JP4491332B2 - 最適化した偏光照明 - Google Patents

最適化した偏光照明 Download PDF

Info

Publication number
JP4491332B2
JP4491332B2 JP2004327534A JP2004327534A JP4491332B2 JP 4491332 B2 JP4491332 B2 JP 4491332B2 JP 2004327534 A JP2004327534 A JP 2004327534A JP 2004327534 A JP2004327534 A JP 2004327534A JP 4491332 B2 JP4491332 B2 JP 4491332B2
Authority
JP
Japan
Prior art keywords
polarization
illuminator
illumination
ils
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004327534A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005183938A5 (enExample
JP2005183938A (ja
Inventor
ソチャ ロバート
フラジェロ ドニス
ジー．ハンセン スティーヴン
Original Assignee
エーエスエムエル マスクツールズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエスエムエル マスクツールズ ビー．ブイ． filed Critical エーエスエムエル マスクツールズ ビー．ブイ．
Publication of JP2005183938A publication Critical patent/JP2005183938A/ja
Publication of JP2005183938A5 publication Critical patent/JP2005183938A5/ja
Application granted granted Critical
Publication of JP4491332B2 publication Critical patent/JP4491332B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
JP2004327534A 2003-12-19 2004-11-11 最適化した偏光照明 Expired - Fee Related JP4491332B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53066203P 2003-12-19 2003-12-19

Publications (3)

Publication Number Publication Date
JP2005183938A JP2005183938A (ja) 2005-07-07
JP2005183938A5 JP2005183938A5 (enExample) 2007-08-02
JP4491332B2 true JP4491332B2 (ja) 2010-06-30

Family

ID=34520284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004327534A Expired - Fee Related JP4491332B2 (ja) 2003-12-19 2004-11-11 最適化した偏光照明

Country Status (7)

Country Link
US (3) US7292315B2 (enExample)
EP (1) EP1544679B1 (enExample)
JP (1) JP4491332B2 (enExample)
KR (1) KR100919856B1 (enExample)
CN (1) CN100524028C (enExample)
SG (1) SG135042A1 (enExample)
TW (1) TWI373278B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4528580B2 (ja) * 2004-08-24 2010-08-18 株式会社東芝 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080018203A (ko) * 2005-06-24 2008-02-27 코닌클리케 필립스 일렉트로닉스 엔.브이. 조명 시스템의 편광의 특성을 기술하기 위한 방법 및디바이스
US7804646B2 (en) * 2006-01-31 2010-09-28 Asml Masktools B.V. Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings
US7548315B2 (en) * 2006-07-27 2009-06-16 Asml Netherlands B.V. System and method to compensate for critical dimension non-uniformity in a lithography system
US7705998B2 (en) * 2007-09-12 2010-04-27 Infineon Technologies Ag Method for evaluating an optical imaging process
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP2009251521A (ja) * 2008-04-10 2009-10-29 Jedat Inc ガラスデータ設計システム、方法およびプログラム
JP5607327B2 (ja) * 2009-08-27 2014-10-15 キヤノン株式会社 決定方法、露光方法、デバイスの製造方法及びプログラム
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
NL2007306A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
NL2007303A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
JP2012099596A (ja) * 2010-11-01 2012-05-24 Panasonic Corp 照明形状の最適化方法、マスク形状の最適化方法及びパターン形成方法
JP2012169483A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 露光条件決定プログラム
CN106028585B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于牛顿极值搜索算法的双闭环照明节能控制方法
CN106028584B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于梯度极值搜索算法的双闭环照明节能控制方法
CN106341938B (zh) * 2016-11-07 2018-08-07 电子科技大学 基于变幅值牛顿极值搜索算法的照明节能控制方法
EP3336608A1 (en) * 2016-12-16 2018-06-20 ASML Netherlands B.V. Method and apparatus for image analysis
DE102017115262B9 (de) * 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985579A (en) 1989-10-16 1991-01-15 Dow Corning Corporation Removal of hydrogen-containing silanes from organosilane mixtures
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
JP3339593B2 (ja) 1993-04-22 2002-10-28 株式会社ニコン 投影露光装置、及び該装置を用いた素子製造方法
US5559583A (en) 1994-02-24 1996-09-24 Nec Corporation Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
EP0824722B1 (en) * 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6140660A (en) 1999-03-23 2000-10-31 Massachusetts Institute Of Technology Optical synthetic aperture array
US6491396B2 (en) * 2000-02-15 2002-12-10 Seiko Epson Corporation Projector modulating a plurality of partial luminous fluxes according to imaging information by means of an electro-optical device
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7396558B2 (en) 2001-01-31 2008-07-08 Toray Industries, Inc. Integrated mask and method and apparatus for manufacturing organic EL device using the same
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
KR20040051613A (ko) * 2001-10-19 2004-06-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조명 편광 변환 시스템
US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US7411677B2 (en) * 2003-09-17 2008-08-12 Photonic Lattice Inc. Driverless ellipsometer and ellipsometry
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TW200523524A (en) 2003-11-05 2005-07-16 Asml Masktools Bv Eigen decomposition based OPC model
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination

Also Published As

Publication number Publication date
CN1629731A (zh) 2005-06-22
JP2005183938A (ja) 2005-07-07
EP1544679B1 (en) 2014-01-08
TWI373278B (en) 2012-09-21
TW200527953A (en) 2005-08-16
US8395757B2 (en) 2013-03-12
EP1544679A2 (en) 2005-06-22
US20110051114A1 (en) 2011-03-03
KR100919856B1 (ko) 2009-09-30
US20080043215A1 (en) 2008-02-21
KR20050062364A (ko) 2005-06-23
US7710544B2 (en) 2010-05-04
SG135042A1 (en) 2007-09-28
US20050134822A1 (en) 2005-06-23
CN100524028C (zh) 2009-08-05
EP1544679A3 (en) 2007-07-25
US7292315B2 (en) 2007-11-06

Similar Documents

Publication Publication Date Title
JP4491332B2 (ja) 最適化した偏光照明
KR102803747B1 (ko) 시뮬레이션 시스템을 위한 웨이퍼 층의 에칭 프로파일을 결정하는 방법
JP5121117B2 (ja) 強度プロフィールを最適化する方法及びプログラム
KR100961686B1 (ko) 모델-기반 스캐너 튜닝을 수행하는 방법
US7485396B2 (en) Scattering bar OPC application method for sub-half wavelength lithography patterning
JP4731830B2 (ja) ソースおよびマスクの最適化
US7342646B2 (en) Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition model
US7349066B2 (en) Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
CN100487573C (zh) 确定光刻投影参数的方法、器件制造方法及器件
KR20060087446A (ko) 임계 치수 계산에 사용되는 레지스트 모델들의캘리브레이션을 개선하기 위한 방법, 프로그램물 및 장치
JP2004221594A (ja) コンタクト・ホール・マスクの光学的近接補正設計の方法
US9110382B2 (en) Source polarization optimization
KR20050078234A (ko) 캘리브레이션된 고유 분해 모델을 이용하여 노광 툴들의믹스/매치로 인한 모델 ｏｐｃ 편차를 예측하고최소화하는 방법
JP2005183981A (ja) インターフェレンス・マッピング・リソグラフィを使用した画像構造の最適化
TW201841073A (zh) 藉由於圖案化裝置上之有限厚度結構來判定輻射散射的方法

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20060904

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070329

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20070517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070522

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100309

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100405

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130409

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S802 Written request for registration of partial abandonment of right

Free format text: JAPANESE INTERMEDIATE CODE: R311802

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130409

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140409

Year of fee payment: 4

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees