KR100919856B1 - 최적화된 편광 조명 - Google Patents

최적화된 편광 조명

Info

Publication number
KR100919856B1
KR100919856B1 KR1020040091966A KR20040091966A KR100919856B1 KR 100919856 B1 KR100919856 B1 KR 100919856B1 KR 1020040091966 A KR1020040091966 A KR 1020040091966A KR 20040091966 A KR20040091966 A KR 20040091966A KR 100919856 B1 KR100919856 B1 KR 100919856B1
Authority
KR
South Korea
Prior art keywords
illuminator
polarization
points
illumination
ils
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040091966A
Other languages
English (en)
Korean (ko)
Other versions
KR20050062364A (ko
Inventor
소챠로버트
플라겔로도니스
한센스티븐지.
Original Assignee
에이에스엠엘 마스크툴즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 마스크툴즈 비.브이. filed Critical 에이에스엠엘 마스크툴즈 비.브이.
Publication of KR20050062364A publication Critical patent/KR20050062364A/ko
Application granted granted Critical
Publication of KR100919856B1 publication Critical patent/KR100919856B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
KR1020040091966A 2003-12-19 2004-11-11 최적화된 편광 조명 Expired - Fee Related KR100919856B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53066203P 2003-12-19 2003-12-19
US60/530,662 2003-12-19

Publications (2)

Publication Number Publication Date
KR20050062364A KR20050062364A (ko) 2005-06-23
KR100919856B1 true KR100919856B1 (ko) 2009-09-30

Family

ID=34520284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040091966A Expired - Fee Related KR100919856B1 (ko) 2003-12-19 2004-11-11 최적화된 편광 조명

Country Status (7)

Country Link
US (3) US7292315B2 (enExample)
EP (1) EP1544679B1 (enExample)
JP (1) JP4491332B2 (enExample)
KR (1) KR100919856B1 (enExample)
CN (1) CN100524028C (enExample)
SG (1) SG135042A1 (enExample)
TW (1) TWI373278B (enExample)

Cited By (1)

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CN110088687A (zh) * 2016-12-16 2019-08-02 Asml荷兰有限公司 用于图像分析的方法和设备

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US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
KR101099847B1 (ko) 2004-01-16 2011-12-27 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
US8270077B2 (en) * 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
CN103605262B (zh) * 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP4528580B2 (ja) * 2004-08-24 2010-08-18 株式会社東芝 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
CN101203806A (zh) * 2005-06-24 2008-06-18 皇家飞利浦电子股份有限公司 用于表征照明系统的偏振的方法及装置
US7804646B2 (en) * 2006-01-31 2010-09-28 Asml Masktools B.V. Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings
US7548315B2 (en) * 2006-07-27 2009-06-16 Asml Netherlands B.V. System and method to compensate for critical dimension non-uniformity in a lithography system
US7705998B2 (en) * 2007-09-12 2010-04-27 Infineon Technologies Ag Method for evaluating an optical imaging process
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP2009251521A (ja) * 2008-04-10 2009-10-29 Jedat Inc ガラスデータ設計システム、方法およびプログラム
JP5607327B2 (ja) * 2009-08-27 2014-10-15 キヤノン株式会社 決定方法、露光方法、デバイスの製造方法及びプログラム
NL2005738A (en) * 2009-12-15 2011-06-16 Asml Holding Nv Improved polarization designs for lithographic apparatus.
NL2007303A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
NL2007306A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
JP2012099596A (ja) * 2010-11-01 2012-05-24 Panasonic Corp 照明形状の最適化方法、マスク形状の最適化方法及びパターン形成方法
JP2012169483A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 露光条件決定プログラム
CN106028584B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于梯度极值搜索算法的双闭环照明节能控制方法
CN106028585B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于牛顿极值搜索算法的双闭环照明节能控制方法
CN106341938B (zh) * 2016-11-07 2018-08-07 电子科技大学 基于变幅值牛顿极值搜索算法的照明节能控制方法
DE102017115262B9 (de) * 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie

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KR20040051613A (ko) * 2001-10-19 2004-06-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조명 편광 변환 시스템

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KR20040051613A (ko) * 2001-10-19 2004-06-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조명 편광 변환 시스템

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CN110088687A (zh) * 2016-12-16 2019-08-02 Asml荷兰有限公司 用于图像分析的方法和设备
CN110088687B (zh) * 2016-12-16 2021-11-30 Asml荷兰有限公司 用于图像分析的方法和设备

Also Published As

Publication number Publication date
US7292315B2 (en) 2007-11-06
US20080043215A1 (en) 2008-02-21
CN100524028C (zh) 2009-08-05
JP4491332B2 (ja) 2010-06-30
CN1629731A (zh) 2005-06-22
US20050134822A1 (en) 2005-06-23
EP1544679A2 (en) 2005-06-22
TWI373278B (en) 2012-09-21
EP1544679A3 (en) 2007-07-25
JP2005183938A (ja) 2005-07-07
EP1544679B1 (en) 2014-01-08
TW200527953A (en) 2005-08-16
US7710544B2 (en) 2010-05-04
KR20050062364A (ko) 2005-06-23
SG135042A1 (en) 2007-09-28
US20110051114A1 (en) 2011-03-03
US8395757B2 (en) 2013-03-12

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