SG135042A1 - Optimized polarization illumination - Google Patents

Optimized polarization illumination

Info

Publication number
SG135042A1
SG135042A1 SG200406521-5A SG2004065215A SG135042A1 SG 135042 A1 SG135042 A1 SG 135042A1 SG 2004065215 A SG2004065215 A SG 2004065215A SG 135042 A1 SG135042 A1 SG 135042A1
Authority
SG
Singapore
Prior art keywords
polarization illumination
optimized polarization
optimized
illumination
polarization
Prior art date
Application number
SG200406521-5A
Other languages
English (en)
Inventor
Robert Socha
Donis Flagello
Steven G Hansen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG135042A1 publication Critical patent/SG135042A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
SG200406521-5A 2003-12-19 2004-11-09 Optimized polarization illumination SG135042A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53066203P 2003-12-19 2003-12-19

Publications (1)

Publication Number Publication Date
SG135042A1 true SG135042A1 (en) 2007-09-28

Family

ID=34520284

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200406521-5A SG135042A1 (en) 2003-12-19 2004-11-09 Optimized polarization illumination

Country Status (7)

Country Link
US (3) US7292315B2 (enExample)
EP (1) EP1544679B1 (enExample)
JP (1) JP4491332B2 (enExample)
KR (1) KR100919856B1 (enExample)
CN (1) CN100524028C (enExample)
SG (1) SG135042A1 (enExample)
TW (1) TWI373278B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4528580B2 (ja) * 2004-08-24 2010-08-18 株式会社東芝 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080018203A (ko) * 2005-06-24 2008-02-27 코닌클리케 필립스 일렉트로닉스 엔.브이. 조명 시스템의 편광의 특성을 기술하기 위한 방법 및디바이스
US7804646B2 (en) * 2006-01-31 2010-09-28 Asml Masktools B.V. Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings
US7548315B2 (en) * 2006-07-27 2009-06-16 Asml Netherlands B.V. System and method to compensate for critical dimension non-uniformity in a lithography system
US7705998B2 (en) * 2007-09-12 2010-04-27 Infineon Technologies Ag Method for evaluating an optical imaging process
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP2009251521A (ja) * 2008-04-10 2009-10-29 Jedat Inc ガラスデータ設計システム、方法およびプログラム
JP5607327B2 (ja) * 2009-08-27 2014-10-15 キヤノン株式会社 決定方法、露光方法、デバイスの製造方法及びプログラム
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
NL2007306A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
NL2007303A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
JP2012099596A (ja) * 2010-11-01 2012-05-24 Panasonic Corp 照明形状の最適化方法、マスク形状の最適化方法及びパターン形成方法
JP2012169483A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 露光条件決定プログラム
CN106028585B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于牛顿极值搜索算法的双闭环照明节能控制方法
CN106028584B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于梯度极值搜索算法的双闭环照明节能控制方法
CN106341938B (zh) * 2016-11-07 2018-08-07 电子科技大学 基于变幅值牛顿极值搜索算法的照明节能控制方法
EP3336608A1 (en) * 2016-12-16 2018-06-20 ASML Netherlands B.V. Method and apparatus for image analysis
DE102017115262B9 (de) * 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985579A (en) 1989-10-16 1991-01-15 Dow Corning Corporation Removal of hydrogen-containing silanes from organosilane mixtures
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
JP3339593B2 (ja) 1993-04-22 2002-10-28 株式会社ニコン 投影露光装置、及び該装置を用いた素子製造方法
US5559583A (en) 1994-02-24 1996-09-24 Nec Corporation Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
EP0824722B1 (en) * 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6140660A (en) 1999-03-23 2000-10-31 Massachusetts Institute Of Technology Optical synthetic aperture array
US6491396B2 (en) * 2000-02-15 2002-12-10 Seiko Epson Corporation Projector modulating a plurality of partial luminous fluxes according to imaging information by means of an electro-optical device
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7396558B2 (en) 2001-01-31 2008-07-08 Toray Industries, Inc. Integrated mask and method and apparatus for manufacturing organic EL device using the same
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
KR20040051613A (ko) * 2001-10-19 2004-06-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조명 편광 변환 시스템
US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US7411677B2 (en) * 2003-09-17 2008-08-12 Photonic Lattice Inc. Driverless ellipsometer and ellipsometry
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TW200523524A (en) 2003-11-05 2005-07-16 Asml Masktools Bv Eigen decomposition based OPC model
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANALYSIS OF HORIZONTAL-VERTICAL PATTERNING ASYMMETRY IN A LINEARLY POLARIZED DEEP UV EXPOSURE SYSTEM *
LITHOGRAPHIC TOLERANCES BASED ON VECTOR DIFFRACTION THEORY *
OVERCOMING THE RESOLUTION CHALLENGE USING SPECIAL I *

Also Published As

Publication number Publication date
CN1629731A (zh) 2005-06-22
JP2005183938A (ja) 2005-07-07
EP1544679B1 (en) 2014-01-08
JP4491332B2 (ja) 2010-06-30
TWI373278B (en) 2012-09-21
TW200527953A (en) 2005-08-16
US8395757B2 (en) 2013-03-12
EP1544679A2 (en) 2005-06-22
US20110051114A1 (en) 2011-03-03
KR100919856B1 (ko) 2009-09-30
US20080043215A1 (en) 2008-02-21
KR20050062364A (ko) 2005-06-23
US7710544B2 (en) 2010-05-04
US20050134822A1 (en) 2005-06-23
CN100524028C (zh) 2009-08-05
EP1544679A3 (en) 2007-07-25
US7292315B2 (en) 2007-11-06

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