SG10201510329VA - Wafer inspection - Google Patents

Wafer inspection

Info

Publication number
SG10201510329VA
SG10201510329VA SG10201510329VA SG10201510329VA SG10201510329VA SG 10201510329V A SG10201510329V A SG 10201510329VA SG 10201510329V A SG10201510329V A SG 10201510329VA SG 10201510329V A SG10201510329V A SG 10201510329VA SG 10201510329V A SG10201510329V A SG 10201510329VA
Authority
SG
Singapore
Prior art keywords
wafer inspection
wafer
inspection
Prior art date
Application number
SG10201510329VA
Inventor
Guoheng Zhao
Jenn-Kuen Leong
Mehdi Vaez-Iravani
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG10201510329VA publication Critical patent/SG10201510329VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/061Sources
    • G01N2201/06113Coherent sources; lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG10201510329VA 2010-12-16 2011-12-07 Wafer inspection SG10201510329VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42403910P 2010-12-16 2010-12-16

Publications (1)

Publication Number Publication Date
SG10201510329VA true SG10201510329VA (en) 2016-01-28

Family

ID=46245285

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201510329VA SG10201510329VA (en) 2010-12-16 2011-12-07 Wafer inspection
SG2013023924A SG190678A1 (en) 2010-12-16 2011-12-07 Wafer inspection

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013023924A SG190678A1 (en) 2010-12-16 2011-12-07 Wafer inspection

Country Status (6)

Country Link
US (2) US8891079B2 (en)
EP (1) EP2652776B1 (en)
JP (1) JP6010042B2 (en)
KR (1) KR101908749B1 (en)
SG (2) SG10201510329VA (en)
WO (1) WO2012082501A2 (en)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793673B2 (en) 2011-06-13 2017-10-17 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US9279774B2 (en) 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US8912495B2 (en) * 2012-11-21 2014-12-16 Kla-Tencor Corp. Multi-spectral defect inspection for 3D wafers
US9151940B2 (en) 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9608399B2 (en) 2013-03-18 2017-03-28 Kla-Tencor Corporation 193 nm laser and an inspection system using a 193 nm laser
US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9726617B2 (en) * 2013-06-04 2017-08-08 Kla-Tencor Corporation Apparatus and methods for finding a best aperture and mode to enhance defect detection
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
US9354177B2 (en) 2013-06-26 2016-05-31 Kla-Tencor Corporation System and method for defect detection and photoluminescence measurement of a sample
US9503660B2 (en) * 2013-11-26 2016-11-22 Raytheon Company Coordinated simultaneous real and Fourier plane imaging system and methods
US9546962B2 (en) 2014-02-12 2017-01-17 Kla-Tencor Corporation Multi-spot scanning collection optics
US9410901B2 (en) 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
US9804101B2 (en) 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
US9506873B2 (en) 2014-04-15 2016-11-29 Kla-Tencor Corp. Pattern suppression in logic for wafer inspection
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
US9748729B2 (en) 2014-10-03 2017-08-29 Kla-Tencor Corporation 183NM laser and inspection system
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
US10462391B2 (en) 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
US9874526B2 (en) * 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection
DE102016109803B3 (en) * 2016-05-27 2017-07-06 Eyec Gmbh Inspection device and inspection method for inspecting the surface image of a flat object representing a test object
KR102167462B1 (en) * 2016-05-30 2020-10-20 봅스트 맥스 에스에이 Quality control station for seat element processing machine and lighting unit for quality control station
US10739275B2 (en) * 2016-09-15 2020-08-11 Kla-Tencor Corporation Simultaneous multi-directional laser wafer inspection
US10175555B2 (en) 2017-01-03 2019-01-08 KLA—Tencor Corporation 183 nm CW laser and inspection system
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
US10147178B2 (en) * 2017-01-12 2018-12-04 Nanya Technology Corporation Method of recognizing wafer
SG11201908988TA (en) * 2017-03-29 2019-10-30 Agency Science Tech & Res Reconfigurable laser stimulated lock-in thermography for micro-crack detection
US10168273B1 (en) * 2017-07-01 2019-01-01 Kla-Tencor Corporation Methods and apparatus for polarizing reticle inspection
US10739276B2 (en) * 2017-11-03 2020-08-11 Kla-Tencor Corporation Minimizing filed size to reduce unwanted stray light
HUE060656T2 (en) 2018-02-07 2023-04-28 Kwang Steel Co Ltd Building exterior panel and assembly structure thereof
US10268854B1 (en) * 2018-04-13 2019-04-23 Zebra Technologies Corporation Illumination assemblies for use in barcode readers and devices and methods associated therewith
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
US10295476B1 (en) 2018-08-14 2019-05-21 Applied Materials Israel Ltd. System and method for multiple mode inspection of a sample
US10943760B2 (en) 2018-10-12 2021-03-09 Kla Corporation Electron gun and electron microscope
US10942135B2 (en) 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
US10522426B1 (en) 2019-02-08 2019-12-31 Kla-Tencor Corporation Haze mask system for haze suppression
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
US11105740B2 (en) 2019-10-22 2021-08-31 Applied Materials Israel Ltd. Optical inspection
JP7176508B2 (en) * 2019-12-26 2022-11-22 株式会社Sumco Silicon wafer defect inspection method and silicon wafer defect inspection system
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer
US11474437B2 (en) * 2020-04-28 2022-10-18 Applied Materials Israel Ltd. Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11525777B2 (en) 2020-04-28 2022-12-13 Applied Materials Israel Ltd. Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11879853B2 (en) 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
US20230341334A1 (en) * 2022-04-26 2023-10-26 Applied Materials Israel Ltd. High throughput defect detection

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4854705A (en) * 1988-04-05 1989-08-08 Aerometrics, Inc. Method and apparatus to determine the size and velocity of particles using light scatter detection from confocal beams
JP3373327B2 (en) * 1995-04-24 2003-02-04 松下電器産業株式会社 Foreign matter inspection device
US6064517A (en) * 1996-07-22 2000-05-16 Kla-Tencor Corporation High NA system for multiple mode imaging
US6034776A (en) 1997-04-16 2000-03-07 The United States Of America As Represented By The Secretary Of Commerce Microroughness-blind optical scattering instrument
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
US6366690B1 (en) * 1998-07-07 2002-04-02 Applied Materials, Inc. Pixel based machine for patterned wafers
US7136159B2 (en) * 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Excimer laser inspection system
US6538730B2 (en) 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
US6603541B2 (en) * 2001-06-28 2003-08-05 Kla-Tencor Technologies Corporation Wafer inspection using optimized geometry
US6686602B2 (en) * 2002-01-15 2004-02-03 Applied Materials, Inc. Patterned wafer inspection using spatial filtering
US7130039B2 (en) * 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
JP2006501469A (en) 2002-09-30 2006-01-12 アプライド マテリアルズ イスラエル リミテッド Inspection system with oblique view angle
US7286697B2 (en) 2002-10-18 2007-10-23 Applied Materials, Israel, Ltd. System for imaging an extended area
US7525659B2 (en) 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
US7957066B2 (en) * 2003-02-21 2011-06-07 Kla-Tencor Corporation Split field inspection system using small catadioptric objectives
US7068363B2 (en) 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
WO2006066205A2 (en) 2004-12-19 2006-06-22 Ade Corporation System and method for inspection of a workpiece surface using multiple scattered light collectors
US7489393B2 (en) * 2005-03-02 2009-02-10 Kla-Tencor Technologies Corporation Enhanced simultaneous multi-spot inspection and imaging
US7728965B2 (en) 2005-06-06 2010-06-01 Kla-Tencor Technologies Corp. Systems and methods for inspecting an edge of a specimen
US7385688B1 (en) 2005-06-22 2008-06-10 Kla-Tencor Technologies Corp. Multi-spot illumination and collection optics for highly tilted wafer planes
US20070229833A1 (en) 2006-02-22 2007-10-04 Allan Rosencwaig High-sensitivity surface detection system and method
US7724362B1 (en) * 2006-03-14 2010-05-25 Kla-Tencor Corporation Oblique incidence macro wafer inspection
US7436505B2 (en) * 2006-04-04 2008-10-14 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
JP5349742B2 (en) 2006-07-07 2013-11-20 株式会社日立ハイテクノロジーズ Surface inspection method and surface inspection apparatus
US7664608B2 (en) 2006-07-14 2010-02-16 Hitachi High-Technologies Corporation Defect inspection method and apparatus
JP4876019B2 (en) * 2007-04-25 2012-02-15 株式会社日立ハイテクノロジーズ Defect inspection apparatus and method
JP5132982B2 (en) 2007-05-02 2013-01-30 株式会社日立ハイテクノロジーズ Pattern defect inspection apparatus and method
US7746459B2 (en) 2007-08-10 2010-06-29 Kla-Tencor Technologies Corp. Systems configured to inspect a wafer
JP2009053132A (en) * 2007-08-29 2009-03-12 Hitachi High-Technologies Corp Defect inspection method and defect inspection device
JP4797005B2 (en) 2007-09-11 2011-10-19 株式会社日立ハイテクノロジーズ Surface inspection method and surface inspection apparatus
US7826049B2 (en) 2008-02-11 2010-11-02 Applied Materials South East Asia Pte. Ltd. Inspection tools supporting multiple operating states for multiple detector arrangements
JP5319930B2 (en) * 2008-02-20 2013-10-16 株式会社日立ハイテクノロジーズ Defect inspection apparatus and defect inspection method
JP4703671B2 (en) * 2008-02-27 2011-06-15 株式会社日立ハイテクノロジーズ Surface inspection method and inspection apparatus using the same
US8194301B2 (en) 2008-03-04 2012-06-05 Kla-Tencor Corporation Multi-spot scanning system and method
JP5624714B2 (en) * 2008-05-23 2014-11-12 株式会社日立ハイテクノロジーズ Inspection method and inspection apparatus for substrate surface
US7843558B2 (en) 2008-06-25 2010-11-30 Applied Materials South East Asia Pte. Ltd. Optical inspection tools featuring light shaping diffusers
JP2010025713A (en) * 2008-07-18 2010-02-04 Hitachi High-Technologies Corp Flaw inspection method and flaw inspection device
US8169613B1 (en) 2008-11-21 2012-05-01 Kla-Tencor Corp. Segmented polarizer for optimizing performance of a surface inspection system
US8605275B2 (en) 2009-01-26 2013-12-10 Kla-Tencor Corp. Detecting defects on a wafer
US8223327B2 (en) 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
TW201100787A (en) * 2009-02-18 2011-01-01 Nikon Corp Surface examining device and surface examining method
JP2010197352A (en) * 2009-02-27 2010-09-09 Hitachi High-Technologies Corp Defect inspection method and defect inspecting apparatus
US9279774B2 (en) 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection

Also Published As

Publication number Publication date
WO2012082501A2 (en) 2012-06-21
KR101908749B1 (en) 2018-10-16
SG190678A1 (en) 2013-07-31
US9291575B2 (en) 2016-03-22
JP6010042B2 (en) 2016-10-19
JP2014504370A (en) 2014-02-20
EP2652776B1 (en) 2019-08-07
KR20130129416A (en) 2013-11-28
WO2012082501A3 (en) 2012-08-16
EP2652776A4 (en) 2018-01-17
US8891079B2 (en) 2014-11-18
EP2652776A2 (en) 2013-10-23
US20140009759A1 (en) 2014-01-09
US20150103348A1 (en) 2015-04-16

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