CN100524028C - 优化偏振照明 - Google Patents

优化偏振照明 Download PDF

Info

Publication number
CN100524028C
CN100524028C CNB2004100947120A CN200410094712A CN100524028C CN 100524028 C CN100524028 C CN 100524028C CN B2004100947120 A CNB2004100947120 A CN B2004100947120A CN 200410094712 A CN200410094712 A CN 200410094712A CN 100524028 C CN100524028 C CN 100524028C
Authority
CN
China
Prior art keywords
polarization
illumination
illuminator
point
partiald
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100947120A
Other languages
English (en)
Chinese (zh)
Other versions
CN1629731A (zh
Inventor
R·索查
D·弗拉格洛
S·G·汉森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML FRISKET TOOLS BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML FRISKET TOOLS BV filed Critical ASML FRISKET TOOLS BV
Publication of CN1629731A publication Critical patent/CN1629731A/zh
Application granted granted Critical
Publication of CN100524028C publication Critical patent/CN100524028C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
CNB2004100947120A 2003-12-19 2004-11-12 优化偏振照明 Expired - Fee Related CN100524028C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53066203P 2003-12-19 2003-12-19
US60/530662 2003-12-19

Publications (2)

Publication Number Publication Date
CN1629731A CN1629731A (zh) 2005-06-22
CN100524028C true CN100524028C (zh) 2009-08-05

Family

ID=34520284

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100947120A Expired - Fee Related CN100524028C (zh) 2003-12-19 2004-11-12 优化偏振照明

Country Status (7)

Country Link
US (3) US7292315B2 (enExample)
EP (1) EP1544679B1 (enExample)
JP (1) JP4491332B2 (enExample)
KR (1) KR100919856B1 (enExample)
CN (1) CN100524028C (enExample)
SG (1) SG135042A1 (enExample)
TW (1) TWI373278B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4528580B2 (ja) * 2004-08-24 2010-08-18 株式会社東芝 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080018203A (ko) * 2005-06-24 2008-02-27 코닌클리케 필립스 일렉트로닉스 엔.브이. 조명 시스템의 편광의 특성을 기술하기 위한 방법 및디바이스
US7804646B2 (en) * 2006-01-31 2010-09-28 Asml Masktools B.V. Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings
US7548315B2 (en) * 2006-07-27 2009-06-16 Asml Netherlands B.V. System and method to compensate for critical dimension non-uniformity in a lithography system
US7705998B2 (en) * 2007-09-12 2010-04-27 Infineon Technologies Ag Method for evaluating an optical imaging process
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP2009251521A (ja) * 2008-04-10 2009-10-29 Jedat Inc ガラスデータ設計システム、方法およびプログラム
JP5607327B2 (ja) * 2009-08-27 2014-10-15 キヤノン株式会社 決定方法、露光方法、デバイスの製造方法及びプログラム
US8982324B2 (en) * 2009-12-15 2015-03-17 Asml Holding N.V. Polarization designs for lithographic apparatus
NL2007306A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Source polarization optimization.
NL2007303A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
JP2012099596A (ja) * 2010-11-01 2012-05-24 Panasonic Corp 照明形状の最適化方法、マスク形状の最適化方法及びパターン形成方法
JP2012169483A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 露光条件決定プログラム
CN106028585B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于牛顿极值搜索算法的双闭环照明节能控制方法
CN106028584B (zh) * 2016-05-23 2018-03-09 电子科技大学 一种基于梯度极值搜索算法的双闭环照明节能控制方法
CN106341938B (zh) * 2016-11-07 2018-08-07 电子科技大学 基于变幅值牛顿极值搜索算法的照明节能控制方法
EP3336608A1 (en) * 2016-12-16 2018-06-20 ASML Netherlands B.V. Method and apparatus for image analysis
DE102017115262B9 (de) * 2017-07-07 2021-05-27 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985579A (en) 1989-10-16 1991-01-15 Dow Corning Corporation Removal of hydrogen-containing silanes from organosilane mixtures
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
JP3339593B2 (ja) 1993-04-22 2002-10-28 株式会社ニコン 投影露光装置、及び該装置を用いた素子製造方法
US5559583A (en) 1994-02-24 1996-09-24 Nec Corporation Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
EP0824722B1 (en) * 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6140660A (en) 1999-03-23 2000-10-31 Massachusetts Institute Of Technology Optical synthetic aperture array
US6491396B2 (en) * 2000-02-15 2002-12-10 Seiko Epson Corporation Projector modulating a plurality of partial luminous fluxes according to imaging information by means of an electro-optical device
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7396558B2 (en) 2001-01-31 2008-07-08 Toray Industries, Inc. Integrated mask and method and apparatus for manufacturing organic EL device using the same
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6519760B2 (en) 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
KR20040051613A (ko) * 2001-10-19 2004-06-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조명 편광 변환 시스템
US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US7411677B2 (en) * 2003-09-17 2008-08-12 Photonic Lattice Inc. Driverless ellipsometer and ellipsometry
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TW200523524A (en) 2003-11-05 2005-07-16 Asml Masktools Bv Eigen decomposition based OPC model
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination

Also Published As

Publication number Publication date
CN1629731A (zh) 2005-06-22
JP2005183938A (ja) 2005-07-07
EP1544679B1 (en) 2014-01-08
JP4491332B2 (ja) 2010-06-30
TWI373278B (en) 2012-09-21
TW200527953A (en) 2005-08-16
US8395757B2 (en) 2013-03-12
EP1544679A2 (en) 2005-06-22
US20110051114A1 (en) 2011-03-03
KR100919856B1 (ko) 2009-09-30
US20080043215A1 (en) 2008-02-21
KR20050062364A (ko) 2005-06-23
US7710544B2 (en) 2010-05-04
SG135042A1 (en) 2007-09-28
US20050134822A1 (en) 2005-06-23
EP1544679A3 (en) 2007-07-25
US7292315B2 (en) 2007-11-06

Similar Documents

Publication Publication Date Title
CN100524028C (zh) 优化偏振照明
US10234756B2 (en) Scanner based optical proximity correction system and method of use
KR100824031B1 (ko) 캘리브레이션된 고유 분해 모델을 이용하여 노광 툴들의믹스/매치로 인한 모델 ｏｐｃ 편차를 예측하고최소화하는 방법
KR100836125B1 (ko) 레지스트 프로세스 캘리브레이션/최적화 및 상이한 리소그래피 시스템들간의 ｏｐｅ 매칭을 제공하는 ｄｏｅ 최적화를 수행하는 방법 및 이를 포함하는 컴퓨터 프로그램물을 기록한 컴퓨터로 읽을 수 있는 기록매체
TWI791196B (zh) 判定基板之堆疊組態之方法及其相關非暫時性電腦可讀媒體
US20050018164A1 (en) Exposure with intensity balancing to mimic complex illuminator shape
KR20050043713A (ko) 고유 분해 기반 ｏｐｃ 모델
JP2004221594A (ja) コンタクト・ホール・マスクの光学的近接補正設計の方法
JP5538336B2 (ja) 照射源偏光最適化
KR20060087446A (ko) 임계 치수 계산에 사용되는 레지스트 모델들의캘리브레이션을 개선하기 위한 방법, 프로그램물 및 장치
WO2018099716A1 (en) Method and system for pattern configuration
KR20190008321A (ko) 관통-파장 유사성에 기초한 계측 견실성 향상 기술
JP5191464B2 (ja) リソグラフィパターンの分割方法、当該分割方法を含むリソグラフィ処理方法及びデバイス製造方法、並びに前記分割方法で製造されるマスク
TWI870671B (zh) 用於判定基板圖案之蝕刻效應之方法及系統及相關之非暫時性電腦可讀媒體
US8043797B2 (en) Lithographic apparatus and device manufacturing method
TW202340847A (zh) 用於判定基於蝕刻偏差方向之蝕刻功效之系統及方法
TWI667553B (zh) 判定圖案之特性之方法
TWI813192B (zh) 依據微影設備或製程特徵所特徵化之表示選擇圖案
KR20190108609A (ko) 공정 모델들을 조정하는 방법들
CN118043740A (zh) 使用带电粒子检查系统的图案化参数确定
TWI836599B (zh) 判定來自統計獨立源之度量衡貢獻值之方法、判定微影程序之感興趣參數之方法及其相關聯電腦程式與非暫時性電腦程式載體
TWI870726B (zh) 用於計算微影之模擬模型穩定性判定及相關電腦可讀媒體
WO2024017807A1 (en) Systems and methods for optimizing metrology marks
KR20250009446A (ko) 리소그래피 공정의 최적화를 위한 회절 기반 퓨필 결정

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: ASML HOLLAND CO., LTD.

Free format text: FORMER OWNER: ASML FRISKET TOOLS B.V.

Effective date: 20140211

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20140211

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: Holland Weierde Eindhoven

Patentee before: ASML Frisket Tools B.V.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090805

Termination date: 20181112