441256A (ja) * | 1990-06-06 | 1992-02-12 | Sekisui Chem Co Ltd | 空孔を有するセラミックス―金属複合体の製造方法 |
JP2001007524A (ja) * | 1999-06-23 | 2001-01-12 | Denso Corp | 配線基板の製造方法 |
JP2002299821A (ja) * | 2001-03-29 | 2002-10-11 | Kyocera Corp | 多層基板の製造方法 |
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