JP4491380B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4491380B2 JP4491380B2 JP2005169340A JP2005169340A JP4491380B2 JP 4491380 B2 JP4491380 B2 JP 4491380B2 JP 2005169340 A JP2005169340 A JP 2005169340A JP 2005169340 A JP2005169340 A JP 2005169340A JP 4491380 B2 JP4491380 B2 JP 4491380B2
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Description
本発明の目的は、信頼性の高い半導体装置及びその製造方法を提供することにある。
前記共晶合金の一部が、前記配線と前記ベース基板との間に入り込むように、前記共晶合金を形成する。本発明によると、配線基板(ベース基板)上の狭い領域内に共晶合金を形成することができる。そのため、共晶合金によって、隣り合う2つの配線の絶縁抵抗が低下することを防止することができる。すなわち、この半導体装置の製造方法によると、電気的な信頼性の高い半導体装置を製造することができる。
(2)この半導体装置の製造方法において、
前記配線基板に前記半導体チップを搭載する工程で、前記配線の一部を前記ベース基板から剥離させて剥離部を形成し、
前記共晶合金を、前記剥離部と前記ベース基板との間に入り込むように形成してもよい。
(3)この半導体装置の製造方法において、
前記共晶合金を、前記配線と前記ベース基板との間における前記電極とオーバーラップする領域を避けて形成してもよい。
(4)本発明に係る半導体装置は、ベース基板と前記ベース基板上に形成された配線とを有する配線基板と、
電極を有し、前記電極が前記配線と対向するように前記配線基板に搭載された半導体チップと、
前記電極に接触するように形成された共晶合金と、
を含み、
前記共晶合金は、一部が、前記配線と前記ベース基板との間に配置されてなる。これによると、配線におけるベース基板と対向する面を、共晶合金と接触させることができる。そのため、共晶合金と配線との接触面積を広くすることができる。そして、共晶合金は、電極と接触するように形成されてなる。そのため、本発明によると、配線と電極とを、安定して電気的に接続させることができる。すなわち、本発明によると、電気的な接続信頼性の高い半導体装置を提供することができる。
(5)この半導体装置において、
前記共晶合金は、前記配線と前記ベース基板との間における前記電極とオーバーラップする領域を避けて形成されていてもよい。
Claims (1)
- 変形可能なベース基板と前記ベース基板上に形成された配線とを有する配線基板に、電極を有する半導体チップを搭載し、前記配線と前記電極とを接触させ、加熱及び加圧して、共晶合金を形成することを含み、
前記配線基板に前記半導体チップを搭載する工程中において、前記電極を前記配線基板に押し付けて、前記ベース基板を変形させることによって、前記配線の一部を前記ベース基板から剥離させて剥離部を形成し、
前記電極を前記配線基板に押し付けた状態で、前記共晶合金の一部が、前記剥離部と前記ベース基板との間に入り込むように、前記共晶合金を形成する半導体装置の製造方法。
Priority Applications (6)
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JP2005169340A JP4491380B2 (ja) | 2005-06-09 | 2005-06-09 | 半導体装置の製造方法 |
KR1020060048602A KR100749592B1 (ko) | 2005-06-09 | 2006-05-30 | 반도체 장치 및 그 제조방법 |
CNB2006100912385A CN100499054C (zh) | 2005-06-09 | 2006-06-07 | 半导体装置及其制造方法 |
US11/423,027 US7566977B2 (en) | 2005-06-09 | 2006-06-08 | Semiconductor device and method for manufacturing the same |
US12/487,330 US7811856B2 (en) | 2005-06-09 | 2009-06-18 | Semiconductor device and method for manufacturing the same |
US12/872,158 US8102055B2 (en) | 2005-06-09 | 2010-08-31 | Semiconductor device |
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JP2005169340A JP4491380B2 (ja) | 2005-06-09 | 2005-06-09 | 半導体装置の製造方法 |
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JP4491380B2 true JP4491380B2 (ja) | 2010-06-30 |
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JP5708692B2 (ja) * | 2013-03-28 | 2015-04-30 | Tdk株式会社 | 電子デバイス用の接合構造及び電子デバイス |
CN108149292A (zh) * | 2016-12-02 | 2018-06-12 | 臻鼎科技股份有限公司 | 铜箔基板及其制作方法 |
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JPH05335309A (ja) * | 1992-05-27 | 1993-12-17 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2002368038A (ja) | 2001-06-07 | 2002-12-20 | Fuji Electric Co Ltd | フリップチップ実装方法 |
US7057294B2 (en) * | 2001-07-13 | 2006-06-06 | Rohm Co., Ltd. | Semiconductor device |
JP3915546B2 (ja) | 2002-02-26 | 2007-05-16 | セイコーエプソン株式会社 | Cof用テープ、その製造方法、半導体装置及びその製造方法 |
JP2005203558A (ja) * | 2004-01-15 | 2005-07-28 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2005203598A (ja) | 2004-01-16 | 2005-07-28 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP4146826B2 (ja) * | 2004-09-14 | 2008-09-10 | カシオマイクロニクス株式会社 | 配線基板及び半導体装置 |
US7420282B2 (en) * | 2004-10-18 | 2008-09-02 | Sharp Kabushiki Kaisha | Connection structure for connecting semiconductor element and wiring board, and semiconductor device |
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- 2006-05-30 KR KR1020060048602A patent/KR100749592B1/ko not_active IP Right Cessation
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US8102055B2 (en) | 2012-01-24 |
CN100499054C (zh) | 2009-06-10 |
US7566977B2 (en) | 2009-07-28 |
US20060281293A1 (en) | 2006-12-14 |
KR100749592B1 (ko) | 2007-08-14 |
US20100320615A1 (en) | 2010-12-23 |
US20090258461A1 (en) | 2009-10-15 |
KR20060128655A (ko) | 2006-12-14 |
JP2006344780A (ja) | 2006-12-21 |
US7811856B2 (en) | 2010-10-12 |
CN1877803A (zh) | 2006-12-13 |
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