JP4497162B2 - 誘電体セラミック及び積層セラミックコンデンサ - Google Patents
誘電体セラミック及び積層セラミックコンデンサ Download PDFInfo
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- JP4497162B2 JP4497162B2 JP2006528391A JP2006528391A JP4497162B2 JP 4497162 B2 JP4497162 B2 JP 4497162B2 JP 2006528391 A JP2006528391 A JP 2006528391A JP 2006528391 A JP2006528391 A JP 2006528391A JP 4497162 B2 JP4497162 B2 JP 4497162B2
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- 239000000919 ceramic Substances 0.000 title claims description 110
- 239000003985 ceramic capacitor Substances 0.000 title claims description 48
- 239000000203 mixture Substances 0.000 claims description 42
- 239000002245 particle Substances 0.000 claims description 28
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 8
- -1 2CeO 2 Inorganic materials 0.000 claims description 7
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 description 34
- 238000010304 firing Methods 0.000 description 19
- 238000009413 insulation Methods 0.000 description 15
- 239000002994 raw material Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910052788 barium Inorganic materials 0.000 description 8
- 238000006467 substitution reaction Methods 0.000 description 8
- 229910001422 barium ion Inorganic materials 0.000 description 6
- 229910001424 calcium ion Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Description
2 誘電体セラミック層
3A、3B 第1、第2内部電極
4 積層体
4A、4B 第1、第2外部電極
5A、5B 第1、第2外部電極
本実施例では、まず誘電体セラミック(1)の原料粉末を調製した後、この原料粉末を用いて積層セラミックコンデンサを作製した。それにはまず、出発原料として、高純度のTiO2、BaCO3及びCaCO3の各粉末を準備し、これらの出発原料を、Ti、Ba、Caが表1の試料A〜Nに示す含有量となるように秤量した後、これらを湿式混合し、粉砕し、乾燥させることによって配合粉末を得た。この配合粉末を950℃以上の温度で2時間加熱し、表1に試料A〜Nで示す組成及び平均粒径Raを有する(Ba、Ca)TiO3粉末を合成し、平均粒径が0.1〜0.2μmの原料粉末として準備した。また、他の原料粉末として、MgO粉末、CuO粉末、MnCO3粉末、SiO2粉末及びRO粉末(但しROはY2O3、La2O3、2CeO2、Nd2O3、Sm2O3、Eu2O3、Gd2O3、Tb2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3から選択される少なくとも一種の希土類元素酸化物)を準備した。尚、表1において、*印を付した試料A〜Dは、x、mが本発明の範囲外のものである。
静電容量C及び誘電損失tanδは、自動ブリッジ式測定器を用いてJIS規格5102に従って測定した後、得られた静電容量Cから比誘電率εrを算出し、その結果を表4及び表5に示した。
本参考例では、まず誘電体セラミック(2)の原料粉末を調製した後、この原料粉末を用いて積層セラミックコンデンサを作製した。それにはまず、出発原料として、高純度のTiO2、BaCO3及びCaCO3の各粉末を準備し、これら出発原料を、Ti、Ba、Caが表6の試料A’〜K’に示す含有量となるように秤量した後、これらを湿式混合し、粉砕、乾燥することによって配合粉末を得た。この配合粉末を950℃以上の温度で2時間加熱し、表6に試料A’〜K’で示す組成のBaTiO3または(Ba、Ca)TiO3粉末を合成し、平均粒径が0.1〜0.2μmの原料粉末として準備した。また、他の原料粉末としてMgO粉末、CuO粉末、MnCO3粉末、SiO2粉末及びRO粉末(但しROは、Y2O3、La2O3、2CeO2、Nd2O3、Sm2O3、Eu2O3、Gd2O3、Tb2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3から選択される少なくとも一種の希土類元素酸化物)を準備した。尚、表6において、*印を付した試料A’、B’、C’は、x、mが誘電体セラミック(2)の組成の範囲外のものである。
Claims (3)
- 組成式が100(Ba1−xCax)mTiO3+aMnO+bCuO+cSiO2+dMgO+eRO(但し、係数100、a、b、c、d、eはそれぞれモル比を表し、mは(Ba1−xCax)のTiに対するモル比を表し、ROはY2O3、La2O3、2CeO2、Nd2O3、Sm2O3、Eu2O3、Gd2O3、Tb2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3から選択される少なくとも一種の希土類元素酸化物)で表される誘電体セラミックであって、上記組成式のm、x、a、b、c、d及びeは、それぞれ、0.998≦m≦1.030、0.04≦x≦0.15、0.01≦a≦5、0.05≦b≦5、0.2≦c≦8、0.05≦d≦3.0、0.05≦e≦2.5の関係を満足し、且つ平均粒径が0.3μm以上、0.7μm以下であることを特徴とする誘電体セラミック。
- 積層された複数の誘電体セラミック層と、これらの誘電体セラミック層間に配置された内部電極と、これらの内部電極に電気的に接続された外部電極とを備え、上記誘電体セラミック層は、請求項1に記載の誘電体セラミックによって形成されてなることを特徴とする積層セラミックコンデンサ。
- 上記内部電極は、ニッケル、ニッケル合金、銅、及び銅合金から選択される少なくとも一種類の導電性材料によって形成されてなることを特徴とする請求項2に記載の積層セラミックコンデンサ。
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US7541306B2 (en) * | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
JP5094283B2 (ja) * | 2007-08-29 | 2012-12-12 | 京セラ株式会社 | 誘電体磁器および積層セラミックコンデンサ |
JP5409443B2 (ja) * | 2010-03-03 | 2014-02-05 | 株式会社村田製作所 | 積層セラミックコンデンサ |
US9679698B2 (en) | 2012-03-30 | 2017-06-13 | Taiyo Yuden Co., Ltd. | Multi-layer ceramic capacitor and method of manufacturing the same |
WO2013145423A1 (ja) * | 2012-03-30 | 2013-10-03 | 太陽誘電株式会社 | 積層セラミックコンデンサ及びその製造方法 |
CN104205267B (zh) | 2012-03-30 | 2017-05-31 | 太阳诱电株式会社 | 层叠陶瓷电容器 |
WO2014097678A1 (ja) * | 2012-12-21 | 2014-06-26 | 株式会社村田製作所 | 積層セラミックコンデンサおよびその製造方法 |
JP5462962B1 (ja) | 2013-01-31 | 2014-04-02 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6281502B2 (ja) | 2014-06-12 | 2018-02-21 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP7441120B2 (ja) * | 2020-06-05 | 2024-02-29 | 太陽誘電株式会社 | 積層セラミックコンデンサおよび誘電体材料 |
CN112110723B (zh) * | 2020-09-22 | 2022-06-03 | 中国人民解放军国防科技大学 | 一种满足x9r型mlcc应用需求的介质材料及其制备方法 |
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