JP4510494B2 - 露光装置 - Google Patents

露光装置 Download PDF

Info

Publication number
JP4510494B2
JP4510494B2 JP2004096429A JP2004096429A JP4510494B2 JP 4510494 B2 JP4510494 B2 JP 4510494B2 JP 2004096429 A JP2004096429 A JP 2004096429A JP 2004096429 A JP2004096429 A JP 2004096429A JP 4510494 B2 JP4510494 B2 JP 4510494B2
Authority
JP
Japan
Prior art keywords
lens
liquid
exposed
optical system
convex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004096429A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005286026A (ja
JP2005286026A5 (OSRAM
Inventor
雄平 住吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004096429A priority Critical patent/JP4510494B2/ja
Priority to US11/093,097 priority patent/US7215410B2/en
Publication of JP2005286026A publication Critical patent/JP2005286026A/ja
Priority to US11/687,386 priority patent/US7408620B2/en
Publication of JP2005286026A5 publication Critical patent/JP2005286026A5/ja
Application granted granted Critical
Publication of JP4510494B2 publication Critical patent/JP4510494B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004096429A 2004-03-29 2004-03-29 露光装置 Expired - Fee Related JP4510494B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004096429A JP4510494B2 (ja) 2004-03-29 2004-03-29 露光装置
US11/093,097 US7215410B2 (en) 2004-03-29 2005-03-28 Exposure apparatus
US11/687,386 US7408620B2 (en) 2004-03-29 2007-03-16 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004096429A JP4510494B2 (ja) 2004-03-29 2004-03-29 露光装置

Publications (3)

Publication Number Publication Date
JP2005286026A JP2005286026A (ja) 2005-10-13
JP2005286026A5 JP2005286026A5 (OSRAM) 2008-08-21
JP4510494B2 true JP4510494B2 (ja) 2010-07-21

Family

ID=34989411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004096429A Expired - Fee Related JP4510494B2 (ja) 2004-03-29 2004-03-29 露光装置

Country Status (2)

Country Link
US (2) US7215410B2 (OSRAM)
JP (1) JP4510494B2 (OSRAM)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20050085026A (ko) * 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
SG133590A1 (en) * 2003-08-26 2007-07-30 Nikon Corp Optical element and exposure device
EP2261740B1 (en) * 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
KR20180042456A (ko) * 2004-03-25 2018-04-25 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1954408B (zh) * 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
CN102736446B (zh) 2004-06-10 2014-09-17 尼康股份有限公司 曝光装置及元件制造方法
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080068567A1 (en) 2004-06-10 2008-03-20 Hiroyuki Nagasaka Exposure Apparatus, Exposure Method, and Method for Producing Device
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7256121B2 (en) * 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US7446850B2 (en) * 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) * 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) * 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) * 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US20060147821A1 (en) 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE602006012746D1 (de) * 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
KR20160135859A (ko) 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
CN102385260B (zh) 2005-02-10 2014-11-05 Asml荷兰有限公司 浸没液体、曝光装置及曝光方法
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) * 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) * 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7944628B2 (en) * 2005-03-09 2011-05-17 Carl Zeiss Smt Gmbh Optical element unit
US7330238B2 (en) * 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7411654B2 (en) * 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5239337B2 (ja) * 2005-04-28 2013-07-17 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) * 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20170089028A (ko) 2005-05-12 2017-08-02 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 디바이스 제조 방법
US7435528B2 (en) * 2005-06-09 2008-10-14 E.I. Du Pont De Nemours And Company Processes and devices using polycyclic fluoroalkanes in vacuum and deep ultraviolet applications
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054445B2 (en) * 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009009954A (ja) * 2005-10-18 2009-01-15 Nikon Corp 露光装置及び露光方法
US7656501B2 (en) * 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7804577B2 (en) * 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007152235A (ja) * 2005-12-05 2007-06-21 Nomura Micro Sci Co Ltd 液浸露光装置用超純水の製造方法及び装置
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045134B2 (en) * 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
JP5645406B2 (ja) * 2006-09-12 2014-12-24 カール・ツァイス・エスエムティー・ゲーエムベーハー 浸漬リソグラフィーのための疎水性被膜を有する光学的配置、ならびにそれを具える投影露光器機
DE102006050653A1 (de) * 2006-10-24 2008-04-30 Carl Zeiss Smt Ag Verfahren und Vorrichtung zum stoffschlüssigen Verbinden eines optischen Elementes mit einer Fassung
US8045135B2 (en) * 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7791709B2 (en) * 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US7969555B2 (en) * 2007-03-16 2011-06-28 Industry-Academic Cooperation Foundation, Yonsei University Lens structure, optical system having the same, and lithography method using the optical system
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9013672B2 (en) * 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
JP2009026977A (ja) * 2007-07-20 2009-02-05 Canon Inc 投影光学系及びそれを有する露光装置
US8421993B2 (en) * 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
EP2131241B1 (en) 2008-05-08 2019-07-31 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
EP2249205B1 (en) * 2008-05-08 2012-03-07 ASML Netherlands BV Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method
JP4922359B2 (ja) * 2008-07-25 2012-04-25 エーエスエムエル ネザーランズ ビー．ブイ． 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法
NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
JP6399037B2 (ja) * 2016-05-18 2018-10-03 横河電機株式会社 対物レンズユニット及び液浸顕微鏡

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
TWI249082B (en) * 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
JP2004205698A (ja) * 2002-12-24 2004-07-22 Nikon Corp 投影光学系、露光装置および露光方法
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography

Also Published As

Publication number Publication date
US7215410B2 (en) 2007-05-08
US20070153248A1 (en) 2007-07-05
US7408620B2 (en) 2008-08-05
JP2005286026A (ja) 2005-10-13
US20050213066A1 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
JP4510494B2 (ja) 露光装置
US9500959B2 (en) Exposure apparatus and device manufacturing method
US20070285640A1 (en) Exposure apparatus and method
JP2005286068A (ja) 露光装置及び方法
WO2006030908A1 (ja) 基板保持装置、露光装置、及びデバイス製造方法
WO2004053951A1 (ja) 露光方法及び露光装置並びにデバイス製造方法
JP2006120674A (ja) 露光装置及び方法、デバイス製造方法
US20060192930A1 (en) Exposure apparatus
CN101685269B (zh) 曝光装置及元件制造方法
JP2006216733A (ja) 露光装置、光学素子の製造方法及びデバイス製造方法
JP4701606B2 (ja) 露光方法及び露光装置、デバイス製造方法
JP2006237291A (ja) 露光装置
JP2007184336A (ja) 露光装置及びデバイス製造方法
JP2008218653A (ja) 露光装置及びデバイス製造方法
JP5055549B2 (ja) 液浸露光装置
JP2006060016A (ja) 流体給排装置及びそれを有する露光装置
JP2008218595A (ja) 露光装置
JP2006073906A (ja) 露光装置、露光システム及びデバイス製造方法
JP2005209769A (ja) 露光装置
JP2009094145A (ja) 露光装置、露光方法およびデバイス製造方法
JP2007115730A (ja) 露光装置
JP2009283485A (ja) 露光装置及びデバイス製造方法
JP2006319065A (ja) 露光装置
JP2007019392A (ja) 露光装置
JP4720293B2 (ja) 露光装置、及びデバイスの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070322

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080709

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091023

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100326

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100427

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100430

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130514

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140514

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees