JP4499279B2 - 改良形試料検査システム - Google Patents
改良形試料検査システム Download PDFInfo
- Publication number
- JP4499279B2 JP4499279B2 JP2000512065A JP2000512065A JP4499279B2 JP 4499279 B2 JP4499279 B2 JP 4499279B2 JP 2000512065 A JP2000512065 A JP 2000512065A JP 2000512065 A JP2000512065 A JP 2000512065A JP 4499279 B2 JP4499279 B2 JP 4499279B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- detector
- sample surface
- sample
- scattered radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007689 inspection Methods 0.000 title description 26
- 230000005855 radiation Effects 0.000 claims description 205
- 239000002245 particle Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 39
- 230000003287 optical effect Effects 0.000 claims description 27
- 230000005856 abnormality Effects 0.000 claims description 15
- 230000006335 response to radiation Effects 0.000 claims 4
- 239000004575 stone Substances 0.000 claims 2
- 238000005286 illumination Methods 0.000 description 104
- 235000012431 wafers Nutrition 0.000 description 39
- 238000001514 detection method Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
- G01N21/474—Details of optical heads therefor, e.g. using optical fibres
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0216—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using light concentrators or collectors or condensers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
- G01N2021/8825—Separate detection of dark field and bright field
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8845—Multiple wavelengths of illumination or detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8848—Polarisation of light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/065—Integrating spheres
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/933,771 | 1997-09-19 | ||
| US08/933,771 US6201601B1 (en) | 1997-09-19 | 1997-09-19 | Sample inspection system |
| PCT/US1998/019564 WO1999014575A1 (en) | 1997-09-19 | 1998-09-18 | Improved sample inspection system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001516874A JP2001516874A (ja) | 2001-10-02 |
| JP2001516874A5 JP2001516874A5 (enExample) | 2006-01-05 |
| JP4499279B2 true JP4499279B2 (ja) | 2010-07-07 |
Family
ID=25464477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000512065A Expired - Lifetime JP4499279B2 (ja) | 1997-09-19 | 1998-09-18 | 改良形試料検査システム |
Country Status (6)
| Country | Link |
|---|---|
| US (9) | US6201601B1 (enExample) |
| EP (3) | EP1023582B1 (enExample) |
| JP (1) | JP4499279B2 (enExample) |
| AU (1) | AU9400098A (enExample) |
| DE (3) | DE69819929T2 (enExample) |
| WO (1) | WO1999014575A1 (enExample) |
Families Citing this family (254)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271916B1 (en) * | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
| US6956644B2 (en) * | 1997-09-19 | 2005-10-18 | Kla-Tencor Technologies Corporation | Systems and methods for a wafer inspection system using multiple angles and multiple wavelength illumination |
| US20040057045A1 (en) * | 2000-12-21 | 2004-03-25 | Mehdi Vaez-Iravani | Sample inspection system |
| US6201601B1 (en) * | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| US6930765B2 (en) * | 2001-03-26 | 2005-08-16 | Kla-Tencor Technologies | Multiple spot size optical profilometer, ellipsometer, reflectometer and scatterometer |
| US6757056B1 (en) | 2001-03-26 | 2004-06-29 | Candela Instruments | Combined high speed optical profilometer and ellipsometer |
| US7123357B2 (en) | 1997-09-22 | 2006-10-17 | Candela Instruments | Method of detecting and classifying scratches and particles on thin film disks or wafers |
| US6031615A (en) | 1997-09-22 | 2000-02-29 | Candela Instruments | System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness |
| US6909500B2 (en) * | 2001-03-26 | 2005-06-21 | Candela Instruments | Method of detecting and classifying scratches, particles and pits on thin film disks or wafers |
| US6665078B1 (en) * | 1997-09-22 | 2003-12-16 | Candela Instruments | System and method for simultaneously measuring thin film layer thickness, reflectivity, roughness, surface profile and magnetic pattern in thin film magnetic disks and silicon wafers |
| US20020015146A1 (en) * | 1997-09-22 | 2002-02-07 | Meeks Steven W. | Combined high speed optical profilometer and ellipsometer |
| US6897957B2 (en) | 2001-03-26 | 2005-05-24 | Candela Instruments | Material independent optical profilometer |
| US20050134841A1 (en) * | 1998-09-18 | 2005-06-23 | Mehdi Vacz-Iravani | Sample inspection system |
| JP4110653B2 (ja) | 1999-01-13 | 2008-07-02 | 株式会社ニコン | 表面検査方法及び装置 |
| DE19903486C2 (de) * | 1999-01-29 | 2003-03-06 | Leica Microsystems | Verfahren und Vorrichtung zur optischen Untersuchung von strukturierten Oberflächen von Objekten |
| US6621570B1 (en) * | 1999-03-04 | 2003-09-16 | Inspex Incorporated | Method and apparatus for inspecting a patterned semiconductor wafer |
| DE19914696C2 (de) * | 1999-03-31 | 2002-11-28 | Fraunhofer Ges Forschung | Gerät zur schnellen Messung winkelabhängiger Beugungseffekte an feinstrukturierten Oberflächen |
| US6587193B1 (en) * | 1999-05-11 | 2003-07-01 | Applied Materials, Inc. | Inspection systems performing two-dimensional imaging with line light spot |
| US6774991B1 (en) * | 1999-05-27 | 2004-08-10 | Inspex Incorporated | Method and apparatus for inspecting a patterned semiconductor wafer |
| US7061601B2 (en) * | 1999-07-02 | 2006-06-13 | Kla-Tencor Technologies Corporation | System and method for double sided optical inspection of thin film disks or wafers |
| KR100829658B1 (ko) * | 1999-08-16 | 2008-05-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 가변 각도로 조사하는 웨이퍼 검사 시스템 |
| US6853446B1 (en) | 1999-08-16 | 2005-02-08 | Applied Materials, Inc. | Variable angle illumination wafer inspection system |
| US6950182B1 (en) * | 1999-10-18 | 2005-09-27 | J. A. Woollam Co. | Functional equivalent to spatial filter in ellipsometer and the like systems |
| JP4643785B2 (ja) * | 2000-02-24 | 2011-03-02 | 株式会社トプコン | 表面検査装置 |
| JP4409701B2 (ja) * | 2000-02-25 | 2010-02-03 | 株式会社トプコン | 表面検査装置 |
| US6590645B1 (en) * | 2000-05-04 | 2003-07-08 | Kla-Tencor Corporation | System and methods for classifying anomalies of sample surfaces |
| US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
| US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
| US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
| US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
| US6917433B2 (en) * | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process |
| US6673637B2 (en) * | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| US6782337B2 (en) * | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
| JP2002098645A (ja) * | 2000-09-26 | 2002-04-05 | Hitachi Electronics Eng Co Ltd | 基板の表面検査装置及び表面検査方法 |
| US6731384B2 (en) * | 2000-10-10 | 2004-05-04 | Hitachi, Ltd. | Apparatus for detecting foreign particle and defect and the same method |
| JP4230674B2 (ja) * | 2001-03-01 | 2009-02-25 | 株式会社日立製作所 | 欠陥検査装置およびその方法 |
| US6538730B2 (en) | 2001-04-06 | 2003-03-25 | Kla-Tencor Technologies Corporation | Defect detection system |
| WO2002082064A1 (en) * | 2001-04-06 | 2002-10-17 | Kla-Tencor Corporation | Improved defect detection system |
| US7362425B2 (en) * | 2001-05-18 | 2008-04-22 | Meeks Steven W | Wide spatial frequency topography and roughness measurement |
| US6713753B1 (en) * | 2001-07-03 | 2004-03-30 | Nanometrics Incorporated | Combination of normal and oblique incidence polarimetry for the characterization of gratings |
| US6922236B2 (en) * | 2001-07-10 | 2005-07-26 | Kla-Tencor Technologies Corp. | Systems and methods for simultaneous or sequential multi-perspective specimen defect inspection |
| US7046353B2 (en) * | 2001-12-04 | 2006-05-16 | Kabushiki Kaisha Topcon | Surface inspection system |
| US6704101B1 (en) * | 2002-01-16 | 2004-03-09 | Advanced Micro Devices, Inc. | Scatterometry based measurements of a moving substrate |
| US6781697B1 (en) * | 2002-01-16 | 2004-08-24 | Lockheed Martin Corporation | Portable system and method for determining one or more reflectance properties of a surface |
| JP2003247957A (ja) * | 2002-02-26 | 2003-09-05 | Matsushita Electric Ind Co Ltd | 表面異物検査装置 |
| US7061627B2 (en) * | 2002-03-13 | 2006-06-13 | Therma-Wave, Inc. | Optical scatterometry of asymmetric lines and structures |
| JP5512064B2 (ja) * | 2002-03-28 | 2014-06-04 | ケーエルエー−テンカー・コーポレーション | Uv適合性プログラム可能な空間フィルタ |
| US6686995B2 (en) | 2002-03-28 | 2004-02-03 | Kla-Tencor Technologies Corporation | Two-dimensional UV compatible programmable spatial filter |
| US6882437B2 (en) * | 2002-04-19 | 2005-04-19 | Kla-Tencor Technologies | Method of detecting the thickness of thin film disks or wafers |
| US20070258085A1 (en) * | 2006-05-02 | 2007-11-08 | Robbins Michael D | Substrate illumination and inspection system |
| US20040038264A1 (en) * | 2002-05-14 | 2004-02-26 | Souza Glauco R. | Fractal dimension analysis of nanoparticle aggregates using angle dependent light scattering for the detection and characterization of nucleic acids and proteins |
| US6861660B2 (en) * | 2002-07-29 | 2005-03-01 | Applied Materials, Inc. | Process and assembly for non-destructive surface inspection |
| US7116413B2 (en) * | 2002-09-13 | 2006-10-03 | Kla-Tencor Corporation | Inspection system for integrated applications |
| WO2004031754A1 (en) * | 2002-09-30 | 2004-04-15 | Applied Materials Israel, Ltd. | Dark field inspection system |
| US8336596B2 (en) * | 2002-11-22 | 2012-12-25 | The Boeing Company | Composite lamination using array of parallel material dispensing heads |
| US7137182B2 (en) * | 2002-11-22 | 2006-11-21 | The Boeing Company | Parallel configuration composite material fabricator |
| JP4183492B2 (ja) * | 2002-11-27 | 2008-11-19 | 株式会社日立製作所 | 欠陥検査装置および欠陥検査方法 |
| US7525659B2 (en) * | 2003-01-15 | 2009-04-28 | Negevtech Ltd. | System for detection of water defects |
| US7030978B2 (en) | 2003-04-25 | 2006-04-18 | Applied Materials, Israel, Ltd | System and method for inspection of a substrate that has a refractive index |
| AU2003290785A1 (en) * | 2003-02-11 | 2004-09-06 | Applied Materials Israel, Ltd. | System and method for inspection of a substrate that has a refractive index |
| US6872942B1 (en) * | 2003-04-01 | 2005-03-29 | Kla-Tencor Technologies Corporation | High-speed inspection of flat substrates with underlying visible topology |
| WO2004105087A2 (en) * | 2003-05-19 | 2004-12-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for enabling robust separation between signals of interest and noise |
| DE10323139A1 (de) | 2003-05-22 | 2004-12-23 | Leica Microsystems Jena Gmbh | Verfahren und Vorrichtung zum Hochauflösenden Fehlerfinden und Klassifizieren |
| US7068363B2 (en) * | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
| US7365834B2 (en) | 2003-06-24 | 2008-04-29 | Kla-Tencor Technologies Corporation | Optical system for detecting anomalies and/or features of surfaces |
| US7002675B2 (en) * | 2003-07-10 | 2006-02-21 | Synetics Solutions, Inc. | Method and apparatus for locating/sizing contaminants on a polished planar surface of a dielectric or semiconductor material |
| US7280200B2 (en) * | 2003-07-18 | 2007-10-09 | Ade Corporation | Detection of a wafer edge using collimated light |
| US7002677B2 (en) * | 2003-07-23 | 2006-02-21 | Kla-Tencor Technologies Corporation | Darkfield inspection system having a programmable light selection array |
| US7236625B2 (en) * | 2003-07-28 | 2007-06-26 | The Boeing Company | Systems and method for identifying foreign objects and debris (FOD) and defects during fabrication of a composite structure |
| JP5006040B2 (ja) * | 2003-09-04 | 2012-08-22 | ケーエルエー−テンカー コーポレイション | 異なる検査パラメータを使用する試験片の検査のための方法とシステム |
| EP1512964A3 (de) * | 2003-09-08 | 2005-03-23 | DaimlerChrysler AG | Verfahren und Vorrichtung zur Bestimmung des Fahrbahnzustandes mit Mikrowellen |
| US7130036B1 (en) | 2003-09-16 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of an entire wafer surface using multiple detection channels |
| US7227628B1 (en) | 2003-10-10 | 2007-06-05 | Kla-Tencor Technologies Corp. | Wafer inspection systems and methods for analyzing inspection data |
| US7224471B2 (en) * | 2003-10-28 | 2007-05-29 | Timbre Technologies, Inc. | Azimuthal scanning of a structure formed on a semiconductor wafer |
| JP2005156516A (ja) * | 2003-11-05 | 2005-06-16 | Hitachi Ltd | パターン欠陥検査方法及びその装置 |
| US7304310B1 (en) | 2003-11-21 | 2007-12-04 | Kla-Tencor Technologies Corp. | Methods and systems for inspecting a specimen using light scattered in different wavelength ranges |
| US7289656B2 (en) | 2003-12-02 | 2007-10-30 | The Boeing Company | Systems and methods for determining inconsistency characteristics of a composite structure |
| US8934702B2 (en) * | 2003-12-02 | 2015-01-13 | The Boeing Company | System and method for determining cumulative tow gap width |
| US7319229B2 (en) * | 2003-12-29 | 2008-01-15 | Kla-Tencor Technologies Corporation | Illumination apparatus and methods |
| US7355709B1 (en) | 2004-02-23 | 2008-04-08 | Kla-Tencor Technologies Corp. | Methods and systems for optical and non-optical measurements of a substrate |
| US7184138B1 (en) * | 2004-03-11 | 2007-02-27 | Kla Tencor Technologies Corporation | Spatial filter for sample inspection system |
| US7039485B2 (en) | 2004-03-12 | 2006-05-02 | The Boeing Company | Systems and methods enabling automated return to and/or repair of defects with a material placement machine |
| US7206066B2 (en) * | 2004-03-19 | 2007-04-17 | Kla-Tencor Technologies Corporation | Reflectance surface analyzer |
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1997
- 1997-09-19 US US08/933,771 patent/US6201601B1/en not_active Expired - Lifetime
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1998
- 1998-09-18 AU AU94000/98A patent/AU9400098A/en not_active Abandoned
- 1998-09-18 EP EP98947155A patent/EP1023582B1/en not_active Expired - Lifetime
- 1998-09-18 DE DE69819929T patent/DE69819929T2/de not_active Expired - Lifetime
- 1998-09-18 WO PCT/US1998/019564 patent/WO1999014575A1/en not_active Ceased
- 1998-09-18 DE DE69840532T patent/DE69840532D1/de not_active Expired - Lifetime
- 1998-09-18 DE DE69828827T patent/DE69828827T2/de not_active Expired - Lifetime
- 1998-09-18 JP JP2000512065A patent/JP4499279B2/ja not_active Expired - Lifetime
- 1998-09-18 EP EP02012062A patent/EP1265063B1/en not_active Expired - Lifetime
- 1998-09-18 US US10/070,079 patent/US6891611B1/en not_active Expired - Fee Related
- 1998-09-18 EP EP04024371A patent/EP1508799B1/en not_active Expired - Lifetime
-
2000
- 2000-12-21 US US09/745,492 patent/US6384910B2/en not_active Expired - Lifetime
- 2000-12-21 US US09/746,415 patent/US6657715B2/en not_active Expired - Lifetime
- 2000-12-21 US US09/746,141 patent/US6639662B2/en not_active Expired - Lifetime
-
2001
- 2001-12-27 US US10/033,069 patent/US6618134B2/en not_active Expired - Lifetime
-
2003
- 2003-05-13 US US10/437,829 patent/US7079238B2/en not_active Expired - Fee Related
- 2003-07-24 US US10/627,402 patent/US7064821B2/en not_active Expired - Fee Related
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2005
- 2005-05-10 US US11/126,467 patent/US20050206886A1/en not_active Abandoned
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| Publication number | Publication date |
|---|---|
| US20010002149A1 (en) | 2001-05-31 |
| US6201601B1 (en) | 2001-03-13 |
| US6384910B2 (en) | 2002-05-07 |
| WO1999014575B1 (en) | 1999-06-03 |
| EP1023582B1 (en) | 2003-11-19 |
| EP1508799B1 (en) | 2009-02-04 |
| US20030206295A1 (en) | 2003-11-06 |
| EP1023582A1 (en) | 2000-08-02 |
| EP1508799A3 (en) | 2005-05-18 |
| US20050174568A1 (en) | 2005-08-11 |
| US20010000679A1 (en) | 2001-05-03 |
| EP1265063B1 (en) | 2005-01-26 |
| DE69819929D1 (de) | 2003-12-24 |
| US20020080346A1 (en) | 2002-06-27 |
| US7064821B2 (en) | 2006-06-20 |
| DE69840532D1 (de) | 2009-03-19 |
| US20010000977A1 (en) | 2001-05-10 |
| DE69819929T2 (de) | 2004-11-11 |
| DE69828827T2 (de) | 2006-01-05 |
| EP1265063A1 (en) | 2002-12-11 |
| US6639662B2 (en) | 2003-10-28 |
| US7079238B2 (en) | 2006-07-18 |
| WO1999014575A1 (en) | 1999-03-25 |
| EP1508799A2 (en) | 2005-02-23 |
| US6891611B1 (en) | 2005-05-10 |
| DE69828827D1 (de) | 2005-03-03 |
| US6618134B2 (en) | 2003-09-09 |
| US20050206886A1 (en) | 2005-09-22 |
| AU9400098A (en) | 1999-04-05 |
| US6657715B2 (en) | 2003-12-02 |
| JP2001516874A (ja) | 2001-10-02 |
| EP1023582A4 (en) | 2000-11-29 |
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