JP5006040B2 - 異なる検査パラメータを使用する試験片の検査のための方法とシステム - Google Patents
異なる検査パラメータを使用する試験片の検査のための方法とシステム Download PDFInfo
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- JP5006040B2 JP5006040B2 JP2006525531A JP2006525531A JP5006040B2 JP 5006040 B2 JP5006040 B2 JP 5006040B2 JP 2006525531 A JP2006525531 A JP 2006525531A JP 2006525531 A JP2006525531 A JP 2006525531A JP 5006040 B2 JP5006040 B2 JP 5006040B2
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- 238000007689 inspection Methods 0.000 title claims description 203
- 238000000034 method Methods 0.000 title claims description 141
- 230000003287 optical effect Effects 0.000 claims description 216
- 238000005286 illumination Methods 0.000 claims description 179
- 230000007547 defect Effects 0.000 claims description 173
- 238000012360 testing method Methods 0.000 claims description 55
- 230000007704 transition Effects 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 36
- 238000012545 processing Methods 0.000 claims description 23
- 230000035945 sensitivity Effects 0.000 claims description 16
- 238000001914 filtration Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 107
- 238000001514 detection method Methods 0.000 description 93
- 235000012431 wafers Nutrition 0.000 description 27
- 239000010409 thin film Substances 0.000 description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 239000010410 layer Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 14
- 230000010287 polarization Effects 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 11
- 238000007493 shaping process Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000013459 approach Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 210000001747 pupil Anatomy 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000006399 behavior Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 230000004075 alteration Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 235000006719 Cassia obtusifolia Nutrition 0.000 description 1
- 235000014552 Cassia tora Nutrition 0.000 description 1
- 244000201986 Cassia tora Species 0.000 description 1
- 206010036618 Premenstrual syndrome Diseases 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229940049595 antibody-drug conjugate Drugs 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
Description
Claims (13)
- 第1のサブシステムを使用し、350nmより下の少なくとも1つの波長を有する光を用いて、かつ第2のサブシステムを使用し、350nmより上の少なくとも1つの波長を有する光を用いて試験片を照明すること、
前記試験片から光を収集すること、
前記収集した光を検出し、前記収集した光の第1の部分を表す光学位相信号と、前記収集した光の第2の部分を表す明視野光学信号を生成すること、
前記光学位相信号と前記明視野光学信号を別々に処理して、前記試験片上の欠陥または工程の変動を検出すること、
よりなる試験片を検査するための方法であって、
前記350nmより下の少なくとも1つの波長を有する光は、試験片の不透明度遷移波長より短い波長帯域である不透明レジームにおける波長から選択された第1の最適検査波長帯の光を含み、
前記350nmより上の少なくとも1つの波長を有する光は、試験片の不透明度遷移波長より長い波長帯域である透明レジームにおける波長から選択された第2の最適検査波長帯の光を含み、
前記第2の最適検査波長帯の光は、1を超える数のタイプの欠陥を捕捉することができる所定の波長帯域幅を有する光を含み、
前記収集した光の第1の部分は、前記350nmより上の少なくとも1つの波長を有する光を用いて前記試験片を照明した結果得られるものであり、
前記収集した光の第2の部分は、前記350nmより下の少なくとも1つの波長を有する光を用いて前記試験片を照明した結果得られるものであり、
前記第2のサブシステムの少なくとも1つの波長が前記試験片の材料についての信号内のコントラストを増加するように選択され、かつ前記第1のサブシステムの少なくとも1つの波長が前記欠陥に対する感度を増加するように選択されること、
を特徴とする試験片を検査するための方法。 - 前記収集した光が前記試験片の少なくとも一部の明視野イメージを含む請求項1に記載の方法。
- 前記第1のサブシステムがレーザを含む請求項1に記載の方法。
- 前記第2のサブシステムが多色光源を含む請求項1に記載の方法。
- 前記第2のサブシステムがアーク・ランプを含む請求項1に記載の方法。
- 前記第2のサブシステムがレーザを含む請求項1に記載の方法。
- 前記第1と第2のサブシステムが共通のレーザを含む請求項1に記載の方法。
- 前記第1のサブシステムが第1のレーザを包含し、前記第2のサブシステムが第2のレーザを含む請求項1に記載の方法。
- 前記第1と第2のサブシステムが共通の多色光源を含む請求項1に記載の方法。
- 前記第1のサブシステムが第1の多色光源を包含し、前記第2のサブシステムが第2の多色光源を含む請求項1に記載の方法。
- 前記第1のサブシステムが暗視野照明源を包含し、前記処理が、前記第1のサブシステムを使用する前記照明から結果としてもたらされる前記収集した光に対応する信号のフーリエ・フィルタリングを行うことを含む請求項1に記載の方法。
- 前記照明が、前記第1と第2のサブシステムを実質的に同時に使用する前記試験片の照明を含む請求項1に記載の方法。
- 前記照明が、前記第1と第2のサブシステムを異なる時点で使用する前記試験片の照明を含む請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US50017403P | 2003-09-04 | 2003-09-04 | |
US60/500,174 | 2003-09-04 | ||
US10/933,873 US7738089B2 (en) | 2003-09-04 | 2004-09-03 | Methods and systems for inspection of a specimen using different inspection parameters |
PCT/US2004/029189 WO2005024404A1 (en) | 2003-09-04 | 2004-09-03 | Methods and systems for inspection of a specimen using different inspection parameters |
US10/933,873 | 2004-09-03 |
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JP2011132931A Division JP5529806B2 (ja) | 2003-09-04 | 2011-06-15 | 異なる検査パラメータを使用する試験片の検査のための方法とシステム |
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JP2007511739A JP2007511739A (ja) | 2007-05-10 |
JP2007511739A5 JP2007511739A5 (ja) | 2007-12-06 |
JP5006040B2 true JP5006040B2 (ja) | 2012-08-22 |
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JP2011132931A Active JP5529806B2 (ja) | 2003-09-04 | 2011-06-15 | 異なる検査パラメータを使用する試験片の検査のための方法とシステム |
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US (2) | US7738089B2 (ja) |
EP (2) | EP1697729B1 (ja) |
JP (2) | JP5006040B2 (ja) |
WO (1) | WO2005024404A1 (ja) |
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JP2011257405A (ja) | 2011-12-22 |
EP2256487A2 (en) | 2010-12-01 |
US20050052643A1 (en) | 2005-03-10 |
WO2005024404A1 (en) | 2005-03-17 |
US8384887B2 (en) | 2013-02-26 |
US7738089B2 (en) | 2010-06-15 |
WO2005024404B1 (en) | 2005-05-19 |
JP5529806B2 (ja) | 2014-06-25 |
EP1697729A1 (en) | 2006-09-06 |
EP1697729B1 (en) | 2010-11-10 |
EP2256487A3 (en) | 2017-03-15 |
JP2007511739A (ja) | 2007-05-10 |
US20100238433A1 (en) | 2010-09-23 |
EP2256487B1 (en) | 2019-11-06 |
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