JP4493897B2 - 熱処理装置及び熱処理方法 - Google Patents

熱処理装置及び熱処理方法 Download PDF

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Publication number
JP4493897B2
JP4493897B2 JP2002162143A JP2002162143A JP4493897B2 JP 4493897 B2 JP4493897 B2 JP 4493897B2 JP 2002162143 A JP2002162143 A JP 2002162143A JP 2002162143 A JP2002162143 A JP 2002162143A JP 4493897 B2 JP4493897 B2 JP 4493897B2
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gas
substrate
heat treatment
chamber
processing chamber
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JP2002162143A
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Japanese (ja)
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JP2003051505A (ja
JP2003051505A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2002162143A 2001-06-01 2002-06-03 熱処理装置及び熱処理方法 Expired - Fee Related JP4493897B2 (ja)

Priority Applications (1)

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JP2002162143A JP4493897B2 (ja) 2001-06-01 2002-06-03 熱処理装置及び熱処理方法

Applications Claiming Priority (3)

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JP2001-167422 2001-06-01
JP2001167422 2001-06-01
JP2002162143A JP4493897B2 (ja) 2001-06-01 2002-06-03 熱処理装置及び熱処理方法

Related Child Applications (1)

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JP2005161328A Division JP4498982B2 (ja) 2001-06-01 2005-06-01 半導体装置の作製方法

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JP2003051505A JP2003051505A (ja) 2003-02-21
JP2003051505A5 JP2003051505A5 (enExample) 2005-10-13
JP4493897B2 true JP4493897B2 (ja) 2010-06-30

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4796056B2 (ja) * 2004-05-12 2011-10-19 ヴァイアトロン・テクノロジーズ・インコーポレーテッド 半導体素子の熱処理システム
WO2005109486A1 (en) 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
KR100840015B1 (ko) * 2007-01-31 2008-06-20 주식회사 테라세미콘 비정질 실리콘 결정화를 위한 열처리 시스템
WO2011139126A2 (ko) * 2010-05-07 2011-11-10 나노세미콘(주) 웨이퍼 처리 장치와 그 방법
JP5943341B2 (ja) * 2012-02-29 2016-07-05 国立大学法人大阪大学 単結晶状ＧｅＳｎ含有材料の製造方法
JP5756897B2 (ja) * 2012-09-18 2015-07-29 パナソニックＩｐマネジメント株式会社 熱処理装置
JP6010182B2 (ja) * 2015-05-20 2016-10-19 光洋サーモシステム株式会社 連続拡散処理装置
JP6841920B2 (ja) * 2017-09-01 2021-03-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6346380A (ja) * 1986-08-12 1988-02-27 石川島播磨重工業株式会社 複式ガス雰囲気熱処理炉設備の操業方法
JPS63197343A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd 熱処理装置
JPH0376227A (ja) * 1989-08-18 1991-04-02 Nec Corp 熱処理装置
JPH03102818A (ja) * 1989-09-14 1991-04-30 Nec Corp 化合物半導体アニール装置
JPH0444314A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 半導体基板処理装置
JPH04337628A (ja) * 1991-05-14 1992-11-25 Kawasaki Steel Corp 半導体熱処理装置
JPH05206044A (ja) * 1992-01-27 1993-08-13 Dainippon Screen Mfg Co Ltd 基板用熱処理装置
JPH05299364A (ja) * 1992-02-20 1993-11-12 Tokyo Electron Ltd トラップ装置
JPH06151414A (ja) * 1992-11-02 1994-05-31 Nippon Telegr & Teleph Corp <Ntt> ガス加熱装置
JPH10229078A (ja) * 1997-02-18 1998-08-25 Mitsubishi Electric Corp 半導体装置及びこれの製造装置
JPH11204535A (ja) * 1998-01-16 1999-07-30 Matsushita Electric Ind Co Ltd 半導体基板の熱処理方法及び装置
JP2000133606A (ja) * 1998-10-22 2000-05-12 Ftl:Kk 半導体装置の製造方法
US6059567A (en) * 1998-02-10 2000-05-09 Silicon Valley Group, Inc. Semiconductor thermal processor with recirculating heater exhaust cooling system
JPH11260728A (ja) * 1998-03-11 1999-09-24 Seiko Epson Corp 薄膜形成装置

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